• Korean Journal of Metals and Materials
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• v.47 no.11
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• pp.687-693
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• 2009

Experiments have demonstrated that a moderate amount of Be added to $Zr_{57.5}Cu_{38.3}Al_{4.2}$ amorphous alloy enhances the plasticity of the alloy. In particular, $Zr_{54}Cu_{36}Al_{4}Be_{6}$ alloy exhibited 19% of strain to fracture along with a strength exceeding 2 GPa. Energy dispersive x-ray spectroscopy conducted on the $Zr_{54}Cu_{36}Al_{4}Be_{6}$ alloy exhibited the presence of compositional modulation, indicating that nm-scale phase separation had occurred at local regions. In this study, the role played by the nm-scale phase separation on the plasticity was investigated in terms of structural disordering, structural softening and shear localization in order to better understand the structural origin of the enhanced plasticity shown by the developed alloy.

• Archives of Metallurgy and Materials
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• v.67 no.4
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• pp.1459-1463
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• 2022

The soft magnetic properties of Fe-based amorphous alloys can be controlled by their compositions through alloy design. Experimental data on these alloys show some discrepancy, however, with predicted values. For further improvement of the soft magnetic properties, machine learning processes such as random forest regression, k-nearest neighbors regression and support vector regression can be helpful to optimize the composition. In this study, the random forest regression method was used to find the optimum compositions of Fe-Si-B-C alloys. As a result, the lowest coercivity was observed in Fe_80.5Si_3.63B_13.54C_2.33 at.% and the highest saturation magnetization was obtained Fe_81.83Si_3.63B_12.63C_1.91 at.% with R² values of 0.74 and 0.878, respectively.

• Journal of Korea Foundry Society
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• v.34 no.2
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• pp.60-66
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• 2014

A Zr-based amorphous alloy specimen was produced by vacuum die casting process. The salt spray test was carried out using the specimens in the as-cast, $Al_2O_3$ and $ZrO_2$ particle blasted state. Using these specimens, the SEM-EDX and XRD analyses, DSC measurement and bending strength test were conducted. After the salt spray test, the specimens were not experienced phase change and thermal characteristics of the alloys were remained unchanged. In the as-cast specimen, corrosion products were not observed. However, in the $Al_2O_3$ particle blasted specimen, pitting corrosion occurred and the detected corrosion products were $ZrCl_2$ and $NaZrO_3$. Due to the salt spray test, bending strength of the $Al_2O_3$ blasted specimens showed about 100 MPa lower strength than the other specimens. The bending fracture surface was vein pattern which was shown typically in the amorphous alloys.

• Journal of Welding and Joining
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• v.25 no.3
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• pp.28-36
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• 2007

A bulk amorphous NiTiZrSiSn powder produced using an inert gas atomization was sprayed by kinetic spraying process that is basically a solid-state deposition process onto a mild steel substrate. They were successfully overlaid onto the mild steel substrate. In order to evaluate the tribological behavior of the kinetic sprayed NiTiZrSiSn BMG (Bulk Metallic Glass) coatings, a partially crystallized coating and a fully crystallized coating were prepared by the isothermal heat treatments. Tribological behaviors were investigated in view of friction coefficient, hardness and amorphous phase fraction of coating layer. Surface morphologies and depth in the wear tracks were observed and measured by scanning electron microscope and alpha-step. From the examination of the scratch wear track microstructure, transition from the ductile like deformation (micro cutting) to the brittle deformation (micro fracturing) in the scratch groove was observed with the increase of the crystallinity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.693-696
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• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.186-191
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• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.6
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• pp.256-259
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• 2006

The amorphous $SiO_x$ nanowires were synthesized by the vapor phase epitaxy (VPE) method. $SiO_x$ nanowires were formed on silicon wafer of temperatures ranged from $800{\sim}1100^{\circ}C$ and nickel thin film was used as a catalyst for the growth of nanowires. A vapor-liquid-solid (VLS) mechanism is responsible for the catalyst-assisted amorphous $SiO_x$ nanowires synthesis in this experiment. The SEM images showed cotton-like nanostructure of free standing $SiO_x$ nanowires with the length of more than about $10{\mu}m$. The $SiO_x$ nanowires were confirmed amorphous structure by TEM analysis and EDX spectrum reveals that the nanowires consist of Si and O.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Journal of the Korean institute of surface engineering
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• v.45 no.6
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• pp.242-247
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• 2012

Yb-doped ITO (ITO:Yb) films were deposited on unheated non-alkali glass substrates by magnetron cosputtering using two cathodes (DC, RF) equipped with the ITO and $Yb_2O_3$ target, respectively. The composition of the ITO:Yb films was controlled by adjusting the RF powers from 0 W to 480 W in 120 W steps with the DC power fixed at 70 W. The ITO:Yb films had a higher crystallization temperature ($200^{\circ}C$) than that of the ITO films ($170^{\circ}C$), which was attributed to both larger ionic radius of $Yb^{3+}$ and higher bond enthalpy of $Yb_2O_3$, compared to ITO. This amorphous ITO:Yb film post-annealed at $170^{\circ}C$ showed a resistivity of $5.52{\times}10^{-4}{\Omega}cm$, indicating that a introduction of Yb increased resistivity of the ITO film. However, these amorphous ITO:Yb films showed a high etching rate, fine pattering property, and a very smooth surface morphology above the crystallization temperature of the amorphous ITO films (about $170^{\circ}C$). The transmittance of all films was >80% in the visible region.

• Journal of Hydrogen and New Energy
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• v.19 no.4
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• pp.359-366
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• 2008

Hydrogen as a high-quality and clean energy carrier has attracted renewed and ever-increasing attention around the world in recent years, mainly due to developments in fuel cells and environmental pressures including climate change issues. In this processes for hydrogen production from fossil fuels, separation and purification is a critical technology. $(Ni_{60}-Nb_{40})_{95}-Pd_5$ alloy ingots were prepared by arc-melting the mixture of pure metals in an Ar atmosphere. Melt-spun ribbons were produced by the single-roller melt-spinning technique in an Ar atmosphere. Amorphous structure and thermal behavior were characterized by XRD and DSC. The permeability of the $(Ni_{60}-Nb_{40})_{95}-Pd_5$ amorphous alloy membrane was characterized by hydrogen permeation experiments in the temperature range 623 to 773 K and pressure of 2 bars. The maximum hydrogen permeability was $3.54{\times}10^{-9}[mol{\cdot}m^{-1}s^{-1}{\cdot}pa^{-1/2}]$ at 773 K for the $(Ni_{60}-Nb_{40})_{95}-Pd_5$ amorphous alloy.