• 제목/요약/키워드: Zr-$TiO_2$

검색결과 945건 처리시간 0.021초

탐침형 정보 저장장치에 응용 가능한 강유전체 물질의 특성 연구 (Properties of Ferroelectric Materials Applicable to Nano-storage Media)

  • 최진식;김진수;황인록;변익수;김수홍;전상호;이진호;홍사환;박배호
    • 한국진공학회지
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    • 제15권2호
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    • pp.173-179
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    • 2006
  • Pulsed laser deposition 방법으로 증착한 $PbZr_{0.3}Ti_{0.7}O_{3}$ (PZT)박막의 구조적, 전기적 성질에 대한 연구를 하였다. PZT 박막은 $LaAlO_3$ 기판위에 동일한 조건으로 증착된 $LaMnO_3$ (LMO) 산화물을 하부 전극으로 하여 증착시간을 변화시키며 증착하였다. High-resolution x-ray diffraction 결과를 통해 LMO 하부 전극과 PZT 박막이 방향성 있게 자란 것을 확인할 수 있었고 박막의 두께는 field-emission scanning electron microscope을 통하여 측정할 수 있었다. 또한 우리는 atomic force microscopy을 이용하여 박막의 표면 거칠기를 구하였고 국소적인 범위의 전기적 특성은 piezoelectric force microscopy 모드를 이용하여 측정하였다. 그 결과 PZT/LMO 구조는 나노 스토리지의 미디어로 쓰이기 위해 필요한 성질들을 갖추었음을 알 수 있었다.

후막 센서 어레이를 이용한 화학 작용제 분류 (Classification of Chemical Warfare Agents Using Thick Film Gas Sensor Array)

  • 곽준혁;최낙진;반태현;임연태;김재창;허증수;이덕동
    • 한국군사과학기술학회지
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    • 제7권2호
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    • pp.81-87
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    • 2004
  • Semiconductor thick film gas sensors based on tin oxide are fabricated and their gas response characteristics are examined for four simulant gases of chemical warfare agent (CWA)s. The sensing materials are prepared in three different sets. 1) The Pt or Pd $(1,\;2,\;3\;wt.\%)$ as catalyst is impregnated in the base material of $SnO_2$ by impregnation method.2) $Al_2O_3\;(0,\;4,\;12,\;20\;wt.\%),\;In_2O_3\;(1,\;2,\;3\;wt.\%),\;WO_3\;(1,\;2,\;3\;wt.\%),\;TiO_2\;(3,\;5,\;10\;wt.\%)$ or $SiO_2\;(3,\;5,\;10\;wt.\%)$ is added to $SnO_2$ by physical ball milling process. 3) ZnO $(1,\;2,\;3,\;4,\;5\;wt.\%)$ or $ZrO_2\;(1,\;3,\;5\;wt.\%)$ is added to $SnO_2$ by co-precipitation method. Surface morphology, particle size, and specific surface area of fabricated sensing films are performed by the SEM, XRD and BET respectively. Response characteristics are examined for simulant gases with temperature in the range 200 to $400^{\circ}C$, with different gas concentrations. These sensors have high sensitivities more than $50\%$ at 500ppb concentration for test gases and also have shown good repetition tests. Four sensing materials are selected with good sensitivity and stability and are fabricated as a sensor array A sensor array Identities among the four simulant gases through the principal component analysis (PCA). High sensitivity is acquired by using the semiconductor thick film gas sensors and four CWA gases are classified by using a sensor array through PCA.

Sputtering법으로 성장한 PZT 박막의 Target의 Pb Excess에 따른 전기적 특성에 관한 연구 (Electrical characteristic of PZT thin film deposit by Rf-magnetron sputtering as Pb excess ratio of target)

  • 이규일;강현일;박영;박기엽;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.570-573
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    • 2002
  • Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

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계명산층내 알칼리 화강암 기원의 Nb-Y 광화작용에 수반되는 퍼구소나이트의 지구화학 및 산출특성 연구 (Geochemical and Petrographical Studies on the Fergusonite Associated with the Nb-Y Mineralization Related to the Alkaline Granite, Kyemyeongsan Formation, Korea)

  • 박맹언;김근수;최인식
    • 자원환경지질
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    • 제30권5호
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    • pp.395-406
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    • 1997
  • Some RE (Zr, Nb, REE) ore deposits are located in the middle part of the Korean peninsula. Geotectonically, the RE ore deposits situated on the Kyemyeongsan Formation of northern margin of the Okcheon geosynclinal belt and in the transitional zone between Kyeonggi massif and Okcheon belt. The rare metal deposits distributed in Kyemyeongsan Formation which consists of schist and alkaline granite. The alkali granite has suffered extensive post-magmatic metasomatism and hydrothermal processes. The ore contains mainly Ce-La, Ta-Nb, Y, Y-Nb, Ti-Nb-(U), Nd-Th group minerals. Fergusonite, one of Nb-Y rich REE minerals belonging to the A-B oxides, is most common mineral in the rare metal deposits. The fergusonite bearing rocks may be devided into four types by occurrence features and mineral association, that is, zircon type, allanite vein, feldspar type, and fluorite type. Fergusonites show wide variations in optical properties, due to part of differences in their chemical composition (depending on the types), but also the degree of crystalinity of the individual specimens. Fergusonite metamicts enclosed in biotite are generally surrounded by well developed pleochroic haloes. Usually, fergusonite is accompanied with zircon and other REE-bearing minerals. Petrographical and chemical data are presented for fergusonites which collected different types. $Nb_2O_3$ and $Y_2O_3$ contents range from 48.51 to 53.01 wt.% and 29.18 to 42.02 wt.% respectively. Also, $ThO_2$, (1.83~6.93), $UO_2$, (0.17~2.84), ${\sum}RE_2O_3$ (except to Y) (1.11~8.73), and $TiO_2$, (0.19~1.19 wt.%) contents show variational compositions according to fergusonite types. The ${\sum}RE_2O_3$ of fergusonites are positive relation with $Y_2O_3$ and negative relaton with $ThO_2$ and $({\sum}{RE_2O_3}-{Y_2O_3})$. The $Nb_2O_3$ is sightly negative relation with $Ta_2O_3$. Back-scattered electron microscope images (BEI) of fergusonite show the mineral composition and textural feature is very complicated. The variation of Nb, Th and REE content of fergusonite and the modes of occurrence of mineral, suggests that REE may have been mobilized during the circulation of hydrothermal fluids related to contact metamorphism (metasomatism). The chemical variation of the fergusonites with occurrences and mineral association can be related to metasomatism of alkaline fluid was probably the dominant ore-forming process in Chungju district.

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ICP를 이용한 Ar/$Cl_2/BCl_3$ 플라즈마에서 PZT 식각 특성 (The etching characteristics of PZT thin films in Ar/$Cl_2/BCl_3$ plasma using ICP)

  • 안태현;김경태;이영희;서용진;김창일;장의구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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    • pp.848-850
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    • 1999
  • In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

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소성온도에 따른 PSN-PNN-PZT 세라믹스에 미치는 압전특성 (Dielectric and Piezoelectric Characteristics of PSN-PNN-PZT Ceramics with the Sintering Temperature)

  • 남승현;류주현;이수호;박창엽;윤현상;안병렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.326-329
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    • 2002
  • In this study, to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, $0.02Pb(Sb_{1/2}Nb_{1/2})O_{3}-0.13Pb(Ni_{1/3}Nb_{2/3}O_3-0.85Pb(Zr,Ti)O_{3}$ system ceramics were manufactured with the variations of sintering temperature between 1,090 and $1240^{\circ}C$ and its dielectric and piezoelectric characteristics were investigated. With increasing the sintering temperature, electromechanical coupling factor (kp) and mechanical quality factor(Qm) were decreased. At $1,180^{\circ}C$ sintered specimen showed maximum value of 0.535 electromechanical coupling factor (kp). On the other hand,. The specimen sintered at $1,180^{\circ}C$ showed the maximum value of ${\varepsilon}r$=1,571, Qm=1,181 respectively.

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SHAPE EFFECT ON PERFORMANCE OF MULTILAYER CERAMIC ACTUATOR

  • Wee, S. B.;Jeong, S. J.;Song, J. S.
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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    • pp.163-168
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    • 2003
  • In the present study, the piezoelectricity and polarization of multilayer ceramic actuator, being designed to stack PMN-PZ-PT ceramic layers and Ag-Pd electrode layers alternatively, were investigated under a consideration of geometric factor, the volume ratio of the ceramic to the electrode layers. The actuators were fabricated by tape casting of $0.2Pb(Mg_{1/3}Nb_{2/3)O_3-0.38PbZrO_3-0,42PbTiO_3$ followed by lamination and burnout & co-firing processes. The actuators of $10\times10\times0.6~2\textrm{mm}^3$ in size were formed in a way that $60 ~ 200\mu\textrm{m}$ thick were stacked alternatively with $5\mu\textrm{m}$ thick electrode layer. Increases in polarization and electric field-induced displacement with thickness of the ceramic layer were attributed to change of $90^{\circ}$/$180^{\circ}$ domain ratio, which was affected by interlayer internal stress. The piezoelectricity and actuation behaviors were found to depend upon the volume ratio (or thickness ratio) of ceramic to electrode layers.

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A Materials Approach to Resistive Switching Memory Oxides

  • Hasan, M.;Dong, R.;Lee, D.S.;Seong, D.J.;Choi, H.J.;Pyun, M.B.;Hwang, H.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권1호
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    • pp.66-79
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    • 2008
  • Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

기반암에 따른 청풍지역 하상퇴적물의 지구화학적 특성 (Geochemical Characteristics of Stream Sediments Based on Bed Rocks in the Cheongpung Area)

  • 박영석;박대우;김종균;송영상;이장존
    • 자원환경지질
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    • 제39권6호
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    • pp.675-687
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    • 2006
  • 이 연구에서는 청풍지역 하상퇴적물에 대한 지구화학적 특성 규명을 통해, 주성분원소 및 미량원소에 대한 청풍지역의 자연배경치를 제시하고, 지구화학적 재해에 대해 예견하고자 한다. 이를 위해 물이 흐르고 있는 1차 수계를 대상으로 하상퇴적물시료를 채취하였고, 실험실에서 자연건조 시켰으며, 화학적 분석을 위해 알루미나 몰타르를 이용하여 200메쉬 이하로 분쇄하였다. 주성분원소 및 미량성분원소는 XRD, XRF, ICP-AES, NAA를 이용하여 분석하였다. 청풍지역 하상퇴적물의 기반암에 따른 지질집단별 지구화학적 특성 비교를 위해, 화강암질편마암지역, 메타텍틱편마암지역, 다도응회암지역, 유치역암 지역, 능주용암지역으로 분류하였다. 청풍지역 하상퇴적물 전체에 대한 주성분원소 함량은 $SiO_2\;47.31{\sim}72.81\;wt.%,\;Al_2O_3 \;11.26{\sim}21.88\;wt.%,\;Fe_2O_3\;2.83{\sim}8.39\;wt.%,\;CaO\;0.34{\sim}7.54\;wt.%,\;MgO\; 0.55{\sim}3.59\;wt.%,\;K_2O\;1.71{\sim}4.31\;wt.%,\;Na_2O\;0.56{\sim}2.28\;wt.%,\;TiO_2\;0.46{\sim}1.24\;wt.%,\;MnO\;0.04{\sim}0.27\;wt.%,\;P_2O_5\;0.02{\sim}0.45\;wt.%$이다. 청풍지역 하상퇴적물 전체에 대한 미량성분원소 및 희토류원소 함량은 $Ba\;700ppm{\sim}8990ppm,\;Be\;1.0{\sim}3.50ppm,\;Cu\;6.20{\sim}60ppm,\;Nb\;12{\sim}28ppm,\;Ni\;4.4{\sim}61ppm,\;Pb\;13{\sim}34ppm,\;Sr\;65{\sim}787ppm,\;V\;4{\sim}98ppm,\;Zr\;32{\sim}164ppm,\;Li\;21{\sim}827ppm,\;Co\;3.68{\sim}65ppm,\;Cr\;16.7{\sim}409ppm,\;Cs\;72{\sim}37.1ppm,\;Hf\;4.99{\sim}49.2ppm,\;Rb\;71.9{\sim}649ppm,\;Sb\;0.16{\sim}5.03ppm,\;Sc\;4.97{\sim}5ppm,\;Zn\;26.3{\sim}375ppm,\;Ce\;60.6{\sim}373ppm,\;Eu\;0.82{\sim}6ppm,\;Yb\;0.71{\sim}10ppm$의 범위를 보였다.

Structural Properties of PZT(80/20) Thick Films Fabricated by Screen Printing Method

  • Lee, Sung-Gap;Lee, Young-Hie
    • Transactions on Electrical and Electronic Materials
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    • 제6권2호
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    • pp.35-38
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    • 2005
  • Pb(Zr$_{0.8}$Ti$_{0.2}$)O$_{3}$ powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/Ah03 substrates. The structural properties were examined as a function of sintering temperature. The particle size distribution of the PZT powder derived from the sol-gel process is uniform with the mean particle size of about 2.6 m. As a result of the DTA, the formation of the polycrystalline perovskite phase was observed at around $890^{circ}$CC. In the X-ray diffraction analysis, all PZT thick films showed a perovskite polycrystalline structure without a pyrochlore phase. The perovskite crystallization temperature of PZT thick films was about $890^{circ}$C. The average thickness of the PZT thick films was approximately 80-90 m.