• 한국분말재료학회지
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• 제16권5호
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• pp.326-335
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• 2009

Fe based (Fe$_{68.2}$C$_{5.9}$Si$_{3.5}$B$_{6.7}$P$_{9.6}$Cr$_{2.1}$Mo$_{2.0}$Al$_{2.0}$) amorphous powder, which is a composition of iron blast cast slag, were produced by a gas atomization process, and sequently mixed with ductile Cu powder by a mechanical ball milling process. The Fe-based amorphous powders and the Fe-Cu composite powders were compacted by a spark plasma sintering (SPS) process. Densification of the Fe amorphous-Cu composited powders by spark plasma sintering of was occurred through a plastic deformation of the each amorphous powder and Cu phase. The SPS samples milled by AGO-2 under 500 rpm had the best homogeneity of Cu phase and showed the smallest Cu pool size. Micro-Vickers hardness of the as-SPSed specimens was changed with the milling processes.

• 한국재료학회지
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• 제12권11호
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• pp.883-888
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• 2002

We investigated the void formation in composite-titanium silicide($TiSi_2$) process. We varied the process conditions of polycrystalline/amorphous silicon substrate, composite $TiSi_2$ deposition temperature, and silicidation annealing temperature. We report that the main reason for void formation is the mass transport flux discrepancy of amorphous silicon substrate and titanium in composite layer. Sheet resistance in composite $TiSi_2$ without patterns is mainly affected by silicidation rapid thermal annealing (RTA) temperature. In addition, sheet resistance does not depend on the void defect density. Sheet resistance with sub-0.5 $\mu\textrm{m}$ patterns increase abnormally above $850^{\circ}C$ due to agglomeration. Our results imply that $sub-750^{\circ}C$ annealing is appropriate for sub 0.5 $\mu\textrm{m}$ composite X$sub-750_2$ process.

• 한국재료학회지
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• 제13권3호
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• pp.150-154
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• 2003

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.

• 한국주조공학회지
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• 제32권4호
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• pp.177-180
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• 2012

Ti-based bulk metallic glasses with high glass forming ability were developed through a systematic alloy design technique. The main alloy design strategy was the selection of alloying elements that may not be toxic in the human body. The $Ti_{45.0}Cu_{40.1}Zr_{12.7}Si_{2.2}$ alloy could be cast into an amorphous rod with the diameter of 3 mm by a suction casting technique using Cu mold. The compressive strength of the amorphous rod was measured as 1826 MPa. Since the Ti-based amorphous alloys consist of non-toxic elements, they can be widely used as bio-materials and eco-materials with unique and beneficial properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.112-113
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• 2006

In this paper. we investigated a characteristic of holographic grating data erasure with non-polarized beam at amorphous chalcogenide As-Ge-Se-S thin film. A sample of holographic grating data was formed with DPSS laser for setup. Then, the erasure process was performed with He-Ne laser vertically at sample. As-Ge-Se-S(single layer). Ag/As-Ge-Se-S(double layer) and As-Ge-Se-S/Ag/As-Ge-Se-S(multi-layer) are manufactured to compare their characteristic of erasure.

• 한국재료학회지
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• 제13권5호
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• pp.303-308
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• 2003

Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH$_4$and $N_2$as reaction gases were thermally annealed at various temperatures under$ N_2$atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above $600^{\circ}C$ a small amount of crystalline $\beta$-$C_3$$N_4$ phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the $sp^3$ bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.

• 한국재료학회지
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• 제12권4호
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• pp.279-282
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• 2002

The effect of field annealing on the velocity changes of magneto surface acoustic wave (MSAW) devices has been investigated for deposited $(Fe_{1-x}Co_x)_{89}Zr_{11}$ (x = 0~1.0) amorphous films. By means of two step field annealing at $195^{\circ}C$ for 10 minute in the magnetic field of 130 Oe, the MSAW device with x=0.4 film among the devices showed the superior velocity change of 0.1 %. This gigantic value was obtained in the DC bias field of 40 Oe at the exciting frequency of 8.7 MHz. It was confirmed that such behavior was due to the variation of differential permeability caused by an optimal stress within the magnetic film.

• ETRI Journal
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• 제35권4호
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• pp.730-733
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• 2013

In this work, buffer layers with various conditions are inserted at an n/i interface in hydrogenated amorphous silicon semitransparent solar cells. It is observed that the performance of a solar cell strongly depends on the arrangement and thickness of the buffer layer. When arranging buffer layers with various bandgaps in ascending order from the intrinsic layer to the n layer, a relatively high open circuit voltage and short circuit current are observed. In addition, the fill factors are improved, owing to an enhanced shunt resistance under every instance of the introduced n/i buffer layers. Among the various conditions during the arrangement of the buffer layers, a reverse V shape of the energy bandgap is found to be the most effective for high efficiency, which also exhibits intermediate transmittance among all samples. This is an inspiring result, enabling an independent control of the conversion efficiency and transmittance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1331-1332
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• 2007

In the present works, we investigate the thermal characteristics on Ag/$As_{2}S_{3}$ and Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film structure for PMC (Programmable Metallization Cell).As the results of resistance change with the temperature on Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film, the resistance was abruptly dropped from the initial resistance of 1.32 M ${\Omega}$ to the saturated value of 800 ${\Omega}$ at $203^{\circ}C$. On the other hand, the resistance increased to 1.3 $M{\Omega}$ at $219^{\circ}C$.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.155-158
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• 2000

NMR study has been used for measuring precise quantity of the amorphous phase in the $Si_3N_4$powder. Care must be taken to allow the $^{29}$Si nuclear spin system to fully relax between pulses in order to make the signals proportional to the number of nuclei in each phase. $^{29}$Si MAS spectrum was decomposed into the three spectra of $\alpha$-, $\beta$-, and amorphous $Si_3N_4$assuming pseudo-Voigt function. Moreover, the Rietveld analysis of the powder X-ray diffraction data was performed to measure quantity of crystalline phases as $\alpha/\beta$ ratio.