• Korean Journal of Materials Research
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• v.8 no.10
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• pp.884-889
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• 1998

Amorphous silicon films of large area have been crystallized by a line shape excimer laser beam of one dimensional scanning with a gaussian profile in the scanning direction. In order to characterize the crystalline phase transition of thickness variables in excimer laser annealing(ELA), angle wrapping method was used. And also to characterize the residual stresses of crystalline phase transition in the case of angle wrapped-crystalline silicon on corning 7059 glass, polarized raman spectroscopies were measured at various laser energy density and substrate temperature. The residual stress varies from $9.0{\times}10^9$ to $9.9{\times}10^9$, and from $9.9{\times}10^9$ to $1.2{\times}10^10$dyne/${cm}^2$ of the substrate temperature at room temperature and varies from $8.1{\times}10^9$ to $9.0{\times}10^9$, and from $9.0{\times}10^9$ to $9.9{\times}10^9$dyne/${cm}^2$ of the substrate temperature at $400^{\circ}C$ as a function of direction from surface to substrate. According to the direction from the surface in liquid phase to the interface and from the interface to near the substrate in solid phase of recrystallized Si thin film, respectively. Thus, the stress is increased from(Liquid phase to solid phase) with phase transition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.127-127
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• 2009

The most important part of the fabrication solar cells is the anti-reflection coating when excludes the kinds of silicon substrates (crystalline, polycrystalline, or amorphous), patterns and materials of electrodes. Anti-reflection coatings reduce the reflection of sunlight and at last increase the intensity of radiation to inside of solar cells. So, we can obtain increase of solar cell efficiency about 10% using anti-reflection coating. There are many kinds of anti-reflection film for solar cell, such as SiN, $SiO_2$, a-Si, and so on. And, they have two functions, anti-reflection and passivation. However such materials could not perfectly prevent reflection. So, in this work, we investigated the anti-reflection coating with the columnar structure ZnO thin film. We synthesized columnar structure ZnO film on glass substrates. The ZnO films were synthesized using a RF magnetron sputtering system with a pure (99.95%) ZnO target at room temperature. The anti-reflection coating layer was sputtered by argon and oxygen gases. The angle of target and substrate measures 0, 20, 40, 60 degrees, the working pressure 10 mtorr and the 250 W of RF power during 40 minutes. The confirm the growth mechanism of ZnO on columnar structure, the anti-reflection coating layer was observed by field emission scanning electron microscopy (FE-SEM). The optical trends were observed by UV-vis and Elleso meter.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.395-402
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• 2011

The nanomechanical properties of fully lithiated and unlithiated silicon nanowire deposited on silicon substrate have been studied with atomic force microscopy. Silicon nanowires were synthesized using the vapor-liquid-solid process on stainless steel substrates using Au catalyst. Fully lithiated silicon nanowires were obtained by using the electrochemical method, followed by drop-casting on the silicon substrate. The roughness, derived from a line profile of the surface measured in contact mode atomic force microscopy, has a smaller value ($0.65{\pm}0.05$ nm) for lithiated silicon nanowire and a higher value ($1.72{\pm}0.16$ nm) for unlithiated silicon nanowire. Force spectroscopy was utilitzed to study the influence of lithiation on the tip-surface adhesion force. Lithiated silicon nanowire revealed a smaller value (~15 nN) than that of the Si nanowire substrate (~60 nN) by a factor of two, while the adhesion force of the silicon nanowire is similar to that of the silicon substrate. The elastic local spring constants obtained from the force-distance curve, also shows that the unlithiated silicon nanowire has a relatively smaller value (16.98 N/m) than lithiated silicon nanowire (66.30 N/m) due to the elastically soft amorphous structures. The frictional forces of lithiated and unlithiated silicon nanowire were obtained within the range of 0.5-4.0 Hz and 0.01-200 nN for velocity and load dependency, respectively. We explain the trend of adhesion and modulus in light of the materials properties of silicon and lithiated silicon. The results suggest a useful method for chemical identification of the lithiated region during the charging and discharging process.

• The Journal of Korean Society for Radiation Therapy
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• v.17 no.1
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• pp.19-31
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• 2005

Purpose : To supply the information of EPID system and to analyze the possibility of substitution EPID for film dosimetry. Materials & Methods : With amorphous silicon(aSi) type EPID and liquid filled lonization chamber(LC) type EPID, the reproducibility according to focus detector distance(FDD) change and gantry rotation was analyzed, and also the possible range of image acquisition was analyzed with Alderson Rando phantom. The resolution and the contrast of aSi type EPID image were analyzed through Las Vegas phantom and water phantom. DMLC image was analyzed with X-Omat V film and EPID to see wether it could be applied to the qualify assurance(QA) of IMRT. Results : The reproducibility of FDD position was within 1mm, but the reproducibility of gantry rotation was ${\pm}2,\;{\pm}3mm$ respectively. The resolution and the contrast of EPID image were affected by dose rate, image acquisition time, image acquisition method and frame number. According to the possible range of image acquisition of EPID, it is verified that the EPID is easier to use than film. There is no difference between X-Omat V film and EPID images for the QA of IMRT. Conclusion : Through various evaluation, we could obtain lots of useful information about the EPID. Because the EPID has digital data, also we found that the EPID is more useful than film dosimerty for the periodical Qualify Assurance of IMRT. Especially when it is difficult to do point dose measurement with diode or ionization chamber, the EPID could be very useful substitute. And we found that the diode and ionization chamber are difficult to evaluate the sliding window images of IMRT, but the EPID was more useful to do it.

• Journal of the Korean Society of Radiology
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• v.11 no.6
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• pp.525-529
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• 2017

As a photoconductive material with a high X-ray sensitivity, many researches about mercury iodide has been carried out to substitute for amorphous selenium. However, it has many limitations in commercialization because of the high leakage current. In this study, we fabricated $HgI_2$ unit-cells with mixed silicon oxide($SiO_2$) and titanium oxide($TiO_2$) to reduce a high leakage current and we evaluated an electrical properties of the fabricated unit-cells. As a result, we confirmed that both mixtures were effective in reduing the leakage current of the $HgI_2$ and x-ray sensitivity were significantly increased in fabricated $HgI_2-TiO_2$ unit-cell.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.173-179
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• 2018

Electrochemical characterization was conducted on poly(vinyl alcohol) (PVA)-ceramic composite (PVA-CC) separators for supercapacitor applications. The PVA-CC separators were fabricated by mixing various ceramic particles including aluminum oxide ($Al_2O_3$), silicon dioxide ($SiO_2$), and titanium dioxide ($TiO_2$) into a PVA aqueous solution. These ceramic particles help to create amorphous regions in the crystalline structure of the polymer matrix to increase the ionic conductivity of PVA. Supercapacitors were assembled using PVA-CC separators with symmetric activated carbon electrodes and electrochemical characterization showed enhanced specific capacitance, rate capability, cycle life, and ionic conductivity. Supercapacitors using the $PVA-TiO_2$ composite separator showed particularly good electrochemical performance with a 14.4% specific capacitance increase over supercapacitors using the bare PVA separator after 1000 cycles. With regards to safety, PVA becomes plasticized when immersed in 6 M KOH aqueous solution, thus there was no appreciable loss in tear resistance when the ceramic particles were added to PVA. Thus, the enhanced electrochemical properties can be attained without reduction in safety making the addition of ceramic nanoparticles to PVA separators a cost-effective strategy for increasing the ionic conductivity of separator materials for supercapacitor applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.295-295
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• 2016

Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1459-1462
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• 2008

In this paper we describe solutions to address critical challenges in direct fabrication of amorphous silicon thin film transistor (TFTs) arrays for active matrix flexible displays. For all flexible substrates a manufacturable handling protocol in automated display-scale equipment is required. For metal foil substrates the principal challenges are planarization and electrical isolation, and management of stress (CTE mismatch) during TFT fabrication. For plastic substrates the principal challenge is dimensional instability management.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.733-740
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• 2014

A resistive micro Pirani gauge using amorphous silicon (a-Si) thin membrane is proposed. The proposed Pirani gauge can be easily integrated with the other process-compatible membrane-type sensors, and can be applicable for in-situ vacuum monitoring inside the vacuum package without an additional process. The vacuum level is measured by the resistance changes of the membrane using the low noise correlated double sampling (CDS) capacitive trans-impedance amplifier (CTIA). The measured vacuum range of the Pirani gauge is 0.1 to 10 Torr. The sensitivity and non-linearity are measured to be 78 mV / Torr and 0.5% in the pressure range of 0.1 to 10 Torr. The output noise level is measured to be $268{\mu}V_{rms}$ in 0.5 Hz to 50 Hz, which is 41.2% smaller than conventional CTIA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.251-255
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• 2021

a-Si is commonly considered as a primary candidate for the formation of passivation layer in heterojunction (HIT) solar cells. However, there are some problems when using this material such as significant losses due to recombination and parasitic absorption. To reduce these problems, a wide bandgap material is needed. A wide bandgap has a positive influence on effective transmittance, reduction of the parasitic absorption, and prevention of unnecessary epitaxial growth. In this paper, the adoption of a-SiO_x:H as the intrinsic layer was discussed. To increase lifetime and conductivity, oxygen concentration control is crucial because it is correlated with the thickness, bonding defect, interface density (D_it), and band offset. A thick oxygen-rich layer causes the lifetime and the implied open-circuit voltage to drop. Furthermore the thicker the layer gets, the more free hydrogen atoms are etched in thin films, which worsens the passivation quality and the efficiency of solar cells. Previous studies revealed that the lifetime and the implied voltage decreased when the a-SiOx thickness went beyond around 9 nm. In addition to this, oxygen acted as a defect in the intrinsic layer. The D_it increased up to an oxygen rate on the order of 8%. Beyond 8%, the D_it was constant. By controlling the oxygen concentration properly and achieving a thin layer, high-efficiency HIT solar cells can be fabricated.