• Korean Journal of Materials Research
• /
• v.19 no.2
• /
• pp.90-94
• /
• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.17 no.2
• /
• pp.47-51
• /
• 2007

F-doped SiOC : H thin films with low refractive index were deposited on Si wafer and glass substrate by plasma enhanced chemical vapor deposition (PECVD) as a function of rf powers, substrate temperatures, gas rates and their composition flow ratios ($SiH_4,\;CF_4$ and $N_2O$). The refractive index of the F-doped SiOC : H film continuously decreased with increasing deposition temperature and rf power. As $N_2O$ gas flow rate decreased, the refractive index of the deposited films decreased down to 1.3778, reaching a minimum value at rf power of 180W and $100^{\circ}C$ without $N_2O$ gas. The fluorine content of F-doped SiOC : H film increased from 1.9 at% to 2.4 at% as the rf power was increased from 60 W to 180 W, which results in the decrease of refractive index.

• 한국신재생에너지학회:학술대회논문집
• /
• 2006.06a
• /
• pp.158-161
• /
• 2006

Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• Journal of the Korean Ceramic Society
• /
• v.27 no.5
• /
• pp.625-630
• /
• 1990

Cordierite powders were prepared from Si(OC2H5)4, Al(OC3H7i)3 and Mg(OC2H5)2 by the sol-gel method. Two different methods were applied for producing fine and homogeneous powders. One is that Si(OC2H5)4 with a lowr rate of hydrolysis was partially hydrolyzed and then Al(OC3H7i)3 and Mg(OC2H5)2 were mixed and reacted. The other is based on the simultaneous hydrolysis of these metal alkoxides using i-C4H9OH which retards the rate of hydrolysis of Al(OC3H7i)3 and Mg(OC2H5)2. It was confirmed that ifne and homogeneous powders were obtained from both methods. Also these powders were calcined at four different temperatures during two hours. X-ray diffraction patterns show only ${\mu}$-cordierite phase at 1000$^{\circ}C$, ${\mu}$-cordierite and ${\alpha}$-cordierite phases at 1100-1200$^{\circ}C$ and ${\alpha}$-cordierite phase at 1300$^{\circ}C$ respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.6 s.336
• /
• pp.17-22
• /
• 2005

Organic-inorganic hybrid type thin films are the next generation candidates as low-k materials. SiOC films are analyzed the bonding structure by the red and blue chemical shift using the fourier transform infraredspectra. Conventional chemical shift of organic chemistry is a red shift, but hybrid type SiOC films were observed the red and blue shift. The chemical shift originates from the interaction between the C-H bond and high electronegative atoms, and the blue shift in SiOC films is caused by the porosity due to the increase of the electron rich group such as much methyl radicals. The bonding structures of SiOC films are also divided into the Si-O-C cross-link structure and the Si-O-C cage-link structure due to the chemical shifts. The Si-O-C cross-link structure progressed the adhesion attributed to the C-H bond elongation in the reason of the red shift, and the dielectric constant also decreases.

• Journal of the Korean Ceramic Society
• /
• v.24 no.5
• /
• pp.500-506
• /
• 1987

In order to synthesize monodispersed spherical silica fine particles, we investigated the reaction of hydrolysis of 0.05∼4.0 mole Si(OC2H5)4-0.01∼7.60mole NH3 -0.24∼38.40 mole H2O-2.62∼16.88mole C2H5OH systems. The range of the composition of solution which spherical silica particles were formed was enlarged according to an increase in concentration of Si(OC2H5)4. Larger particles were obtained at higher molar ratios of Si(OC2H5)4/C2H5OH, NH3/H2O and H2O/Si(OC2H5)4 and at a lower reaction temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.1 no.1
• /
• pp.92-99
• /
• 1991

The reaction obtaining $SiO_2$ fine particle from $ Si(OC_2H_5)_4$consists of two steps, that is, hydrolysis and polycondensation. Polycondensation is the first order with respect to the concentration of $Si(OC_2H_5)_4$As the concentration of water, ammonia reaction temperature are increased, the reaction rate constant of polycondensation is increased.Silica particles formed are spherical and very uniformly dispersed. The diameters of them are be-tween 0.06 and $0.27\mu\textrm{m}$. As the initial concentration of $Si(OC_2H_5)_4$is decreased and the reaction temper-ature is increased, the diameters of silica particles are reduced. The rate of particles growth derived from time vs, conversion data, is represented as follows; d=a.ln(Xa)+b, where d is the diameter of silica and a, b are constant. The final diameter of silica approaches to the value of b.

• Journal of the Korean Ceramic Society
• /
• v.24 no.1
• /
• pp.23-32
• /
• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.2
• /
• pp.69-72
• /
• 2012

In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapor deposition (PECVD) were investigated through various characterization techniques. The results show that, with an increase in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas the refractive index increases. This is mainly due to the incorporation of organic molecules with $CH_3$ group into the Si-O-Si cage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 $cm^{-1}$ corresponding to Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fast thermal annealing process, the leakage current density of the deposited films is in the order of $10^{-11}$ A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test.

• New & Renewable Energy
• /
• v.2 no.3
• /
• pp.31-36
• /
• 2006

Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.