• 한국결정성장학회지
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• 제5권3호
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• pp.299-305
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• 1995

건식 spark 방법에 의하여 상온에서 광 발광하는 실리콘을 제작하였다. Anodically etching된 다공성 실리콘에 비하여 spark법에 의해 제조된 광 발광 peak는 520nm로 청색으로 전이되어 있었다. 또한 spark법으로 제조된 실리콘의 경우 UV 노출에 의한 광 발광력의 안정성이 매우 높게 나타났다. High resolution TEM, XRD 연구 결과를 통하여 spark법으로 제조한 실리콘은 작은 다결정성 nanocrystalline 입자가 주로 비정질 $SiO_2$에 의하여 에워 싸여져 있음을 확인할 수 있었다.

• 한국세라믹학회지
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• 제26권5호
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• pp.637-644
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• 1989

Beta-sialon powder(Z=1) was synthesized by the simultaeous reduction and nitridation of the mixed powders of Hadong kaolin and silica. Silicon hydroxide was prepared from Si-alkoxide by a hydrolysis method and amorphous silica was obtained from the calcination of the prepared silicon hydroxide. Hadong kaolin was mixed with both the silicon hydroxide and amorphous silica, respectively. The average particle size was 4${\mu}{\textrm}{m}$ and the morphology of particle was rod-like and equiaxed in the case of beta-sialon powder prepared form Hadong kaolin and silicon hydroxide(COMPOSITION A), whereas the average particle size was 3${\mu}{\textrm}{m}$ and the morphology of particle was equiaxed in the case of beta-sialon powder prepared from Hadong kaolin and amorphous silica(COMPOSITION B). The synthesized beta-sialon powders were hot-pressed at 175$0^{\circ}C$ for 2 hours under 30 MPa in a nitrogen atmosphere after YAG composition(8wt%) was added to these powders as a sintering agent. The hot-pressed specimens were annealed a 140$0^{\circ}C$ for 4 hours in a nitrogen atmosphere. The mechanical properties of sintered bodies were investigated in terms of M.O.R., fracture toughness and hardness. The measured values are as follows. COMPOSITION A : M.O.R. 508MPa, KIC 3.5MN/m3/2, hardness 13.6GPa. COMPOSITION B : M.O.R. 653MPa, KIC 5.4MN/m3/2, hardness 13.5GPa.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.106-109
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• 1990

We develop the analytical model of the static and dynamic characteristics of hydrogenated amorphous silicon thin film transistors. It is found out that, compared with the conventional MOS model, our a-Si model has been in better agreement with experimental static and dynamic results. It may be also suggested that our a-Si model is suitable for incorporation into a widely used curcuit simulation.

• 센서학회지
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• 제19권2호
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• pp.130-136
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• 2010

The microbolometer array sensor with fine pitch pixel array has been implemented to the released amorphous silicon layer supported by two contact pads. For the design of focal plane mirror with geometrical flatness, the simple beam test structures were fabricated and characterized. As the beam length decreased, the effect of beam width on the bending was minimized, Mirror deformation of focal plane in a real pixel showed downward curvature by residual stress of a-Si and Ti layer. The mirror tilting was caused by the mis-align effect of contact pad and confirmed by FEA simulation results. The properties of bolometer have been measured as such that the NETD 145 mK, the TCR -2 %/K, and thermal time constant 1.99 ms.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.15-16
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• 2000

The gate bias stress effect of the hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with a $SiN_x/BCB$ gate insulator have been studied. The gate planarization was carried out by spin-coating of BCB (benzocyclobutene) on Cr gates. The BCB exhibits charge trappings during a high gate bias, but the stability of the TFT is the same as conventional one when it is between -25 V and +25 V. The charge trap density in the BCB increases with its thickness.

• 한국세라믹학회지
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• 제32권7호
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• pp.832-838
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• 1995

The densifying behavior of ultrafine amorphous Si3N4 (about 20 nm)-$\beta$-SiC (about 40~80 nm) powders (O2 : 1.3~15wt%, 0$700^{\circ}C$ within 15 sec and then immediately cooled and held at 135$0^{\circ}C$ for 10 min in N2 atmosphere without resorting to additives using a Xe image heating apparatus. Using an ultrafine pure Si3N4 powder with particle size less than 30nm, further more, mixed with an appropriate amount of $\beta$-SiC, was found to be advantageous to obtain uniform and homogeneous microstructure. In addition, ultrafine Si3N4 powders were also proved to be effective as sintering additive on densifying large sized Si3N4 powder compacts.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.155-158
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• 2000

NMR study has been used for measuring precise quantity of the amorphous phase in the $Si_3N_4$powder. Care must be taken to allow the $^{29}$Si nuclear spin system to fully relax between pulses in order to make the signals proportional to the number of nuclei in each phase. $^{29}$Si MAS spectrum was decomposed into the three spectra of $\alpha$-, $\beta$-, and amorphous $Si_3N_4$assuming pseudo-Voigt function. Moreover, the Rietveld analysis of the powder X-ray diffraction data was performed to measure quantity of crystalline phases as $\alpha/\beta$ ratio.

• 한국결정성장학회지
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• 제11권2호
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• pp.56-59
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• 2001

RF plasma CVD법에 의해 증착된 비정질 실리콘 박막은 Si(100)웨이퍼와 유리에 각각 증착되었다. 본 연구에서는 RF power가 미세결정 실리콘 박막의 광학적 밴드갭($E_g$),투과도 그리고 결정성에 미치는 영향을 조사하였다 라만 분광분석 결과 미세결정 실리콘은 480과 520$cm^{-1}$에서 두개의 피크 즉, 비정질과 미세결정의 혼상으로 구성되어 있음을 확인할 수 있었고 XRD분석에서도 (111)방향의 피크가 RF power 300Ｗ에서 관찰되었다. 또한, 박막의 투과도는 자외/가시부 분광 광도계를 이용하였으며, 적외 흡광 스펙트럼을 사용하여 실리콘과 결합하고 있는 수소의 형태를 고찰하였다.

• 전자공학회논문지A
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• 제33A권5호
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• pp.117-124
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• 1996

The .mu.c-Si:H films have been deposited by PeCVD at the various conditions such as hydrogen dilution ratio, substrate temperature and RF power density. Then, we studied their electrical and optical properties. Top gate hydrogenated micro-crystalline silicon thin film transistors($\mu$c-Si:H TFTs) using $\mu$-Si:H and a-SiN:H films have been fabricated by FECVD. The electrical characteristics of the devices have been investigated by semiconductor parameter analyzer and compared with amorphous silicon thin film transistors (a-Si:H TFTs). In this study, on/off current ratio, threshold voltage and the field effect mobility of the $\mu$c-Si:H TFT were $3{\times}10^{4}$, 5.06V and 0.94cm$^{2}$Vs, respectively.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2000년도 추계학술발표강연 및 논문개요집
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• pp.119-119
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• 2000