• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.15 no.8
• /
• pp.5213-5218
• /
• 2014

Organic memory devices were made using the plasma polymerization method. The memory device consisted of ppMMA(plasma polymerization MMA) thin films as the tunneling and insulating layer, and a Au thin film as the memory layer, which was deposited by thermal evaporation. The organic memory operation theory was developed according to the charging and discharging characteristics of floating gate type memory, which would be measured by the hysteresis voltage and memory voltage with the gate voltage values. The I-V characteristics of the fabricated memory device showed a hysteresis voltage of 26 [V] at 60 ~ -60 [V] double sweep measuring conditions. The programming voltage was applied to the gate electrode in accordance with the result of this theory. A programming voltage of 60[V] equated to a memory voltage of 13[V], and 80[V] equated to a memory voltage of 18[V]. The memory voltage of approximately 40 [%]increased with increasing programming voltage. The charge memory layer charging or discharging according to the theory of the memory was verified experimentally.

• The Journal of the Korea Contents Association
• /
• v.9 no.2
• /
• pp.163-172
• /
• 2009

As cultural contents are rising to the surface, the contents and interests regarding the industries that utilize the culture become higher than any other times. Culture is performed with memory, and the culture that excludes memory cannot exist. The memory exceeds a dimension of the individual and operates with an assembled and social memory. Furthermore the culture requires media to put memories inevitable. Therefore, recent image texts are coming to the attention as new storage media. So this essay analyzed the meaning of 'memory' as social-cultural memory by putting the sixth generation Chinese movies to the center and restoration of image text that puts memory in it. And also, I examined the cultural meanings of 'individual memories' as the 'counter memory' and tried to find the possibility of junction between memory industry and the contents. I focused on the sixth generation Chinese movies because these movies made remarkable progresses in the international film festivals though they were made in 'underground' by objecting to 'official memory' proposed by the Chinese government.

• Anxiety and mood
• /
• v.8 no.1
• /
• pp.3-8
• /
• 2012

Patients with panic disoder (PD) show recollection of their first panic attack, which resembles a trauma that is perceived as an unexpected frightening and subjectively life-threatening event. Information-processing models suggest that anxiety disorders may be characterized by a memory bias for threat-related information. This paper reviews the previous researches that investigated the implicit and/or explicit biases in patients with panic disorder. Among the 17 studies, which addressed the explicit memory bias in PD patients, 11 (64.7%) were found to be explicit memory bias in PD patients. In regards to the implicit memory bias, 4 out of 9 studies (44.4%) were found to support the memory bias. The result shows that evidence of explicit memory bias in PD patients was supported by a number of previous researches. However, evidence of implicit memory bias seems less robust, thus, needs further research for replication. Also, development of new paradigms and applications of various methods will be needed in further researches on memory bias in PD patients.

• Natural Product Sciences
• /
• v.22 no.4
• /
• pp.246-251
• /
• 2016

This study investigated the effects of (-)-sesamin on memory deficits in 1-methyl-4-phenyl-1,2,3,6-tetrahydropyridine (MPTP)-lesioned mouse model of Parkinson's disease (PD). MPTP lesion (30 mg/kg/day, 5 days) in mice showed memory deficits including habit learning memory and spatial memory. However, treatment with (-)-sesamin (25 and 50 mg/kg) for 21 days ameliorated memory deficits in MPTP-lesioned mouse model of PD: (-)-sesamin at both doses improved decreases in the retention latency time of the passive avoidance test and the levels of dopamine, norepinephrine, 3,4-dihydroxyphenylacetic acid, and homovanillic acid, improved the decreased transfer latency time of the elevated plus-maze test, reduced the increased expression of N-methyl-D-aspartate (NMDA) receptor, and increased the reduced phosphorylation of extracellular signal-regulated kinase (ERK1/2) and cyclic AMP-response element binding protein (CREB). These results suggest that (-)-sesamin has protective effects on both habit learning memory and spatial memory deficits via the dopaminergic neurons and NMDA receptor-ERK1/2-CREB system in MPTP-lesioned mouse model of PD, respectively. Therefore, (-)-sesamin may serve as an adjuvant phytonutrient for memory deficits in PD patients.

• Sleep Medicine and Psychophysiology
• /
• v.5 no.2
• /
• pp.177-184
• /
• 1998

Objectives : Disturbance of sleep with or without sleep apnea may impair the memory function. Sleep deficiency, sleepiness, sleep apnea and emotional problem in sleep disorders can induce an impairment of memory function. Methods : In this study, the polysomnographies were administered to 58 sleep apnea patients and 38 sleep disorder patients without sleep apnea. Their clinical symptoms were quantitatively evaluated. Short term and long term memory were evaluated before and after polysom no graphy with Digit symbol test and Rey-Osterrieth complex figure test. And correlations among various sleep, repiratory and clinical variables were statistically studied in order to explore which variables may influence on memory function. Results and Conclusions : Results are as follows. Depth of sleep cis positively correlated with memory function. As sleep apnea increases and average saturation of blood oxygen decreases, memory function is more impaired. Emotional depression, high blood pressure, obesity or alcohol impaired memory function. However, daytime sleepiness was not significantly correlated with memory function. The possible mechanisms how above factors influence on the memory function were discussed.

• The Transactions of the Korean Institute of Electrical Engineers D
• /
• v.55 no.10
• /
• pp.446-451
• /
• 2006

In this paper, we propose an implementation of JPEG2000 codec on the ARM9 Processor which includes independent memory management facility. The codec and memory management facility together can control the encoding and the decoding process effectively within available memory area. Embedded appliances like cellular phones have very limited internal memory which can't be expanded easily. However, they should provide various applications and services using restricted memory resources. The proposed codec with memory management can provide image quality that is identical to the original image on embedded platform. The implemented codec has no memory conflict with other applications. It shows that the proposed codec can manage memory resources efficiently.

• Electronics and Telecommunications Trends
• /
• v.39 no.1
• /
• pp.62-73
• /
• 2024

Artificial intelligence relies on data-driven analysis, and the data processing performance strongly depends on factors such as memory capacity, bandwidth, and latency. Fast and large-capacity memory can be achieved by composing numerous high-performance memory units connected via high-performance interconnects, such as Compute Express Link (CXL). CXL is designed to enable efficient communication between central processing units, memory, accelerators, storage, and other computing resources. By adopting CXL, a composable computing architecture can be implemented, enabling flexible server resource configuration using a pool of computing resources. Thus, manufacturers are actively developing hardware and software solutions to support CXL. We present a survey of the latest software for CXL memory utilization and the most recent CXL memory emulation software. The former supports efficient use of CXL memory, and the latter offers a development environment that allows developers to optimize their software for the hardware architecture before commercial release of CXL memory devices. Furthermore, we review key technologies for improving the performance of both the CXL memory pool and CXL-based composable computing architecture along with various use cases.

• Journal of KIISE:Computer Systems and Theory
• /
• v.37 no.3
• /
• pp.161-171
• /
• 2010

As embedded systems adopt monolithic kernels, NAND flash memory is used for swap space of virtual memory systems. While flash memory has the advantages of low-power consumption, shock-resistance and non-volatility, it requires garbage collections due to its erase-before-write characteristic. The efficiency of garbage collection scheme largely affects the performance of flash memory. This paper proposes a novel garbage collection technique which exploits data redundancy between the main memory and flash memory in flash memory-based virtual memory systems. The proposed scheme takes the locality of data into consideration to minimize the garbage collection overhead. Experimental results demonstrate that the proposed garbage collection scheme improves performance by 37% on average compared to previous schemes.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.2
• /
• pp.69-81
• /
• 2008

The density of Memory has been increased by great challenge for memory technology, so elements of memory become smaller than before and the sensitivity to faults increases. As a result of these changes, memory testing becomes more complex. The number of storage elements is increased per chip, and the cost of test becomes more remarkable as the cost per transistor drops. Proposed design doesn't need to control from outside environment, because it integrates into memory. The proposed scheme supports the various memory testing algorithms. Consequently, the proposed one is more efficient in terms of test cost and test data to be applied. Moreover, we proposed a reallocation algorithm for faulty memory parts. It has an efficient reallocation scheme with row and column redundant memory. Previous reallocation information is obtained from faulty memory every each tests. However proposed scheme avoids to this problem. because onetime test result from reallocation information can save to flash memory. In this paper, a reallocation scheme has been increased efficiency because of using flash memory.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.2 no.3
• /
• pp.197-204
• /
• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.