• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
• /
• pp.923-926
• /
• 2004

Active-matrix field emission display (AMFED) based on carbon nanotube (CNT) emitter and amorphous silicon thin-film transistor (a-Si TFT) is reviewed. The AMFED pixels consisted of a high-voltage a-Si TFT and mesh-gated CNT emitters. The developed AMFED panel showed a high performance with a driving voltage of below 15 V. The low-cost and large-area AMFED approach with a metal mesh technology will be discussed.

• 한국전기전자재료학회논문지
• /
• 제22권12호
• /
• pp.1058-1062
• /
• 2009

For the investigation of the mechanism of photoelectric characteristics of a hydrogenated amorphous silicon thin film transistor(a-Si:H TFT), spectral characteristics of various backlights were analyzed in terms of the photon energy at each wavelength. Photon energy spectral characteristics were obtained through the multiplication of each photon energy and spectral intensities of backlights at each wavelength and the total photon energies were obtained by the integration of the photon energy spectrums. From the comparison of the experimental photo leakage current and the calculated photon energy, it was possible to conclude that the absorption of illuminated backlight to a-Si:H layer and the generation of electrons and holes are mainly carried out at the wavelength less than 500 nm as described in previous reports.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
• /
• pp.168-171
• /
• 1997

TFT2DS was developed to provide the usefulness as an analytic and design tool. The static characteristics of a-Si:H TFTs demonstrated a good agreement between simulated and measured data. This paper shows that TFT2DS can optimize the physical parameters of a-Si:H through sensitivity simulations and compute the static characteristics of a-Si:H TFTs. Moreover, through the sensitivity study of the parameters, it is shown that the optimizations of both the physical parameters of a-Si:H and the parameters of a-Si:H deposition, which must be inter-related, might be possibl.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.1272-1275
• /
• 2008

We present the development of dry etch process for the liquid crystal display (LCD) fabrication using a dielectric barrier discharge (DBD) system at atmospheric pressure. In this experimental work, the dry etch characteristics and the electrical properties of thin film transistor are evaluated by using the scanning electron microscopy and electric probe, and TFT-LCD panel ($300\;mm\;{\times}\;400\;mm$) is manufactured with the application of the amorphous silicon etch step in the 4 mask and 5 mask processes.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.123-126
• /
• 2008

We report the improved AMOLED with a-Si TFT backplane based on our unique structure. Our new structure is called Dual-plate OLED Display (DOD). It can also achieve not only higher uniformity of luminance in large-sized display due to low electrical resistance of common electrode but also wider viewing angle.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.695-698
• /
• 2006

The photosensitive poly-siloxane material used as the passivation layers for the conventional back channel etched (BCE) thin film transistors (TFTs) has been investigated. Through the organic material, the TFT array fabrication process can be reduced and higher aperture ratio can be achieved for higher LCD panel performance. The interface between the organic passivation layer and the back channel of the amorphous active region has been improved by the back channel oxygen treatment and the devices exhibits lower leakage current than the conventional silicon nitride passivation layer of BCE TFTs. The leakage currents between Indium-tin-oxide (ITO) pixels and the TFT devices and its mechanism have also been investigated in this paper.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
• /
• pp.137-141
• /
• 1993

We studied the fabrication and electrical characteristics of high voltage hydrogenerated amorphous silicon thin film transistor using glow discharge plasma enchanced chemical vapor deposition (GDPECVD) with $2500{\AA}\;SiO_2$, $400-1500{\AA}$ a-Si thickness, 350V output voltage, 100V input voltaege, and $9.55{\times}10^4$ average on/off ratio. We found that leakage current of high voltage TFT occured 0-70V drain voltage.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
• /
• pp.531-534
• /
• 2005

This paper presents a new data line sharing technique for TFT-LCD panels. This technique reduces the number of data driver IC's to half by having two adjacent pixels share the same data line. This in turn doubles the number of gate lines, which are integrated directly on the glass substrate of amorphous silicon for further cost reduction and more compactness. The proposed technique with new pixel array structure was applied to 15.4 inch WXGA TFT-LCD panels and has proven that the number of driver IC's were halved with nearly 41% circuit cost reduction and 5.3% reduction in power consumption without degrading the image quality.

• 대한전기학회논문지
• /
• 제43권2호
• /
• pp.312-317
• /
• 1994

We studied the fabrication and electrical characteristics of high voltage hydrogenerated amorphous silicon thin film transistor using plasma enchanced chemical vapor deposition(PECVD). The device shows 2500${\AA}$ SiOS12T, 400-1500${\AA}$ a-Si tickness, 350V output voltage and 9.55${\times}$10S04T average on/off current ratio. We found that the leakage current of high voltage TFT occurred 0-70V drain voltage. As the leakage current depend on the a-Si thickness, the leakage current of high voltage TFT decreased by reduction of the a-Si thickness.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.129-130
• /
• 2008

Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFT) are fabricated by erbium silicided source/drain for n-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs have a large on/off current ratio with a low leakage current. Moreover, the electrical characteristics of poly-Si SB TFTs are significantly improved by the additional forming gas annealing in 2 % $H_2/N_2$, because the interface trap states at the poly-Si grain boundaries and at the gate oxide/poly-Si channel decreased.