• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.12
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• pp.5249-5267
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• 2016

Cognitive radio is an efficient technique to improve spectrum efficiency and relieve the pressure of spectrum resources. In this paper, we investigate the spectrum sensing period in cooperative relay cognitive radio networks; analyze the relationship between the available capacity and the signal-to-noise ratio of the received signal of second users, the target probability of detection and the active probability of primary users. Finally, we derive the closed form expression of the optimal spectrum sensing period in terms of maximum throughput. We simulate the probability of false alarm and available capacity of cognitive radio networks and compare optimal spectrum sensing period scheme with fixed sensing period one in these performance. Simulation results show that the optimal sensing period makes the cognitive networks achieve the higher throughput and better spectrum sensing performance than the fixed sensing period does. Cooperative relay cognitive radio networks with optimal spectrum sensing period can achieve the high capacity and steady probability of false alarm in different target probability of detection. It provides a valuable reference for choosing the optimal spectrum sensing period in cooperative relay cognitive radio networks.

• Progress in Superconductivity and Cryogenics
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• v.18 no.2
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• pp.42-47
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• 2016

A free-piston reciprocating expander is a device which operates without any mechanical linkage to a stationary part. Since the motion of the floating piston is only controlled by the pressure difference at two ends of the piston, this kind of expander may indispensably require a sophisticated active control system equipped with multiple valves and reservoirs. In this paper, we have suggested a novel design that can further reduce complexity of the previously developed cryogenic free-piston expander configuration. It is a simple replacement of both multiple valves and reservoirs by a combination of an orifice valve and a reservoir. The functional characteristic of the integrated orifice-reservoir configuration is similar to that of a phase controller applied in a pulse tube refrigerator so that we designate the one as a phase controller. Depending on the orifice valve size in the phase controller, the different PV work which affects the expander performance is generated. The numerical model of this unique free-piston reciprocating expander utilizing a phase controller is established to understand and analyze quantitatively the performance variation of the expander under different valve timing and orifice valve size. The room temperature experiments are carried out to examine the performance of this newly developed cryogenic expander.

• Journal of The Korean Astronomical Society
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• v.34 no.4
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• pp.329-331
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• 2001

We investigate the morphology of Active Galactic Nuclei(AGN) jets. AGN jets propagate over kpc $\~$ Mpc and their beam velocities are close to the speed of light. The reason why many jets propagate over so long a distance and sustain a very collimated structure is not well understood. It is argued that some dimensionless parameters, the density and the pressure ratio of the jet beam and the ambient gas, the Mach number of the beam, and relative speed of the beam compared to the speed of light, are very useful to understand the morphology of jets namely, bow shocks, cocoons, nodes etc. The role of each parameters has been studied by numerical simulations. But more research is necessary to understand it systematically. We have developed 2D relativistic hydrodynamic code to analyze relativistic jets. We pay attention to the propagation velocity which is derived from 1D momentum balance in the frame of the working surface. We show some of our models and discuss the dependence of the morphology of jets on the parameter.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.69-70
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• 2000

There are currently considerable interest in the applications of conjugated polymers, oligomers, and small molecules for thin-film electronic devices. Organic materials have potential advantages to be utilized as semiconductors in field-effect transistors and light-emitting diodes. In this study, pentacene thin-film transistors (TFTs) were fabricated on glass substrate. Aluminums were used for gate electrodes. Silicon dioxide was deposited as a gate insulator by PECVD and patterned by reactive ion etching (R.I.E). Gold was used for the electrodes of source and drain. The active semiconductor pentacene layer was thermally evaporated in vacuum at a pressure of about $10^{-8}$ Torr and a deposition rate $0.3{\AA}/s$. The fabricated devices exhibited the field-effect mobility as large as 0.07 $cm^2/V.s$ and on/off current ratio as larger than $10^7$.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.455-457
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• 2000

In this work the electrical characteristics of organic TFTs with the semiconductor-insulator interfaces, where the gate dielectrics were treated by the two methods which are the deposition of Octadecyltrichlorosilane (OTS) on the insulator and rubbing the insulator surface. Pentacene is used as an active semiconducting layer. The semiconductor layer of pentacene was thermally evaporated in vacuum at a pressure of about $2{\times}10^{-7}$ Torr and at a deposition rate of $0.3{\AA}/sec$. Aluminum and gold were used for the gate and source/drain electrodes. OTS is used as a self-alignment layer between $SiO_2$ and pentacene. The gate dielectric surface was rubbed before pentacene is deposited on the insulator. In order to confirm the changes of the surface morphology the atomic force microscopy (AFM) was utilized. The characteristics of the fabricated TFTs are measured to clarify the effects of the surface treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.383-386
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• 2002

This paper reports on the fluid flow simulation results of an active microvalve. The mechanical and fluidic analysis are done by finite element method. The designed structure is normally closed microvalve using buckling effect, which is consist of three separate structures; a valve seat die, an actuator die and a small piezoelectric actuator. It is confirmed that the complete laminar flow and the lowest flow leakage are strongly depend on the valve seat geometry. In addition, turbulent flow was occurs in valve outlet according to increase seat dimension, height and inlet pressure. From this, we was deducts the optimum geometry of the valve seat and diaphragm deflection that have an great influence fluid flow in microvalve. Thus, it is expected that our simulation results would be apply for constructing integrated chemical analyzing system or drug delivery system.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1352-1354
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• 1997

Transparent conductive thin films have found many application in many active and passive electronic and opto-electronic devices as like flat Panel display electrode and window heat mirror, etc. Low resistivity and high transmittance of this films can be obtained by controlling deposition parameters, which are oxygen partial Pressure, substrate temperature and dopant concentration. In this study, We prepared non-stoichiometric and Sb-doped thin films of tin dioxide by reactive DC magnetron sputtering technology. The lowest resistivity of about $3.0{\times}10^{-3}\;{\Omega}cm$ and 80% transmittance in the visible light region have heed obtained at optimal deposition condition.

• Journal of ILASS-Korea
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• v.15 no.1
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• pp.31-37
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• 2010

The aim of this work is to investigate the spray and combustion characteristics of dimethyl-ether (DME) at various injection conditions. The spray characteristics such as spray tip penetration and spray cone angle were experimentally studied from the spray images which obtained from the spray visualization system. Combustion and emissions characteristics were numerically investigated by using KIVA-3V code coupled with Chemkin chemistry solver. From these results, it revealed that DME spray had a shorter spray tip penetration and wider spray cone angle than that of diesel spray due to the low density, low surface tension, and fast evaporation characteristics. At the constant heating value condition, DME fuel showed higher peak combustion pressure and earlier ignition timing, because of high cetane number and superior evaporation characteristics. In addition, the combustion of DME exhausted more $NO_x$ emission and lower HC emission due to the active combustion reaction in the combustion chamber. The result shows that DME had a little soot emission due to its molecular structure characteristics with no direct connection between carbons.

• Journal of the Korean Chemical Society
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• v.30 no.1
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• pp.105-108
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• 1986

Ultrasound(50KHz) accelerated the reduction reaction of aromatic nitro group to aromatic amino group in high yield with mild condition using iron, hydrazine hydrate and activated carbon under room temperature and atmospheric pressure. The activated carbon has been used as a mixing material to highly active metals. However, aromatic nitro group does not reduce at all only with iron-hydrazine witliout adding activated carbon even under ultrasonic irradiation. We also discovered that the conversion yield from nitro group to amino group is directly proportional to the amount of activated carbon.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.450-453
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• 2008

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown in a low-pressure metal organic chemical vapor deposition technique. The effect of In doping on the p-GaN layer was studied through photoluminescence (PL), persistent photoconductivity (PPC), and transmission electron microscopy (TEM) at room temperature. For the In-doped p-GaN layer, the PL intensity increases significantly and the peak position shifts to 3.2 eV from 2.95 eV of conventional p-GaN. Additionally, In doping greatly reduces the PPC, which was very strong in conventional p-GaN. A reduction in the dislocation density is also evidenced upon In doping in p-GaN according to TEM images. The improved optical properties of the In-doped p-GaN layer are attributed to the high crystalline quality and to the active participation of incorporated Mg atoms.