• Title/Summary/Keyword: ZrO_2$

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Property Conversion of Water and Removing Characteristics of Escherichia Coli Inner Discharge Tube With ZrO$_2$Beads (구형 ZrO$_2$를 충진한 방전관의 수질 변환 및 대장균제거 특성)

  • 이동훈;박재윤
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.3
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    • pp.143-148
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    • 2004
  • This paper shows property conversion of water and removing characteristics of Escherichia coli for discharge tube with $ZrO_2$ beads. At the result of the removal characteristic experiments of Escherichia coli using the discharge tube with $ZrO_2$ beads, because the electric field is also increased when input voltage is increased, the removal characteristic of Escherichia coli was appeared relation connection to input voltage. And if a passing number of test water in discharge tube with $ZrO_2$beads is increased, the removal ratio of Escherichia coli is to be increased because passing number of electric field section is increased. And if diameter of $ZrO_2$beads is increased, the removal time of Escherichia coli is to be decreased because dielectric polalization of $ZrO_2$beads. Also, the removal ratio of Escherichia coli of the discharge tube with $ZrO_2$beads. is appeared higher than the removal ratio of the discharge tube without $ZrO_2$beads. And a satulation punt of ozone and $H_2$ $O_2$generation density inner water was appeared near 60[min].

Removal characteristic of Escherichiacoli and water property conversion for Discharge tube with globular $ZrO_2$ (구형 지르코니아를 갖는 수방전관의 수질성분변환 및 세균제거특성)

  • Lee, Dong-Hoon;Park, Hong-Jae;Park, Jae-Youn
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.550-553
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    • 2003
  • This paper was shown water properly conversion and removal characteristic of escherichia coli for discharge tube with $ZrO_2$ beads. At the result of the removal characteristic experiments of escherichia coli using the discharge tube with $ZrO_2$ beads, because the electric field is also increased when input voltage is increased, the removal characteristic of escherichia coli was appeared relation connection to input voltage. And if a passing number of test water in discharge tube with $ZrO_2$ beads is increased, the removal ratio of escherichia coli is to be increased because passing number of electric field section is increased. And if diameter of $ZrO_2$ beads is increased, the removal time of escherichia coli is to be decreased because dielectric polalization of $ZrO_2$ beads. Also, the removal ratio of escherichia coli of the discharge tube with $ZrO_2$ beads. is appeared higher than the removal ratio of the discharge tube without $ZrO_2$ beads. And a salutation point of ozone and $H_2O_2$ generation density inner water was appeared near 60[min].

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Preparation and Characterization of Porous Glass in $Na_2O-B_2O_3-SiO_2$ System ; Addition Effects of $ZrO_2$ and MgO (분상법을 이용한 봉규산염계 다공질 유리의 제조 및 특성;$ZrO_2$와 MgO 첨가 영향)

  • 김영선;최세영
    • Journal of the Korean Ceramic Society
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    • v.32 no.3
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    • pp.385-393
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    • 1995
  • Akali-resistant porous glass was prepared by phase separation in Na2O-B2O3-SiO2 system containing ZrO2 and MgO. ZrO2 was added for alkali-resistance and MgO for anti-cracking during leaching. Optimal content of ZrO2 for alkali-resistance was 7wt% and devitrification by heat treatment resulted from further addition. Pore size and pore volume were decreased and specific surface area was increased with ZrO2 addition due to depression in phase separation. Addition of 3mol% MgO to mother glass containing 7wt% ZrO2 was effective for anti-crack during leaching. In this case, with phase separation at 55$0^{\circ}C$ and 5$25^{\circ}C$ for 20 hrs. crack-free porous glasses could be prepared. The relation between pore size r and heat treatment time t at 55$0^{\circ}C$ was D=25.58+18.16t. According to measurement of gas permeability, the mechanism of gas permeation was Knudsen flow. N2 and He permeability of porous glass which was prepared by heat treatment at 55$0^{\circ}C$ for 20 hrs. were 0.843$\times$10-7mol/$m^2$.s.Pa and 2.161$\times$10-7mol/$m^2$.s.Pa respectively.

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Effect of Tetragonal $ZrO_2$ Addition on the Mechanical Properties of $\alpha$-Alumina/La-\beta-Aluminate $Composite (정방정 $ZrO_2$의 첨가가 $\alpha$-Alumina/La-\beta-Aluminate $ 복합체의 기계적 성질에 미치는 영향)

  • Suk-Won Kang;Hai-Doo Kim;Shin Kim;Soo-Young Lee;Dong-Soo Park
    • Journal of the Korean Ceramic Society
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    • v.31 no.5
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    • pp.513-519
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    • 1994
  • Alumina composite was fabricated by introducing tetragonal ZrO2 in alumina composite of $\alpha$-alumina reinforced with in-situ formed La-$\beta$-aluminate (LaAl11O18). The powder mixture of composition (100-x)[88 Al2O3+(La2O3+11 Al2O3)]+x vol% ZrO2 was prepared with x from 0 to 40. Dense composites fabricated by hot-pressing exhibited bending strength up to 1200 MPa. The gain growth inhibiting effect of ZrO2 grains and La-$\beta$-aluminate platelets, and possibly the stress-induced phase transformation of ZrO2 have resulted in the high bending strength. The fracture toughness of the composite also increased up to 8.5 MPa.m1/2. The enhancement in toughness can be explained by transformation and microcrack toughening of ZrO2 and by crack deflection and bridging of La-$\beta$-aluminate platelets and ZrO2.

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Study on the characteristics of ALD, ZrO2 thin film for next-generation high-density MOS devices (차세대 고집적 MOS 소자를 위한 ALD ZrO2 박막의 특성 연구)

  • Ahn, Seong-Joon;Ahn, Seung-Joon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.1
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    • pp.47-52
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    • 2008
  • As the packing density of IC devices gets ever higher, the thickness of the gate $SiO_2$ layer of the MOS devices is now required to be reduced down to 1 nm. For such a thin $SiO_2$ layer, the MOS device cannot operate properly because of tunneling current and threshold voltage shift. Hence there has been much effort to develop new dielectric materials which have higher dielectric constants than $SiO_2$ and is free from such undesirable effects. In this work, the physical and electrical characteristics of ALD $ZrO_2$ film have been studied. After deposition of a thin ALD $ZrO_2$ film, it went through thermal treatment in the presence of argon gas at $800^{\circ}C$ for 1 hr. The characteristics of morphology, crystallization kinetics, and interfacial layer of $Pt/ZrO_2/Si$ samples have been investigated by using the analyzing instruments like XRD, TEM and C-V plots. It has been found that the characteristics of the $Pt/ZrO_2/Si$ device was enhanced by the thermal treatment.

CeO2-Promoted Highly Active Catalyst, NiSO4/CeO2-ZrO2 for Ethylene Dimerization

  • Pae, Young-Il;Shin, Dong-Cheol;Sohn, Jong-Rack
    • Bulletin of the Korean Chemical Society
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    • v.27 no.12
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    • pp.1989-1996
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    • 2006
  • The $NiSO_4/CeO_2-ZrO_2 $catalysts containing different nickel sulfate and $CeO_2$ contents were prepared by the impregnation method, where support, $CeO_2-ZrO_2$was prepared by the coprecipitation method using a mixed aqueous solution of zirconium oxychloride and cerium nitrate solution followed by adding an aqueous ammonia solution. No diffraction line of nickel sulfate was observed up to 20 wt %, indicating good dispersion of nickel sulfate on the surface of $CeO_2-ZrO_2$. The addition of nickel sulfate (or $CeO_2$) to $ZrO_2$ shifted the phase transition of $ZrO_2$ from amorphous to tetragonal to higher temperatures because of the interaction between nickel sulfate (or $CeO_2$) and $ZrO_2$. A catalyst (10-$NiSO_4/1-CeO_2-ZrO_2$) containing 10 wt % $NiSO_4$ and 1 mole % $CeO_2$, and calcined at $600{^{\circ}C}$ exhibited a maximum catalytic activity for ethylene dimerization. The catalytic activities were correlated with the acidity of catalysts measured by the ammonia chemisorption method. The role of $CeO_2$was to form a thermally stable solid solution with zirconia and consequently to give high surface area, thermal stability and acidity of the sample.

Optimization of Co-precipitated $CeO_2-ZrO_2$ Supports for Water-Gas Shift Reaction to Produce High Purity Hydrogen (고순도 수소 생산을 위한 WGS 반응용 $CeO_2-ZrO_2$ 담체 최적화)

  • Jeong, Dae-Woon;Eum, Ic-Hwan;Yoo, Byung-Chul;Koo, Kee-Young;Yoon, Wang-Lai;Roh, Hyun-Seog
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.757-760
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    • 2009
  • 최근 들어 WGS 반응은 Pt과 같은 귀금속 촉매를 다양한 담체에 담지하여 낮은 온도에서 높은 활성을 지닌 촉매를 제조하기 위한 연구가 활발히 진행되고 있다. WGS 반응에서 귀금속 촉매가 높은 활성을 가지기 위해서 높은 산소저장능력(Oxygen Storage Capacity)과 산화환원능력(Redox)을 지닌 담체 개발이 필요하다. Ce-$ZrO_2$ 담체는 구조적으로 안정하며 높은 산소저장능을 가지고 있는 것으로 알려져 있다. Ce-$ZrO_2$ 구조는 Ce/Zr 비에 따라 다양한 변화가 생긴다. Ce/Zr 비가 6/4, 8/2인 경우 입방구조(Cubic)를 가지며 2/8인 경우 정방입계(Tetragonal)구조를 가진다. 이것은 담체 특성의 변화를 의미한다. 따라서, WGS 반응용 최적 담체를 선정하기 위해 Ce/Zr 비를 제조변수로 하여 담체특성을 분석하였다. 제조된 모든 담체는 공침법(Co-precipitation)을 사용하여 제조하였으며 $500^{\circ}C$에서 6시간 소성하였다. 담체 특성분석은 BET, XRD를 이용하였다. 추가적으로 제조변수를 다양화하여 담체 제조를 마쳤으며 특성분석이 진행 중이다. 분석 결과 $Ce_{0.2}Zr_{0.8}O_2$ 담체가 가장 넓은 표면적을 가지고 있으며 Ce/Zr 비가 높아질수록 표면적이 감소하는 경향을 나타내었다. Ce-$ZrO_2$ 담체의 나노결정크기는 Ce/Zr 비가 작아질수록 결정크기가 감소하는 경향을 나타내었으며 $Ce_{0.2}Zr_{0.8}O_2$가 Ce-$ZrO_2$ 담체 중에서 가장 작은 결정크기를 나타내어 3nm 이하의 나노-담체가 제조되었음을 확인하였다.

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A Characterization Study on Nafion$^{(R)}$/$ZrO_2-TiO_2$ Composite Membranes for PEMFC Operation at High Temperature and Low Humidity (고온/저가습 PEMFC 운전을 위한 Nafion$^{(R)}$/$ZrO_2-TiO_2$ 복합 전해질 막의 특성 연구)

  • Park, Ki-Tae;Chun, Jeong-Hwan;Choi, Dong-Woong;Kim, Sung-Hyun
    • Transactions of the Korean hydrogen and new energy society
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    • v.22 no.1
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    • pp.60-68
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    • 2011
  • [ $ZrO_2-TiO_2$ ]binary oxides with various Zr:Ti molar ratios were prepared by sol-gel method and Nafion$^{(R)}$/$ZrO_2-TiO_2$ composite membranes were fabricated for proton exchange membrane fuel cells (PEMFCs) at high temperature and low humidity. Water uptake, Ion exchange capacity (IEC), and proton conductivity of Nafion$^{(R)}$/$ZrO_2-TiO_2$ composite membranes were characterized and these composite membranes were tested in a single cell at $120^{\circ}C$ with various relative humidity (R.H.) conditions. The obtained results were compared with the unmodified membranes (Nafion$^{(R)}$ 112 and Recast Nafion$^{(R)}$). A Nafion$^{(R)}$/$ZrO_2-TiO_2$ composite membrane with 1:3 of Zr:Ti molar ratio showed the highest performance. The performance showed 500 mW/$cm^2$ (0.499V) at $120^{\circ}C$, 50% R. H., and 2 atm.

Growth and characterization of $Al_{2}O_{3}-based\;Y_{3}Al_5O_{12},\;ZrO_{2}$ binary and ternary eutectic fibers

  • Lee, J.H.;Yoshikawa, A.;Kaiden, H.;Fukuda, T.;Yoon, D.H.;Waku, Y.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.4
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    • pp.170-175
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    • 2001
  • It was possible to grow the $Al_{2}O_{3}$ based $Y_{3}A_{5}O_{12}(YAG),ZrO_{2}$ binary and ternary eutectic fibers using micro-pulling down method with a growing rate of 0.1~15 mm/min. While $Al_{2}O_{3}/ZrO_{2}$ showed cellular-lamellar structure, $Al_{2}O_{3}$/YAG and $Al_{2}O_{3}$/YAG/$ZrO_{2}$ternary eutectic fibers showed homogeneous Chinese script lamellar structures. The microstructures of $Al_{2}O_{3}/ZrO_{2}$ binary eutectic fibers changed with solidification rate from lamellar pattern to cellular structure. The interlamellar spacing agreed with the inverse-square-root dependance on pulling rate according to $\lambda$=$kv_p\;{-1/2}$. $Al_{2}O_{3}/ZrO_{2}$ binary eutectic fibers recorded the highest tensile strength of about 1560MPa at room temperature. $Al_2O_3/YAG/ZrO_2$ternary eutectic fiber showed excellent thermal stability to $1200^{\circ}C$ without significant decrease. The maximum strength of ternary eutectic fibers recorded were 1100MPa at $25^{\circ}C$ and 970MPa at $1200^{\circ}C$, respectively.

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Atomic Layer Deposition (ALD) of ZrO2 in Ultrahigh Vacuum (UHV)

  • Roy, Probir Chandra;Jeong, Hyun Suck;Doh, Won Hui;Kim, Chang Min
    • Bulletin of the Korean Chemical Society
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    • v.34 no.4
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    • pp.1221-1224
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    • 2013
  • The atomic layer deposition (ALD) of $ZrO_2$ was conducted in ultrahigh vacuum (UHV) conditions. The surface was exposed to $ZrCl_4$ and $H_2O$ in sequence and the surface species produced after each step were identified in situ with X-ray photoelectron spectroscopy (XPS). $ZrCl_4$ is molecularly adsorbed at 140 K on the $SiO_2$/Si(111) surface covered with OH groups. When the surface is heated to 300 K, $ZrCl_4$ loses two Cl atoms to produce $ZrCl_2$ species. Remaining Cl atoms of $ZrCl_2$ species can be completely removed by exposing the surface to $H_2O$ at 300 K followed by heating to 600 K. The layer-by-layer deposition of $ZrO_2$ was successfully accomplished by repeated cycles of $ZrCl_4$ dosing and $H_2O$ treatment.