• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.153-153
• /
• 2010

p-i-n 형 비정질 실리콘 박막 태양전지에서 p층은 창물질(window material)로서 전기 전도도가 크고, 빛 흡수가 적어야한다. p층의 두께가 얇으면 p층 전체가 depletion layer가 되고 충분한 diffusion potential을 얻을 수 없어 open-circuit voltage ($V_{oc}$)가 작아진다. 반대로 p층 두께가 두꺼워지면 빛 흡수가 증가하고, 표면 재결합이 문제가 되어 변환효율이 감소한다. 밴드갭이 큰 물질로 창층을 제작하게 되면 보다 짧은 파장의 입사광이 직접 i층을 비추므로 Short-circuit current ($I_{sc}$) 와 fill factor를 증가시킬 수 있다. 하여 본 연구에서는 기존의 창층으로 사용되는 Boron을 doping한 p-type a-Si:H 대신에 $N_2O$를 첨가한 p-type a-$SiO_x$:H의 $N_2O$ flow rate에 따른 밴드갭의 변화에 관한 연구를 수행하였다. p-type a-$SiO_x$:H Layer는 $SiH_4$, $H_2$, $N_2O$, $B_2H_6$ 가스를 혼합하여 증착하게 되는데 $SiH_4$, 가스와 $H_2$ 가스의 혼합비는 1:20, $B_2H_6$ 농도는 0.5%로 고정 하였으며 $N_2O$의 flow rate을 가변하며 증착하였다. $N_2O$의 가변조건은 5에서 50sccm으로 가변하여 증착하며 일반적으로 사용되는 RF-PECVD (13.56MHz)를 이용하였고 증착 온도는 175도, 전극간의 거리는 40mm, 파워와 압력은 30W, 700mTorr로 고정하여 진행하였다. 전기적 특성을 알아보기 위해 eagle 2000 Glass를 사용하였고 구조적 특성은 p-type wafer를 사용하여 각각 대략 200nm의 두께로 증착하였다. 증착 두께는 Ellipsometry를 이용하였으며 전기 전도도는 Agilent사의 4156c를 구조적특성은 FT-IR을 사용하여 측정하였다. Conductivity(${\sigma}_d$)는 $N_2O$가 증가함에 따라 $8.73\;{\times}\;10^{-6}$에서 $5.06\;{\times}\;10^{-7}$으로 감소하였고 optical bandgap ($E_{opt}$)은 1.71eV에서 2.0eV로 증가함을 알 수 있었다. 또한 reflective index(n)의 경우는 4.32에서 3.52로 감소함을 나타내었다. 기존의 p-type a-Si:H에 비해 상당한 $E_{opt}$을 가지므로 빛 흡수에 의한 손실을 줄임으로서 $V_oc$를 향상 시킬 수 있으며 동시에 짧은 파장에서의 입사광이 직접 i층을 비추므로 $I_{sc}$와 FF를 향상 시킬 수 있으리라 예상된다. 다소 낮은 전도도만 개선한다면 고효율의 박막 태양전지를 제작 할 수 있을 것으로 기대된다.

• Economic and Environmental Geology
• /
• v.5 no.2
• /
• pp.77-86
• /
• 1972

The system NaAlSiO_4-KAlSiO_4-SiO_2-H_2O, Bowen's "Petrogeny's Residua System" of course is extremely important in understanding the phase relationships of igneous and metamorphic rock in the continental crust. The phase relationships in this system, however, have not been completely established in the P-T range above the Mohorovicic discontinuity. They need to be established. In this study, the most probable sequence of P-T curves around a quaternary invariant point(~5Kb/${\sim}635^{\circ}C$) in the system using Schreinemakers' rule, is deduced, essentially on the basis of Morse's(1969a and b) experimental data. Possible modifications of the sequence of the P-T curves considering likely changes of the invariant chemogram are also considered. It is concluded that the sequence of P-T curves around the invariant point (~5Kb/${\sim}635^{\circ}C$) is (L), (Anl), (Or), (V), (Ne) and (Ab) on the P-T projection, where the P-T curve (L) is extended towards lower P-T regions, and the (Anl) curve is extended towards a region of higher temperature and lower pressure from the invariant point respectively.

• Journal of the Korean Ceramic Society
• /
• v.23 no.2
• /
• pp.13-20
• /
• 1986

Composite polycrystals including ${\gamma}$-$6Bi_2O_3$.$SiO_2$ crystal which have needlelike regular structure are useful for the high resolution optical devices. For the purpose of obtaining the composite polycrystals described above the melts of eutectic composition in the three eutectic systems including $6Bi_2O_3$.$SiO_2$ composition were unidirectionally solidified at a rate of 0.05 and 0.25 cm/h under a thermal gradient of 10$0^{\circ}C$/m. Composite polycrystals of relatively regular structure in which needlelike ${\gamma}$-$6Bi_2O_3$.$SiO_2$ crystals were arrayed in parallel with $2Bi_2O_3$.$B_2O_3$ crystal matrix were obtained when the eutectic melt of $6Bi_2O_3$.$SiO_2 -2Bi_2O_3$.$B_2O_3$ system was solidified at a rate of 0.25 cm/h. Partial structural irregularity however was found in the obtained composite polycrystals.

• Journal of the Korean Vacuum Society
• /
• v.11 no.1
• /
• pp.16-21
• /
• 2002

Selective epitaxial growth(SEG) of silicon were performed at low temperature under an ultraclean environment below $1000^{\circ}C$ using ultraclean $Si_2H_6$ and $H_2$ gases ambient in low pressure chemical vapor deposition(LPCVD). As a result of ultraclean processing, epitaxial Si layers with good quality were obtained for uniform and SEG wafer at temperatures range 600~$710^{\circ}C$ and an incubation period of Si deposition only on $SiO_2$ was found. Low-temperature Si selectivity deposition condition and epitaxy on Si were achieved without addition of HCl. The epitaxial layer was found to be thicker than the poly layer deposited over the oxide. Incubation period prolonged for 20~30 sec can be obtained by $O_2$addition. The surface morphologies & cross sections of the deposited films were observed with SEM, The structure of the Si films was evaluated XRD.

• Korean Chemical Engineering Research
• /
• v.50 no.3
• /
• pp.398-402
• /
• 2012

The catalytic performance of some metal oxides in the vapor phase selective oxidation of $H_2S$ in the stream containing ammonia and water was investigated. Among the catalysts tested $Fe_2O_3/SiO_2$ was the most promising catalyst for practical application. It showed higher than 90% $H_2S$ conversion and very small amount of $SO_2$ emission over a temperature range of $240{\sim}280^{\circ}C$. The effects of reaction temperature, $O_2/H_2S$ ratio, amount of ammonia and water vapor on the catalytic activity of $Fe_2O_3/SiO_2$ were discussed to better understand the reaction mechanism. The $H_2S$ conversion showed a maximum at $260^{\circ}C$ and it decreased with increasing temperature over $280^{\circ}C$. With an increase of $O_2/H_2S$ ratio from 0.5 to 4, the conversion was slightly increased, but the selectivity to elemental sulfur was remarkably decreased. The increase of ammonia amount favored the conversion and the selectivity to elemental sulfur with a decrease in $SO_2$ production. The presence of water vapor decreased both the activity and the selectivity to sulfur, but increased the ATS selectivity.

• Journal of the Korean Ceramic Society
• /
• v.48 no.5
• /
• pp.426-432
• /
• 2011

The oxidation behavior of CVD ${\beta}$-SiC was investigated for Very High Temperature Gas-Cooled Reactor (VHTR) applications. This study focused on the surface analysis of the oxidized CVD ${\beta}$-SiC to observe the effect of impurity gases on active/passive oxidation. Oxidation test was carried out at $950^{\circ}C$ in the impurity-controlled helium environment that contained $H_2$, $H_2O$, CO, and $CH_4$ in order to simulate VHTR coolant chemistry. For 250 h of exposure to the helium, weight changes were barely measurable when $H_2O$ in the bulk gas was carefully controlled between 0.02 and 0.1 Pa. Surface morphology also did not change based on AFM observation. However, XPS analysis results indicated that a very small amount of $SiO_2$ was formed by the reaction of SiC with $H_2O$ at the initial stage of oxidation when $H_2O$ partial pressure in the CVD ${\beta}$-SiC surface placed on the passive oxidation region. As the oxidation progressed, $H_2O$ consumed and its partial pressure in the surface decreased to the active/passive oxidation transition region. At the steady state, more oxidation did not observable up to 250 h of exposure.

• Journal of the Korean Vacuum Society
• /
• v.17 no.5
• /
• pp.426-434
• /
• 2008

A space averaged $SiH_4/O_2/Ar$ simulator for the high density inductively coupled plasma sources for $SiH_4/O_2/Ar$ discharge is developed. The developed simulator uses space averaged fluid equations for electrons, positive ions, negative ions, neutral species, and radicals in $SiH_4/O_2/Ar$ plasma discharge, and the electron heating model including the anomalous skin effect. Using the developed simulator, the dependency of the density of charged particles, neutral particles, and radicals, the electron temperature, the plasma resistance, and the power absorption coefficient for the RF power and pressure is calculated.

• The Bulletin of The Korean Astronomical Society
• /
• v.38 no.2
• /
• pp.63.1-63.1
• /
• 2013

We present the results of time monitoring observations of $^{28}SiO$ v = 1, 2, J = 1-0, $^{29}SiO$ v = 0, J = 1-0 and $H_2O$ $6_{16}-5_{23}$ maser lines toward radio Source I in Orion KL. The observations have been performed from 2009 June to 2013 April using the 21m single dish radio telescopes of the Korean VLBI Network. Both SiO and $H_2O$ maser lines were simultaneously obtained at 20 epochs. In particular, the third outburst of $H_2O$ maser emission (the first: 1985, the second: 1998) was detected and the flux density variation curve was obtained. The maximum flux density flared up to an order of $10^5$ Jy during 2012 May-July at peak velocity of 7.33 km $s^{-1}$. Hirota et al. (2011) reported that the bursting maser features are located at 8" from Source I and coincident with the interacting region between the outflow from Source I and a dense ambient gas, Orion Compact Ridge. In the case of SiO masers arising from close to the Source I, the peak emission of the v = 1, J = 1-0 maser line appeared in 2010 April. We are investigating the possible relation between this SiO maser peak emission and the third $H_2O$ maser flaring.

• The Bulletin of The Korean Astronomical Society
• /
• v.42 no.1
• /
• pp.46.3-47
• /
• 2017

We performed simultaneous VLBI observations of H2O 616-523 (22.2 GHz) and SiO v=1, 2, J=1-0 (43.1, 42.8 GHz) and v=1, J=2-1, J=3-2 (86.2, 129.3 GHz) masers toward VX Sagittarius using the Korean VLBI Network (KVN). The astrometrically registered maps of the 22.2 GHz H2O and 43.1, 42.8, 86.2 SiO masers were successfully obtained at two epochs of 2016 February 27 and 2016 March 27 by adopting the Source Frequency Phase Referencing (SFPR) method. In addition we detected 129.3 Ghz SiO maser at second epoch. These results make it possible to determine the accurate position of central star as a dynamical center of 22.2 GHz H2O maser and relative locations of 43.1, 42.8, 86.2, 129.3 GHz SiO masers. In addition, it is possible to investigate the morphological and kinematic variations of clumpy structures from SiO maser to H2O maser regions in future together with the development of asymmetric structure of H2O maser region.

• Applied Chemistry for Engineering
• /
• v.1 no.1
• /
• pp.35-43
• /
• 1990

A series of $TiO_2-SiO_2$catalysts were prepared by coprecipitation from the mixed solution of titanium tetrachloride and sodium silicate. Some of the samples were treated with 1N $H_2SO_4$ and used as modified catalysts. The catalytic activities of modified catalysts were higher than those of unmodified catalysts, and the effect of modification on the catalytic activity was higher for 2 - propanol dehydration than for cumene dealkylation. The catalytic activity of unmodified catalysts was correlated with their acid amount for the above two reactions. As $TiO_2-SiO_2$ catalysts had relatively large amount of weak acid sites and small amount of strong acid sites, the catalytic activity for 2 - propanol dehydration was higher than that for cumene dealkylation. The effect of modification on catalytic activity increased with increasing $TiO_2$content of the catalysts. Actually, $92-TiO_2-SiO_2/SO_4{^2}$had the highest increment in catalytic activity and $10-TiO_2-SiO_2/SO_4{^2}$had the lowest increment for the 2 - propanol dehydration.