• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.10
• /
• pp.79-86
• /
• 1994

Gain-guided broad-area single quantum well separate confinement heterostructure diode lasers have been fabricated from structures grown by metal organic vapor phase epitaxy. The active layer of the epi-structure is InGaAs emitting 962-965nm and the guiding layer GaAs. The channel width is fixed to 150${\mu}$m and the cavity length varys within the range of 300~800${\mu}$m. For uncoated LD's, the output power of 0.7W has been obtaained at a pulsed current level of 2A, which results about 60% external quantum efficiency. The threshold current density is 200A/cm$^{2}$ for the cavity lengths of 800.mu.m LD's. The stain effect upon the transparent current density has been observed. The internal quantum efficiency is expected to be 88% and the internal loss to be 18$cm^{-1}$. The beam divergence has been measured to be 7$^{\circ}$to lateral and 40$^{\circ}$to transverse direction. finally, 1.2W continuous-wave output power has been obtained at a current level of 2A for AR/HR coated LD's die-bonded on Cu heat-sink and cooled by TEC.

• Journal of Magnetics
• /
• v.11 no.4
• /
• pp.182-188
• /
• 2006

The search for high-density recording materials has been one of most active and vigorous field in the field of magnetism. $FePt-L1_{0}$ nanoparticle has emerged as a potential candidate because of its high anisotropy. In this paper, we provide an overview of recent work at Argonne National Laboratory that contributes to the ongoing dialogue concerning the relation between structure and properties of the FePt nanoparticle system. In particular we discuss the ability to control structure and properties via dosing with Cr. Cr-dosed FePt films were grown via molecular beam epitaxy and annealed at $550^{\circ}C$ in an ultrahigh vacuum chamber, and were studied with the surface magneto-optic Kerr effect (SMOKE), scanning electron microscopy (SEM) and x-ray magnetic circular dichroism (XMCD). We found that small dosage of Cr helps to generate $L1_{0}$ phase FePt magnetic nanoparticles with small size, defined shape and regular spatial distribution on MgO (001) substrate. The nanostructures are ferromagnetic with high magnetic coercivity (${\sim}0.9T$) and magnetic easy axis in the desired out-of-plane orientation. We also show that controlling the lateral region where nanostructures exist is possible via artificial patterning with Cr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.12
• /
• pp.1140-1143
• /
• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFTs) for liquid crystal display that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (S/D) electrodes, gate dielectric layer, and gate electrode, respectively The $NiO_x$ S/D electrodes of which the work function is well matched to that of P3HT are deposited on a P3HT channel by electron-beam evaporation of NiO powder. The maximum saturation current of our P3HT-based TFT is about $15{\mu}A$ at a gate bias of -30 V showing a high field effect mobility of $0.079cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^5$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality P3HT-based TFT.

• Laser Solutions
• /
• v.8 no.1
• /
• pp.9-18
• /
• 2005

The laser direct writing method using a UV Argon-ion laser is studied for fabrication of waveguide. The laser direct writing system is constructed with a vision camera, a xy-stage, a motion controller and the delivery components of a laser beam. The UV Argon-ion laser has wavelength range of $333.6\~363.8$ nm. A photo-active UV curable polymer for a planar light-wave circuit(PLC) of single mode is used. This polymer is irradiated by Argon-ion laser and developed by a solvent after a post-baking. The optimum laser direct writing condition is obtained experimentally by changing various process parameters such as laser power, writing speed and focal length. The propagation and coupling loss of a optical waveguide was measured as 1dB/cm and 0.6dB/cm, respectively. Also, the minimum width of waveguide of $100{\mu}m$(ZPLW-207) is obtained. Finally, the waveguides of line, bend and branch type are successfully fabricated.

• Proceedings of the Optical Society of Korea Conference
• /
• 2000.08a
• /
• pp.3-3
• /
• 2000

Adaptive Optical (AO) technology can compensate for wave-front errors in real-time to improve image and beam quality. The research and development on AO in China began in 1979. In 1980, the first laboratory on AO in China was established in Institute of Optics and Electronics (IOE), Chinese Academy of Sciences (CAS). Since then several AO systems have been built in this Laboratory. The 19-element system is the first AO system in the world ever used in inertial confinement fusion (ICF) facility in our knowledge. It corrects the static error of this large laser engineering. The 21-element system was firstly tested at the 1.2m telescope of Kunming Observatory in 1990 and then up-dated as an IR AO system installed at the 2.16m telescope of Beijing Observatory. The 37-element system was used with a turbulence cell in Laboratory on Atmospheric Optics in Hefei to conduct elementary research on Atmospheric Optics. The 61-element system for astronomical observation is newly developed. It has been successfully installed at the 1.2m telescope of Kunming Observatory and a laser guide star system will be integrated with the system. A compact AO system using our newly developed miniature DM for high resolution ophthalmic imaging of retina is also being built. The key elements of these AO systems, deformable mirrors and fast-steering mirrors, are all developed in this Laboratory. In this talk, the main configurations of these AO systems, some test results as well as the specifications of these active mirrors will be presented.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2006.05a
• /
• pp.1212-1217
• /
• 2006

This study is concerned with static and sinusoidal disturbance rejection for a single periodic input disturbance with known period. In the area of active elimination of a disturbance force, the control input should have two different kinds of gains: one is to deliver a stable control and the other is a force component to cancel the external disturbance force. In this paper we employ a simple state feedback control law to make the balance beam stable and employ a linear observer to estimate the states which represent the external disturbance force components. Simulation results verify our proposed control method to reject a static and sinusoidal disturbance force.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.15-15
• /
• 2011

Atom-thick graphene membrane and nano-sized graphene objects (NGOs) hold substantial potential for applications in future molecular-scale integrated electronics, transparent conducting membranes, nanocomposites, etc. To realize this potential, chemical properties of graphene need to be understood and diagnostic methods for various NGOs are also required. To meet these needs, chemical properties of graphene and optical diagnostics of graphene nanoribbons (GNRs) have been explored by Raman spectroscopy, AFM and STM scanning probes. The first part of the talk will illustrate the role of underlying silicon dioxide substrates and ambient gases in the ubiquitous hole doping of graphene. An STM study reveals that thermal annealing generates out-of-plane deformation of nanometer-scale wavelength and distortion in $sp^2$ bonding on an atomic scale. Graphene deformed by annealing is found to be chemically active enough to bind molecular oxygen, which leads to a strong hole-doping. The talk will also introduce Raman spectroscopy studies of GNRs which are known to have nonzero electronic bandgap due to confinement effect. GNRs of width ranging from 15 nm to 100 nm have been prepared by e-beam lithographic patterning of mechanically exfoliated graphene followed by oxygen plasma etching. Raman spectra of narrow GNRs can be characterized by upshifted G band and strong disorder-related D band originating from scattering at ribbon edges. Detailed analysis of the G, D, and 2D bands of GNRs proves that Raman spectroscopy is still a reliable tool in characterizing GNRs despite their nanometer width.

• Proceeding of EDISON Challenge
• /
• 2017.03a
• /
• pp.270-281
• /
• 2017

In this paper, a vibratory disturbance to the rotor system generated by gyroscopic precession through helicopter rotor is examined. Also, active vibration reduction method is designed and simulated by designing feedback controller. For this purpose, structural analysis is carried out using EDISON's geometric exact beam program which can analyze the rotor with the cantilever condition. And the aeroelastic analysis is performed by coupling it with the simple aerodynamic model. In order to obtain the real-time structural response, the EDISON program analysis results were modeled by nonlinear equations and the Newton-Raphson method was used for the trim analysis.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.13 no.6
• /
• pp.574-581
• /
• 2002

Microstrip $8{ imes}2$ sub-array antennas for a extension to active phased array antennas are designed, fabricated and measured for TX/RX dual operation in satellite communication and a reception of satellite broadcasting. For the frequency range from 11.7 to 12.75 GHz for RX and from 14 to 14.5 GHz for TX, two orthogonal linear polarizations of ${pm}45^{\circ}$ are used to transmit and receive simultaneously with one radiator. They adopt dual resonance between two patches for wideband characteristics in RX band and show isolation characteristics over 20 dB. An electrical beam tilt of $30^{\circ}$ is achieved and a tapered power distribution, narrow element spacing are used for the purpose of low side-lobe characteristics.

• Proceedings of the KIEE Conference
• /
• 2000.11c
• /
• pp.446-448
• /
• 2000

Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. For the gate dielectric layer, OPTMER PC403 photo acryl (JSR Coporation.) was spin-coated and cured at $220^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was $50{\mu}m$ and 5 mm. It was found that field effect mobility was $0.039\;cm^2V^{-1}s^{-1}$, threshold voltage was -7 V, and on/off current ratio was $10^6$.