• Korean Journal of Materials Research
• /
• v.10 no.8
• /
• pp.569-574
• /
• 2000

To improve the ductility of $Al_3Hf$ and $Al_3Ta$ intermetallic compounds, which are the potential temperature structural materials, the mechanical alloying behaviour and the effect of ternary additions on the $Ll_2$ phase formation were investigated. During the mechanical alloying by the SPEX mill, the $Ll_2$ $Al_3Hf$ intermetallic compound was formed after 6 hours of milling in AL-25%Hf system. In AL-25%Ta system, however, only the $D0_{22}$ $Al_3Ta$ intermetallic compound was formed until 30 hours of milling and the $Ll_2$ phase was not observed. In AL-12.5%M-25%Ta(M=Cu, Zn, Mn, Fe, Ni) systems, the additions of Cu and Zn had no effect on the $D0_{22}$ structure of the binary $Al_3Hf$ and the additions of Mn, Fe and Ni produced the amorphous phase. Therefore it was considered that these ternary additions could not overcome the energy difference between $Ll_2$ and $D0_{22}$ structures in the $Al_3Hf$ intermetallic compound. In AL-12.5%M-25%Hf(M=Cu, Zn, Mn, Fe, Ni)systems, the additions of Cu and Zn did not affect the $Ll_2$ structure of the binary $Al_3Hf$ but the additions of oMn, Fe and Ni produced the amorphous phase as they did in AL-12.5%M-25%Ta systems. Therefore, it was considered that the Ni, Mn and Fe additions promote the formation of amorphous phase in $Al_3X$ intermetallic compounds.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.2
• /
• pp.73-76
• /
• 2014

$Pt/Al_2O_3/La_2Si_5O_x/SiO_2/Si$ charge trap memory capacitors were prepared, in which the $La_2Si_5O_x$ film was used as the charge trapping layer, and the effects of post annealing atmospheres ($NH_3$ and $N_2$) on their memory characteristics were investigated. $La_2O_3$ nanocrystallites, as the storage nodes, precipitated from the amorphous $La_2Si_5O_x$ film during rapid thermal annealing. The $NH_3$ annealed memory capacitor showed higher charge storage performances than either the capacitor without annealing or the capacitor annealed in $N_2$. The memory characteristics were enhanced because more nitrogen was incorporated at the $La_2Si_5O_x/SiO_2$ interface and interfacial reaction was suppressed after the $NH_3$ annealing treatment.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.157-157
• /
• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Korean Journal of Soil Science and Fertilizer
• /
• v.17 no.2
• /
• pp.147-154
• /
• 1984

Two Fe-hydrous oxide A,B and one Al-hydroxide minerals were synthesized precipitating Fe $Cl_3$ and $AlCl_3$ with alkali solution(NaOH) at pH 6.0, 12.0 and 4.5 respectively, for precise understanding of physico-chemical and surface charge characteristics of soils in which these minerals are dominant. Identification of these final products, effect of free and amorphous materials on X-ray diffraction analysis, particle size distribution and surface change characterics of these minerals were performed. Fe-hydroxide A and B were identified as great deal of X-ray amorphous material and as goethite with large amount of X-ray amorphous material, respectively. Dehydration by oven at $105^{\circ}C$ of these minerals exhibited akaganeite peaks with low X-ray amorphous hump and pure goethite peaks for Fe-hydroxide A and B, respectively. Both minerals, however, turned into hematite upon firing at $550^{\circ}C$. On the other hand, Al-hydroxide identified as mixture of gibbsite and bayerite of around 7:3 ratio. Application of sodium dithionite and ammonium oxalate solutions for removal of free or amorphous Fe and Al from these minerals revealed that only peak intensities of Al-hydroxide system were enhanced upon Al-extraction by oxalate solution even though dithionite solution was much powerful to extract Fe from Fe-hydrous oxide systems. Original(wet) Fe-hydrous oxide A has the highest specific surface and surface charge development(negative and positive), and the greatest amount of less than $2{\mu}m$ sized particles. Specific surface and clay sized particles(less than $2{\mu}m$) of Fe-hydrous oxide A, however, were drastically reduced upon dehydration($P_2O_5$ and oven drying) compare to the rest minerals. The Z.P.C. of these synthetic minerals were 8.0-8.5, 7.5-8.0 and 5.5-6.0 for Fe-hydrous oxide A, B and Al-hydroxide, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.6
• /
• pp.34-42
• /
• 2000

Recently, there is a growing need to develope small-size RF chip inductors operating to GHz to realize high-performance, micro-fabricated wireless communication products. For the development of high-performance RF chip inductors, however, the ferrite-based chip inductors can not be used above 300MHz due to the limitation of the permeability of this material. In this work, small-size, high-performance RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. Copper (Cu) with 40${\mu}m$ diameter was used as the coils and the chip inductor size fabricated in this work is $2.1mm{\times}1.5mm{\times}1.0mm$. The external current source was applied after bonding Cu coil leads to gold pads electro-plated on the bottom edges of a core material. The composition of core materials was measured using a EDX. High frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The developed inductors have the self-resonant frequency (SRF) of 1 to 3.5 GHz and exhibit L of 22 to 150 nH. The L of the inductors decreases with increasing the SRF. The Z of the inductors has the maximum value at the SRF and the inductors have the quality factor of 70 to 97 in the frequency range of 500 MHz to 1.5 GHz.

• Korean Journal of Metals and Materials
• /
• v.49 no.4
• /
• pp.281-290
• /
• 2011

In order to gain better understanding of the selective surface oxidation and its influence on the galvanizability of a transformation-induced plasticity (TRIP) assisted steel containing 1.5 wt.% Si and 1.6 wt.% Mn, a model experiment has been carried out by depositing Si and Mn (each with a nominal thickness of 10 nm) in either monolayers or bilayers on a low-alloy interstitial-free (IF) steel sheet. After intercritical annealing at $800^{\circ}C$ in a $N_2$ ambient with a dew point of $-40^{\circ}C$, the surface scale formed on 590 MPa TRIP steel exhibited a microstructure similar to that of the scale formed on the Mn/Si bilayer-coated IF steel, consisting of $Mn_{2}SiO_{4}$ particles embedded in an amorphous $SiO_{2}$ film. The present study results indicated that, during the intercritical annealing process of 590 MPa TRIP steel, surface segregation of Si occurs first to form an amorphous $SiO_{2}$ film, which in turn accelerates the out-diffusion of Mn to form more stable Mn-Si oxide particles on the steel surface. During hot-dip galvanizing, particulate $Fe_{3}O_{4}$, MnO, and Si-Mn oxides were reduced more readily by Al in a Zn bath than the amorphous $SiO_{2}$ film. Therefore, in order to improve the galvanizability of 590 TRIP steel, it is most desirable to minimize the surface segregation of Si during the intercritical annealing process.

• Journal of the Korean Ceramic Society
• /
• v.41 no.1
• /
• pp.51-56
• /
• 2004

Mullite whiskers were synthesized using $Al(OH)_3$, amorphous $SiO_2$ and $AIF_3$ as starting materials by a vapor-solid reaction at relatively low temperature of $1100^{\circ}C$. Leaflet Fluorotopaz was observed for the specimen heat-treated at $800^{\circ}C$. Fluorotopaz was decomposed at $1000^{\circ}C$ and only mullite phase was observed for the specimen sintered at $1100^{\circ}C$ and above. It was found that the synthesized mullite at $1200^{\circ}C$ had grown to [001] direction and side planes were the {110}. The distance of (110} plane was $5.34^{\AA}C$. The amounts of $Al_2O_3$ in mullite was 73.56(1.39)wt%.

• Journal of the Korean institute of surface engineering
• /
• v.30 no.3
• /
• pp.183-190
• /
• 1997

Fabrication and crystallization characteristics of yttria($T_2O_3$) stabilized zirconia(YSZ) thin film by sol-gel process were studied. YSZ sol was synthesized with zirconium n-propoxide($Zr(OC_3H_7)_4)$) and yttrium nitrate pentahydrate ($Y(NO_3)_3.5H_2O$). YSZ film was prepared by depositing the polymeric sol on porous $Al_2O_3$ substrate by spin-coating, and the film characteristics were investigated by FRIR, TG-DTA, XRD, DSC, optical microscopy and SEM. The film topology was uniform and cracks were not found. It was found that the annealing temperature and the concentration of stabilizer affect the crystallization of YSZ film. The YSZ film began to crystallize from amorphous to tetragonal phase at 40$0^{\circ}C$, and it was not converted to cubic structure until $1100^{\circ}C$. It seemed that the grains were formed over $700^{\circ}C$and the average grain size was obtained about 0.2$\mu\textrm{m}$.

• Journal of information and communication convergence engineering
• /
• v.1 no.1
• /
• pp.23-26
• /
• 2003

A photodiode capable of obtaining a sufficient photo/dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. Growth of high quality alumina($Al_{2}O_{3}$) film using anodizing technology is proposed and analyzed by experiment. We have obtained the film with a superior characteristics

• Korean Journal of Metals and Materials
• /
• v.50 no.8
• /
• pp.575-582
• /
• 2012

Medium carbon steel was aluminized by hot dipping into molten Al or Al-1 at% Si baths. After hot-dipping in these baths, a thin Al-rich topcoat and a thick alloy layer rich in $Al_5Fe_2$ formed on the surface. A small amount of FeAl and $Al_3Fe$ was incorporated in the alloy layer. Silicon from the Al-1 at% Si bath was uniformly distributed throughout the entire coating. The hot dipping increased the microhardness of the steel by about 8 times. Heating at $700-1000^{\circ}C$, however, decreased the microhardness through interdiffusion between the coating and the substrate. The oxidation at $700-1000^{\circ}C$ in air formed a thin protective ${\alpha}-Al_2O_3$ layer, which provided good oxidation resistance. Silicon was oxidized to amorphous silica, exhibiting a glassy oxide surface.