• Korean Journal of Materials Research
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• v.16 no.1
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• pp.19-24
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• 2006

ZnO:Al(AZO) films prepared by rf magnetron sputtering on glass substrate and textured by post-deposition chemical etching were applied as front contact and back reflectors for ${\mu}c$-Si:H thin film solar cells. For the front transparent electrode contact, AZO films were prepared at various working pressures and substrate temperature and then were chemically etched in diluted HCl(1%). The front AZO films deposited at low working pressure(1 mTorr) and low temperature ($240^{\circ}C$) exhibited uniform and high transmittance ($\geq$80%) and excellent electrical properties. The solar cells were optimized in terms of optical and electrical properties to demonstrate a high short-circuit current.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.281-284
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• 2007

Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.149-149
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• 2010

The double-layer antireflection (DLAR) coatings have significant advantages over single-layer antireflection (SLAR) coatings. This is because they will be able to cover a broad range of the solar spectrum which would enhance the overall performance of solar cells. Moreover films deposited at high frequency are expected to show excellent and UV-stable passivation in the refractive index that we adopted. In this work, we present a novel DLAR coating using SiNx:H thin films with refractive indices 1.9 and 2.3 as the top and bottom layers. This approach is cost effective when compared to earlier DLAR coatings with two different materials. SiNx:H films were deposited by Plasma enhanced chemical vapor deposition (PECVD) technique using $SiH_4$, $NH_3$ and $N_2$ gases with flow rates 20~80sccm, 200sccm and 85 sccm respectively. The RF power, plasma frequency and substrate temperature for the deposition were 300W, 13.56 MHz and $450^{\circ}C$, respectively. The optimum thickness and refractive indices values for DLAR coatings were estimated theoretically using Macleod simulation software as 82.24 nm for 1.9 and 68.58 nm for 2.3 respectively. Solar cells were fabricated with SLAR and DLAR coatings of SiNx:H films and compared the cell efficacy. SiNx:H> films deposited at a substrate temperature of $450^{\circ}C$ and that at 300 W power showed best effective minority carrier lifetime around $50.8\;{\mu}s$. Average reflectance values of SLAR coatings with refractive indices 1.9, 2.05 and 2.3 were 10.1%, 9.66% and 9.33% respectively. In contrast, optimized DLAR coating showed a reflectance value as low as 8.98% in the wavelength range 300nm - 1100nm.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.120-124
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• 2011

Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiOx formation at the interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.70-70
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• 2011

The prospects of current and coming solar-photovoltaic (PV) technologies are envisioned, arguing this solar-electricity source is beyond a tipping point in the complex worldwide energy outlook. Truly, a revolution in both the technological advancements of solar PV and the deployment of this energy technology is underway; PV is no longer an outlier. The birth of modern photovoltaics (PV) traces only to the mid-1950s, with the Bell Telephone Laboratories' development of an efficient, single-crystal Si solar cell. Since then, Si has dominated the technology and the markets, from space through terrestrial applications. Recently, some significant shift toward technology diversity have taken place. Some focus of this presentation will be directed toward PV R&D and technology advances, with indications of the limitations and relative strengths of crystalline (Si and GaAs) and thin-film (a-Si:H, Si, Cu(In,Ga)(Se,S)2, CdTe). Recent advances, contributions, industry growth, and technological pathways for transformational now and near-term technologies (Si and primarily thin films) and status and forecasts for next-generation PV (nanotechnologies and non-conventional and "new-physics" approaches) are evaluated. The need for R&D accelerating the now and imminent (evolutionary) technologies balanced with work in mid-term (disruptive) approaches is highlighted. Moreover, technology progress and ownership for next generation solar PV mandates a balanced investment in research on longer-term (the revolution needs revolutionary approaches to sustain itself) technologies (quantum dots, multi-multijunctions, intermediate-band concepts, nanotubes, bio-inspired, thermophotonics, ${\ldots}$ and solar hydrogen) having high-risk, but extremely high performance and cost returns for our next generations of energy consumers. This presentation provides insights to the reasons for PV technology emergence, how these technologies have to be developed (an appreciation of the history of solar PV)-and where we can expect to be by this mid-21st century.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.40-47
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• 2014

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.365-365
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• 2010

In this paper, silicon nitride thin films with different silane and ammonia gas ratios were deposited and characterized for the antireflection and passivation layer of high efficiency single crystalline silicon solar cells. As the flow rate of the ammonia gas increased, the refractive index decreased and the band gap increased. Consequently, the transmittance increased due to the higher band gap and the decrease of the defect states which existed for the 1.68 and 1.80 eV in the SiNx films. The reduction in the carrier lifetime of the SiNx films deposited by using a higher $NH_3/SiH_4$ flow ratio was caused by the increase of the interface traps and the defect states in/on the interface between the SiNx and the silicon wafer. The silicon and nitrogen rich films are not suitable for generating both higher carrier lifetimes and transmittance. These results indicate that the band gap and the defect states of the SiNx films should be carefully controlled in order to obtain the maximum efficiency for c-Si solar cells.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.561-565
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• 2012

Due to their unique combination of properties, Si-based ceramics, such as silicon carbide (SiC), silicon nitride ($Si_3N_4$) and silicon oxide ($SiO_2$ as fused silica), have a range of industrial applications in fields such as the chemical industry, aluminum manufacturing, oil and gas production and solar cell production. For each materials group, examples of typical applications from various industry sectors are presented while taking into account the property fingerprint.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.278-280
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• 2007

a-Si:H/${\mu}$c-Si:H 적층형 태양전지의 효율향상을 위해 상부전지와 하부전지간의 접합특성은 매우 중요하다. 본 연구에서는, 접합특성을 향상하기 위하여 아몰퍼스 보다 전도도가 높은 마이크로화된 n층 또는 ZnO:Al을 중간층으로 삽입한 태양전지를 제조하였으며, 그 특성을 전기적, 광학적 방법으로 분석하였다. 전기적 특성에서, 상부전지 n층에 아몰퍼스를 적용한 태양전지의 경우, 상부전지와 하부전지 간의 직렬저항이 $500{\Omega}-cm^2$ 이상으로 높게 측정되었고, 이에 따라 AM 1.5 상태의 I-V 특성에서 비틀림 현상이 발생하여 곡선인자(Fill Factor : FF)가 낮게 측정되었다. 이에 반하여, 상부전지 n층에 마이크로층을 적용하거나, ZnO:Al 중간층을 삽입한 시편의 경우, 상부전지와 하부전지간의 직렬저항이 $1{\Omega}-cm^2$ 이하로 감소하였으며, 이와 같은 계면간의 접합특성 향상으로 I-V특성에서 비틀림 현상이 사라지고, FF가 70% 까지 증가하였다. 또한, 마이크로층과 ZnO:Al 중간층을 동시에 적용한 태양전지의 경우, FF가 75%까지 가장 높게 증가하였다. 광학적 특성의 경우, 같은 두께의 아몰퍼스 n층에 비하여 마이크로 n층이 투과도는 더 높게, 반사도는 낮게 측정되었으며, 이는 하부전지의 단락전류 (Short circuit current : Jsc)를 높여줄 것으로 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.430-430
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• 2008

Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.