• The Journal of Korean Institute of Communications and Information Sciences
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• v.42 no.4
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• pp.716-722
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• 2017

In this paper, a fully printed NFC tag operating at 13.56 MHz was designed and fabricated using silver nano-paste and carbon ink. The proposed NFC tag has a printed coil with an inductance of $2.74{\mu}H$ on a PI film for application to an NFC tag IC with an internal capacitance of 50 pF. Screen printing technology used in this paper has advantages such as large area printing for mass production, low cost and eco-friendly process compared to conventional PCB manufacturing process. The proposed structure consists of a circular coil implemented as a single layer using silver nano-paste and carbon ink, a jumper pattern for chip mounting between the outer edge and the center of the coil, and an insulation pattern between the coil and the jumper pattern. In order to verify the performance of the proposed NFC tag, we performed the measurements of the printing line width, thickness, line resistance, adhesion and environmental reliability, and confirmed the suitability of the NFC tag based on the full-printed manufacturing method.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.853-863
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• 2000

In this study, a new UBM materials system for solder flip chip interconnection of Cu pads were investigated using electroless copper (E-Cu) and electroless nickel (E-Ni) plating method. The interfacial reaction between several UBM structures and Sn-36Pb-2Ag solder and its effect on solder bump joint mechanical reliability were investigated to optimife the UBM materials design for solder bump on Cu pads. Fer the E-Cu UBM, continuous coarse scallop-like $Cu_{6}$ $Sn_{5}$ , intermetallic compound (IMC) was formed at the solder/E-Cu interface, and bump fracture occurred this interface under relative small load. In contrast, Fer the E-Ni/E-Cu UBM, it was observed that E-Ni effectively limited the growth of IMC at the interface, and the Polygonal $Ni_3$$Sn_4$ IMC was formed because of crystallographic mismatch between monoclinic $Ni_3$$Sn_4$ and amorphous E-Ni phase. Consequently, relatively higher bump adhesion strength was observed at E-Ni/E-Cu UBM than E-Cu UBM. As a result, it was fecund that E-Ni/E-Cu UBM material system was a better choice for solder flip chip interconnection on CU PadS.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.436-441
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• 2011

Metal coating with several nanometer thickness was applied on the carbon nanotubes (CNTs) in order to improve electron emission characteristics and emission reliability for the potential applications in the area of various electron sources and displays. CNTs were grown on the 2-nm thick Invar (52% Fe, 42% Ni, 6% Co alloy)-catalized Si substrate by using plasma-enhanced chemical vapor deposition at $450^{\circ}C$. In order to reduce the spatial density of densely packed CNTs, as-grown CNTs were partly etched back by $N_2$ plasma and subsequently coated with 5~150 nm thick Ti by a sputtering method. 5 nm thick Ti-coated CNTs produced four times higher emission current density at the electric field of 6 V/${\mu}m$ and much lower emission current fluctuation, compared with the as-grown CNTs. These improved emission properties are mainly due to not only the work function of Ti (4.3 eV) lower than that of pristine CNTs (5 eV), but also lower contact resistance and better adhesion between CNT emitters and substrate accomplished by Ti coating.