• Ceramist
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• v.14 no.5
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• pp.43-50
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• 2011

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2008.11a
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• pp.13.2-13.2
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• 2008

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.2
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• pp.58-61
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• 2016

Bulk GaN crystals were grown by the basic ammonothermal method. The c-plane GaN templates grown by hydride vapor phase epitaxy were used as seed crystals and sodium metal, amide, and azide were added as a mineralizer. The growth conditions are at temperatures from $500{\sim}600^{\circ}C$ and pressures from 2~3 kbar. The growth rate for the c-axis was increased with increasing the operating pressure. Average dislocation density was measured $1{\times}10^5/cm^2$ by the cathodoluminescence measurement. The full-width at half-maximum of the X-ray diffraction rocking curve for (002) reflection was approximately 270 arcsec for Ga face and 80 arcsec for N face.