• Journal of Ceramic Processing Research
• /
• v.19 no.5
• /
• pp.439-443
• /
• 2018

The outstanding characteristics of high quality GaN single crystal substrates make it possible to apply the manufacture of high brightness light emitting diodes and power devices. However, it is very difficult to obtain high quality GaN substrate because the process conditions are hard to control. In order to effectively control the formation of GaN polycrystals during the bulk GaN single crystal growth by the HVPE (hydride vapor phase epitaxy) method, a quartz ring was introduced in the edge of substrate. A variety of evaluating method such as high resolution X-ray diffraction, Raman spectroscopy and photoluminescence was used in order to measure the effectiveness of the quartz ring. A secondary ion mass spectroscopy was also used for evaluating the variations of impurity concentration in the resulting GaN single crystal. Through the detailed investigations, we could confirm that the introduction of a quartz ring during the GaN single crystal growth process using HVPE is a very effective strategy to obtain a high quality GaN single crystal.

• Journal of Ceramic Processing Research
• /
• v.13 no.spc2
• /
• pp.394-397
• /
• 2012

In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

• Journal of Powder Materials
• /
• v.22 no.1
• /
• pp.27-31
• /
• 2015

Flat panel display devices are mainly used as information display devices in the 21st century. The worldwide waste flat panel displays are expected at 2-3 million units but most of them are land-filled for want of a proper recycling technology More specifically, rare earth metals of La and Eu are used as fluorescent materials of Cold Cathode Flourscent Lamp(CCFL)s in the waste flat panel displays and they are critically vulnerable and irreplaceable strategic mineral resources. At present, most of the waste CCFLs are disposed of by land-filling and incineration and proper recovery of 80-plus tons per annum of the rare earth fluorescent materials will significantly contribute to steady supply of them. A dearth of Korean domestic research results on recovery and recycling of rare earth elements in the CCFLs prompts to initiate this status report on overseas research trends and noteworthy research results in related fields.

• Journal of the Korean institute of surface engineering
• /
• v.50 no.2
• /
• pp.114-118
• /
• 2017

Bismuth telluride ($Bi_2Te_3$) and its alloys are well-known thermoelectric materials for ambient temperature applications. In this study, the dissolved Bi-Te precursor solution was used to synthesis metallic $Bi_2Te_3$ powder via ultrasonic spray pyrolysis and reduction process. The droplets of the Bi-Te precursor solution were decomposed to Bi-Te oxide powders by ultrasonic spray pyrolysis. The spherical $Bi_2Te_3$ powders were synthesized by reduction reaction in atmosphere of hydrogen gas at the temperature above $375^{\circ}C$ for 6h. The reduced $Bi_2Te_3$ powders have a mean particle size of $1.5{\mu}m$. The crystal structure of the powder was evaluated by X-Ray diffraction(XRD), and the microstructure with size and shape powders was observed by fieldemission scanning electron microscope(FE-SEM) and transmission electron microscope(TEM).

• Proceedings of the Korean Magnestics Society Conference
• /
• 2003.12a
• /
• pp.361-361
• /
• 2003

• Proceedings of the Korean Magnestics Society Conference
• /
• 2003.06a
• /
• pp.92-93
• /
• 2003

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.320-320
• /
• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.8
• /
• pp.2743-2750
• /
• 2011

Lanthanide(III)-cored complex as a wavelength conversion material has been successfully designed and synthesized for highly efficient dye-sensitized solar cells, for the first time, since light with a short wavelength has not been effectively used for generating electric power owing to the limited absorption of these DSSCs in the UV region. A black dye (BD) was chosen and used as a sensitizer, because BD has a relatively weak light absorption at shorter wavelengths. The overall conversion efficiency of the BD/WCM device was remarkably increased, even with the relatively small amount of WCM added to the device. The enhancement in $V_{oc}$ by WCM, like DCA, could be correlated with the suppression of electron recombination between the injected electrons and $I_3{^-}$ ions. Furthermore, the short-circuit current density was significantly increased by WCM with a strong UV light-harvesting effect. The energy transfer from the Eu(III)-cored complex to the $TiO_2$ film occurred via the dye, so the number of electrons injected into the $TiO_2$ surface increased, i.e., the short-circuit current density was increased. As a result, BD/WCM-sensitized solar cells exhibit superior device performance with the enhanced conversion efficiency by a factor of 1.22 under AM 1.5 sunlight: The photovoltaic performance of the BD/WCM-based DSSC exhibited remarkably high values, $J_{sc}$ of 17.72 mA/$cm^2$, $V_{oc}$ of 720 mV, and a conversion efficiency of 9.28% at 100 mW $cm^{-2}$, compared to a standard DSSC with $J_{sc}$ of 15.53 mA/$cm^2$, $V_{oc}$ of 689 mV, and a conversion efficiency of 7.58% at 100 mW $cm^{-2}$. Therefore, the Eu(III)-cored complex is a promising candidate as a new wavelength conversion coadsorbent for highly efficient dye-sensitized solar cells to improve UV light harvesting through energy transfer processes. The abstract should be a single paragraph which summaries the content of the article.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.173-173
• /
• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.

• Korean Journal of Materials Research
• /
• v.15 no.4
• /
• pp.275-280
• /
• 2005

The growth of hafnium oxide thin films by atomic layer deposition was investigated in the temperature range of $175-350^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors. A self-limiting growth of $0.6\AA/cycle$ was achieved at the substrate temperature of $240-280^{\circ}C$. The films were amorphous and very smooth (0.76-0.80 nm) as examined by X-ray diffractometer and atomic force microscopy, respectively. X-ray photoelectron spectroscopy analysis showed that the films grown at $300^{\circ}C$ was almost stoichiometric. Electrical measurements performed on $MoW/HfO_2$(20 nm)/Si MOS structures exhibited high dielectric constant$(\~17)$ and a remarkably low leakage current density of at an applied field of $1.5-6.2\times10^{-7}A/cm^2$ MV/cm, probably due to the stoichiometry of the films.