• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.190-191
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• 1994

In this paper, We study on the fabrication of amorphous this film of zeromagnetostriction material and the magnetic properties. This films are fabricated by using sputtering method with input power of 400∼607[W], Ar gas pressure of 3∼ 9[mTorr] and target composition of Fe$\sub$4.7/ Co$\sub$74.3/Si$_2$B$\sub$19/. Sample this films with diameter of 14[mm ] and thickness of 27-30[$\mu\textrm{m}$] were obtained through experiments. When we analyzed the magnetic properties before and after annealing with sample thin films, we confirmed that magnetic domain wall amorphous thin films consisted for Neel magnetic domain wall with the width of about 1[$\mu\textrm{m}$].

• Journal of Magnetics
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• v.18 no.2
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• pp.86-89
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• 2013

This paper shows a new effective approach to measure crystallization temperature of soft magnetic underlayer (SUL) for next generation of heat assisted perpendicular recording media. This approach uses temperature dependent reflectivity, which shows a clear jump when samples are crystallized. To achieve this measurement, an optical system is set up using hot plate and infrared laser. Reflectivity of SUL $(Co_{70}Fe_{30})_{92}Ta_3Zr_5$ shows a clear jump at its amorphous-crystalline transition temperature. Experiment results show this effect is clear in infrared region, and is weak for visible light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.89-92
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• 1996

In this paper, we mention the study on the sensing function of amorphous magneto- striction wire with about 125${\mu}{\textrm}{m}$$\Phi$ in diameter. The wire in fabricated by using injection and quenching method under the high speed rotating water flow. The wire\`s compotion is (Fe$_{75}$ $Co_{25}$)$_{77}$Si$_{8}$B$_{15}$ , and generates sharp Matteucci voltage by large Barkhausen jump effect even the weak magnetic field. In this study, we don\`t use pick-up coil. Instead, we apply external magnetic field of 3.6Oe in the direction orthogonal to the wire. Then, we detect Matteucci voltage of 1.lmV to both side of 20cm amorphous-wire. Thus, we find that the fabricated wire has the function necessary as the high sensitive sensor material.l.al.l.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.272-275
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• 2019

We investigated the electrical characteristics of amorphous silicon-zinc-tin-oxide (a-SZTO) thin films deposited by RF-magnetron sputtering at room temperature depending on the deposition time. We fabricated a thin film transistor (TFT) with a bottom gate structure and various channel thicknesses. With increasing channel thickness, the threshold voltage shifted negatively from -0.44 V to -2.18 V, the on current ($I_{on}$) and field effect mobility (${\mu}_{FE}$) increased because of increasing carrier concentration. The a-SZTO film was fabricated and analyzed in terms of the contact resistance and channel resistance. In this study, the transmission line method (TLM) was adopted and investigated. With increasing channel thickness, the contact resistance and sheet resistance both decreased.

• Proceedings of the Korean Magnestics Society Conference
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• 1997.05a
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• pp.54-55
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• 1997

• Proceedings of the Korean Magnestics Society Conference
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• 1997.11a
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• pp.74-75
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• 1997

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2005.11a
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• pp.44-44
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 1992.03a
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• pp.14-15
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• 1992

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.172-172
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.96-97
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• 2005