• 제목/요약/키워드: a-C/B:H film

검색결과 279건 처리시간 0.031초

비정질 탄소박막의 트라이볼로지 특성에 미치는 플라즈마 밀도의 영향 (Effect of Plasma Density on the Tribological Properties of Amorphous Carbon Thin Films)

  • 박용섭;이종덕;홍병유
    • 한국진공학회지
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    • 제20권5호
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    • pp.333-338
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    • 2011
  • 본 연구에서는 전자석 코일 마그네트론 소스를 가지는 비대칭 마그네트론 스퍼터링 장치를 이용하여 보호 코팅 소재로 사용되어지는 비정질 탄소박막을 제작하였다. 내부 전자석 코일의 전류를 고정하고 외부 전자석 코일의 전류를 다양하게 변화시켜 탄소 박막을 제작하였고, 제작되어진 박막들의 경도, 마찰계수, 접착력, 표면 거칠기 등의 트라이볼로지 특성들을 측정하였고, 라만과 HRTEM을 이용하여 구조적 특성을 평가하였으며, 이들 상호간에 관계를 규명하였다. 결과로서, 제작되어진 탄소박막의 경도, 마찰계수, 접착 특성은 외부 전자석 코일 전류가 증가함에 따라 향상되었으며, 이러한 결과는 박막내에 결합력이 강한 $sp^2$ 결합과 클러스터의 형성과 관련된다. 전자석 코일 전류의 증가는 전자와 이온 밀도의 증가시키고, 기판에서 이온의 충돌의 증가와 기판온도 향상을 야기한다. 이러한 현상의 박막내에 증가되어진 $sp^2$ 결합과 클러스터들의 형성은 탄소박막의 트라이볼로지 특성 향상에 기여하였다.

Sol-gel 압전체 박막을 이용한 각속도 센서에 대한 연구 (Study on Angular Rate Sensor using Sol-Gel PZT thin film)

  • Lee, S. H.;R. Meada;M. Esashi
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.34-34
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    • 2003
  • Piezoelectric or magnetostrictive materials, known as smart materials, have been researched widely for sensors or actuators in micro system technology. In our research, thick sol-gel lead zirconate titanate(Pb(Zr$\sub$1-x/Ti$\sub$x/)O$_3$) films were fabricated and their characteristics were investigated f3r angular rate sensor applications. The thickness of the PZT films is 1.5${\mu}$m, which is required by a vibration angular rate sensor for a good actuation and sensing. The remnant polarization of the PZT flms is 12.0 ${\mu}$C/$\textrm{cm}^2$. The electromechanical constants of PZT thin film showed the value of susceptance(B) of 4800${\mu}$ s at capacitance of 790pF. The PZT films were applied to the vibration angular rate sensor structure and the vibration of 1.78 ${\mu}$m in amplitude at the resonant frequency of 35.8㎑ was obtained by driving voltage of 5V$\sub$p-p/ of bulk piezoelectric materials with out of phase signal through voltage and inverting amplifier.

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High density plasma etching of CoFeB and IrMn magnetic films with Ti hard mask

  • Xiao, Y.B.;Kim, E.H.;Kong, S.M.;Chung, C.W.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.233-233
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    • 2010
  • Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

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기판 Etching 기법을 이용한 DLC 필름의 탄성특성 평가 (Evaluation of Elastic Properties of DLC Films Using Substrate Etching Techniques)

  • 조성진;이광렬;은광용;한준희;고대홍
    • 한국세라믹학회지
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    • 제35권8호
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    • pp.813-818
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    • 1998
  • A simple method to measure the elastic modulus E and Poisson's ratio v of diamod-like carbon (DLC) films deposited on Si wafer was suggested. Using the anisotropic etching technique of Si we could make the edge of DLC overhang free from constraint of Si substrate. DLC film is chemically so inert that we could not on-serve any surface damage after the etching process. The edge of DLC overhang free from constraint of Si substrate exhibited periodic sinusoidal shape. By measuring the amplitude and the wavelength of the sinu-soidal edge we could determine the stain of the film required to adhere to the substrate. Since the residual stress of film can be determine independently by measurement of the curvature of film-substrate com-posite we could calculated the biaxial elastic modulus E/(1-v) using stress-strain relation of thin films. By comparing the biaxial elastic modulus with the plane-strain modulus E/(1-{{{{ { v}^{2 } }}) measured by nano-in-dentation we could further determine the elastic modulus and Poisson's ratio independently. This method was employed to measure the mechanical properties of DLC films deposited by {{{{ { {C }_{6 }H }_{6 } }} rf glow discharge. The was elastic modulus E increased from 94 to 169 GPa as the {{{{ { V}_{ b} / SQRT { P} }} increased from 127 to 221 V/{{{{ {mTorr }^{1/2 } }} Poisson's ratio was estimated to be abou 0.16∼0.22 in this {{{{ { V}_{ b} / SQRT { P} }} range. For the {{{{ { V}_{ b} / SQRT { P} }} less than 127V/{{{{ {mTorr }^{1/2 } }} where the plastic deformation can occur by the substrate etching process however the present method could not be applied.

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LCD 공정용 C3F6 가스를 이용한 Si3N4 박막 식각공정 및 배출가스에 관한 연구 (A Study on Etching of Si3N4 Thin Film and the Exhausted Gas Using C3F6 Gas for LCD Process)

  • 전성찬;공대영;표대승;최호윤;조찬섭;김봉환;이종현
    • 한국진공학회지
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    • 제21권4호
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    • pp.199-204
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    • 2012
  • $SF_6$ 가스는 반도체 및 디스플레이 제조공정 중 건식식각 공정에서 널리 사용되는 가스이다. 하지만 $SF_6$ 가스는 대표적인 온실가스로서 지구 온난화에 큰 영향을 끼치기 때문에 반도체 및 디스플레이 공정에서 $SF_6$ 가스를 대체할 수 있는 가스의 연구가 필요한 상황이다. 그 후보군으로 떠오르고 있는 가스 중의 하나가 바로 $C_3F_6$ 가스이다. 이 가스를 이용하여 $Si_3N_4$ 박막을 건식식각 방법인 Reactive Ion Etching 공정을 수행하여 식각 특성에 관하여 연구하였으며, 흡착제 Zeolite 5A를 이용하여 식각공정 중 배출되는 가스 성분을 감소시켰다. Plasma Enhanced Chemical Vapor Deposition 장비를 이용하여 500 nm 두께의$Si_3N_4$ 박막을 증착하였으며, 노광 공정을 통해 패터닝을 한 후 Reactive Ion Etching 공정을 수행하였다. 그리고 Scanning Electron Microscope 장비를 이용하여 $Si_3N_4$ 박막의 식각된 단면과 식각율을 확인하였다. 또한 공정 후 흡착제 Zeolite 5A를 통과하기 전과 후에 배출되는 가스를 포집하여 Gas Chromatograph-Mass Spectrophotometry 장비를 이용하여 가스 성분을 측정 및 비교하였다.

순차적 순환배열을 이용한 고온초전도 배열 안테나 설계 및 특성해석 (Design and Characterization of HTS antenna array with sequential rotation array)

  • 정동철;황종선;김영민;최효상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.77-81
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    • 2006
  • We report the performance of a four-element, 11.67 GHz, high-Tc superconducting (HTS) microstrip antenna array with corporate feed network and circular polarization for direct broadcasting satellite (DBS) system. Our array antennas were designed and built on a 0.5 mm thick MgO substrate. To compare the superconducting antennas with normal conducting counterpart, One antenna pattern was fabricated from gold thin film, and a second pattern was fabricated from $YBa_2Cu_3O_{7-x}$ (YBCO) superconducting thin film. To improve the axial ratio of circularly polarized arrays, sequential rotation technique were used. Efficiency, radiation pattern, return loss and bandwidth were measured for both antennas at room temperature and at cryogenic temperature. The array produced good circular polarization, and the gain of the array at 77 K, relative to a copper array at room temperature was approximately 1.54 dB. The measured return loss of our HTS antenna array was 35.79 dB at the resonant frequency of 11.67 GHz and The total effective bandwidth was about 3.4 %. The results showed that high-temperature superconductors, when used in microstrip arrays, improved the efficiency of the HTS antenna array for circularly polarization.

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The Electric Conductivity $SrBi_2Ta_2O_9$ Capacitors using Rf Magnetron Sputtering Technique

  • Cho, C.N.;Shin, C.G.;Song, M.J.;Choi, W.S.;Park, G.H.;So, B.M.;Kim, C.H.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 논문집
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    • pp.3-5
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    • 2008
  • The $SrBi_2Ta_2O_9$ thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing temperatures were studied. Through the x-ray diffraction analysis and the scanning electron microscopy (SEM), it could be observed that crystallization of the SBT thin film started around $650^{\circ}C$ and complete crystallization was accomplished around $750^{\circ}C$ and grains grew from a small spheric form to rod-like. For the leakage current density of the SBT capacitor depending upon various annealing atmospheres, capacitor annealed in the oxygen atmosphere showed the most excellent characteristic, and they were respectively about $2.13\times10^{-9}[A/cm^2]$ at 5V and 340.

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수정체 광투과에 대응하는 LPE Filter 설계 (Layout of Long-pass-edge Filter Correspond with the Optical Transmission in Crystalline)

  • 김용근
    • 한국안광학회지
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    • 제4권2호
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    • pp.57-63
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    • 1999
  • 소의 수정체의 광투과, 흡수 Spectrum을 Spectrophotometer로 200-800nm 영역에서 측정하였다. 자외선 A-B선 모두 흡수되고 400nm 영역에서 광투과 edge가 나타나고, edge 영역보다 큰 파장에서는 완전투과형 filter가 되었다. 특히 $4^{\circ}C$-$60^{\circ}C$온도에서 광흡수 투과율의 온도조성은 없었다. 박막 설계로부터 long-pass edge filter형인 $n_0/(0.5H)L(LH)^6(0.5H)/n_s$$n_0{\mid}(0.5LH0.5L)^kL/1.25{\mid}4.0$ 박막 구조가 소의 수정체 광투과 Spectrum과 일치함을 알 수 있었다. 인공수정체, 안내렌즈의 설계시 박막구조 설계를 추가함으로써 자외선 차단 역할을 할 수 있다.

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THE EFFECT OF THE HIGH DENSITY PLASMA ON THE DIAMOND-LIKE CARBON FILMS

  • Kim, H.;D.H. Jung;Park, B.;K. C. Yoo;Lee, J. J.;J. H. Joo
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2003년도 추계학술발표회초록집
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    • pp.54-54
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    • 2003
  • DLC films were deposited on Si(100) substrates by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD). A mixture of acetylene (C$_2$H$_2$) and argon (Ar) gases was used as the precursor and plasma source, respectively. The structure of the films was characterized by the Raman spectroscopy. Results from the Raman spectroscopy analysis indicated that the property change of the DLC films is due to the sp$^3$ and sp$^2$ ratio in the films under various conditions such as ICP power, working pressure and RF substrate bias. The hydrogen content in the DLC films was determined by an electron recoil detector (ERB). The roughness of the films was measured by atomic force microscope (Am). A microhardness tester was used for the hardness and elastic modulus measurement. The DLC film showed a maximum hardness of 37㎬. In this work, the relationship between deposition parameters and mechanical properties were discussed.

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La1-xSrxMO3(M = Fe, Co, Mn) 물질을 이용한 포름알데히드 가스센서의 제조와 특성 (Fabrication and characteristics of La1-xSrxMO3(M = Fe, Co, Mn) formaldehyde gas sensors)

  • 김한지;최정범;김신도;유광수
    • 센서학회지
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    • 제17권3호
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    • pp.203-209
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    • 2008
  • Thick film formaldehyde (HCHO) gas sensors were fabricated by using $La_1_{-x}Sr_xMO_3$ (M= Fe, Co, Mn) ceramics. The powders of $La_1_{-x}Sr_xMO_3$ (M=Fe, Co, Mn) were synthesized by conventional solid-state reaction method. By using the $La_1_{-x}Sr_xMO_3$ (M=Fe, Co, Mn) paste, the thick-film formaldehyde sensors were prepared on the alumina substrate by silkscreen printing method. The experimental results revealed that $La_1_{-x}Sr_xMO_3$ (M= Fe, Co, Mn) ceramic powder has a perovskite structure and the thick-film sensor shows excellent gas-sensing characteristics to formaldehyde gas (sensitivity of $La_{0.8}Sr_{0.2}FeO_3$, S= 14.7 at operating temperature of $150^{\circ}C$ in 50 ppm HCHO ambient).