• 한국재료학회지
• /
• 제17권11호
• /
• pp.574-579
• /
• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Applied Microscopy
• /
• 제46권1호
• /
• pp.32-36
• /
• 2016

The Cu-based bulk glassy alloys in Cu-Zr-Ti-Ni systems were prepared by means of copper mold casting. The Cu-based bulk glassy alloys samples were tested by X-ray diffractomer (XRD), differential scanning calorimeter, scanning electron microscopy (SEM), Instron testing machine and Vickers hardness instruments. The result indicated that the prepared Cu-Zr-Ti-Ni alloys were bulk glassy alloys. The temperature interval of supercooled liquid region (${\Delta}T_x$) was about 45.48 to 70.98 K for the Cu-Zr-Ti-Ni alloy. The Vickers hardness was up to 565 HV for the $Cu_{50}Zr_{25}Ti_{15}Ni_{10}$ bulk glassy alloy. The $Cu_{50}Zr_{25}Ti_{15}Ni_{10}$ bulk glassy alloys were annealed in order to obtain nanocrystals. The results showed that the Vickers hardness was raise up to 630 HV from 565 HV. As shown in XRD results, the amorphous alloys changed to nanocrystals, which were $Cu_8Zr_3$, $Cu_3Ti_2$ and CuZr, improved the hardness. The SEM analysis showed that the compression fractured morphology of amorphous alloys was brittle fracture, and the fracture morphology after annealing was ductile fracture. This proved that annealing of amorphous to nanocrystals can improve the plasticity and toughness of amorphous alloys.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.546-549
• /
• 2009

In this paper, we investigated the effects of different source/drain (S/D) electrode materials in thin film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) semiconductor. A transfer length and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with a field-effect mobility (${\mu}_{FE}$) of 10.0 $cm^2$/Vs.

• 소성∙가공
• /
• 제13권8호
• /
• pp.696-703
• /
• 2004

The purpose of this study is to examine the bulk/sheet forming characteristics of bulk amorphous alloys in the super cooled liquid state. Recently it is reported that amorphous alloys exhibit stress overshoot/undershoot and non-Newtonian behaviors even in the super cooled liquid state. The stress-strain curves with the temperature-dependences as well as strain-rate dependence of Newtonian/non-Newtonian viscosities of amorphous alloys are obtained based on the previous experimental works. Then, those curves are directly used in the thermo-mechanical finite element analyses. Upsetting and deep drawing of amorphous alloys are simulated to examine the effects of process parameters such as friction coefficient, forming speed and temperature. It could be concluded that the superior formability of an amorphous alloy can be obtained by taking the proper forming conditions.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권2호
• /
• pp.159-164
• /
• 1996

The development of an insulated coating which can be used for amorphous alloys is extremely important from the practical point of view. This importance may be enhanced by the influence of the coating on the magnetic properties. The purpose of this study is to show how new developed insulating coating materials and method influence the magnetic properties of amorphous Fe/sub 87/Zr/sub 7/B/sub 5/Ag/sub 1/(at%) ribbon.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 추계학술발표대회
• /
• pp.28.1-28.1
• /
• 2011

We deposited the carbon films on Ni substrates by thermal atomic layer deposition (th-ALD), for the first time, using carbon tetrabromide ($CBr_4$) precursors and H2 reactants at two different temperatures (573 K and 673 K). Morphology of carbon films was characterized by scanning electron microscopy (SEM). The carbon films having amorphous carbon structures were analyzed by X-ray photoemission spectroscopy (XPS) and Raman spectroscopy. As the working temperature was increased from 573 K to 673 K, the intensity of C1s spectra was increased while that of O1s core spectra was reduced. That is, the purity of carbon films containing bromine (Br) atoms was increased. Also, the thin amorphous carbon films (ALD 3 cycle) were transformed to multilayer graphene segregated on Ni layer, through the post-annealing and cooling process.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.125-126
• /
• 2007

Polycrystalline silicon thin-film-transistors (Poly-Si TFT's) with a amorphous-$Si_xGe_y$ seed layer have been fabricated to improve the performance of TFT. The dependence of crystal structure and electrical characteristics on the the Ge fractions in $Si_xGe_y$ seed layer were investigated. As a result, the increase of grain size and enhancement of electrical characteristics were obtained from the poly-Si TFT's with amorphous-SixGey seed layer.

• 마이크로전자및패키징학회지
• /
• 제25권4호
• /
• pp.101-104
• /
• 2018

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

• 한국분말재료학회지
• /
• 제30권1호
• /
• pp.47-52
• /
• 2023

The purpose of this study is to develop and evaluate amorphous spray-dried microparticles (SDM) containing levosulpiride to increase its solubility. SDM are prepared via solvent evaporation using polyvinylpyrrolidone (PVP) as the water-soluble polymer and Cremophor RH40 as the surfactant. The SDM is prepared by varying the amounts of PVP and Cremophor RH40, and its physicochemical properties, solubility, and dissolution are confirmed. All levosulpiride-loaded SDMs converted the crystalline drug into an amorphous form, significantly improving drug solubility and dissolution compared with the drug alone. SDM consisting of drug/PVP/Cremophor RH40 in a weight ratio of 5:10:3, with increased solubility (720 ± 36 vs. 1822 ± 51 ㎍/mL) and dissolution rate (10.3 ± 2.2 vs. 92.6 ± 6.0%) compared with drug alone, shows potential as a commercial drug for improved oral bioavailability of levosulpiride.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
• /
• pp.1425-1428
• /
• 2007

The amorphous IZO on flexible substrate (PC) shows similar electrical conductivity and optical transmittance with commercial ITO glass even though it was prepared at $<50\;^{\circ}C$. Moreover, it exhibits little resistance change during 5000 bending cycles, demonstrating good mechanical robustness. A green phosphorescent OLED fabricated on amorphous IZO on flexible PC shows maximum external quantum efficiency of ${\eta}_{ext}=13.7\;%$ and power efficiency of ${\eta}_p=32.7\;lm/W$, which are higher than a device fabricated on a commercial ITO on glass (${\eta}_{ext}=12.4%$ and ${\eta}_p=30.1\;lm/W$) and ITO on flexible PC (${\eta}_{ext}=8.5%$ and ${\eta}_p=14.1\;lm/W$).