• 제목/요약/키워드: adsorbed oxygen

검색결과 155건 처리시간 0.026초

Oxygen reduction reaction and electrochemical properties of transition metal doped (Pr,Ba)Co2O5+𝛿

  • Kanghee Jo;Heesoo Lee
    • 한국결정성장학회지
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    • 제33권1호
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    • pp.37-44
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    • 2023
  • Transition metal (Me = Cu, Fe, Ni) doped (Pr, Ba)Co2O5+𝛿 (PBCO) material were investigated in terms of electronic structure change and electrochemical properties. It was confirmed that (Pr, Ba)(Co, Cu)O5+𝛿 (PBCCu) and (Pr, Ba)(Co, Fe)O5+𝛿 (PBCFe) showed cubic and orthorhombic structures, respectively, but (Pr, Ba)(Co, Ni)O5+𝛿 (PBCNi) showed secondary phases. PBCCu has an average particle diameter of 1093 nm, and PBCO and PBCFe have an average particle diameter of 495.1 nm and 728 nm, respectively. The average oxidation values of B site ions in PBCMe were calculated to be 3.26 (PBCO), 2.48 (PBCCu), 3.32 (PBCFe), and valence band maximum (VBM) was -0.42 eV (PBCO), -0.58 eV (PBCCu), -0.11 eV (PBCFe). It is expected that PBCCu easily interacts with adsorbed oxygen due to the lowest oxidation value and the highest VBM. The polarization resistance was 0.91 Ω cm2 (PBCO), 0.77 Ω cm2 (PBCCu), 1.06 Ω cm2 (PBCFe) at 600℃, showing the lowest polarization resistance of PBCCu.

활성탄 슬러리를 이용한 $SO_2$ 가스의 흡착 및 산화반응 속도 (Adsorption and Oxidation Reaction Rate of $SO_2$ in Slurries of Activated Carbon)

  • 최용택;신창섭;이태희
    • 한국대기환경학회지
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    • 제3권1호
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    • pp.41-46
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    • 1987
  • Adsorption and reaction studies were made for the catalytic oxidation in aqueous slurries of activated carbon at room temperature and atmospheric pressure. In order to analyze the reaction rate, the mechanism was assumed by the steps of nonhomogeneous catalytic reaction. The experimental result show that oxidation rate was controlled by the reaction between adsorbed molecular oxygen and sulfur dioxide on the catalyst surface. Ar room temperature, the equat5ion of reaction rate was given as $ro_2 = 2.49 \times 10^{-7} P_O_2^{0.604}$.

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Adsorption properties of MgO protective layer in AC PDP

  • Manakhov, Anton;Nikishin, Nikolay;Hur, Min;Heo, Eun--Gi
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.384-387
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    • 2008
  • We have studied the adsorption of contaminations on the MgO protective layer by Thermal Desorption Spectrometry (TDS). The result shows that the increase in exposure time, MgO thickness and humidity multiply the quantity of adsorbed contaminations. It is also found that the desorption activation energy and contamination quantity is decreased by the additional firing process of MgO layer under oxygen environment.

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Does $N_2O$ react over oxygen vacancy on $TiO_2$(110)?

  • 김보성;김유권
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.196-196
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    • 2011
  • Molecular $N_2O$ has bee known to react over oxygen vacancy on a reduced rutile $TiO_2$(110)-1${\times}$1 surface to desorb as molecular $N_2$ leaving oxygen atom behind. In the present study, we investigated the reaction of $N_2O$ on rutile $TiO_2$(110) using temperature-programmed desorption (TPD). Our results indicate that $N_2O$ does not react over the oxygen vacancy under a typical UHV experimental condition. On a rutile $TiO_2$(110)-1${\times}$1 with a well-defined oxygen vacancy concentration of 5% ($2.6{\times}10^{13}/cm^2$), $N_2O$ desorption features show a monolayer peak maximum at 135 K followed by a small peak maximum at 170 K. When the oxygen vacancy is blocked with $H_2O$, the $N_2O$ peak at 170 K disappears completely, indicating that the peak is due to molecular $N_2O$ interacting with oxygen vacancy. The integrated amount of desorbed $N_2O$ plotted against the amount of adsorbed $N_2O$ however shows a straight line with no offset indicating no loss of $N_2O$ during our cycles of TPD measurements. In addition, our $N_2O$ uptake measurements at 70~100 K showed no $N_2$ (as a reaction product) desorption except contaminant $N_2$. Also, $H_2O$ TPD taken after $N_2O$ scattering up to 350 K indicates no change in the vacancy-related $H_2O$ desorption peak at 500 K showing no change in the oxygen vacancy concentration after the interaction with $N_2O$.

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Partial Oxidation of Methane over Ni/SiO2

  • Roh, Hyun-Seog;Dong, Wen-Sheng;Jun, Ki-Won;Liu, Zhong-Wen;Park, Sang-Eon;Oh, Young-Sam
    • Bulletin of the Korean Chemical Society
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    • 제23권5호
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    • pp.669-673
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    • 2002
  • Ni catalyst (Ni: 15 wt%) supported on precalcined SiO2 has been investigated in reforming reactions of methane to synthesis gas. The catalyst exhibited fairly good activity and stability in partial oxidation of methane (POM), whereas it deactivated in steam reforming of methane (SRM). Pulse reaction results of CH4, O2, and CH4/O2 revealed that Ni/SiO2 has high capability to dissociate methane. The results also revealed that both CH4 and O2 are activated on the surface of metallic Ni, and then surface carbon species react with adsorbed oxygen to produce CO and CO2 depending on the bond strength of the oxygen species on the catalyst surface.

PEM을 이용한 ITO/PET film의 조성 제어 (The composition control of ITO/PET by plasma emission monitor)

  • 한세진;김용환;김영환;이택동
    • 한국진공학회지
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    • 제8권4A호
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    • pp.438-444
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    • 1999
  • The characterization of the reactively sputtered ITO layer on the PET film has been studied. The PEM device has been used to determine the optimum stoichimetry through control of the amount of oxygen incorporated into the alloy target and the optimum operation conditions to produce films with the highest electrical conductivity and visible transparency. The PEP film was pre-treated under the plasma discharge condition to remove the adsorbed gases and to modify the surface morphology. The results revealed that by adjusting the flow rate of oxygen with the spectral intensity of indium target, the composition of plasma gas can be kept constant during the entire deposition period. The resistivity of ITO film obtained was fond to be about 37$\Omega\Box$, and the transmittance of visual range was about 86%.

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Optoelectronic Characteristics of Hydrogen and Oxygen Annealed Si-O Superlattice Diode

  • Seo, Yong-Jin
    • Transactions on Electrical and Electronic Materials
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    • 제2권2호
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    • pp.16-20
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    • 2001
  • Optoelectronic characteristics of the superlattice diode as a function of deposition temperature and annealing conditions have been studied. The multilayer nanocrystalline silicon/adsorbed oxygen (nc/Si/O) superlattice formed by molecular beam epitaxy (MBE) system. Experimental results showed that deposition temperature of 550$^{\circ}C$, followed by hydrogen annealing leads to best results, in terms of optical photoluminescence (PL) and electrical current-voltage (I-V) characteristics. Consequently, the experimental results of multilayer Si/O superlattic device showed the stable photoluminescence and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic devices, and can be readily integrated with conventional silicon ULSI processing.

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Regeneration of Exhausted Activated Carbon by a Countercurrent Oxygen Reaction

  • 류건상;김태동;김유항
    • Bulletin of the Korean Chemical Society
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    • 제20권12호
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    • pp.1447-1450
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    • 1999
  • Countercurrent oxygen reaction (COR) was developed and evaluated for regeneration of exhausted activated carbon. Whether the regeneration technique is feasible or not is affected strongly by gradual loss and physical changes of activated carbon, energy consumption, and effective removal of adsorbed materials during the process. Various parameters such as reaction temperature, the loss of activated carbon, surface area, pore volume, surface structure, adsorptive property, etc. were examined to determine the effectiveness of COR. The results of these tests showed that the parameters were strongly dependent on oxidant flow rate, and suggest that the newly developed COR is comparable and, in some ways, possibly superior to conventional regeneration techniques because the overall process runs in a single step and is less energy intensive, and also because the adsorptive capacity of exhausted activated carbon was completely recovered.

Si(111)-7${\times}$7 표면의 초기산화 단계에서의 국부 일함수 변화 (Local Work-function Variation of the Initial Oxidation-Stages of Si(111)-7${\times}$7)

  • 임삼호;구세정;김기정;박찬;서재명
    • 한국진공학회지
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    • 제2권2호
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    • pp.166-170
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    • 1993
  • 자외선-광전자-분광법(UPS)를 이용하여 저온(40K)으로 유지된 Si(111)-7${\times}$7 표면에 산소를 노출시킨 후 잰 평균 일함수가 제논-흡착-광전자 분광법(PAX)을 이용하여 잰 동일 표면의 변화된 부분의 국부 일함수보다 약 0.4V 가량 높은 것을 발견하였다. 이는 Si(111)-7${\times}$7 표면의 초기 산화 단계에서 커다란 일함수 변화를 유도하는 요인은 표면에 분자상태로 흡착된 산소임을 시사한다. 또한 Xe 3d 및 5p 에너지 밀도곡선들의 이동으로부터 변화된 부분의 일함수가 변화되지 않은 부분의 일함수보다 0.6eV 높은 것을 알 수 있었다.

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현탁된 산화 아연에서의 $O_2^-$의 광탈착 (Photodesorption of $O_2^-$ on Suspended Zine Oxide)

  • 전동철;한종수;이계수;전학제
    • 대한화학회지
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    • 제30권1호
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    • pp.47-50
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    • 1986
  • 산화아연에 흡착된 $O_2^-$의 광탈착이 ZnO-$O_2(N_2)$-rubrene-bromobenzene계에서 연구되었다. 산화아연의 금지대 에너지(3.2eV)보다 큰 에너지를 가진 빛을 계에 조사할 때, 산화아연의 양이 증가함에 따라 변화된 rubrene의 양도 증가하였다. 그러나 3.2eV보다 적은 에너지의 빛을 조사시켰을 때는 산화아연의 양이 증가함에 따라 변화된 rubrene의 양은 감소하였다. ZnO-$O_2$-rubrene-bromobenzene계와 ZnO-$N_2$-rubrene-bromobenze계에서의 변화된 rubrene의 양은 현저한 차이가 있었다. 이 사실들로 부터 산화아연에 흡착된 $O_2^-$가 광탈착 과정에서 단일항 산소로 변화하고 변화된 단일항 산소가 rubrene과 반응하는 것으로 생각되었다.

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