• 한국결정성장학회지
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• 제7권2호
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• pp.259-270
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• 1997

$\alpha-Al_2O_3$와 비정질 $TiO_2$부터 $Al_2TiO_5$를 합성하기 위한 고체상태반응의 반응속도를 $1200~1300^{\circ}C$ 온도 범위에서 연구하였다. 반응속도는 $Al_2O_3$분말을 코팅한 50 mol%의. $TiO_2$와 일정한 온도에서 여러 시간동안 가열하여 생성된 혼합물에 의하여 결정되었다. MgO안의 반응물과 미반응물의 양은 X-선 회절분석에 의하여 결정되었다. $Al_2TiO_5$의 부피율과 peak intensity비의 자료로부터 $Al_2O_3$와 $TiO_2$의 pseudobrookite(Tialite)형태로의 반응은 $1280^{\circ}C$와 $1300^{\circ}C$ 사이에서 시작되었다. 고체상태반응 활성화 에너지는 Arrhenius식에 의하여 결정되었다. 활성화 에너지는 622.4 kJ/mol이다.

• 한국표면공학회지
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• 제34권2호
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• pp.105-114
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• 2001

$Al_2$$O_3$ coatings were deposited on M2 high speed steels by the plasma enhanced chemical vapor deposition (PECVD) process, using a gas mixture of AlC1$_3$, $H_2$, $CO_2$ and Ar $Al_2$$O_3$ coatings had interference color and showed amorphous phase. $A1_2$X$A1_3$/($Ti_{0.5}$ /$Al_{0.5}$ )N double layer coatings were produced in the sequence of substrate $NH_3$ plasma pretreatment, ($Ti_{0.5}$$Al_{0.5}$)N depoition process, $Al_2$$O_3$ deposition process. $Al_2$ $O_3$/( $Ti_{0.5}$A $l_{0.5}$)N double layer coatings showed NaCl structure in ( $Ti_{0.5}$A $l_{0.5}$)N layer and amorphous phase in A1$_2$ $O_3$ layer. It was shown that $Al_2$ $O_3$ columns continuously grew onto ( $Ti_{0.5}$A $l_{0.5}$)N columns. ( $Ti_{0.5}$A $l_{0.5}$)N single coating and $Al_2$ $O_3$/( $Ti_{0.5}$A $l_{0.5}$)N double layer coating were oxidized at $700^{\circ}C$, 80$0^{\circ}C$, 90$0^{\circ}C$ for 1hr, 3hr in atmosphere. At 80$0^{\circ}C$, single layer coatings were oxidized, which were examined substrate oxide particle. But $Al_2$ $O_3$/ ( $Ti_{0.5}$A $l_{0.5}$)N double layer coatings maintained the asdeposited state. Therefore, $Al_2$ $O_3$/ ( $Ti_{0.5}$A $l_{0.5}$)N double layer coatings have moreexcellent oxidation resistance than ( $Ti_{0.5}$A $l_{0.5}$)N single layer coatings.X> 0.5/)N single layer coatings.s.

• 한국재료학회지
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• 제11권12호
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• pp.1080-1085
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• 2001

Dielectric properties and leakage current characteristics of 100 nm-thick $Ta_2O_5/Al_2O_3$multilayer thin films, which were fabricated by reactive sputtering of$Al_2O_3$and$Ta_2O_5$ successively on top of each other for total 9 layers, have been investigated with variation of the$Al_2O_3$content$(i.e,\;Ta_2O_5/Al_2O_3 \;thickness\;ratio)$.$Ta_2O_5/Al_2O_3$films were amorphous regardless of the$Al_2O_3$content. With increasing the$Al_2O_3$content from 0% to 100%, refractive index of the $Ta_2O_5/Al_2O_3$films decreased linearly from 2.03 to 1.56 and dielectric constant was lowered from 23.9 to 7.7 Variation of the dielectric constant with the$Al_2O_3$content was in good agreement with the behavior that was obtained by assuming parallel capacitors of$Al_2O_3$and Ta_2O_5$. Leakage current characteristics of $Ta_2O_5/Al_2O_3$ multilayer films were superior to those of $Ta_2O_5$ and$Al_2O_3$films. $Ta_2O_5/Al_2O_3$ films of 5% and 10%$Al_2O_3$content exhibited excellent leakage current densities which were lower than $10^{-7} A/cm^2$ at 1MV/cm.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.55-55
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• 2018

Recently, amorphous oxides such as InGaZnO (IGZO) and InZnO (IZO) as a channel layer of an oxide TFT have been attracted by advantages such as high mobility, good uniformity, and high transparency. In order to apply such an amorphous oxide TFTs to a display, the stability in various environments must be ensured. In the InGaZnO which has been studied in the past, Ga elements act as a suppressor of oxygen vacancy and result in a decreased mobility at the same time. Previous studies have been showed that the InZnO, which does not contain Ga, can achieve high mobility, but has relatively poor stability under various instability environments. In this study, the TFTs using $IZO/Al_2O_3$ double layer structure were studied. The introduction of an $Al_2O_3$ interlayer between source/drain and channel causes superior electrical characteristics and electrical stability as well as reduced contact resistance with optimally perfect ohmic contact. For the IZO and $Al_2O_3$ bilayer structures, the IZO 30nm IZO channels were prepared at $Ar:O_2=30:1$ by sputtering and the $Al_2O_3$ interlayer were depostied with various thickness by ALD at $150^{\circ}C$. The optimal sample exhibits considerably good TFT performance with $V_{th}$ of -3.3V and field effect mobility of $19.25cm^2/Vs$, and reduced $V_{th}$ shift under positive bias stress stability, compared to conventional IZO TFT. The enhanced TFT performances are closely related to the nice ohmic contact properties coming from the defect passivation of the IZO surface inducing charge traps, and we will provide the detail mechanism and model via electrical analysis and transmission line method.

• 한국세라믹학회지
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• 제24권6호
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• pp.553-560
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• 1987

Amorphous ferrites with composition B2O3-mBaO-nFe2O3 were prepared by an ultra rapidquenching technique. X-ray patterns and SEM reveal the products to be amrophous at room temperature. BaFe12O19 fine particles extracted from amorphous Ba-ferrites which additived Al2O3, SiO2, TiO2 and CoO have narrow size distribution, average 0.2$\mu\textrm{m}$, and coercive force, average 1400 Oe, increased with increasing TiO2 amounts. The obtained BeFe12O19 fine particles would be appreciated as perpendicular magnetic recording media.

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.15-18
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• 2003

Aluminum oxide ($Al_2O_3$) materials were coated conformally on ZnO nanorods by atomic layer deposition (ALD). The ZnO nanorods were first synthesized on a Si(100) substrate from ball-milled ZnO powders by a thermal evaporation procedure. $Al_2O_3$ films were then deposited on these ZnO nanorods by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_2O$). Transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) images of the deposited ZnO nanorods revealed that amorphous $Al_2O_3$ cylindrical shells surround the ZnO nanorods. These TEM images illustrate that ALD has an excellent capability to coat any shape of nanorods conformally.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.117-117
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• 2014

Thin $ZrO_2/Al_2O_3$ films were deposited on a tool steel substrate using Zr and Al cathodes in a cathodic arc plasma deposition system (CAPD), and then oxidized at $600-900^{\circ}C$ in air for up to 50 h. They effectively suppressed the oxidation of the substrate up to $800^{\circ}C$ by acting as a barrier layer against the outward diffusion of the substrate elements and inward diffusion of oxygen. However, rapid oxidation occurred at $900^{\circ}C$ due mainly to the increased diffusion and subsequent oxidation of steel as well as the crystallization of amorphous $Al_2O__3$.

• 한국세라믹학회지
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• 제23권6호
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• pp.71-75
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• 1986

The forming reaction processes of magnesium aluminate spinel by a thermal decomposition of sulfate hydrate were studied with DTA, TG. SEM and X-ray powder diffraction methods. The hydrous salt composed of the mixture of the two compounds of $MgSO_4$ $6H_2O$ and ${AL_2}({SO_4})_17H_2O_3$ in which both sulfates were crystalline. On heating the hydrous slat the crystalline magnesium and aluminum sulfate anhydride to amorphous alumina magnesium sulfate anhydride decomposed to amorphous magnesia and these amorphous oxides reacted completely each other to form a spinel at $1000^{\circ}C$ The apparent activation energy of forming reaction of spinel was 36.5 kcal/mole($900^{\circ}C$~$1000^{\circ}C$) The crystallite size of spinel obtained at $1000^{\circ}C$ after 1 h was 380$\AA$.

• 한국세라믹학회지
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• 제30권12호
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• pp.1045-1053
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• 1993

Alumina hydrates were prepared by the neutralization of AlCl3.6H2O solution with NH3 gas diluted with N2 gas. The values of pH in reaction solution influenced the formation of alumina hydrates minerals. Amorphous alumina hydrates, for example, were formed at ${\gamma}$-Al2O3longrightarrow$\delta$-Al2O3longrightarrow$\theta$-Al2O3longrightarrow$\alpha$-Al2O3. (2) Bayeritelongrightarrowamorphouslongrightarrow${\gamma}$-Al2O3longrightarrow$\delta$-Al2O3longrightarrowη-Al2O3longrightarrow$\theta$-Al2O3longrightarrow$\alpha$-Al2O3. On the other hand, the shape of alumina hydrates whichw ere prepared by the reacton of Al2(SO4)3.16H2O solution and NH3 gas was spherical, the progress of its phase transformation with increasing temperature was amorphouslongrightarrow${\gamma}$-Al2O3longrightarrow$\alpha$Al2O3 in sequence.

• 천문학회지
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• 제49권4호
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• pp.127-136
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• 2016

We investigate optical properties of amorphous alumina (Al2O3) dust grains in the envelopes around O-rich asymptotic giant branch (AGB) stars using laboratory measured optical data. We derive the optical constants of amorphous alumina over a wide wavelength range that satisfy the Kramers-Kronig relation and reproduce the laboratory data. Using the amorphous alumina and silicate dust, we compare the radiative transfer model results with the observed spectral energy distributions. Comparing the theoretical models with observations on various IR two-color diagrams for a large sample of O-rich AGB stars, we find that the amorphous alumina dust (about 10-40%) mixed with amorphous silicate better models the observed points for the O-rich AGB stars with thin dust envelopes.