• Title/Summary/Keyword: above-threshold

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Effect of the Temperature on Resistivity of Carbon Black-Polyethylene Composites Below and Above Percolation Threshold (Carbon Black-Polyethylene복합재료의 Percolation Threshold 전후 저항율에 미치는 온도의 영향)

  • Shin, Soon-Gi
    • Korean Journal of Materials Research
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    • v.19 no.12
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    • pp.644-648
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    • 2009
  • Temperature dependency of resistivity of the carbon black-polyethylene composites below and above percolation threshold is studied based on the electrical conduction mechanism. Temperature coefficient of resistance of the composites below percolation threshold changed from minus to plus, increasing volume fraction of carbon black; this trend decreased with increasing volume fraction of carbon black. The temperature dependence of resistivity of the composites below percolation threshold can be explained with a tunneling conduction model by incorporating the effect of thermal expansion of the composites into a tunneling gap. Temperature coefficient of resistance of the composites above percolation threshold was positive and its absolute value increased with increasing volume fraction of carbon black. By assuming that the electrical conduction through percolating paths is a thermally activated process and by incorporating the effect of thermal expansion into the volume fraction of carbon black, the temperature dependency of the resistivity above percolation threshold has been well explained without violating the universal law of conductivity. The apparent activation energy is estimated to be 0.14 eV.

Power extraction efficiency and lasing wavelength distribution of index-coupled DEB lasers above-threshold for various facet reflectivity combinations (문턱 전류 이상에서 양 단면 반사율 조합에 따른 index-coupled DFB 레이저의 파워 추출 효율과 발진 파장 분포)

  • 김상택;김부균
    • Korean Journal of Optics and Photonics
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    • v.14 no.4
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    • pp.413-422
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    • 2003
  • We have calculated the power extraction efficiency and the lasing wavelength distribution of index-coupled DFB lasers at threshold for various kL and facet reflectivity combinations, and compared with those above-threshold. The power extraction efficiency increases as the asymmetry of the facet reflectivities increases. The power extraction efficiency above-threshold is slightly larger than that at threshold. Since the relative photon density around the center region increases as kL increases, the power extraction efficiency decreases. The uniformity of the distribution of lasing wavelength over the stop band increases due to the relief of mode degeneracy as the asymmetry of the facet reflectivities increases. In the case of AR-HR combination, the lasing wavelength distributions at threshold are similar to those above-threshold. However, in the case of AR-AR combination, the lasing wavelength at threshold is concentrated on both edges of the stop band, while it is concentrated only on the longer wavelength edge above-threshold. As kL increases, the range of the lasing wavelength distribution increases due to the increase of the stop band. The effect of AR reflectivity on the power extraction and the lasing wavelength distribution is very weak.

The Effect of Laser Geometry and Material Parameters on the Single Mode Gain Difference in Quarter Wavelength Shifted DFB Laser above Threshold Current (문턱전류이상에서 구조 및 재료 변수들이 $\lambda$/4위상천이 DFB 레이저의 단일모드 이득차에 미치는 영향)

  • 이홍석;김홍국;김부균;이병호
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.3
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    • pp.75-84
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    • 1999
  • Systematic studies for the effect of the linewidth enhancement factor, the confinement factor, the internal loss and the cavity length on the single mode gain difference and the frequency detuning are performed for $\lambda$/4 phase shifted DFB lasers above threshold. The above threshold characteristics are mainly determined by the linewidth enhancement factor, not by the confinement factor or the parameter defined by the product of the linewidth enhancement factor and the confinement factor. The normalized internal loss defined by the product of the internal loss and the cavity length mainly determines the above threshold characteristics compared to that of the internal loss or the cavity length alone. The effect of the cavity length on threshold characteristics is larger than that of the internal loss in the case of the same normalized internal loss. The above threshold characteristics of quantum well lasers are more resistant to the variations of the confinement factor and the normalized internal loss than those of bulk lasers due to the small linewidth enhancement factor.

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The Electrical Property of Polymer Matrix Composites Added Carbon Powder

  • Shin, Soon-Gi
    • Korean Journal of Materials Research
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    • v.25 no.12
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    • pp.678-682
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    • 2015
  • The electrical property of polymer matrix composites with added carbon powder is studied based on the temperature dependency of the conduction mechanism. The temperature coefficient of the resistance of the polymer matrix composites below the percolation threshold (x) changed from negative to positive at 0.20 < x < 0.21; this trend decreased with increasing of the percolation threshold. The temperature dependence of the electrical property(resistivity) of the polymer matrix composites below the percolation threshold can be explained by using a tunneling conduction model that incorporates the effect of the thermal expansion of the polymer matrix composites into the tunneling gap. The temperature coefficient of the resistance of the polymer matrix composites above the percolation threshold has a positive value; its absolute value increased with increasing volume fraction of carbon powder. By assuming that the electrical conduction through the percolating paths is a thermally activated process and by incorporating the effect of thermal expansion into the volume fraction of the carbon power, the temperature dependency of the resistivity above the percolation threshold can be well explained without violating the universal law of conductivity.

Effects of Wage on FDI Inflows Based on the Threshold of Institutional Quality

  • LEE, Sunhae;JEON, Young-Hoon
    • The Journal of Industrial Distribution & Business
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    • v.12 no.8
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    • pp.41-52
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    • 2021
  • Purpose: The study aims to analyze effects of wage on FDI inflows based on the threshold of institutional quality in 14 developing economies of Southeast and South Asia over the period from 2000-2017. Research design, data, and methodology: The study applies a fixed effect panel threshold regression. As a proxy for the institutional quality, it uses the six components of Worldwide Governance Indicators or a compound index obtained by an average of the six components. The data were taken from World Bank, the Chinn & Ito Database, and UNCTAD. To the best of our knowledge, no researches so far have considered the threshold of institutional quality in estimating the effect of wage on FDI inflows. Results: The composite index and each component of the six indicators of institutional quality except for voice and accountability, and regulatory quality are found to have nonlinear effects on FDI inflows. When the institutional quality is below the threshold, wage affects FDI inflows negatively. When the institutional quality is above the threshold, however, wage does not significantly affect FDI inflows. Conclusions: The effect of wage on FDI inflows varies depending on whether the institutional quality of the target countries is above or below the threshold.

Infrastructure-Growth Link and the Threshold Effects of Sub-Indices of Institutions

  • OGBARO, Eyitayo Oyewunmi;OLADEJI, Sunday Idowu
    • Asian Journal of Business Environment
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    • v.11 no.1
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    • pp.17-25
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    • 2021
  • Purpose: This study extends previous empirical work on the threshold effects of institutions on the relationship between infrastructure and economic growth. It does so by using three sub-indices of institutions as the threshold variable in place of aggregate index. This is with a view to determining the roles of the sub-indices in the nexus between infrastructure and economic growth. Research design, data and methodology: The analysis is based on a dynamic panel threshold regression model using a panel data set comprising 41 countries in Sub-Saharan Africa over the sample period of 1996-2015. Data are obtained from Ogbaro (2019). Results: The study finds that infrastructure exerts significant positive effects on economic growth below and above the threshold values of the three sub-indices, with higher effects above the threshold values. Results also show that on average, the Sub-Saharan African countries are not able to satisfy any of the threshold conditions, which accounts for their poor growth experience. Conclusion: The study concludes that countries with weak institutions do not benefit maximally from infrastructure development policies. The paper, therefore, recommends that countries in Sub-Saharan Africa need to focus on improving their institutional patterns if they are to reap the optimum benefits from their infrastructure development efforts.

Threshold Values of Institutional Quality on FDI Inflows: Evidence from Developing Economies

  • LEE, Sunhae
    • The Journal of Industrial Distribution & Business
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    • v.12 no.10
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    • pp.31-41
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    • 2021
  • Purpose: This study estimates the threshold values of institutional quality through investigating the non-linear effect of six sub-indices of Worldwide Governance Indicators on FDI inflows in 34 developing countries in Asia and Eastern Europe over the period from 2000-2017. Research Design, data and methodology: GMM EGLS is employed which does not include the lagged value of the dependent variable as an independent variable. As a proxy for the institutional quality, either one of the six sub-indices of WGI from World Bank or the composite index obtained through a principal component analysis is used in a separate model. Results: An improvement in institutional quality, when the quality stays below a certain threshold level, does not increase FDI inflows, and only when the quality is above the threshold, it can positively influence FDI inflows. The threshold values of political stability and absence of violence, government effectiveness, and rule of law are relatively higher than those of the other dimensions of WGI. Conclusion: Institutional quality of the developing economies of Asia and Eastern Europe has a non-linear effect on FDI inflows. The target countries need to upgrade their institutional quality above the threshold in order to attract more FDIs.

Single mode yield analysis of index-coupled DFB lasers above threshold for various facet reflectivity combinations (Index-coupled DFB 레이저의 여러 가지 양 단면 반사율 조합에 따른 문턱 전류 이상에서 단일 모드 수율 해석)

  • 김상택;전재두;김부균
    • Korean Journal of Optics and Photonics
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    • v.14 no.3
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    • pp.298-305
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    • 2003
  • We have calculated the single mode yield of index-coupled (IC) DFB lasers above threshold for several kL, and facet reflectivity combinations, and investigated the correlation between those results and the single mode yield as a function of f number at the threshold. As a result, there is little correlation between the single mode yield above threshold and the single mode yield as a function of f number at the threshold. The single mode yields above threshold for kL of 0.8 and 1.25 is larger than those for kL, of 2 and 3 due to the spatial hole burning effect. Also, we have investigated the effect of the reflectivity of the AR facet on the single mode yield for AR-HR and AR-CL combinations. For AR-HR combinations, the single mode yield increases as the reflectivity of the AR facet decreases. However, for AR-CL combinations, the reflectivity of the AR facet for the largest single mode yield exists. In the single mode yield calculations for IC DFB lasers in this paper, the single mode yield for kL of 0.8 with AR(1%)-HR combination is largest above threshold.

Threshold Voltage Dependence on Bias for FinFET using Analytical Potential Model

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.8 no.1
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    • pp.107-111
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    • 2010
  • This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.