• Geotechnical Engineering
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• v.2 no.3
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• pp.5-14
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• 1986

The results of stabilization process in silty.clays and sand-silts, which were, respectively, treated with Calcium hydroxide of the Calcium series and Aluminium Sulphate of the Aluminium series are follows. 1) In the former case used calcium hydrate and calcium cabonate for silty-clays, calcium aluminnium cabonate oxide hydrate and calcium carbonate for sandy-silts were produced 2) In the latter case used Aluminium Sulphate, by X-ray diffraction test, it was found that Aluminium Oxide was produced both in silty-clays and sandy-silts 3) As the results of stabilization process, in the former case, unconfined compression strength was increased greatly but in the latter case it was little increased.

• Journal of the Korean institute of surface engineering
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• v.12 no.3
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• pp.167-173
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• 1979

The structure of anodic aluminium oxide films formed in 2% oxalic asid at constant temperature was studied by the oid of the transmission and replica electron microscopy. Far the initial stage of oxidations, it is observed that pores are initiated from lattice defects as subgrain boundaries, and then spread radially. Some pores merge each other and the others cease to grow until the current density reaches to the steady state. The pore diameter and the cell size are proportional to the anodizing voltages, and it is considered that the pore initiation and growth are largely controlled by the field - assisted oxide dissolution.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

• Journal of Power System Engineering
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• v.18 no.6
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• pp.166-173
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• 2014

In this study, a laminated composite material with dispersing aluminum oxide powder between the CFRP laminate plies, and also CFRP composites without aluminium oxide powder were fabricated for Mode I experiments using the DCB specimen and a tensile test. The behavior of the crack and the change of the interfacial fracture toughness were evaluated. Also in order to evaluate the damage mechanism for the crack extension, the AE sensor on the surface of the DCB test specimen was attached. AE amplitude was estimated for CFRP-alumina and CFRP composite. And the fracture toughness was evaluated by the stress intensity factor and energy release rate. The results showed that an unstable crack was propagated rapidly in CFRP composite specimen along with the interface, but crack propagation in CFRP-alumina specimen was relatively stable. From results, we show that aluminium oxide powder spreaded uniformly in the interface of the CFRP laminate carried out the role for preventing the sudden crack growth.

• The Journal of Advanced Prosthodontics
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• v.8 no.6
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• pp.423-432
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• 2016

PURPOSE. The aim of this work is to evaluate different types of materials used for making implant abutments, by means of an in vitro study and a review of the literature, in order to identify the indications for a better choice of an implant-supported restoration in the anterior section. MATERIALS AND METHODS. 5 implant abutments were tested in a random order in the superior anterior maxilla of pig gingiva (n = 8): titanium dioxide (Nobel Biocare); zirconium dioxide, Standard BO shade (Nobel Biocare, Kloten, Switzerland); zirconium dioxide, Light BI shade (Nobel Biocare); zirconium dioxide, Intense A 3.5 shade (Nobel Biocare); and aluminium oxide. Each abutment was tested for 2 mm and 3 mm thickness. To determine color variation, VITA Easyshade Advance spectrophotometer (Vita Zahnfabrik, Bad Sackingen, Germany) was used. RESULTS. Results showed that the color variation induced by the abutment would be affected by the abutment material and gingival thickness, when the gingival thickness is 2 mm. All materials except zirconium dioxide (Standard shade) caused a visible change of color. Then, as the thickness of the gingiva increased to 3 mm, the color variation was attenuated in a significant manner and became invisible for all types of abutments, except those made of aluminium oxide. CONCLUSION. Zirconium dioxide is the material causing the lowest color variation at 2 mm and at 3 mm, whereas aluminium oxide causes the highest color variation no matter the thickness.

• Analytical Science and Technology
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• v.7 no.2
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• pp.155-164
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• 1994

A conventional Grimm-type glow discharge source was constructed and applied to radio-frequency(13.56MHz) discharge for metal and ceramic analysis. We investigated the emission spectrum for aluminium and aluminium oxide and the influence of discharge operating paramaters including argon pressure, rf-power and DC-bias voltages at the sample-side electrode. Scanning Electron Microscope(SEM) also was used to investigate the effect of rf-sputtering on the microstructure formation of the aluminium oxide. Linear analytical calibration curves were constructed for Manganese and zinc element in samples of low alloy steel(BAS 401-405) and brass(NIST 1108-1117).

• Journal of Adhesion and Interface
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• v.4 no.2
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• pp.21-29
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• 2003

Hot AC anodising has been evaluated us pre-treatment for aluminium prior to structural adhesive bonding. Phosphoric and sulphuric acid hot AC anodising showed very promising adhesion promoter capabilities with durability comparable with the best standard DC anodising procedures. AC anodising does not required etching prior to anodising and offers u pre-treatment time down to 20 seconds. The interface/interphase between the aluminium substrate and the adhesive was investigated in order to get a better understanding of the involved adhesion mechanisms and to explain the long-tenn properties. The alkaline medium formed at the oxide layer/adhesive interface has been shown to induce a partial dissolution of the oxide layer leading to the formation of metallic ions which diffuse in the adhesive (EPMA measurements). The effect of diffusion of the Al ions on adhesion and joint durability is still uncertain but studies showed that pre-bond moisture affected the joints durability and to some extent the diffusion length. specially for DC anodised samples. So far no direct correlation could be established between the diffusion length d and the joints durability but new trials with better control over the elapsed time between bonding and adhesive curing are expected to help getting a better understanding of the involved mechanisms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.338-339
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• 2005

The wider surface of the aluminum foil, electrochemically very important and it is necessary to increase the surface area. A study has been made of the fabrication condition for etching cube texture of high purity aluminium foil and of electrochemical etching of the aluminium foil. In the present work, it is shown there exists a relation between the influence of the pre-treatment time in the NaOH & HCI solution and $H_2SO_4$ concentration in the conversion solution. Also effect of temperature during AC etching was also studied. Result of the etched aluminum film is shown in the typical SEM images. Its electrochemical characteristics were investigated by cyclic voltammetry. And effects of current density and frequency is also reported. Cyclic voltammogram showed that the protective oxide film was formedon the inner surfaces of etch pit. the frequency influence resistance of oxide film in AC etching.

• Earthquakes and Structures
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• v.15 no.3
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• pp.285-294
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• 2018

In this study, nonlinear dynamic response of a concrete plate retrofit with Aluminium oxide ($Al_2O_3$) under seismic load and magnetic field is investigated. The plate is a composite reinforced by Aluminium oxide with characteristics of the equivalent composite being determined using Mori-Tanka model considering agglomeration effect. The plate is simulated with higher order shear deformation plate model. Employing nonlinear strains-displacements, stress-strain, the energy equations of column was obtained and using Hamilton's principal, the governing equations were derived. Differential quadrature method (DQM) in conjunction with Newark method is applied for obtaining the dynamic response of structure. The influences of magnetic field, volume percent of nanoparticles, geometrical parameters of column, agglomeration and boundary conditions on the dynamic response were investigated. Results showed that with increasing volume percent of nanoparticles, the dynamic deflection decreases.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.31 no.9
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• pp.74-81
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• 1982

One of the stable thin film transistor fabricated by cadmium suifide with the anodized aluminium oxide as gate material. The principle of the operation for the device is based on the control mechanism of injected majority carricrs to the wide band gap semiconductor, that is cadmium sulfide, by means of the function of the gate control. The fabricated device constructed by evaporating CdS layer in the form of microcrystalline on the oxided thin film characterized by ea, 80 as voltage amplification factor, 1/100 mho as transconductance, 8 kohm as dynamic output resistance, furthermore gain band width products is about 15 MHz.