• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.154-162
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• 1998

A planar Bi-Sb multijunction thermal converter with high thermal sensitivity and small ac-dc transfer error has been fabricated by preparing the bifilar thin film Pt-heater and the hot junctions of thin film Bi-Sb thermopile on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-diaphragm, which functions as a thermal isolation layer, and the cold junctions on the dielectric membrane supported with the Si-substrate, which acts as a heat sink, and its ac-dc transfer characteristics were investigated with the fast reversed dc method. The respective thermal sensitivities of the converter with single bifilar heater were about 10.1 mV/mW and 14.8 mV/mW in the air and vacuum, and those of the converter with dual bifilar heater were about 5.1 mV/mW and 7.6 mV/mW, and about 5.3 mV/mW and 7.8 mV/mW in the air and vacuum for the inputs of inside and outside heaters, indicating that the thermal sensitivities in the vacuum, where there is rarely thermal loss caused by gas, are higher than those in the air. The ac-dc voltage and current transfer difference ranges of the converter with single bifilar heater were about ${\pm}1.80\;ppm$ and ${\pm}0.58\;ppm$, and those of the converter with dual bifilar heater were about ${\pm}0.63\;ppm$ and ${\pm}0.25\;ppm$, and about ${\pm}0.53\;ppm$ and ${\pm}0.27\;ppm$, respectively, for the inputs of inside and outside heaters, in the frequency range below 10 kHz and in the air.

• Biomolecules & Therapeutics
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• v.19 no.2
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• pp.231-236
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• 2011

The aim of this study was to investigate the effect of charge carrier lipid on the skin penetration, retention, and hair growth of topically applied finasteride-containing liposomes. Finasteride-containing liposomes were prepared by traditional thin film hydration method using Phospholipon$^{(R)}$ 85 G and cholesterol with or without charge carrier lipid (1,2 dimyristoyl-sn-glycero-3-phosphate or 1,2-dioleoyl-trimethylammonium-propane for anionic and cationic charge, respectively). Freshly prepared finasteride-containing liposome suspension was applied on the hairless mouse skin, and skin penetration and retention were measured using Keshary-Chien diffusion cell. Non-liposomal formulation (ethanol 10% solution containing 0.5 mg/ml of FNS) was also used as a control. The amount of finasteride in the diffusion cell and mouse skin was measured by HPLC. The hair growth was evaluated using depilated male C57BL/6N mice. Mean particle size of all finasteride-containing liposomes was less than a micron, and polydispersity index revealed size homogeneity. Skin penetration and retention studies showed that significantly less amount of finasteride was penetrated when applied as anionic liposome while more amount of the drug was retained. Specifically, in liposome prepared with 10% anionic charge carrier lipid, penetration was 12.99 ${\mu}g/cm^2$ while retention was 79.23 ${\mu}g/cm^2$ after 24 h of application. In hair growth study, finasteride-containing anionic liposomes showed moderate efficacy, but the efficacy was not found when applied as cationic liposomes. In conclusion, topical application of finasteride using anionic liposome formulation appears to be useful option for the treatment of androgenetic alopecia to avoid systemic side effects of the drug.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.110-113
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• 2011

In this paper, we propose a new method for the fabrication of GaN microstructures formed only on the vertex of GaN pyramid by using of metal catalysts. GaN pyramidal structures were selectively grown on 3 ${\mu}m$ $SiO_2$ dot patterns followed by thin film deposition of Au and Cr only on the vertex area of the GaN pyramids with precisely controlled photolithography. After the metal deposition, the samples were loaded in the MOVPE reactor for the growth of GaN microstructures for 10 minutes. Temperature for the growth of the GaN microstructures was changed from $650^{\circ}C$ to $750^{\circ}C$. Rod type GaN microstructures were grown in the direction of vertical to the six {1-101} facets and the shape of the GaN microstructures was changed depend on the type of metal.

• Solar Energy
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• v.20 no.2
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• pp.43-54
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• 2000

We prepared and characterized $Cu(In_{1-x}Ga_x)Se_2$(CIGS) films using a elemental co-evaporation method for absorbing layer of high efficiency thin film solar cells. The CIGS films deposited on a soda-lime glass exhibited low resistivity because of higher carrier concentration. Na was accumulated at the CIGS surface and the 0 and Se were also accumulated at the surface, suggesting that oxidation is a driving force of Na accumulation. The structure of CIGS film was modified or a secondary phase was formed in the Cu-poor CIGS bulk films probably due to the incorporation of Na into Cu vacancy sites. As the Ga/(In+Ga) ratio increased, the diffraction peaks of $Cu(In_{1-x}Ga_x)Se_2$ films were shifted to larger angle and splitted, and the grain size of $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films became smaller. All $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films showed the p-type conductivity regardless of the Ga/(In+Ga) ratio. Ag/n-ZnO/i-ZnO/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo solar cells were fabricated. The currently best efficiency in this study was 14.48% for $0.18cm^2$ area ($V_{oc}=581.5mV,\;J_{sc}=34.88mA$, F.F=0.714).

• Membrane and Water Treatment
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• v.9 no.1
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• pp.43-51
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• 2018

Hollow fiber (HF) membranes are gaining wide interest over flat membranes due to their compaction and high area to surface volume ratio. This work addresses the fabrication of HF from polysulfone (PS) and polyethersulfone (PES) using N-methylpyrrolidone (NMP) as solvent in addition to other additives to achieve desired characteristics. The semi-pilot spinning system includes jacketed vessel, four spinneret block, coagulation and washing baths in addition to dryer and winder. Different parameters affecting dry-wet spinning phase inversion process were investigated. Dope compositions of PES, NMP and polyvinyl pyrrolidone (PVP) of varying molecular weights as additive were addressed. Some critical parameters of importance were also investigated. Those include dope flow rate, air gap, coagulation & washing baths and drying temperatures. The measured dope viscosity was in the range from 1.7 to 36.5 Pa.s. Air gap distance was adjusted from 20 to 45 cm and coagulation bath temperature from 20 to $46^{\circ}C$. The HF membranes were characterized by scanning electron microscope (SEM), atomic force microscope (AFM) and mechanical properties. Results indicated prevalence of finger like structure and average surface roughness from about 29 to 78.3 nm. Profile of stress strain characteristics revealed suitability of the fibers for downstream interventions for fabrication of thin film composite membrane. Different empirical correlations were formulated which enable deeper understanding of the interaction of the above mentioned variables. Data of pure water permeability (PWP) confirmed that the fabricated samples fall within the microfiltration (MF)-ultrafiltration (UF) range of membrane separation.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.62-70
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at $45^{\circ}C$. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter $a_o$ was $5.6687\;{\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293 K. The band gap given by the transmission edge changed from $2.700{\underline{5}}\;eV$ at 293 K to $2.873{\underline{9}}\;eV$ at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, ${\Gamma}_8$ and ${\Gamma}_7$ and to conduction band ${\Gamma}_6$ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting ${\Delta}so$ is $0.098{\underline{1}}\;eV$. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.061{\underline{2}}\;eV$ and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be $0.017{\underline{2}}\;eV$, $0.031{\underline{0}}\;eV$, respectively.

• Progress in Superconductivity
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• v.12 no.2
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• pp.118-123
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• 2011

The properties of $2^{nd}$ generation high temperature superconducting wire, coated conductor strongly depend on the quality of superconducting oxide layer and property of metal substrate is one of the most important factors affecting the quality of coated conductor. Good mechanical and chemical stability at high temperature are required to maintain the initial integrity during the various process steps required to deposit several layers consisting coated conductor. And substrate need to be nonmagnetic to reduce magnetization loss for ac application. Hastelloy and stainless steel are the most suitable alloys for metal substrate. One of the obstacles in using stainless steel as substrate for coated conductor is its difficulties in making smooth surface inevitable for depositing good IBAD layer. Conventional method involves several steps such as electro polishing, deposition of $Al_2O_3$ and $Y_2O_3$ before IBAD process. Chemical solution deposition method can simplify those steps into one step process having uniformity in large area. In this research, we tried to improve the surface roughness of stainless steel(SUS310). The precursor coating solution was synthesized by using yttrium complex. The viscosity of coating solution and heat treatment condition were optimized for smooth surface. A smooth amorphous $Y_2O_3$ thin film suitable for IBAD process was coated on SUS310 tape. The surface roughness was improved from 40nm to 1.8 nm by 4 coatings. The IBAD-MgO layer deposited on prepared substrate showed good in plane alignment(${\Delta}{\phi}$) of $6.2^{\circ}$.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

• Journal of Environmental Science International
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• v.14 no.2
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• pp.221-230
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• 2005

Catalytic wet oxidation of trichloroethylene (TCE) in water has been conducted using $TiO_2-supported$ cobalt oxides at $36^{\circ}C$ with a weight hourly space velocity of $7,500\;h^{-1}.\;5\%\;CoO_x/TiO_2$, prepared by using an incipient wetness technique, might be the most promising catalyst for the wet oxidation although it exhibited a transient behavior in time on-stream activity. Not only could the bare support be inactive for the wet decomposition reaction, but no TCE removal also occurred by the process of adsorption on $TiO_2$ surface. The catalytic activity was independent of all particle sizes used, thereby representing no mass transfer limitation in intraparticle diffusion. XPS spectra of both fresh and used Co surfaces gave different surface spectral features for each $CoO_x,\;Co\;2P_{3/2}$ binding energy for Co species in the fresh catalyst appeared at 781.3 eV, which is very similar to the chemical states of $CoTiO_x$ such as $CO_2TiO_4\;and\;CoTiO_3$. The used catalyst exhibited a 780.3-eV main peak with a satellite structure at 795.8 eV. Based on XPS spectra of reference Co compound, the TCE-exposed Co surfaces could be assigned to be in the form of mainly $Co_3O_4$. XRD patterns for $5\%\;CoO_x/TiO_2$ catalyst indicated that the phase structure of Co species in the catalyst even before reaction is quite comparable to the diffraction lines of external $Co_3O_4$ standard. A model structure of $CoO_x$ present predominantly on titania surfaces would be $Co_3O_4$, encapsulated in thin-film $CoTiO_x$ species consisting of $Co_2TiO_4$ and $CoTiO_3$, which may be active for the decomposition of TCE in a flow of water.

• Polymer(Korea)
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• v.34 no.4
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• pp.313-320
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• 2010

New cinnamate group-containing copolymers for a self-curable, humidity-sensitive polyelectrolyte and polymeric anchoring agents were prepared by copolymerization of [2-[(methacryloyloxy) ethyl]dimethyl]propyl ammonium bromide(MEPAB), methyl methacrylate(MMA), 3-(trimethoxysilyl) propyl methacrylate(TMSPM) and 2-(cinnamoyloxy)ethyl methacrylate(CEMA). Photocrosslinkable copolymer composed of MEPAB/MMA/TMSPM/CEMA＝70/20/0/10 were used for humidity-sensitive membrane, and those of 50/0/20/30 and 0/0/50/50 were used for polymeric anchoring agents. 3- (Triethoxysilyl)propyl cinnamate(TESPC) was also used as a surface-pretreating agent for the comparison of capability of attachment of polyelectrolyte to the electrode surface with polymeric photocurable silanecoupling agents. Pretreatment of the electrode substrate with anchoring agents was performed to form a cinnamate thin film on the electrode through covalent bonds. When the sensors were irradiated with UV light, the anchoring of a polyelectrolyte into the substrate was carried out via the [2$\pi$+2$\pi$] cycloaddition. The resulting sensors using polymeric anchoring agents and TESPC showed water durability with increase of resistance by 60~85%, which is corresponding to the reduction of 2.25~3.15%RH, after soaking in water for 24 h. They showed good hysteresis (-0.2%RH), response time (90 sec) and long-term stability at high temperature and humidity.