• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.52-59
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• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.

• Bulletin of the Korean Chemical Society
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• 제23권10호
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• pp.1404-1408
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• 2002

The resonance Raman spectra of trans-polyacetylene films doped heavily with electron donor (Na) and acceptor (HClO4) have been measured with excitation wavelengths between 488- and 1320-nm, and the relationships between the Raman excitation photon energies (2.54-0.94 eV) and its wavenumbers were discussed. We found the linear dependence of the Raman shifts with the exchanges of excitation photon energies. In particular, the Raman wavenumbers in the C=C stretching $(V_1$ band) showed a dramatic decrease with the increase in Raman excitation photon energies. In the case of acceptor doping, its change is larger than that of donor doping. The observed wavenumber (1255-1267 $cm^{-1}$) of the $V_2$ band (CC stretch) of Na-doped form is lower than that of the corresponding band (1290-1292 $cm^{-1}$) of its pristine trans-polyacetylene, whereas the contrary is the case for the HClO4 doped form (1295-1300 $cm^{-1}$). The origin of doping-induced Raman bands is discussed in terms of negative and positive polarons.

• Transactions on Electrical and Electronic Materials
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• 제2권4호
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• pp.24-29
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• 2001

GaN films were grown for various Mg doping concentrations in metal-organic chemical vapor deposition. Below the Mg concentration of 10$^{19}$ ㎤, the thermally annealed sample shows the compensated phase to n-type GaN in Hall measurement. In the MB concentration of 4$\times$10$^{19}$ ㎤ corresponding to the hole carrier concentration of 2.6$\times$1$^{19}$ ㎤ there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the $V_{Ga}$ and for an acceptor of $Mg_{Ga}$ . The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photocurrent signal of 3.02-3.31 eV. Above the Mg concentration of 4$\times$10$^{19}$ ㎤, both the Mg doping level and Mg concentration were saturated and there Is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band.

• 한국재료학회지
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• 제6권9호
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• pp.950-958
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• 1996

저압 유기금속 화학증착법을 사용하여 AIGaInP층의 diethylzinc의 III족 원소(AO, Ga, In)에 대한 비와 성장온도 변화에 따른 Zn(acceptor)의 첨가 농도특성을 연구하였다. Diethylzinc의 III족 원소(AI, Ga, In)비를 0.4에서 2.0까지 변화시켜 본 결과 0.85일 때 가장 높은 acceptor 농도를 가졌으며, 성장온도를 69$0^{\circ}C$에서 80$0^{\circ}C$까지 변화시킨 결과 성장온도에 대한 변화는 69$0^{\circ}C$-73$0^{\circ}C$일 때 온도가 증가함에 따라 acceptor농도는 커졌으며, 그 이상에서는 감소하였다. 또한, 성장속도가 빠를수록 높은 acceptor 농도를 가지게 되어 3.3$\mu\textrm{m}$/hr의 성장속도일 때 8x1017/㎤의 가장 높은 acceptor 농도를 얻을수 있다.

• 전자공학회논문지A
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• 제31A권5호
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• pp.126-133
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• 1994

Doping effects and semiconductor behaviors of the dispersed p- and n-Si, p- and n- GaAs particles in the aqueous electrolyte have been studied using microelectrophoretic, voltammetric and chronoamperometric techniques. The cations (K$^{+}$) are adsorbed on both the p- and n- Si particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are negatively charged acceptor states. On the other hand, the anions (CI$^{-}$) are adsorbed on both the p- and n- GaAs particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are positively charged donor states. Under the same conditions, electrophoretic mobilities, electrochemical processes, doping effects and related semiconductor behaviors of the Si and the GaAs particles are similar regardless of the doping profiles, i. e. dopants and doping concentrations. The doping effects and related semiconductor behaviors of the dispersed p- and n- type semiconductor particles are gradually lost with decreasing dimensions.

• Journal of Electrical Engineering and Technology
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• 제1권1호
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• pp.120-126
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• 2006

Ferroelectric materials have been widely investigated for high density dynamic random access memories, opto-electrics, and tunable microwave devices due to their properties. In this study, we have investigated the dielectric properties of Ti doped $K(Ta,\;Nb)O_3$ thin films. By doping Ti Into the $K(Ta,Nb)O_3$ system, Ti with a valence value of +4 will substitute Ta or Nb ions with a valence value of +5. This substitution will introduce an acceptor state. Therefore, this introduced acceptor state will reduce dielectric loss by trapping electrons. Using 3% Ti-doped $K(Ta,Nb)O_3\;targets,\;K(Ta,Nb)O_3$:Ti films were grown in MgO(001) crystals using pulsed laser deposition. First, growth conditions were optimized. A reduction in the loss tangent was observed for Ti-doped $K(Ta,Nb)O_3$ relative to undoped films, although a reduction in tunability is also seen. The crystallinity, morphology, and tunability of $K(Ta,Nb)O_3$:Ti films are reported.

• 한국세라믹학회지
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• 제46권2호
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• pp.219-223
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• 2009

Effects of MgO or $R_2O_3$(R:Dy, Ho, Yb) on the capacitance aging behavior of multilayer ceramic capacitors (MLCCs) based on $BaTiO_3$ dielectrics under DC electrical fields has been studied. At a DC field of 1 $V{/\mu}m$, the capacitance of MLCC specimens dropped immediately in a very short period (<10 s, the first stage) and then decreased continuously with time (the second stage). Mn doping significantly increased the aging rate in the second stage. The addition of MgO or $R_2O_3$ notably decreased the second stage aging rate of Mn-doped specimens. Yb doping gives rise to the lowest aging rate in the second stage, which is due to the larger population of defect dipoles associated with oxygen vacancies.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.200-203
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• 2011

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

• 한국세라믹학회지
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• 제34권8호
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3박막을 RF 마그네트론 스퍼터링법을 이용하여 Pt/Ti/SiO2/Si(100) 기판에 증착하였다 .누설전류에 영향을 주는 것으로 알려진 열처리 조건, dopant 효과 등을 평가하고자 이온반경이Ti와 유사하고 대부분이 Ti 자리를 치환하는 것으로 알려진 Nb와 Al을 각각 danor와 acceptor로 선택하여 BST 박막에 첨가한 후 누설전류를 측정하였다. 고온에서 in-situ 증착된 BST 박막은 거친 표면 형상을 보이며 낮은 전압에서 파괴가 발생하고, Nb 첨가로 누설전류가 증가하였다. 삼온 증착후 후열처리된 박막은 표면 형상도 평할도가 증가하였으며 in-situ로 제조된 박막에 비해 높은 파괴전압과 낮은 누설전류를 나타내었다. 특히 Al이 첨가된 BST 박막의 누설전류밀도는 ~10A/cm2로 도핑을 하지 않은 박막이나 Nb가 첨가된 박막에 비해 매우 낮은 누설전류밀도를 나타내었으며, 이는 산화로 인한 산소공공의 감소, 이동 가능한 hole의 감소와 후열처리과정중 계면 및 입계의 산화로 Schottky 장벽에 높아진 결과로 판단된다.

• Macromolecular Research
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• 제10권5호
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• pp.286-290
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• 2002

The FT-Raman spectra of trans-polyacetylene films doped lightly with iodine were obtained with the 1320-nm laser line. The observed Raman bands are attributed to positively charged domains created by acceptor doping. The observed Raman wavenumbers of the V$_2$, (CC stretch), V$_3$, and V$_4$ bands (mixed of CC stretch and CH in-plan bending) of iodine-doped form are slightly higher than those of the corresponding bands of pristine trans-polyacetylene, whereas the contrary is the case for V$_1$, and (C=C stretch) of iodine-doped form. In particular, these upshifts of the V$_2$ and V$_3$ bands are distinguished from the downshifts of these bands in donor doping. The origin of doping induced Raman bands is discussed in terms of solitons and polarons.