• Title/Summary/Keyword: ZrO_2$

Search Result 2,330, Processing Time 0.029 seconds

Structural and Dielectric Properties of PZT(20/80)/PZT(80/20) Heterolayered Thin Films Prepared by Sol-Gel Method. (Sol-Gel법으로 제작한 PZT(20/80)/PZT(80/20) 이종층 박막의 구조 및 유전특성)

  • Shim, Kwang-Taek;Chung, Jang-Ho;Lee, Young-Hie;Park, In-Gil;Lee, Sung-Gap
    • Proceedings of the KIEE Conference
    • /
    • 1996.11a
    • /
    • pp.245-247
    • /
    • 1996
  • The ferroelectric $Pb(Zr_xTi_{1-x})O_3$ (20/80, 80/20) heterolayered thin films were fabricated from an alkoxide-based by Sol-Gel method. The PZT(20/80) and PZT(80/20) stock solution were made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate by turns. Each layers were baked to remove the organic materials at 300[$^{\circ}C$] for 30[min]. and sintered at 650[$^{\circ}C$] for 1[hr]. This procedure was repeated 5 times. At this time the thickness of thin films were about 4000[$\AA$]. Relative dielectric constant and remanent polarization of the PZT heterolayered thin films were 1200, 27.10 [${\mu}C/cm^2$], respectively.

  • PDF

The effect of rapid thermal annealing treatment for ferroelectric properties of PZT thin films (RTA를 이용한 후열처리가 PZT 박막의 강유전 특성에 미치는 영향)

  • Ju, Pil-Yeon;Park, Young;Jeong, Kyu-Won;Lim, Dong-Gun;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1999.11a
    • /
    • pp.136-139
    • /
    • 1999
  • The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

  • PDF

Effects of Counterpart Materials on Wear Behavior of Thermally Sprayed STS316 Coatings (STS316 용사코팅층의 마모거동에 미치는 상대마모재의 영향)

  • Lee, Jae-Hong;Kim, Yeong-Sik
    • Journal of Power System Engineering
    • /
    • v.18 no.6
    • /
    • pp.58-63
    • /
    • 2014
  • This paper deals with the effects of counterpart materials on the wear behavior of thermally sprayed STS316 coatings. STS316 powders were flame-sprayed onto a carbon steel substrate. Dry sliding wear tests were performed using the applied loads of 15 N. AISI52100, $Al_2O_3$, $ZrO_2$ and $Si_3N_4$ balls were used as counterpart materials. Wear behavior of STS316 coatings against different counterpart materials were studied using a scanning electron microscope(SEM) and energy dispersive X-ray spectroscopy (EDS). The results show that the wear behavior of thermally sprayed STS316 coatings strongly depends on the type of counterpart material. Dominant wear mechanism was similar for all studied materials as failure of adhesion film except for Si3N4 used as counterpart material. In the case of Si3N4 used as counterpart material, dominant wear mechanism was abrasion.

Deposition of Ferroelectric PB(Zr0.52Ti0.48)O3 Films on Platinized Silicon Using Nd:YAG Laser

  • Im, Hoong-Sun;Kim, Sang-Hyeob;Choi, Young-Ku;Lee, Kee-Hag;Jung, Kwang-Woo
    • Bulletin of the Korean Chemical Society
    • /
    • v.18 no.1
    • /
    • pp.56-61
    • /
    • 1997
  • Lead zirconate titanate (PZT) thin fills were deposited onto the Pt/Ti/SiO2/Si substrate by the pulsed laser deposition with the second harmonic wavelength (532 nm) of Nd:YAG laser. In order to determine the optimum conditions for the film deposition, the phase of the films were investigated as functions of ambient oxygen pressure, substrate temperature, and laser fluence. Also the chemical composition analysis was conducted for the PZT films deposited under various ambient oxygen pressure. When the distance between substrate and bulk PZT target is set to 20 mm, the optimum conditions have been determined to be 3 torr of oxygen pressure, 1.5 J/cm2 of laser fluence, and 823-848(±10) K range of substrate temperature. At these conditions, perovskite phase PZT films were obtained on platinized silicon. The chemical composition of the films is very similar to that of PZT bulk target. The physical structure of the deposited films analyzed by scanning electron microscopy shows a columnar morphology perpendicular to the substrate surface. Capacitance-Voltage hysteresis loop measurements show also a typical characteristics of ferroelectric thin film. The dielectric constant is found to be 528 for the 0.48 μm thickness of PZT thin film.

A Simulation Study on the Synthesis of Syngas from the Reforming Reaction of Biogas (바이오가스 개질 반응으로부터 합성가스 제조를 위한 반응 모사 연구)

  • HAN, DANBEE;BAEK, YOUNGSOON
    • Journal of Hydrogen and New Energy
    • /
    • v.29 no.1
    • /
    • pp.1-10
    • /
    • 2018
  • The amount of biogas increases as the amount of organic waste increases. Recently, biogas from organic waste have been made much efforts to utilize as a energy. In particular, the concentration of $CH_4$ and $CO_2$ generated from sewage sludge and livestock manure treatment are 60-70% and 30-35%, and $CH_4$ and $CO_2$ generated from food wastes are 60-80% and 20-40%. In case of landfill gas, $CH_4$ and $CO_2$ have a concentration of 40-60% and 40-60% respectively. Therefore, in order to use the biogas more widely, it is necessary to convert the biogas to methanol, LNG or DME. In this study, experiments were conducted to produce hydrogen and carbon monoxide through various biogas reforming reactions on $Ni/Ce-ZrO_2/Al2O3$ catalysts. The experiment of synthetic gas synthesis was carried out on a wide concentrations of methane and carbon dioxide, which were the major constituents of biogas from various organic wastes. The effect of $(O_2+CO_2)/CH_4$ (=R') on the yields of hydrogen and carbon monoxide, the conversion rate of methane and carbon dioxide was investigated. Also simulation for syngas synthesis on the $CO_2$ reforming of $CH_4$ was computed by employing total Gibbs free energy minimization method using PRO/II simulator, and compared with the experimental results on wet and dry reforming reaction of biogas.

Microstructure and Piezoelectric Properties of Low Temperature Sintering PMW-PNN-PZT-BF Ceramics According to PNN Substitution (PNN 치환에 따른 PMW-PNN-PZT-BF 세라믹스의 미세구조와 압전 특성)

  • Sin, Sang-Hoon;Yoo, Ju-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.29 no.2
    • /
    • pp.90-94
    • /
    • 2016
  • In this work, [$Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_x(Zr_{0.5}Ti_{0.5})_{0.97-x}O_3-BiFeO_3$] (x=0.02 to 0.12) composition ceramics were fabricated by the conventional soild state reaction method and their microstructure and piezoelectric properties were investigated according to PNN substitution. The addition of small amount of $BiFeO_3$, $Li_2CO_3$, and $CaCO_3$ were used in order to decrease the sintering temperature of the ceramics. The XRD (x-ray diffraction patterns) of all ceramics exhibited a perovskite structure. The sinterability of PMW-PNN-PZT-BF ceramics was remarkably improved using liquid phase sintering of $CaCO_3$, $Li_2CO_3$. However, it was identified from of the X-ray diffraction patterns that the secondary phase formed in grain boundaries decreased the piezoelectric properties. According to the substitution of PNN, the crystal structure of ceramics is transformed gradually from a tetragonal to rhombohedral phase. The x=0.10 mol PNN-substituted PMW-PNN-PZT-BF ceramics sintered at $920^{\circ}C$ showed the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33{\cdot}}g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=566$ [pC/N], $g_{33}=29.28[10^{-3}mV/N]$, $d_{33{\cdot}}g_{33}=16.57[pm^2/N]$, $k_p=0.61$, density=7.82 [$g/cm^3$], suitable for duplex ultrasonic sensor application.

A Study on Pill Temperature Control method and Hydrogen Production with 2-step Thermochemical Cycle Using Dish Type Solar Thermal System (접시형 태양열 시스템을 이용한 2단계 열화학 싸이클의 수소 생산과 PID 온도 제어 기법 연구)

  • Kim, Chul-Sook;Kim, Dong-Yeon;Cho, Ji-Hyun;Seo, Tae-Beom
    • Journal of the Korean Solar Energy Society
    • /
    • v.33 no.3
    • /
    • pp.42-50
    • /
    • 2013
  • Solar thermal reactor was studied for hydrogen production with a two step thermochemical cycle including T-R(Thermal Reduction) step and W-D(Water Decomposition) step. NiFe2O4 and Fe3O4 supported by monoclinic ZrO2 were used as a catalyst device and Ni powder was used for decreasing the T-R step reaction temperature. Maintaining a temperature level of about $1100^{\circ}C$ and $1400^{\circ}C$, for 2-step thermochemical reaction, is important for obtaining maximum performance of hydrogen production. The controller was designed for adjusting high temperature solar thermal energy heating the foam-device coated with nickel- ferrite powder. A Pill temperature control system was designed based on 2-step thermochemical reaction experiment data(measured concentrated solar radiation and the temperature of foam device during experiment). The cycle repeated 5 times, ferrite conversion rate are 4.49~29.97% and hydrogen production rate is 0.19~1.54mmol/g-ferrite. A temperature controller was designed for increasing the number of reaction cycles related with the amount of produced hydrogen.

The Characteristics of PZ-PT-PWN Piezoelectric Ceramics for Application to High Power Device (고출력 압전 디바이스 응용을 위한 PZ-PT-PMN계 압전 세라믹의 특성)

  • Jeong, Su-Hyeon;Hong, Jong-Guk;Lee, Jong-Seop;Chae, Hong-In;Yun, Man-Sun;Im, Gi-Jo
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.49 no.3
    • /
    • pp.155-160
    • /
    • 2000
  • The piezoelectric properties and the doping effect for$0.95Pb(Zr_xTi_{1-x})O_3+0.05Pb(Mn1/3Nb2/3)O_3$ compositions were studied. Also, the heat generation and the change of electromechanical characteristics, the important problem in practical usage, were investigated under high electric field driving. As a experiment results under low electric field, the values of kp and $\varepsilon33T$ were maximized, but Qm was minimized(Kp=0.57, Qm=1550) in the composition of x=0.51. In order to increase the values of Qm $Nb_2O_5$ was used as a dopant. As the result of that, the grain size was suppressed and the uniformity of grain was improved. Also, the values of kp decreased, and the values of Qm increased with doping concentration of $Nb_2O_5$. As a experiment results under high electric field driving, when vibration velocity was lower than 0.6[m/s], the temperature increase was $20[^{\circ}C]$, and the change ratio of mechanical quality factor was less than 10[%]. So, its electromechanical characteristics was very stable. Conclusively, piezoelectric ceramic composition investigated at this paper is suitable for application to high power piezoelectric devices.

  • PDF

Properties of Piezoelectric thick film with detailed structure following particle size (입자 크기에 따른 미세구조를 가지는 압전 후막 특성)

  • Moon, Hi-Gyu;Song, Hyun-Cheol;Kim, Sang-Jong;Choi, Ji-Won;Kang, Jong-Yoon;Kim, Hyun-Jai;Jo, Bong-Hee;Yoon, Seok-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.06a
    • /
    • pp.325-325
    • /
    • 2008
  • 스크린 프린팅에 의한 압전 후막은 MEMS 공정을 이용하여 마이크로 펌프, 마이크로 벨브, 마이크로 센서, 마이크로 로봇 등 여러 초소형 기계부품에 응용되고 있으며, Sol-Gel, PLD를 이용해 증착된 막 등에 비해 수십${\mu}m$의 비교적 두꺼운 막을 형성시킬 수 있는 장점을 가지고 있다. 그러나 실리콘 기판을 사용하여 스크린 프린팅으로 형성된 압전 후막의 경우, 공정상 바인더를 연소시키는 과정을 거치게 되므로, 밀집된(Dense) 구조를 가지는 막을 만들기가 어렵다. 이로 인해 스크린 프린팅에 의한 후막은 전기적 특성 및 기계적 특성이 떨어지는 경향이 있다. 본 연구에서는 스크린 프린팅에 의한 압전 후막의 밀집된 구조 및 특성을 향상시키기 위해 0.01Pb$(Mg_{1/2}W_{1/2})$O3-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3-0.35PbTiO_3-0.23PbZrO_3$의 powder와 Attrition 밀링 처리된 powder를 비율별로 혼합하여 입자의 크기를 변화시켜 막의 충진 밀도를 향상시켰으며, 열처리 효과를 극대화시키기 위해 RTA(Rapidly Thermal Annealing)를 통해 열처리 하였다. Attrition 밀링에 의한 파우더를 각각 비율별로 100%, 50%, 25%로 혼합하여 만든 압전 세라믹 페이스트는 P-type(100)Si Wafer sample 위에 $1{\mu}m$의 하부전극용($1100^{\circ}C$) Ag 전극을 screen print하여 소결했다. 그리고 다시 전극이 형성된 Si wafer 위에 스크린 프린팅하고, 건조 한 후 RTA로 300초 동안 열처리 한 결과 밀집된 구조를 가지는 압전 후막을 제작 수 있었다.

  • PDF

소결한 $(Bi_xLa_{1-x})Ti_3O_{12}$ 강유전체에서 조성 및 첨가물질에 따른 미세구조 및 전기적 특성 평가

  • Kim, Yeong-Min;Gang, Il;Ryu, Seong-Rim;Gwon, Sun-Yong;Jang, Geon-Ik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.11a
    • /
    • pp.279-279
    • /
    • 2007
  • 비휘발성 메모리 Fe-RAM은 빠른 정보처리 속도와 전원공급이 차단되었을 때도 계속 정보를 유지할 수 있는 비휘발성 특징과 더불어 저전압, 저전력 구동의 장점이 있어서, 차세대 메모리로 많은 주목을 받고 있다. FeRAM에 사용되는 강유전체는 주로 Pb(Zr,Ti)$O_3$가 적용되었는데, 최근에는 비납계 강유전체의 연구도 활발히 이루어지고 있다. 이러한 비납계 강유전체 중에서 가장 특성이 우수한 물질은 $(Bi,La)_4Ti_3O_{12}$ (BLT) 이다. 그런데 BLT는 결정 방향에 따른 강한 이방성의 강유전 특성을 나타내기 때문에 BLT 박막을 이용하여 Fe-RAM 소자 등을 제작하기 위해서는 결정의 방향성을 세심하게 제어하는 것이 매우 중요하다. 지금까지 연구된 BLT 박막의 방향성 조절결과를 보면, BLT 박막을 스핀 코팅 법 (spin coating method)으로 증착하고, 핵생성 열처리 단계를 조절하여 무작위 방향성을 갖는 박막을 제조하는 방법이 일반적이었다. 그런데 이러한 스핀 코팅법에서의 핵생성 단계의 제어는 공정 조건 확보가 너무 어려운 단점이 있다. 이러한 어려움을 극복할 수 있는 대안은 스퍼터링 증착법(sputtering deposition method), PLD (pulsed laser deposition)법 등과 같은 PVD (physical vapor deposition) 법의 증착방법을 적용하는 것이다. PVD 법으로 증착하는 경우에는 이미 박막 내에 무수한 결정핵이 존재하기 때문에 핵생성 단계가 필요가 없게 된다. PVD 증착법의 적용을 위해서는 타겟의 제조 및 평가 실험이 선행되어야 한다. 그런데 벌크 BLT 재료의 소결공정 조건과 전기적 특성에 관한 연구 결과는 거의 발표가 되지 않고 있다. 본 실험에서는 $Bi_2O_3,\;TiO_2,\;La_2O_3,\;Nb_2O_5\;and\;Al_2O_3$ 분말들을 이용하여 최적의 조성을 구하기 위하여 $Nb^{+5}$$Al^{+3}$$Ti^{+4}$ 자리에 소량 치환시켜 제조하였다. 혼합된 분말을 하소 후 pellet 형태로 성형하여 소결을 실시하였다. 시편을 1mm 두께로 연마하고, 양면에 silver 전극을 인쇄하여 전기적 특성을 측정하였다. 측정결과 $Ti^{+4}$ 자리에 $Nb^{+5}$를 치환하여 제조한 시편에서 $2P_r{\sim}31\;{\mu}c/cm^2$정도의 매우 우수한 특성을 얻었다.

  • PDF