• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.719-726
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• 2015

For a decade, solution-processed functional materials and various printing technologies have attracted increasingly the significant interest in realizing low-cost flexible electronics. In this study, Cu nanoparticles are synthesized via the chemical reduction of Cu ions under inert atmosphere. To prevent interparticle agglomeration and surface oxidation, oleic acid is incorporated as a surface capping molecule and hydrazine is used as a reducing agent. To endow water-compatibility, the surface of synthesized Cu nanoparticles is modified by a mixture of carboxyl-terminated anionic polyelectrolyte and polyoxylethylene oleylamine ether. For reducing the surface tension and the evaporation rate of aqueous Cu nanoparticle inks, the solvent composition of Cu nanoparticle ink is designed as DI water:2-methoxy ethanol:glycerol:ethylene glycol = 50:20:5:25 wt%. The effects of poly(styrene-co-maleic acid) as an adhesion promoter(AP) on rheology of aqueous Cu nanoparticle inks and adhesion of Cu pattern printed on polyimid films are investigated. The 40 wt% aqueous Cu nanoparticle inks with 0.5 wt% of Poly(styrene-co-maleic acid) show the "Newtonian flow" and has a low viscosity under $10mPa{\cdots}S$, which is applicable to inkjet printing. The Cu patterns with a linewidth of $50{\sim}60{\mu}m$ are successfully fabricated. With the addition of Poly(styrene-co-maleic acid), the adhesion of printed Cu patterns on polyimid films is superior to those of patterns prepared from Poly(styrene-co-maleic acid)-free inks. The resistivities of Cu films are measured to be $10{\sim}15{\mu}{\Omega}{\cdot}cm$ at annealing temperature of $300^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.111-112
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• 2005

To obtain the single crystal thin films, $CuInSe_2$, mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wail epitaxy (HWE) system. The source and substrate temperatures were 620$^{\circ}C$ and 410$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobilily of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}$ $cm^{-3}$ and $296cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the CulnSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation E$_g$(T) = 1.1851 eV - ($8.99\times10^{-4}$ ev/K)T$_2$/(T + 153K). After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The nat ive defects of V$_{Cu}$, $V_{Se}$, Cu$_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

• Corrosion Science and Technology
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• v.11 no.1
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• pp.1-8
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• 2012

The development of martensitic grades which can be processed in continuous galvanizing lines requires the reduction of the oxides formed on the steel during the hot dip process. This reduction mechanism was investigated in detail by means of High Resolution Transmission Electron Microscopy (HR-TEM) of cross-sectional samples. Annealing of a martensitic steel in a 10% $H_2+N_2$ atmosphere with the dew point of $-35^{\circ}C$ resulted in the formation of a thin $_{C-X}MnO.SiO_{2}$ (x>1) oxide film and amorphous $_{a-X}MnO.SiO_{2}$ oxide particles on the surface. During the hot dip galvanizing in Zn-0.13%Al, the thin $_{C-X}MnO.SiO_{2}$ (x>1) oxide film was reduced by the Al. The $_{a-X}MnO.SiO_{2}$ (x<0.9) and $a-SiO_{2}$ oxides however remained embedded in the Zn coating close to the steel/coating interface. No $Fe_{2}Al_{5-X}Zn_{X}$ inhibition layer formation was observed. During hot dip galvanizing in Zn-0.20%Al, the $_{C-X}MnO.SiO_{2}$ (x>1) oxide film was also reduced and the amorphous $_{a-X}MnO.SiO_{2}$ and $a-SiO_{2}$ particles were embedded in the $Fe_{2}Al_{5-X}Zn_{X}$ inhibition layer formed at the steel/coating interface during hot dipping. The results clearly show that Al in the liquid Zn bath can reduce the crystalline $_{C-X}MnO.SiO_{2}$ (x>1) oxides but not the amorphous $_{a-X}MnO.SiO_{2}$ (x<0.9) and $a-SiO_{2}$ oxides. These oxides remain embedded in the Zn layer or in the inhibition layer, making it possible to apply a Zn or Zn-alloy coating on martensitic steel by hot dipping. The hot dipping process was also found to deteriorate the mechanical properties, independently of the Zn bath composition.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.408-412
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• 1998

Thermoelectric properties of Bi$_{2}$(Te$_{1-x}$Se$_{ x}$)$_{3}$(0.05$\leq$x$\leq$0.25) prepared by mechanical alloying and hot pressing, were investigated. Contrary to the p-type behavior of single crystals, the hot-pressed Bi$_{2}$(Te$_{1-x}$Se$_{ x}$)$_{3}$ exhibited ntype conduction without addition of donor dopant. When $Bi_2(Te_{0.85}Se_{0.15})_3$powders were annealed in (50% $H_2$ + 50% Ar) atmosphere, the hot-pressed specimen exhibited a positive Seebeck coefficient due to the reduction of the electron concentration by removal of the oxide layer on the powder surface and annealing-out of the excess Te vacancies. Among the Bi$_{2}$(Te$_{1-x}$Se$_{ x}$)$_{3}$fabricated by mechanical alloying and hot pressing, $Bi_2(Te_{0.85}Se_{0.15})_3$ exhibited a maximum figure-of-merit of 1.92 $\times$ $lO^{-3}$/K.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.124-127
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• 2005

It is demonstrated that the annealing process for Ti in-diffusion to z-cut $LiNbO_3$ at temperature lower than the curie temperature in a platinum (Pt) box can cause a ferroelectric micro-domain inversion at the +z surface and Li out-diffusion, therefore which should be avoided or suppressed for waveguide type periodically poled lithium niobate (PPLN) devices. The depth of the inversion layer depends on the Ti-diffusion conditions such as temperature, atmosphere, the sealing method of $LiNbO_3$ in the Pt box and crystal orientation is experimentally examined. The result shows that the polarization-inverted domain boundary appears at the only +z surface and its thickness is about $1.6{\mu}m$. Also, for the etched $LiNbO_3$, surface the domain shape was observed by the optical microscope and atomic force microscopy (AEM), and distribution of the cation concentrations in the $LiNbO_3$ crystal by the secondary ion mass spectrometry (SIMS).

• Journal of the Korean Solar Energy Society
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• v.23 no.2
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• pp.59-70
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.131-131
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• 2013

A single-layer graphene has been uniformly grown on a Cu surface at elevated temperatures by thermally processing a poly(methyl methacrylate) (PMMA) film in a rapid thermal annealing (RTA) system under vacuum. The detailed chemistry of the transition from solid-state carbon to graphene on the catalytic Cu surface was investigated by performing in-situ residual gas analysis while PMMA/Cu-foil samples being heated, in conjunction with interrupted growth studies to reconstruct ex-situ the heating process. The data clearly show that the formation of graphene occurs with hydrocarbon molecules vaporized from PMMA, such as methane and/or methyl radicals, as precursors rather than by the direct graphitization of solid-state carbon. We also found that the temperature for vaporizing hydrocarbon molecules from PMMA and the length of time the gaseous hydrocarbon atmosphere is maintained, which are dependent on both the heating temperature profile and the amount of a solid carbon feedstock are the dominant factors to determine the crystalline quality of the resulting graphene film. Under optimal growth conditions, the PMMA-derived graphene was found to have a carrier (hole) mobility as high as ~2,700 cm2V-1s-1 at room temperature, superior to common graphene converted from solid carbon.

• New Physics: Sae Mulli
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• v.68 no.12
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• pp.1315-1323
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• 2018

We studied the carbonization due to the annealing condition of waste coffee powder for application as an active anode material for lithium-ion batteries (LIBs). The coffee powder used as an active anode material for LIBs was obtained from coffee beans, not from a coffee shells. The waste coffee powder was dried in air and heat-treated in an $Ar/H_2$ atmosphere to obtain a pore-forming activated carbon powder. The specific capacity of the sample annealed at $700^{\circ}C$ was still 303 mAh/g after 1000 cycles at a current density of 1000 mA/g and with a coulombic efficiency of over 99.5%. The number of pores and the pore size of the waste coffee powder were increased due to chemical treatment with KOH, which had the some effect as an increased specific surface area. The waste coffee powder is considered to be a very promising active anode material because of both its excellent electrochemical properties due to enhanced carrier conduction and its being a cost effective resource for use in LIBs.