• 한국진공학회지
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• 제9권4호
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• pp.382-388
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• 2000

ECR-PECVD 방법을 이용하여 ECR power, $CH_4/H2$ 가스 혼합비와 유량, 증착시간, negative DC self bias 전압 등을 변화 시켜가면서 수소가 함유된 비정질 탄소 박막을 제조하고, 증착조건에 따른 박막의 결합구조 변화를 FTIR로 분석하였다. a-C:H 박막에 대한 FTIR 스팩트럼의 흡수 peak들은 2800~3000 $\textrm{cm}^{-1}$ 영역에서 관측되었으며, 대부분 $sp^3$ 결합을 하고있고 일부 $sp^2$ 결합구조가 존재함을 알 수 있었다. $CH_4/H_2$ 가스 혼합비와 유량의 미소 변화는 a-C:H 박막의 탄소와 수소의 결합구조에 큰 영향을 미치지 않았으며, 증착 시간이 증가할수록 탄소와 수소 원자들의 결합구조가 $CH_3$ 구조로부터 $CH_2$ 나 CH 구조로 변하고 있음을 확인하였다. 또한, bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 현상도 확인할 수 있었으며, 증착조건에 따른 a-C:H 박막의 결합구조 분석을 토대로 산업에 응용할 수 있는 높은 경도와 밀착성을 갖는 박막을 ECR-PECVD 방법으로 제조할 수 있음을 확인하였다.

• Journal of Electrical Engineering and Technology
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• 제6권6호
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• pp.836-841
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• 2011

Plasma polymerized methyl methacrylate (ppMMA) thin films were deposited by plasma polymerization technique with different plasma powers and subsequently thermally treated at temperatures of 60 to $150^{\circ}C$. To find a better ppMMA preparation technique for application to organic thin film transistor (OTFT) as dielectric layer, the chemical composition, surface morphology, and electrical properties of ppMMA were investigated. The effect of ppMMA thin-film preparation conditions on the resulting thin film properties were discussed, specifically O-H site content in the pMMA, dielectric constant, leakage current density, and hysteresis.

• 한국정보통신학회논문지
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• 제10권9호
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• pp.1641-1647
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• 2006

나노입자 크기를 가진 얇은 $SnO_2$ 박막을 이용하여 CO 및 $H_2S$에 대한 우수한 감도를 가지는 복합 마이크로 가스센서 어레이를 제작하였다. 나노입자의 박막을 만들기 위해서 약 $2500{\AA}$ 두께의 $SnO_2,\;SnO_2(+Pt),\;SnO_2(+CuO)$ 막을 셰도우마스크를 사용하여 형성 한 후, 이를 $600{\sim}800^{\circ}C$의 온도에서 산화하므로서 나노입자의 $SnO_2$ 모물질의 가스감지 박막을 형성하였다. 실리콘 기판의 마이크로센서의 형태로 제작된 $SnO_2(Pt)$ 및 $SnO_2(+CuO)$ 가스센서는 각각 CO 및 $H_2S$ 가스에 대한 매우 우수한 감도를 나타내는 것을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.985-988
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• 2008

Metal induced crystallization of a-Si with a source of Ni/Si oxide was studied. Its mechanism to induce crystallization was discussed. It was found that new source behaves an effect of self-released nickel and reducing nickel residua, so can provide a wider process tolerance; improve the uniformity and stability of TFTs.

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.115-118
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• 2017

Highly photosensitive and wide bandgap amorphous silicon oxide (a-$SiO_x$:H) films were developed at low temperature ranges ($100{\sim}150^{\circ}C$) with employing plasma-enhanced chemical vapor deposition by optimizing $H_2/SiH_4$ gas ratio and $CO_2$ flow. Photosensitivity more than $10^5$ and wide bandgap (1.81~1.85 eV) properties were used for making the a-$SiO_x$:H thin film solar cells, which exhibited a high open circuit voltage of 0.987 V at the substrate temperature of $100^{\circ}C$. In addition, a power conversion efficiency of 6.87% for the cell could be improved up to 7.77% by employing a new n-type nc-$SiO_x$:H/ZnO:Al/Ag triple back-reflector that offers better short circuit currents in the thin film photovoltaic devices.

• 한국대기환경학회지
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• 제18권3호
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• pp.223-230
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• 2002

Titania photocatalytic oxidation reactors were studied to investigate degradation efficiencies of hydrocarbons. In general, it is well known phenomena that thin layered titania oxidizes most of hydrocarbons to carbon dioxide and water under UV light. In this study, degradation efficiencies were measured due to changes in reactor structures, UV sources, the number of titania coatings, and various hydrocarbon chemicals. It was proven that gas degradation efficiencies are related to such factors as UV transmittance of coating substance, collision area of surface, and gas flow rate. For packing type annular reactor, about 98% degradation efficiency was achieved for achieved for propylene of 500 ppm level at a flow rate of 100 ml/min. Several gases were also tested for double-coated titania thin film under the condition of continuous flow of 100 ml/min and 365 nm UV source. It was shown that degradation efficiencies were decreasing in the order: $C_3$ $H_{6}$, n-C$_4$ $H_{10}$, $C_2$ $H_4$, $C_2$ $H_2$, $C_{6}$ $H_{6}$ and $C_2$ $H_{6}$./. 6/./.

• Current Photovoltaic Research
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• 제2권3호
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• pp.103-109
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• 2014

Highly efficient hydrogenated nanocrystalline silicon (nc-Si:H) thin-film solar cells were prepared on flexible stainless steel substrates using plasma-enhanced chemical vapor deposition. To enhance the performance of solar cells, material properties of back reflectors, n-doped seed layers and wide bandgap nc-SiC:H window layers were optimized. The light scattering efficiency of Ag back reflectors was improved by increasing the surface roughness of the films deposited at elevated substrate temperatures. Using the n-doped seed layers with high crystallinity, the initial crystal growth of intrinsic nc-Si:H absorber layers was improved, resulting in the elimination of the defect-dense amorphous regions at the n/i interfaces. The nc-SiC:H window layers with high bandgap over 2.2 eV were deposited under high hydrogen dilution conditions. The vertical current flow of the films was enhanced by the formation of Si nanocrystallites in the amorphous SiC:H matrix. Under optimized conditions, a high conversion efficiency of 9.13% ($V_{oc}=0.52$, $J_{sc}=25.45mA/cm^2$, FF = 0.69) was achieved for the flexible nc-Si:H thin-film solar cells.

• 센서학회지
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• 제18권4호
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• pp.307-310
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS(Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 $\sim$ 90 nm was achieved at 7.1 mA/cm$^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 cm$^{-1}$. PL shows the band gap enegry of thin film(2.5 eV) and porous 3C-SiC(2.7 eV).

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.151-151
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• 1997

• 한국세라믹학회지
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• 제39권9호
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• pp.829-834
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• 2002

$Er(NO_3)_3{\codt}5H_2O,\;Mn(CH_3CO_2)_2{\cdot}4H_2O$를 출발원료로 사용하여 졸-겔 법으로 Si(100) 기판 위에 코팅된 $ErMnO_3$ 박막의 강유전 특성에 관하여 연구하였다. $ErMnO_3$ 박막은 800$^{\circ}C$에서 결정화가 시작되었으며, (001)로 우선 배향된 $ErMnO_3$ 박막을 얻을 수 있었다. 본 실험에서 800$^{\circ}C$에서 1 h 열처리하여 얻은 $ErMnO_3$ 박막은 1∼100 KHz의 주파수 범위에서 유전 상수(k)는 26, 유전 손실(tan ${\delta}$)은 0.032의 값을 나타내었으며, 이때 $ErMnO_3$ 박막의 입자 크기는 10∼30 nm이었다. 강유전 특성은 (001) 배향성이 증가할수록 잔류 분극 값이 증가하였으며, 800$^{\circ}C$에서 1시간 열처리하여 $ErMnO_3$ 박막의 잔류 분극 값($P_r$)은 400 nC/$cm^2$를 나타내었다. 또한 열처리 시간이 증가할수록 치밀하고 균일한 박막을 얻어 낮은 항전계 ($E_c$) 값을 가졌다.