• 제목/요약/키워드: air stable n-dopant

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Highly efficient, long living white PIN-OLEDs for AM displays

  • Murano, Sven;Vehse, Martin;He, Gufeng;Birnstock, Jan;Hofmann, Michael
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.239-244
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    • 2007
  • Highly efficient and stable white PIN OLED structures have been developed with a focus on possible AM display applications. Due to the use of the novel air-stable Novaled n-dopant material NDN26, the mass production compatibility of the PIN approach is improved. With both a conventional n-dopant, NDN1, and a novel air-stable n-dopant, NDN26, similar performance in efficiency and lifetime are reached. Based on highly a stable red fluorescent emitter system, the Novaled PIN approach allows for reaching ultra-long lifetimes of 1,000,000 hours at a brightness of $1,000\;cd/m^2$, both for top and for bottom emission layouts. Furthermore, inverted PIN structures for a possible use in a-Si backplane applications for AM displays are shown. With a phosphorescent green emitter system it could be demonstrated that for bottom and inverted as well as non-inverted top emission, a brightness of $1,000\;cd/m^2$ can be reached at below 3 V. In addition to low operating voltages and long lifetimes, PIN OLEDs also enable for device structures with extremely low operating voltage drifts, a feature of increasing importance for future AM display developments.

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$CsN_3$ as an air stable and low temperature evaporable novel n doping material for high efficiency and low driving voltage in organic light-emitting diodes

  • Lee, Jun-Yeob;Yook, Kyoung-Soo;Jeon, Soon-Ok;Joo, Chul-Woong;Lee, Tae-Woo;Noh, Tae-Yong;Yang, Haa-Jin;Kang, Sung-Kee
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1319-1322
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    • 2008
  • $CsN_3$ was developed as a novel n doping material with air stability and low deposition temperature. Evaporation temperature of $CsN_3$ was similar to that of common hole injection material and it worked well as a n dopant in electron transport layer. Driving voltage was lowered and high power efficiency was obtained in green phosphorescent devices by using $CsN_3$ as a dopant in electron transport layer. It could also be used as a charge generation layer in combination with $MoO_3$. In addition, n doping mechanism study revealed that $CsN_3$ is decomposed into Cs and $N_2$ during evaporation. This is the first work reporting air stable and low temperature evaporable n dopant in organic light-emitting diodes.

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Positive Charge-doping on Carbon Nanotube Walls and Anion-directed Tunable Dispersion of the Derivatives

  • Shin, Ueon-Sang;Knowles, Jonathan C.;Kim, Hae-Won
    • Bulletin of the Korean Chemical Society
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    • 제32권5호
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    • pp.1635-1639
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    • 2011
  • An efficient and novel positive charge-doping on the sidewalls of multi-walled carbon nanotubes has been achieved in the presence of tetrahydrofuran as a dopant and Lewis acidic ionic liquids, [bmim]$Sb_nF_{5n+1}$ (n ${\geq}$ 2; bmim = 1-butyl-3-methylimidazolium), as an activator, leaving air-stable derivatives having positively charged sidewalls and the counter anions, [MWCNT$^{y+}$][SbF$_6^-$]$_y$ (MWCNT = multi-walled carbon nanotube). The derivatization took place very fast in one-pot and under mild reaction conditions. The ionic structure enabled a tunable dissolution of the derivatives in various solvents through anion exchange.