• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• The Bulletin of The Korean Astronomical Society
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• v.43 no.2
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• pp.35.2-35.2
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• 2018

Using the K-band Multi-object Spectrograph (KMOS) at the Very Large Telescope (VLT), the KMOS Redshift One Spectroscopic Survey (KROSS) has gathered integral-field data for ~800 star-forming galaxies at a redshift z~1, when the universe was roughly half its current age and forming the bulk of its stars. With spatially-resolved observations, KROSS reveals galaxies that are both gas-rich and highly turbulent. It is possible to derive the observed and baryonic Tully-Fisher (luminosity - rotation velocity) relations, thus constraining the mass-to-light ratios and total (luminous + dark) masses of the galaxies. This in turn highlights the dependence of the relation zero-point on the degree of rotational support of the galaxies (rotational velocity to velocity dispersion ratio). By degrading and analogously analysing integral-field data of hundreds of local galaxies from the Sydney-AAO Multi-object Integral-field Spectrograph (SAMI) survey, a robust comparison z=0 Tully-Fisher relation can also be derived, thus further constraining the luminous and dark mass growth of disk galaxies over the last 7 billions years. This unique comparison also reveals that systematic effects associated with sample selection and analysis methods are as large as the effects expected from cosmological evolution, and thus that most other comparisons employing heterogeneous data and/or methods can safely be ignored.

• Current Optics and Photonics
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• v.3 no.6
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• pp.510-515
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• 2019

In this paper, we introduce a 1.3-㎛ 25-GHz waveguide-integrated vertical PIN type Ge-on-Si photodetector fabricated using a multi-project wafers service based on fringing field analysis in the depletion region. In general, 1.3-㎛ photodetectors fabricated using a commercial foundry service can achieve limited bandwidths because a significant amount of photo-generated carriers are located within a few microns from the input along the device length, and they are influenced by the fringing field, leading to a longer transit time. To estimate the response time, we calculate the fringing field in that region and the transit time using the drift velocity caused by the field. Finally, we compare the estimated value with the measured one. The photodetector fabricated has a bandwidth of 20.75 GHz at -1 V with an estimation error of <3 GHz and dark current and responsivity of 110 nA and 0.704 A/W, respectively.

• 한국태양에너지학회:학술대회논문집
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• 2008.04a
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• pp.247-251
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• 2008

In this paper. we analyze electrical characteristics of photovoltaic module according to mechanical load test. Using the equipment for giving load on the surface of module, dark current-voltage is measured. By varying load from 0kg to 206kg, slight different I-V curve is detected. From this, reduced shunt resistance is roughly calculated and micro crack is assumed to be happened. system Through this experiment, periodic external force on PV module might give an negative effect. The detailed analysis is described in the following paper.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.135-139
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• 2014

Different power output of solar cells can be observed at high-temperature regions such as desert areas. In this study, performance dependence on operating temperature of crystalline silicon solar cells with different emitter types was analyzed. Based on the light current-voltage (LIV) measurement, temperature coefficients of short-circuit current density ($J_{SC}$), open-circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency were measured and compared for two groups of crystalline silicon solar cells with different emitter types. One group had homogeneously doped (conventional) emitter and another selectively doped (selective) emitter. Varying the operating temperature from 25 to 40, 60, and $80^{\circ}C$, LIV characteristics of the cells were measured and the properties of saturation current densities ($J_0$) were extracted from dark current-voltage (DIV) curve. From the DIV data, effect of temperature on the performance of the solar cells with different electrical structures for the emitter was analyzed. Increasing the temperature, both emitter structures showed a slight increase in $J_{SC}$ and a rapid degradation of $V_{OC}$. FF and power conversion efficiency also decreased with the increasing temperature. The degrees of $J_{SC}$ increase and $V_{OC}$ degradation for two groups were compared and explained. Also, FF change was explained by series and shunt resistances from the LIV data. It was concluded that the degradation of solar cells shows different values at different temperatures depending on the emitter type of solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.347-348
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• 2013

To obtain high conversion efficiency in InGaN-based solar cells, it is critical to grow high indium (In) composed InGaN layer for increasing sun light absorption wavelength rage. At present, most InGaN-based solar cells adopt InGaN/GaN multi-quantum-well (MQW) structure for high crystalline quality of InGaN with high In composition. In this study, we fabricated and compared the performances of two types of InGaN/GaN MQW solar cells which have the 15% (SC 15) and 25% (SC 25) of In composition at quantum well layer. Although both devices showed similar dark current density and leakage current, SC 15 showed better performance under AM 1.5G illumination as shown in Fig. 1. It is interesting to note that SC 25 showed severe current density decrease as increasing voltages. As a result, it lowered short circuit current density and fill factor of the device. However, SC 15 showed steady current density and over 75 % of fill factor. To investigate these differencesmore clearly, we analyzed their photoluminescence (PL) spectra under various applied voltages as shown in Fig. 2. At the same time, photocurrent, which was generated by PL excitation, was also measured as shown in Fig. 3. Further, we investigated the relationship between piezoelectric field and performance of InGaN based solar cell varying indium composition.

• Korean Journal of Optics and Photonics
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• v.18 no.2
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• pp.155-161
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• 2007

A new and simple method of 3-dimensional circuit modeling and analysis is proposed and verified experimentally for the first time by determining 3-dimensional current flow and 2-dimensional light distribution in blue InGaN/GaN multi-quantum well (MQW) light emitting diode (LED) devices. Circuit parameters of the LED consist of the resistance of the metallic film and epitaxial layer, and the intrinsic diode which represents the active region emitting the light. The circuit parameters are extracted from the transmission line model (TLM) and current-voltage relation. We applied the >> proposed method and extracted circuit parameters to obtain the light emission pattern in a top-surface emitting-type LED. The current spreading effect is analyzed theoretically and quantitatively with a variation of the resistance of metallic and epitaxial layers. The emitting-light distribution of the fabricated blue LED showed a good agreement with the analyzed result, which shows the dark emission intensity at the corner of the p-electrode.

• Journal of Korean Institute of Industrial Engineers
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• v.39 no.4
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• pp.260-270
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• 2013

This paper proposes a strategic portfolio model for managing performance of online games. The portfolio matrix is composed of two dimensions: financial performance and non-financial performance. Financial performance is measured by the conventional measure, average revenue per user (ARPU). In terms of non-financial performance, five non-financial key performance indicators (KPIs) that have been widely used in the online game industry are utilized: RU (Register User), VU (Visiting User), TS (Time Spent), ACU (Average Current User), MCU (Maximum Current User). Data envelopment analysis (DEA) is then employed to produce a single performance measure aggregating the five KPIs. DEA is a linear programming model for measuring the relative efficiency of decision making unit (DMUs) with multiple inputs and outputs. This study employs DEA as a tool for multiple criteria decision making (MCDM), in particular, the pure output model without inputs. Combining the two types of performance produces the online game portfolio matrix with four quadrants: Dark Horse, Stop Loss, Jack Pot, Luxury Goods. A case study of 39 online games provided by company 'N' is provided. The proposed portfolio model is expected to be fruitfully used for strategic decision making of online game companies.

• Bulletin of the Korean Space Science Society
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• 2011.04a
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• pp.28.1-28.1
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• 2011

Radiation-induced displacement damage which has caused the increase of the dark current in the focal plane adopted in the Ozone Monitoring Instrument (OMI) was studied in regards of the primary protons and the secondaries generated by the protons in the orbit. By using the Monte Carlo N-Particle Transport Code System (MCNPX) version 2.4.0 along with the Stopping and Range of Ions in Matter version 2010 (SRIM2010), effects of the primary protons as well as secondary particles including neutron, electron, and photon were investigated. After their doses and fluxes that reached onto the charge-coupled device (CCD) were examined, displacement damage induced by major sources was presented.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.243-248
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• 2015

We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of $10^{10}Ohm{\cdot}cm$ at room temperature with electrons lifetime of $2{\times}10^{-8}$ s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about $(4-5){\times}10^{12}cm^{-3}$ with the corresponding energy level at 0.8 - 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.