• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.112-112
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• 2010

Zinc Oxide (ZnO) thin-films were deposited according to the magnetron sputtering method. The deposited ZnO films were annealed with RTA equipment at various annealing temperatures in an vacuum ambient. The influence of the annealing temperature on the structural, electrical, and optical properties of the ZnO films was experimentally investigated, and the effect of conductivity of the ZnO active layer on the device performance of the oxide-TFT was tested. As a result, an increase of the annealing temperature was attributed to improvements of crystallinity in ZnO films. The grain size was found to lead to an increase of conductivity in the ZnO films. Fabricated ZnO TFTs with annealed ZnO active layer provided good performance in the TFT devices. Consequently, the performance of the TFT was determined by the conductivity of the ZnO film, which was related to the structural properties of the ZnO film.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.2
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• pp.50-54
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• 2000

We studied the synthesis of S $i_{1-x}$ Cx (x=0.016) epitaxial layer using ion implantation and solid phase epitaxy (SPE). The activation energy Ea was obtained for the loss of substitutional carbon using fourier transform-infrared spectroscopy (FTIR) and high-resolution x-ray diffraction (HR-XRD). In FTIR analysis, the integrated peak intensity was used to quantify the loss of carbon atoms from substitutional to interstitial sites during annealing. The substitutional carbon contents in S $i_{0.984}$ $C_{0.016}$ were also measured using HR-XRD. By dynamic simulations of x-ray rocking curves, the fraction of substitutional carbon was obtained. The effects of annealing temperature and time were also studied by comparing vacuum furnace annealing with rapid thermal annealing (RTA))))))

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.376-380
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• 2005

The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss (S$_{11}$) and quality factor (Q$_{s/p}$). These thermal techniques seem very promising for enhancing FBAR resonance performance.

• Transactions of Materials Processing
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• v.13 no.5
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• pp.455-460
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• 2004

The deformation and annealing behaviors of a 1050 Al alloy deformed at cryogenic temperature were investigated, focusing on the evolution of microstructures and mechanical properties. Especially, the effects of annealing temperature, $150~300^{\circ}C$, on microstructures and mechanical properties of the sheets received reduction of 88% at cryogenic temperature were investigated. The significant change in mechanical properties with the annealing temperatures of $200~300^{\circ}C$ would be attributed to the variations in the volume fraction of recrystallized grains and coarse equiaxed grains.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.164-164
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• 2010

Cds films were deposited on glass substrates using rf magnetron sputtering method followed by rapid thermal annealing(RTA). Effects of annealing temperature on surface characteristic, structural, electrical and optical property of CdS films were investigated at different temperatures ranging from 250 to $550^{\circ}C$ with various holding time. The film annealed at $450^{\circ}C$ with less than 1 min holding time is attributed to the improved crystalline quality of CdS film due to the effective relaxation of residual compressive stress and achieving maximum grain size. The results show that RTA treatments under optimal annealing condition can provide significant improvements in the properties of CdS films.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.78-84
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• 1998

Niobium ions of 380 keV energy have been implanted at 300k in sapphire with a dose of $5\times10^{16}\textrm{ions/cm}^2$ and subsequently thermal annealed up to $1100^{\circ}C$ at reducing atmosphere. The behavior of the radiation damage produced by ion implantation followed by annealing is investigated using optical absorption technique and X-ray photoelectron spectroscopy(XPS). It is found that different defects annealed are dependent on the annealing temperature owing to different mechanisms which are proposed on the basis of the optical absorption measurement, and the implanted niobium in sapphire is in different local environments with different charge states after annealing, which are analyzed by XPS measurements.

• Journal of Magnetics
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• v.18 no.4
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• pp.412-416
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• 2013

FePt:Ag (100 nm) nanocomposite thin films were prepared on naturally-oxidized Si substrates by dc magnetron sputtering at room temperature. X-ray diffraction (XRD) and transmission electron microscopy (TEM) are used to investigate the effects of annealing pressures on the ordering processes and microstructures of these films. The average sizes for the $L1_0$ ordered domains and the FePt grains are reduced to d = 9 nm and D = 13 nm from d = 19 nm and D = 34 nm, respectively, when the annealing pressure is enhanced to 0.6 GPa from room pressure at 873 K. Furthermore, the size distribution is improved into a narrow range. With increasing pressure, the coercivity of $L1_0$-FePt:Ag thin films decreases from 15.1 to 7.6 kOe. In the present study, the effects of high pressure on the $L1_0$ ordering processes and microstructures of FePt:Ag nanocomposite films were discussed.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.2
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• pp.118-128
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• 1994

Five alloys were selected randomly in the composition range showing the best shape memory effect in Fe-Mn-Si system reported by Murakami. The shape memory effects of those alloys were mainly investigated through the training treatment which consisted of the repetition of 2% tensile deformation at room temperature and subsequent annealing at $600^{\circ}C$ above $A_r$ temperature. At the same deformation degress in rolling $600^{\circ}C$-annealing for 1 hr. showed the best shape memory effect, and 10%-deformation degrees represented maxima of the shpae memory effects at all annealing temperatures, $500^{\circ}C$, $600^{\circ}C$ and $700^{\circ}C$. The shape memory effects of the alloys were increased by increasing training cycle up to 5 cycles. This was because a large number of dislocations introduced by training process gave rise to increase in the austenite yield stress, and acted as nucleation sites for stress induced ${\varepsilon}$ martensite. The thermal cycling treatment, repetition of cooling in nitrogen at $-196{\circ}C$ and heating to $300^{\circ}C$ for 5 min., did not improve the shape memory effect.

• Nuclear Engineering and Technology
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• v.55 no.2
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• pp.408-420
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• 2023

Beryllium oxide (BeO) is being re-emphasized and utilized in Micro Modular Reactors (MMR) because of its prominent nuclear and high temperature properties in recent years. The implications of the research about effects of neutron irradiation on the microstructure and properties of BeO are significant. This article comprehensively reviews the effects of neutron irradiation on BeO and proposes the maximum permissible neutron doses at different temperatures for BeO without cracks in appearance according to the data in the previous literature. This maximum permissible neutron dose value has important reference significance for the experimental study of BeO. The effects of neutron irradiation on the thermal conductivity and flexural strength of BeO are also discussed. In addition, microstructure evolution of irradiated BeO during post-irradiation annealing is summarized. This review article has important implications for the application of BeO in MMR.