• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.55-61
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• 2002

Ultra-fine particles of $SnO_{2}$ was synthersized by the sol-gel powder processing using tin(II) chloride dihydrate$(SnCl_{2}{\cdot}2H_{2}O)$ and ethanol$(C_{2}H_{5}OH)$ as raw materials. Gel powders can be obtained by drying of sol at $120^{\circ}C$ after aging 72hrs and 168hrs. The amount of $SnO_{2}$ phase was increased with temperature because of the evaporation of volatile components, and the creation of $SnO_{2}$ phase was almost done by the heat treatment at $700^{\circ}C/30min$ The grain sizes after firing are about 20-30nm, and it showed the narrow distribution of grain size. The specimens to measure electrical properties were fabricated by the thick film screen printing technique on the alumina substrates. The conductance of $SnO_{2}$ was increased with temperature up to $380^{\circ}C$ by the typical conduction mechanism of semiconducting ceramics. There was a region of constant conductance between about $200^{\circ}C$ and $380^{\circ}C$ due to the increment of electron concentration with temperature and the annihilation of conduction carriers by the absorption and electron trapped-ionization of oxygen on the surface of $SnO_{2}$, It was finally showed the intrinsic behaviors above $450^{\circ}C$. The sensing properties of response time, recovery, and sensitivity of CO were improved with aging time.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.1
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• pp.69-74
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• 2006

Thick film $H_2$ sensors were fabricated using $SnO_2$ loaded with $Ag_2O$ and $PtO_x$. The composition that gave the highest sensitivity for $H_2$ was in the weight% ratio of $SnO_2 : PtO_x : Ag_2O$ as 93 : 1 : 6. The nano-crystalline powders of $SnO_2$ synthesized by sol-gel method were screen printed with $Ag_2O$ and $PtO_x$ on alumina substrates. The fabricated sensors were tested against gases like $H_2$, $CH_4$, $C_3H_8$, $C_2H_5OH$ and $SO_2$. The composite material was found sensitive against $H_2$ at the working temperature $130^{\circ}C$, with minor interference of other gases. The $H_2$ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on $SnO_2-Ag_2O-PtO_x$ system exhibited the high performance, high selectivity and very short response time to $H_2$ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of $H_2$.

• Journal of Sensor Science and Technology
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• v.16 no.1
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• pp.7-10
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• 2007

A thick film catalytic gas sensors which can be operated at $142^{\circ}C$ in presence of ultra violet-light emitting diode has been developed to measure hydrogen concentration in 0-5 % range. The sensing material as a combustion catalyst consists of $TiO_{2}$ (5 wt%) and Pd/Pt (20 wt%) supported on $Al_{2}O_{3}$ powder and the reference material to compensate the heat capacity of it in a bridge circuit was an catalyst free $Al_{2}O_{3}$ powder. Platinum heater and sensor materials were formed on the alumina plate by screen printing method and heat treatment. The effect of UV radiation in the presence of photo catalyst $TiO_{2}$ on the sensor sensitivity, response and recovery time has been investigated. The reduction of operating temperature from $192^{\circ}C$ to $142^{\circ}C$ for hydrogen gas sensing property in presence of UV radiation is attributed to the hydroxy radical and superoxide which was formed at the surface of $TiO_{2}$ under UV radiation.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.1-6
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• 2004

The requirements for harsh environment electronic controllers in automotive applications have been steadily becoming more and more stringent. Electronic substrate technologists have been responding to this challenge effectively in an effort to meet the performance, reliability and cost requirements. An effect of the plasma cleaning at the ECM(Engine Control Module) alumina substrate and the intermetallic compound layer between Sn-37wt%Pb solder and pad joints after reflow soldering has been studied. Organic residual carbon layer was removed by the substrate plasma cleaning. So the interfacial adhesive strength was enhanced. As a result of AFM measurement, conductor pad roughness were increased from 304 nm to 330 nm. $Cu_6/Sn_5$ formed during initial reflow process at the interface between TiWN/Cu pad and solder grew by the succeeding reflow process, so the grains became coarse. A cellular-shaped $Ag_3Sn$ was observed at the interface between Ag-Pd conductor pad and solder. The diameters of the $Ag_3Sn$ grains ranged from about 0.1∼0.6 $\mu\textrm{m}$. And a needle-shaped was also observed at the inside of the solder.

• Korean Journal of Materials Research
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• v.23 no.4
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• pp.211-214
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• 2013

The effects of a Ni coating on the sensing properties of nano ZnO:Ni based gas sensors were studied for $CH_4$ and $CH_3CH_2CH_3$ gases. Nano ZnO sensing materials were prepared by the hydrothermal reaction method. The Ni coatings on the nano ZnO surface were deposited by the hydrolysis of zinc chloride with $NH_4OH$. The weight % of Ni coating on the ZnO surface ranged from 0 to 10 %. The nano ZnO:Ni gas sensors were fabricated by a screen printing method on alumina substrates. The structural and morphological properties of the nano ZnO : Ni sensing materials were investigated by XRD, EDS, and SEM. The XRD patterns showed that nano ZnO : Ni powders with a wurtzite structure were grown with (1 0 0), (0 0 2), and (1 0 1) dominant peaks. The particle size of nano ZnO powders was about 250 nm. The sensitivity of nano ZnO:Ni based sensors for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas was measured at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity of the ZnO:Ni sensor to $CH_4$ gas and $CH_3CH_2CH_3$ gas was observed at Ni 4 wt%. The response and recovery times of 4 wt% Ni coated ZnO:Ni gas sensors were 14 s and 15 s, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1217-1223
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• 2003

Nerve gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas is dimethyl methyl phosphonate(C$_3$ $H_{9}$ $O_3$P, DMMP) that is simulant gas of nerve gas. Sensing materials were Sn $O_2$ added a-Al$_2$ $O_3$ with 0∼20wt.% and were physically mixed each material. They were deposited by screen printing method on alumina substrate. The sensor device was consisted of sensing electrode with interdigit(IDT) type in front and a heater in back side. Total size of device was 7${\times}$10${\times}$0.6㎣. Crystallite size & phase identification and morphology of fabricated Sn $O_2$ powders were analyzed by X-ray diffraction and by a scanning electron microscope, respectively. Fabricated sensor was measured as flow type and resistance change of sensing material was monitored as real time using LabVIEW program. The best sensitivity was 75% at adding 4wt.% $\alpha$-Al$_2$ $O_3$, operating temperature 30$0^{\circ}C$ to DMMP 0.5ppm. Response and recovery time were about 1 and 3min., respectively. Repetition measurement was very good with $\pm$3％ in full scale.TEX>$\pm$3％ in full scale.

• Journal of Sensor Science and Technology
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• v.5 no.6
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• pp.7-14
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• 1996

In order to develop gas sensor operating at low temperature, thick film $Co_{3}O_{4}$ sensor was fabricated. $Co_{3}O_{4}$ powder was prepared by precipitation from cobalt nitrate solution and the powders containing ethylene glycol as a binder was screen-printed on alumina substrate. Characteristics of sensitivity, response time, and recovery were investigated in terms of binder content and heat treating conditions. The $Co_{3}O_{4}$ sensor contained 15% ethylene glycol and heat-treated at $300^{\circ}C$ for 24hr showed the highest sensitivity at the operating temperature of $250^{\circ}C$. Its sensitivity of 1.1 to 5000ppm butane gas was very high, as compared with $0.8{\sim}0.85$ at the operating temperature of $350{\sim}400^{\circ}C$ for a commercial $SnO_{2}$ gas sensor. It is found that response time was fast, but recovery was poor for the sensor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.796-805
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• 2000

A 30GHz band low noise amplifier module, which has linear gain of 30dB and noise figure of 2.6dB, for 30GHz satellite communication transponder was developed by use of MMIC and thin film MIC technologies. Two kinds of MMIC circuits were used for the low noise amplifier module, the first one is ultra low noise MMIC circuit and the other is wideband and high gain MMIC circuit. The pHEMT technology with 0.15$mu extrm{m}$ of gate length was applied for MMIC fabrication. Thin film microstrip lines on alumina substrate were used to interconnect two MMIC chips, and the thick film bias circuit board were developed to provide the stabilized DC bias. The input interface of the low noise amplifier module was designed with waveguide type to receive the signal from antenna directly, and the output port was adopted with K-type coaxial connector for interface with the frequency converter module behind the low noise amplifier module. Space qualified manufacturing processes were applied to manufacture and assemble the low noise amplifier module, and space qualification level of environment tests including thermal and vibration test were performed for it. The developed low noise amplifier was measured to show 30dB of minimum gain, $\pm$0.3dB of gain flatness, and 2.6dB of maximum noise figure over the desired operating frequency range from 30 to 31 GHz.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.327-334
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• 2002

Fine particles of $SnO_2$ were fabricated by the sol-gel powder processing using tine(II) chloride dihydrate($SnCl_2{\cdot}2H_2O$) and ethanol($C_2H_5OH$) as raw materials. The powders were investigated about the properties and electrical sensing. Gel powders were fabricated by drying of sol at $120^{\circ}C$ after aging 72hrs and 168hrs. The amount of $SnO_2$ phase was increased below $600^{\circ}C$ due to the elimination of volatile components, and the $SnO_2$ phase was almost completed by the heat treatment at $700^{\circ}C$ for 30min. The grain sizes were about 30nm below $700^{\circ}C$, and it showed the narrow distribution of the grain sizes. The specimens to measure electrical properties were fabricated by the thick film screen printing technique on the alumina substrates. The conductance of $SnO_2$ was showed the intrinsic behaviour of semiconducting ceramics above at $450^{\circ}C$. The constant conductance was observed in the temperature range of $200{\sim}450^{\circ}C$. The sensing properties of response time, recovery, and sensitivity of CO were improved with aging time.