• Progress in Superconductivity and Cryogenics
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• v.18 no.2
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• pp.14-17
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• 2016

Annealing as-grown electron-doped cuprates under a low oxygen-partial-pressure condition is a necessary step to achieve superconductivity. It has been recently found that the so-called protect annealing results in much better superconducting properties in terms of the superconducting transition temperature and volume fraction. In this article, we report on angle-resolved photoemission spectroscopy studies of a protect-annealed electron-doped cuprate $Pr_{0.9}La_{1.0}Ce_{0.1}CuO_4$ on annealing condition dependent superconducting and pseudo-gap properties. Remarkably, we found that the one showing a better superconducting property possesses almost no pseudo-gap while others have strong pseudo-gap feature due to an anti-ferromagnetic order.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.90-94
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• 2018

The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene, that is observed in pristine graphene indicating intrinsic electron-doping by the substrate, completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases by the presence of manganese atoms, approaching the electron band structure calculated using the local density approximation method. The former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition. The latter suggests that its electronic correlations are efficiently screened, suggesting that the dielectric property of the substrate is modified by manganese atoms and indicating that electronic correlations in grpahene can also be tuned by foreign atoms. These results pave the way for promising device application using graphene that is semiconducting and charge neutral.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.166-166
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• 2000

We studied electronic structure of magnetic semiconductors EuO, EuS, and EuTe. The photoemission spectra show localized Eu 4f states and broad anion p bands. As the size of anion increases from oxygen to tellurium, anion p band width increases and eventually overlaps Eu 4f states. Hence in EuO and EuS, Eu 4f states are the highest occupied stated lying above anion p band, while Te 5p band spreads widely over Eu 4f states to become valence band maximum in EuTe. It was also observed that Eu 4f states have width of 0.7eV and dispersion of 0.2eV in EuS by angle resolved photoemission spectroscopy. The width of the 4f spectra mainly originates from atomic multiplets, but the much larger dispersion than that of Eu metal is due to p-f mixing.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.8-8
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• 2000

Recently the study of the pseudo-gap in high temperature superconductivity become critical issue because it contains key information of the pair formation of the high temperature superconductivity. Specially angle resolved photoemission study shows the various information of the gap formation. In this talk, I will review the recent theories as will as experiments on the pseudo-gap in high temperature superconductors. Specially I will introduce the possible observation of the Andreeve reflection in the underdopped high temperature superconductors.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.163.1-163.1
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• 2014

Electron-electron interactions bear important information on fundamental electronic properties such as electron effective mass, conductivity, and charge mobility. By using angle-resolved photoemission spectroscopy, here we address unusual electron self-energy in graphene induced by the electron-electron interactions, which are distinguished from those of an ordinary Fermi liquid. Our findings provide a new route for two-dimensional electron systems toward device applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.277-277
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• 2013

The epitaxial graphene on the 4H- or 6H-SiC(0001) surface has been intensively studied due to the possibility of wafer-scale growt. However the existence of interface layer (zero layer graphene) and its influence on the upper graphene layer have been considered as one of the main obstarcles for the industrial application. Among various methods tried to overcome the strong interaction with the substrate through the interface layer, it has been proved that the hydrogen intercalation successfully passivate the Si dangling bond of the substrate and can produce the quasi-free standing epitaxial graphene (QFEG) layers on the siC(0001) surface. In this study, we report the results of the angle-resolved photoemission spectroscopy (ARPES) and Raman spectroscopy for the QFEG layers produced by ex-situ and in-situ hydrogen intercalation.From the ARPES measurement, we confirmed that the Dirac points of QFEG layers exactly coincide with the Fermi level. The band structure of QFEG layer are sustainable upon thermal heating up to 1100 K and robust against the deposition of several metals andmolecular deposition. We also investigated the strain of the QFEG layers by using Raman spectroscopy measurement. From the change of the 2D peak position of graphene Raman spectrum, we found out that unlike the strong compressive strain in the normal epitaxial graphene on the SiC(0001) surface, the strain of the QFEG layer are significantly released and almost similar to that of the mechanically exfoliated graphene on the silicon oxide substrate. These results indicated that various ideas proposed for the ideal free-standing graphene can be tested based on the QFEG graphene layers grown on the SiC(0001) surface.

• Progress in Superconductivity
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• v.11 no.2
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• pp.83-86
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• 2010

There are theoretical and experimental evidences for the pseudo-gap in electron doped cuprates being due to interaction between electrons and anti-ferromagnetism(AFM). A remaining issue is on how AFM correlates with pseudo-gap, and eventually with superconductivity. To elucidate the issue, we have performed temperature dependent angle-resolved photoemission studies of an e-doped cuprate superconductor $Sm_{2-x}Ce_xCuO_4$(SCCO) x=0.18 at 20K and 150K. In the case of $Nd_{2-x}Ce_xCuO_4$, the most well known e-doped cuprate, pseudo-gap disappears at around 100 K for x=0.17. Our experimental result reveals that the pseudo-gap of SCCO exists even at 150K for x=0.18. This result implies that the AFM of SCCO survives even in x=0.18, which agrees with previously reported phase diagram of SCCO. Yet, the superconductivity disappears around x=0.18 for both NCCO and SCCO in spite of the difference in the magnetic order. This result sheds a light on the disappearance of superconductivity on the over-doped side.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.114.1-114.1
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• 2014

Copper is considered to be the most promising substrate for the growth of high-quality and large area graphene by chemical vapor deposition (CVD), in particular, on the (111) facet. Because the interactions between graphene and Cu substrates influence the orientation, quality, and properties of the synthesized graphene, we studied the interactions using angle-resolved photoemission spectroscopy. The evolution of both the Shockley surface state of the Cu(111) and the p band of the graphene was measured from the initial stage of CVD growth to the formation of a monolayer. Graphene growth was initiated along the Cu(111) lattice, where the Dirac band crossed the Fermi energy ($E_F$) at the K point without hybridization with the d-band of Cu. Then two rotated domains were additionally grown as the area covered with graphene became wider. The Dirac energy was about 0.4 eV and the energy of the Shockley surface state of Cu(111) shifted toward the $E_F$) by 0.15 eV upon graphene formation. These results indicate weak interactions between graphene and Cu, and that the electron transfer is limited to that between the Shockley surface state of Cu(111) and the p band of graphene. This weak interaction and slight lattice mismatch between graphene and Cu resulted in the growth of rotated graphene domains ($9.6^{\circ}$ and $8.4^{\circ}$), which showed no significant differences in the Dirac band with respect to different orientations. These rotated graphene domains resulted in grain boundaries which would hinder a large-sized single monolayer growth on Cu substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.146.2-146.2
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• 2013

Copper is considered to be the most promising substrate for the growth of high-quality and large area graphene by chemical vapor deposition (CVD), in particular, on the (111) facet. Because the interactions between graphene and Cu substrates influence the orientation, quality, and properties of the synthesized graphene, we studied the interactions using angle-resolved photoemission spectroscopy. The evolution of both the Shockley surface state of the Cu(111) and the ${\pi}$ band of the graphene was measured from the initial stage of CVD growth to the formation of a monolayer. Graphene growth was initiated along the Cu(111) lattice, where the Dirac band crossed the Fermi energy (EF) at the K point without hybridization with the d-band of Cu. Then two rotated domains were additionally grown as the area covered with graphene became wider. The Dirac energy was about -0.4 eV and the energy of the Shockley surface state of Cu(111) shifted toward the EF by ~0.15 eV upon graphene formation. These results indicate weak interactions between graphene and Cu, and the electron transfer is limited to that between the Shockley surface state of Cu(111) and the ${\pi}$ band of graphene. This weak interaction and slight lattice mismatch between graphene and Cu resulted in the growth of rotated graphene domains ($9.6^{\circ}$ and $8.4^{\circ}$), which showed no significant differences in the Dirac band with respect to different orientations. These rotated graphene domains resulted in grain boundaries which would hinder a large-sized single monolayer growth on Cu substrates.

• Progress in Superconductivity
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• v.13 no.3
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• pp.158-162
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• 2012

$Y(Pr)Ba_2Cu_4O_8$ system is one of the most studied high temperature superconductors. Substitution of Pr for Y in this system suppresses $T_c$ and superconductivity finally disappears at a high Pr doping. There are competing theories for the suppression of $T_c$ but systematic experimental results are very rare. In order to find the change in Fermi surface topology which can affect the superconductivity, we have performed angle-resolved photoemission studies on single crystal samples of $YBa_2Cu_4O_8$ and $PrBa_2Cu_4O_8$. While the Fermi surface of $YBa_2Cu_4O_8$ shows a similar topology to those of other cuprates, we observe only 1D like band structures in $PrBa_2Cu_4O_8$. We find no significant differences in the chain band for both samples.