• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.661-663
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• 2003

In this paper, production of TFT-LCD adopting Cu electrode, in spite of low resistivity, which was not commercially applied to TFT LCD products because of processibility, reliability problems etc. was mentioned. Based on the test result of etch and strip process of Cu electrode, the TFT device using Cu material shows the same characteristics as the conventional TFT devices. We describe the realization of a 20.1" UXGA model which was firstly applied to Cu electrode.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.470-473
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• 2009

We have developed a novel driving method, Six times Rate Driving(SRD) for the purpose of making cost competitive TFT-LCD. By applying SRD method to an a-Si TFT-LCD, the driving rate was increased six times as it was named but the number of data lines and so its D-Ics were reduced to one sixth of the conventional one which resulted in the cost saving of that much. We also newly designed the gate driver in order to avoid any expansion of the bezel width caused by applying SRD. Our newly developed driving technology, SRD was successfully applied to 7.0-inch WSVGA (1024 ${\times}$ 600) TFT-LCD which can be driven with only one data D-IC and here introduced.

• Journal of Information Display
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• v.6 no.3
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• pp.18-21
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• 2005

A new technology for reducing photolithography process from a four step to a three step process in the fabrication of TFT LCD is introduced. The core technology for 3-mask-TFT processes is the lift-off process [1], by which the PAS and PXL layers can be formed simultaneously. A different method of the lift-off process was developed in order to enhance the performance of efficiency with conventional positive and not negative PR which is the generally used in other lift-off process. In addition, the removal capacity of the ITO/PR in lift-off process was evaluated. The evaluation results showed that the new process can be run in conventional TFT production condition. In order to apply this new process in existing TFT process, several tests were conducted to ensure stability of the TFT process. It was found that the outgases from PR on the substrate in ITO sputtering chamber do not raise any problem, and the deposited ITO film beside the PR has conventional ITO qualities. Furthemore, the particles that were produced due to the ITO chips in PR strip bath could be reduced by the existing filtering system of stripper. With the development of total process and design of the structure for TFT using this technology, 3-mask-panels were achieved in TN and IPS modes, which showed the same display performances as those with the conventional 4mask process. The applicability and usefulness of the 3-mask process has already verified in the mass production line and in fact it currently being used for the production of some products.

• Journal of Korea Multimedia Society
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• v.15 no.4
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• pp.439-448
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• 2012

TFT-LCD panel images have non-uniform brightness, noise signal and defect signal. It is hard to divide defect signal because of non-uniform brightness and noise signal, so various divide methods have being developed. In this paper, we suggest method to divide defective regions on TFT-LCD panel image by estimating a menas of two different size of windows, which is suggested by Eikvil et al., and using difference of them. But in this method, the size of detectable defects is restricted by the size of window, hence it has inefficient problem that the size of window have to increase to divide a large defect region. To solve this problem we suggest an algorithm which can divide various size of defects, by using Multi-scale and restrict a detectable size of defects in each scale. To prove an efficiency of suggested algorithm, we show that resulting images of real TFT-LCD panel images and an artificial image with various defects.

• Journal of Korea Multimedia Society
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• v.19 no.8
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• pp.1288-1296
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• 2016

The reliable detection of the limited defect in TFT-LCD images is difficult due to the small intensity difference with the background. However, the proposed detection method reliably detects the limited defect by enhancing the TFT-LCD image based on the cumulative histogram and then detecting the defect through the mean and standard deviation of the enhanced image. Notably, an image enhancement using a cumulative histogram increases the intensity contrast between the background and the limited defect, which then allows defects to be detected by using the mean and standard deviation of the enhanced image. Furthermore, through the comparison with the histogram equalization, we confirm that the proposed algorithm suppresses the emphasis of the noise. Experimental comparative results using real TFT-LCD images and pseudo images show that the proposed method detects the limited defect more reliably than conventional methods.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1327-1329
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• 2007

We developed a 4 inch (qVGA, 320x240) a-Si TFT LCD which has the function of color scanner. We have designed the novel pixel structure and got good scanning quality with minimum aperture loss. In this new pixel, the sensor capacitance was increased in double without decreasing the aperture loss.

• Journal of Information Display
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• v.7 no.3
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• pp.5-8
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• 2006

A novel a-Si TFT integrated gate driver circuit using multi-thread driving has been developed. The circuit consists of two independent shift registers alternating between the two modes, "wake" and "sleep". The degradation of the circuit is retarded because the bias stress is removed during the sleep mode. It has been successfully integrated in 14.1-in. XGA LCD Panel, showing enhanced stability.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1767-1770
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• 2007

The key development issues in the flexible displays are TFT backplane technology for their various applications, which requires competitive device performance as well as its low temperature process. In this paper, with shortly reviewing recent flexible display development status, we describe technical trends of low-temperature a-Si TFTs. Our TFTs show good device characteristics enough to apply LCD and electrophoretic display.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.205-207
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• 2008

The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.408-411
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• 2004

Color filter is a fundamental and necessary component to make a full-color TFT-LCD, its quality intensively influence the performance of TFT-LCD in the application of Notebook Computer, Monitor and Television. Color filter in chromaticity also make an effect for human visual system and video enjoyment. Recently, mother glass size is enlarged for demand of large-size panels and new generation color .filter technology for large-size liquid crystal cell panels is also developed. Here, latest generation color filter technology in TFT-LCD will be discussed.