• 제목/요약/키워드: a-Si/c-Si

검색결과 7,099건 처리시간 0.036초

용융함침법에 의한 반응소결 SiC/SiC 복합재료의 특성 평가 (Property Evaluation of Reaction Sintered SiC/SiC Composites Fabricated by Melt Infiltration Process)

  • 이상필;신윤석
    • 대한기계학회논문집A
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    • 제31권2호
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    • pp.205-210
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    • 2007
  • SiC/SiC composites and monolithic SiC materials have been fabricated by the melt infiltration process, through the creation of crystallized SiC phase by the chemical reaction of C and Si. The reinforcing material used in this system was a braided Hi-Nicalon SiC fiber with double interphases of BN and SiC. The microstructures and the mechanical properties of RS-SiC based materials were investigated through means of SEM, TEM, EDS and three point bending test. The matrix morphology of RS-SiS/SiC composites was greatly composed of the SiC phases that the chemical composition of Si and C is different. The TEM analysis showed that the crystallized SiC phases were finely distributed in the matrix region of RS-SiC/SiC composites. RS-SiC/SiC composites also represented a good flexural strength and a high density, accompanying a pseudo failure behavior.

Sol-gel 법으로 합성된 SiC-C 복합분말을 사용하여 제조된 Si-SiC의 기계적 특성 및 전기저항 특성 (Mechanical and Electrical Properties of Si-SiC Fabricated Using SiC-C Composite Powders Synthesized by Sol-gel Process)

  • 윤성일;조경선;염미래;임대순;박상환
    • 한국세라믹학회지
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    • 제51권5호
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    • pp.459-465
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    • 2014
  • In this study, Si-SiC composites were fabricated using a Si melt infiltration method using ${\beta}$-SiC/C composite powders synthesized by the carbothermal reduction of $SiO_2-C$ precursors made from a TEOS and a phenol resin. The purity of the synthesized SiC-C composite powders was higher than 99.9993 wt% and the average particle size varied from 4 to $6{\mu}m$ with increasing carbon contents of the $SiO_2-C$ precursors. It was found that the Si-SiC composites fabricated in this study consist of ${\beta}$-SiC and residual Si, without any trace of ${\alpha}$-SiC. The 3-point bending strengths of the fabricated Si-SiC composites were measured and found to be higher than 550 MPa, although the density of the fabricated Si-SiC composite was less than $2.9g/cm^3$. The bending strengths and the densities of the fabricated Si-SiC composites were found to decrease with increasing C/Si mole ratios in the SiC-C composite powders. The specific resistivities of the Si-SiC composites fabricated using the SiC-C composite powders were less than $0.018{\Omega}cm$. With increasing C content in the SiC-C composite powders used for the fabrication of Si-SiC composites, the specific resistivity of the Si-SiC composites was found to slightly increase from 0.0157 to $0.018{\Omega}cm$.

Current Status of $SiC_{f}/SiC$ Composites Material in Fusion Reactor

  • Yoon, Han-Ki;Lee, Sang-Pill
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회A
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    • pp.166-171
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    • 2007
  • The characterization of monolithic SiC and SiCf/SiC composite materials fabricated by NITE and RS processes was investigated in conjunction with the detailed analysis of their microstructure and density. The NITE-SiC based materials were fabricated, using a SiC powder with average size of 30 nm. RS- SiCf/SiC composites were fabricated with a complex slurry of C and SiC powder. In the RS process, the average size of starting SiC particle and the blending ratio of C/SiC powder were $0.4\;{\mu}m$ and 0.4, respectively. The reinforcing materials for /SiC composites were BN-SiC coated Hi-Nicalon SiC fiber, unidirectional or plain woven Tyranno SA SiC fiber. The characterization of all materials was examined by the means of SEM, EDS and three point bending test. The density of NITE-SiCf/SiC composite increased with increasing the pressure holding time. RS-SiCf/SiC composites represented a great decrease of flexural strength at the temperature of $1000\;^{\circ}C.$

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용융 Si-C-SiC계에서 $\beta$-SiC 생성기구 ($\beta$-SiC Formation Mechanisms in Si Melt-C-SiC System)

  • 서기식;박상환;송휴섭
    • 한국세라믹학회지
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    • 제36권6호
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    • pp.655-661
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    • 1999
  • ${\beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${\beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${\beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${\beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${\beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.

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다공성 SiC-Si 복합체의 전기비저항에 미치는 Si 첨가량의 영향 (Effect of Si Addition on Resistivity of Porous SiC-Si Composite for Heating Element Application)

  • 전신희;이원주;공영민
    • 한국재료학회지
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    • 제25권5호
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    • pp.258-263
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    • 2015
  • To fabricate porous SiC-Si composites for heating element applications, both SiC powders and Si powders were mixed and sintered together. The properties of the sintered SiC-Si body were investigated as a function of SiC particle size and/or Si particle contents from 10 wt% to 40 wt%, respectively. Porous SiC-Si composites were fabricated by Si bonded reaction at a sintering temperature of $1650^{\circ}C$ for 80 min. The microstructure and phase analysis of SiC-Si composites that depend on Si particle contents were characterized using scanning electron microscope and X-ray diffraction. The electrical resistivity of SiC-Si composites was also evaluated using a 4-point probe resistivity method. The electrical resistivity of the sintered SiC-Si body sharply decreased as the amount of Si addition increased. We found that the electrical resistivity of porous SiC-Si composites is closely related to the amount of Si added and at least 20 wt% Si are needed in order to apply the SiCSi composites to the heating element.

반응소결법에 의한 SiC/SiC 복합재료의 제조 (Fabrication of SiC/SiC Composites by Reaction Sintering Process)

  • 이상필;윤한기
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 추계학술대회논문집A
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    • pp.27-31
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    • 2001
  • Hi-Nicalon SiC fiber reinforced SiC composites (SiC/SiC) have been fabricated by the reaction sintering process. Braided Hi-Nicalon SiC fiber with double interphases of BN and SiC was used in this composite system. The microstructures and the mechanical properties of reaction sintered SiC/SiC composites were investigated through means of electron microscopies (SEM, TEM, EDS) and bending tests. The matrix morphology of reaction sintered SiC/SiC composites was composed of the SiC phases that the composition of the silicon and the carbon is different. The TEM analysis showed that the residual silicon and the unreacted carbon were finely distributed in the matrix region of reaction sintered SiC/SiC composites. Reaction sintered SiC/SiC composites also represented proper flexural strength and fracture energy, accompanying the noncatastrophic failure behavior.

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SiNx/Si 구조를 이용한 SiC 박막성장 (Growth of SiC film on SiNx/Si Structure)

  • 김광철;박찬일;남기석;임기영
    • 한국재료학회지
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    • 제10권4호
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    • pp.276-281
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    • 2000
  • Si(111) 표면을 NH$_3$분위기에서 실리콘질화물(SiNx)로 변형시킨 후 탄화규소(silicon carbide, SiC) 박막을 성장하였다. 질화시간이 증가함에 따라 SiC 박막 두께가 감소함을 관찰하였다. 또한 성장변수에 따라 SiC/Si 계면에서 결정결함인 틈새를 없앨 수 있었다. 100nm, 300nm, 500nm의 SiNx/Si 기판 위에 SiC 박막을 성장시켰다. 성장된 SiC 박막들은 모두 [111]면을 따라 성장되었고, SiC 결정들이 원주형 낟알로 성장되었다. SiC/SiNx 계면에서 void를 관찰할 수 없었다. 이러한 실험 결과는 SOI 구조의 산화규소를 SiNx로 대체함으로써 SiC 소자 제작에 응용될 수 있는 방향을 제시하고 있다.

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나노입자 혼합 복합슬러리를 이용한 반응소결 SiC 재료의 제조 (Fabrication of Reaction Sintered SiC Materials by Complex Slurry with Nano Size Particles)

  • 이상필
    • 대한기계학회논문집A
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    • 제29권3호
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    • pp.425-431
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    • 2005
  • The efficiency of complex slurry preparation route for developing the high performance SiC matrix of $RS-SiC_{f}/SiC$ composites has been investigated. The green bodies for RS-SiC materials prior to the infiltration of molten silicon were prepared with various C/SiC complex slurries, which associated with both the sizes of starting SiC particles and the blending conditions of starting SiC and C particles. The characterization of Rs-SiC materials was examined by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, the process optimization is also discussed. The flexural strength of Rs-SiC materials greatly depended on the content of residual Si. The decrease of starting SiC particle size in the C/SiC complex slurry was effective for improving the flexural strength of RS-SiC materials.

SiC 장섬유 강화 SiC 기지 복합재료의 고온강도 특성 (High Temeprature Strength Property of Continuous SiC Fiber Reinforced SiC Matrix Composites)

  • 신윤석;이상필;이진경;이준현
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2005년도 춘계학술발표대회 논문집
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    • pp.102-105
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    • 2005
  • The mechanical properties of $SiC_f/SiC$ composites reinforced with continuous SiC fiber have been investigated in conjunction with the detailed analysis of their microstructures. Especially, the effect of test temperature on the characterization of $SiC_f/SiC$ composites was examined. In this composite system, a braiding Hi-Nicalon SiC fibric was selected as a reinforcement. $SiC_f/SiC$ composites have been fabricated by the reaction sintering process, using the complex matrix slurry with a constant composition ratio of SiC and C particles. The characterization of $RS-SiC_f/SiC$ composites was investigated by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, the high temperature applicability of $RS-SiC_f/SiC$ composites was discussed.

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솔-젤 공정으로 제조된 SiO2-C 복합 전구체를 사용하여 열탄소환원법에 의한 β-SiC 분말 합성에 금속 Si 첨가가 미치는 영향 (Effects of Metallic Silicon on the Synthsis of β-SiC Powders by a Carbothermal Reduction Using SiO2-C Hybrid Precursor Fabricated by a Sol-gel Process)

  • 조영철;염미래;윤성일;조경선;박상환
    • 한국세라믹학회지
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    • 제50권6호
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    • pp.402-409
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    • 2013
  • The objective of this study was to develop a synthesis process for ${\beta}$-SiC powders to reduce the synthesis temperature and to control the particle size and to prevent particle agglomeration of the synthesized ${\beta}$-SiC powders. A phenol resin and TEOS were used as the starting materials for the carbon and Si sources, respectively. $SiO_2$-C hybrid precursors with various C/Si mole ratios were fabricated using a conventional sol-gel process. ${\beta}$-SiC powders were synthesized by a carbothermal reduction process using $SiO_2$-C hybrid precursors with various C/Si mole ratios (1.6 ~ 2.5) fabricated using a sol-gel process. In this study, the effects of excess carbon and the addition of Si powders to the $SiO_2$-C hybrid precursor on the synthesis temperature and particle size of ${\beta}$-SiC were examined. It was found that the addition of metallic Si powders to the $SiO_2$/C hybrid precursor with excess carbon reduced the synthesis temperature of the ${\beta}$-SiC powders to as low as $1300^{\circ}C$. The synthesis temperature for ${\beta}$-SiC appeared to be reduced with an increase of the C/Si mole ratio in the $SiO_2$-C hybrid precursor by a direct carburization reaction between Si and excess carbon.