• Journal of Advanced Marine Engineering and Technology
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• v.40 no.2
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• pp.96-101
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• 2016

The thermal management of high-power LED components in an assembly structure is crucial for the stable operation and proper luminous function. This study employs numerical tools to determine the optimum thermal design in LEDs with a heat sink consisting of a crevice-type vapor-chamber heat pipe. The effects of the MCPCB are investigated in terms of the substrate thicknesses on which the LEDs are mounted. Further, different placement configurations in a system module are considered. This study found that for a confined area, a power of 40 W/LED is applicable to a high-power package. Furthermore, the thermal conductivity of dielectric layer materials should ideally be greater than 0.9 W/m.K. The temperature conditions of the vapor chamber in a heat pipe greatly affect the thermal performance of the system. At an offset distance of 9.0 mm and a $2^{\circ}C$ increase in the temperature of the heat pipe, the resulting maximum temperature increase is approximately $1.9^{\circ}C$ for each heat dissipation temperature. Finally, at a thermal conductivity of 0.3 W/m.K, it was found that the total thermal resistance changes dramatically. Above 1.2 W/m.K, the resistance change reduces exponentially.

• Journal of Mechanical Science and Technology
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• v.19 no.6
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• pp.1338-1346
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• 2005

Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.

• Nuclear Engineering and Technology
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• v.47 no.4
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• pp.434-442
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• 2015

The advanced passive pressurized water reactor (PWR) is being constructed in China and the passive residual heat removal (PRHR) system was designed to remove the decay heat. During accident scenarios with increase of heat removal from the primary coolant system, the actuation of the PRHR will enhance the cooldown of the primary coolant system. There is a risk of power excursion during the cooldown of the primary coolant system. Therefore, it is necessary to analyze the thermal hydraulic behavior of the reactor coolant system (RCS) at this condition. The advanced passive PWR model, including major components in the RCS, is built by SCDAP/RELAP5 code. The thermal hydraulic behavior of the core is studied for two typical accident sequences with PRHR actuation to investigate the core cooling capability with conservative assumptions, a main steam line break (MSLB) event and inadvertent opening of a steam generator (SG) safety valve event. The results show that the core is ultimately shut down by the boric acid solution delivered by Core Makeup Tank (CMT) injections. The effects of CMT boric acid concentration and the activation delay time on accident consequences are analyzed for MSLB, which shows that there is no consequential damage to the fuel or reactor coolant system in the selected conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.116-117
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• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• Journal of Welding and Joining
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• v.31 no.6
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• pp.77-83
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• 2013

3D packaging technology using TSV (Through Silicon Via)has been studied in the recent years to achieve higher performance, lower power consumption and smaller package size because electrical line is shorter electrical resistivity than any other packaging technology. To stack TSV chips vertically, reliable and robust bonding technology is required because mechanical stress and thermal stress cause fracture during the bonding process. Cu pillar/solder ${\mu}$-bump bonding process is usually to interconnect TSV chips vertically although it has weak shape to mechanical stress and thermal stress. In this study, we suggest Insert-Bump (ISB) bonding process newly to stack TSV chips. Through experiments, we tried to find optimal bonding conditions such as bonding temperature and bonding pressure. After ISB bonding, we observed microstructure of bump joint by SEM and then evaluated properties of bump joint by die shear test.

• Nuclear Engineering and Technology
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• v.54 no.5
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• pp.1874-1889
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• 2022

In this study, we evaluate the thermal-hydraulic performance and economics of Printed Circuit Heat Exchanger (PCHE) according to the channel types and associated shape variables for the design of recuperators with Sodium-cooled Fast Reactors (SFRs). To perform the evaluations with variables such as the Reynolds number, channel types, tube diameter, and shape variables, a code for the heat exchanger is developed and verified through a comparison with experimental results. Based on the code, the volume and pressure drop are calculated, and an economic assessment is conducted. The zigzag type, which has bending angle of 80° and a tube diameter of 1.9 mm, is the most economical channel type in a SFR using CO₂ as the working fluid. For a SFR using N₂, we recommend the airfoil type with vertical and horizontal numbers of 1.6 and 1.1, respectively. The airfoil type is superior when the mass flow rate is large because the operating cost changes significantly. When the mass flow rate is small, volume is a more important design parameter, therefore, the zigzag type is suitable. In addition, we conduct a sensitivity analysis based on the production cost of the PCHE to identify changes in optimal channel types.

• Journal of Surface Science and Engineering
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• v.56 no.1
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• pp.55-61
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• 2023

As a preliminary study to produce functional nanocomposites in a heat dissipation device, we performed the direct synthesis of carbon nanotubes (CNTs) on the surface of alumina (Al₂O₃) powders. A thermal chemical vapor deposition (TCVD) system was used to grow CNTs directly on the Al₂O₃ surface. In order to investigate the growth behavior of CNTs, we varied both furnace temperature of the TCVD ranging from 700 to 850 ℃ and concentration of the ferritin-dissolved DI solution from 0.1 to 2.0 mg/mL. From the previous results, the gas composition and duration time for CNT growth were fixed as C₂H₄ : H₂ = 30 : 500 (vol. %) and 10 min, respectively. Based on the analysis results, the optimized growth temperature and ferritin concentration were found to be 825 ℃ and 0.5 mg/mL, respectively. The obtained results could be adopted to achieve mass production of nanocomposites with heat dissipation functionality.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• Nuclear Engineering and Technology
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• v.51 no.2
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• pp.402-409
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• 2019

When a loss of coolant accident (LOCA) occurs in a nuclear power plant, accident scenarios which can prevent core damage are defined based on break size. Current probabilistic safety assessment evaluates that core damage can be prevented under small-break LOCA (SBLOCA) and steam generator tube rupture (SGTR) with rapid cool down (RCD) strategy when all safety injection systems are unavailable. However, previous research has pointed out a limitation of RCD in terms of initiation time. Therefore, RCD success criteria estimation based on allowable coping time under a SBLOCA or SGTR when all safety injection systems are unavailable was performed based on time-line and thermal-hydraulic analyses. The time line analysis assumed a single emergency operating procedure flow, and the thermal hydraulic analysis utilized MARS-KS code with variables of break size, cooling rate, and operator allowable time. Results show while RCD is possible under SGTR, it is impossible under SBLOCA at the APR1400's current cooling rate limitation of 55 K/hr. A success criteria map for RCD under SBLOCA is suggested without cooling rate limitation.

• Journal of the Korean Institute of Gas
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• v.23 no.4
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• pp.74-79
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• 2019

Specially designed test material was used for workpiece temperature measurement in the commercial reheating furnace and a linearized thermal model was applied for real time temperature prediction. The applied furnace is a walking beam type and specification of the workpiece is a STS302 which is 160mm in width, 160mm in height and 8100mm in length. Also six thermocouples were installed in width, height and length direction for temperature measurement. Ambient temperature in the furnace was raised to 1265 Celsius degrees and it took about 2.5 hours from loading to discharging of the workpiece. As a result of the experiment, temperature of the workpiece at discharge was 1257 Celsius degrees on the average in the range of 1256 to 1259 Celsius degrees, and predicted average temperature through the thermal model was 1251 Celsius degrees. Therefore, the deviation of the analysis and test results is about 6 degrees, which is within the range of 10 degrees required by the industry.