• 제목/요약/키워드: amorphous materials

검색결과 1,758건 처리시간 0.027초

Electrical Properties of Organic Materials as Low Dielectric Constant Materials

  • Oh Teresa;Kim Hong Bae;Kwon Hak Yong;Son Jae Gu
    • 반도체디스플레이기술학회지
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    • 제4권3호
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    • pp.5-9
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    • 2005
  • The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link break-age structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.

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Enhanced Crystallization of Amorphous Silicon using Electric Field

  • Song, Kyung-Sub;Jun, Seung-Ik;Park, Sang-Hyun;Park, Duck-Kyun
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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    • pp.243-246
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    • 1997
  • A new technique for low temperature crystallization of amorphous silicon, called field aided lateral crystallization(FALC) was attempted. To demonstrate the concept of FALC, thin layer of nickel(30${\AA}$) was deposited on top of amorphous silicon film and the electric field was applied during the crystallization. The effects of electric field on the crystallization behavior of amorphous silicon film were investigated.

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비정질 합금의 부식저항성에 미치는 열처리의 영향 (Effect of Isothermal annealing on the Corrosion Resistance of an Amorphous Alloy)

  • 신상수;이창면;양재웅;이재철
    • 대한금속재료학회지
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    • 제46권2호
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    • pp.53-57
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    • 2008
  • This study examined the role of excess free volume on the corrosion resistance of an amorphous alloy. Corrosion behaviors were monitored on the amorphous alloys, of which amount of free volume was controlled via the isothermal annealing below the glass transition temperature, using immersion tests and potentiodynamic polarization tests in HCl aqueous solutions. It was found that the corrosion resistance of the amorphous alloy is improved by reducing the amount of excess free volume. The possible reason explaining the experimental result was discussed from the viewpoint of the internal energy associated with the annihilation of excess free volume.

균일변형시 비정질 합금의 에너지 흡수력 평가 (Energy Absorption Capability of Amorphous Alloys During Homogeneous Deformation)

  • 박경원;이창면;이홍기;이재훈;이재철
    • 대한금속재료학회지
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    • 제46권9호
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    • pp.572-576
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    • 2008
  • Elastostatic compression tests were carried out on amorphous alloys to evaluate their energy absorption capability during homogeneous deformation at room temperature. Experiments demonstrated that a compressive stress below the global yield imposed on amorphous alloys for extended periods causes homogeneous plastic strain associated with the irreversible structural disordering. During the disordering process, free volume was created, dissipating the externally applied strain energy and the rate of creation was found to converge to a saturated value. We evaluated the capability of energy absorption of amorphous alloys during homogeneous deformation using recent theories on the evolution of the structural state.

Formation of Amorphous Oxide Layer on the Crystalline Al-Ni-Y Alloy

  • Kim, Kang Cheol;Kim, Won Tae;Kim, Do Hyang
    • Applied Microscopy
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    • 제43권4호
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    • pp.173-176
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    • 2013
  • The oxidation behavior of the crystallized $Al_{87}Ni_3Y_{10}$ alloy has been investigated with an aim to compare with that of the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The oxidation at 873 K occurs as follows: (1) growth of an amorphous aluminum-yttrium oxide layer (~10 nm) after heating up to 873 K; and (2) formation of $YAlO_3$ crystalline oxide (~220 nm) after annealing for 30 hours at 873 K. Such an overall oxidation step indicates that the oxidation behavior in the crystallized $Al_{87}Ni_3Y_{10}$ alloy occurs in the same way as in the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The simultaneous presence of aluminum and yttrium in the oxide layer significantly enhances the thermal stability of the amorphous structure in the oxide phase. Since the structure of aluminum-yttrium oxide is dense due to the large difference in ionic radius between aluminum and yttrium ions, the diffusion of oxygen ion through the amorphous oxide layer is limited thus stabilizing the amorphous structure of the oxide phase.

Electrical Properties of Organic Materials as Low Dielectric Constant Materials

  • Oh Teresa;Kim Hong Bae;Kwon Hak Yong;Son Jae Gu
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
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    • pp.67-72
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    • 2005
  • The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link breakage structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.

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Application of 532 nm YAG-Laser Annealing to Crystallization of Amorphous Si Thin Films Deposited on Glass Substrates

  • Lee, Jong-Won;So, Byung-Soo;Chung, Ha-Seung;Hwang, Jin-Ha
    • 한국재료학회지
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    • 제18권3호
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    • pp.113-116
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    • 2008
  • A 532 nm Nd-YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of a Nd-YAG laser to low-temperature polycrystalline Si technology. The irradiation of a green laser was controlled during the crystallization of amorphous Si thin films deposited onto glass substrates in a sophisticated process. Raman spectroscopy and UV-Visible spectrophotometry were employed to quantify the degree of crystallization in the Si thin films in terms of its optical transmission and vibrational characteristics. The effectiveness of the Nd-YAG laser is suggested as a feasible alternative that is capable of crystallizing the amorphous Si thin films.

벌크 비정질 합금의 초저온 소성 (Enhanced Plasticity of Bulk Amorphous Alloys at Cryogenic Temperature)

  • 윤규상;이미림;이재철
    • 대한금속재료학회지
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    • 제48권8호
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    • pp.699-704
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    • 2010
  • We investigated the cryogenic temperature plasticity of a bulk amorphous alloy. Experiments showed that as temperature decreases, the plasticity of the alloy increases, such that the alloy exhibited ~20% of plastic strain when tested at $-196^{\circ}C$. This enhancement in the plasticity at cryogenic temperatures was associated with the formation of abundant shear bands distributed uniformly over the entire surface of the sample. Nonetheless, the serrations, the characteristic feature of the plastic deformation of amorphous alloys, were unclear at $-196^{\circ}C$. In this study, both the enhanced plasticity and the unclear serrations exhibited by the amorphous alloy at cryogenic temperatures were clarified by exploring shear banding behaviors in the context of the velocity and the viscosity of a propagating shear band.