• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.255-258
• /
• 2000

In this study, the structural, dielectric and piezoelectric properties of Pb[(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$x/- (Ni$\sub$1/3/Nb$\sub$2/3/)$\sub$0.15-x/- (Zr,Ti)$\sub$0.85/]O$_3$(x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) ceramics is investigated as a function of Pb(Sb$\sub$1/2/Nb$\sub$1/2/)O$_3$ (abbreviated PSN) substitution. With the increase of PSN substitution, the crystal structure is transO$_3$formed from the tetragonal phase to the rhombohedral phase and the grain size is decreased abruptly. The curie temperature is decreased with the PSN substitution. The dielectric constant is increased with the PSN substitution and maximum value of 2290 is obtained at 4mol% PSN. With the PSN substitution, the coercive field is increased and the remnant polarization is decreased. The Electromechanical coupling factor(k$\sub$p/) Is showed the highest value of 0.622 at lmol% PSN and the mechanical quality factor(Q$\sub$m/) is decreased abruptly with the PSN substitution.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 추계학술대회 논문집
• /
• pp.206-210
• /
• 1997

In the fields of the optics, precise machine, semiconductors, the micro-positioning actuators are required for the control of position in the submicron range. PNN-P2N-PZT ceramics were fabricated with various mole ratio of the PZT[Pb(Zr$_{1}$2//Ti$_{1}$2)O$_3$]. PNN (Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$]and PZN[Pb(Zn$_{1}$3//Nb/sbu 2/3/)O$_3$] powders prepared by double calcination and PZT powders prepared by molten- salt synthesis method. The relative permittivity of specimen with PZT 0.3 mole ratio was shown 5,320 and appeared the relaxor ferroelectric feature. The maximum Piezoelectric coefficient d$_{31}$ to be used for evaluation the displacement of piezoceramics in PNN-PZN-PZT ceramics was 324$\times$10$^{-12}$ (C/V) at the vicinity of morphotropic phase boundary and was larger than that of solid PZT ceramics(120$\times$10$^{-12}$ C/V).

• 한국초전도ㆍ저온공학회논문지
• /
• 제12권3호
• /
• pp.44-48
• /
• 2010

Acoustic emission (AE) signal from an HTS tape has a low signal to noise ratio, due to the large amount of noise caused by the boiling of the liquid cryogen or mechanical vibration from the cryo-cooler. In an attempt to improve the sensitivity of the AE sensor, $Pb(Zr_{0.54}Ti_{0.46})O_3$ + 0.2 wt% $Cr_2O_3$ + 1.0 wt.% $Nb_2O_5$ ceramics sintered at $1200^{\circ}C$ was synthesized. In addition, the resonance ($f_r$) and anti-resonance frequencies ($f_a$) were measured using the specimens with various thicknesses (1.0, 1.5, 2.0, 2.5 and 3.0 mm). According to the test results, large AE signals with high frequencies were obtained from the AE sensor fabricated using a piezoelectric disc with a thinner thickness.

• 자원환경지질
• /
• 제39권3호
• /
• pp.329-342
• /
• 2006

이 연구에서는 곤양지역 하상퇴적물에 대한 지구화학적 특성을 규명하고 환경오염과 지질재해에 대해서 이해하고자 한다. 이를 위해 물이 흐르고 있는 1차 수계를 대상으로 하상퇴적물시료 178개를 채취하였고, 실험실에서 자연건조 시켰다. 시료는 알루미나 몰타르를 이용하여 200메쉬 이하로 분쇄하였고, XRD, XRF, ICP-AES, NAA분석을 실시하였다. 연구지역 하상퇴적물 지질집단별 지구화학적 특성 비교를 위해, 석영반암 지역, 퇴적암류 지역, 아노르도사이트 지역과 편마암류 지역으로 분류하였다. 곤양지역 하상퇴적물의 주성분원소 함량은 $SiO_2\;41.86{\sim}76.74\;wt.%,\;Al_{2}O_{3}\;9.92{\sim}30.00\;wt.%,\;Fe_{2}O_{3}\;2.74{\sim}12.68\;wt.%,\;CaO\;0.22{\sim}3.31\;wt.%\;,MgO\;0.34{\sim}3.97\;wt.%,\;K_{2}O\;0.75{\sim}0.93\;wt.%,\;Na_{2}O\;0.25{\sim}1.92\;wt.%,\;TiO_{2}\;0.40{\sim}3.00\;wt.%,\;MnO\;0.03{\sim}0.21\;wt.%,\;P_{2}O_{5}\;0.05{\sim}0.38\;wt.%$이다. 하상퇴적물의 미량성분원소 및 희토류원소 함량은 $Cu\;7{\sim}102\;ppm,\;Pb\;15{\sim}47\;ppm,\;Sr\;48{\sim}513\;ppm,\;V\;29{\sim}129\;ppm,\;Zr\;31{\sim}217\;ppm,\;Li\;14{\sim}94\;ppm,\;Co\;5.6{\sim}32.1\;ppm,\;Cr\;23{\sim}259\;ppm,\;Cs\;1.7{\sim}8.7\;ppm,\;Hf\;2.1{\sim}109.0\;ppm,\;Rb\;34{\sim}247\;ppm,\;Sc\;4.5{\sim}21.9\;ppm,\;Zn\;24{\sim}609\;ppm,\;Sb;0.8{\sim}2.6\;ppm,\;Th\;3{\sim}213\;ppm,\;Ce\;22{\sim}1000\;ppm,\;Eu;0.7{\sim}5.3\;ppm,\;Yb\;0.6{\sim}6.4\;ppm$의 범위를 보인다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.11-11
• /
• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• 한국전기전자재료학회논문지
• /
• 제19권9호
• /
• pp.838-842
• /
• 2006

0.03Pb$(Sb_{0.5}Nb_{0.5})O_{3}-0.03Pb(Mn{1/3}Nb{2/3)O_{3}-(0.94-x)PbTiO_{3}-xPbZrO_{3}$ ceramics doped with $CeO_{2}$ were synthesized by conventional bulk ceramic processing technique. Phases analysis, microstructures and piezoelectric properties were investigated as a function of $CeO_{2}$ content (0.03, 0.05, 0.1 0.3, 0.5 and 0.7 wt%). Microstructures and phases information were characterized using a scanning electron microscope (SEM) and an X-ray diffractometer (XRD). Mechanical quality factor ($Q_{m}$) and coupling factor(kp) were obtained from the resonance measurement method. Both $Q_{m}$ and $k_{p}$ were shown to reach to the maximum at 0.1 wt% $CeO_{2}$. In order to evaluate the stability of resonance frequency and effective electromechanical coupling factor ($K_{eff}$) as a function of $CeO_{2}$, the variation of resonance and anti-resonance frequency were also measured using a high voltage frequency response analyzer under various alternating electric fields from 10 V/mm to 80 V/mm. It was shown that the stability of resonance frequency and effective electromechanical coupling factor were increased with increasing the $CeO_{2}$ contents.

• 한국전기전자재료학회논문지
• /
• 제14권5호
• /
• pp.370-375
• /
• 2001

PZT thin films (3500${\AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$\sub$1.50/(Zr$\sub$0.52/,Ti$\sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{\circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{\circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{\circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{\circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${\mu}$C/$\textrm{cm}^2$, saturation polarization 42${\mu}$C/$\textrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$\^$-7/A/$\textrm{cm}^2$, remanent polarization were decreased by 30% after 10$\^$9/ cycles.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.158-158
• /
• 2009

기계적 에너지를 전기적 에너지로 변환하는 에너지 변환소자인 압전 세라믹스는 액추에이터, 변압기, 초음파모터 및 각종 센서로 응용되고 있으며, 그 응용분야는 크게 증가하고 있다. 최근에는 이러한 압전 소자를 앞으로 도래하는 ubiquitous, 무선 모바일 시대의 휴대용 전자제품, robotics 등의 분야에 적용하기 위하여 소형화 및 경량화를 구현하고자 다양한 연구가 진행되고 있다. 본 연구에서는 압전 특성이 우수한 PNN-PMN-PZT 삼원계 세라믹을 이용하여 압전 트랜스포머를 제작하고 전기적 특성을 평가하였다. 압전트랜스포머는 전왜-압전효과를 이용한 소전력용 고전압발생소자로서 종래의 권선형 트랜스포머에 비교해서 소형, 경량이면서 승압비가 높고 구조가 간단하므로 직류 고전압전원에 응용되고 있다. 압전트랜스의 이론적인 고찰은 Rosen 이후로 많은 연구자들에 의해서 보고되었다. 그런데 압전세라믹트랜스는 공진 시 강력한 에너지변환을 하기 때문에 재료의 물리적 특성이 매우 중요함에도 불구하고, 이러한 물리적 특성에 관한 연구는 거의 없었다. 따라서 본 연구에서는 물리적 특성과 전기적 특성의 상호 연관성을 고찰하고자 하였다. 압전트랜스용 재료는 전기기계결합계수($k_p$)와 기계적품질계수(Qm)가 높아야 한다. 전기기계결합계수를 높이기 위해서는 상경계 조성의 Pb(Zr,Ti)$O_3$[PZT]계 세라믹스가 가장 우수하다. 본 연구에서는 기계적 품질계수를 향상시키기 위해서 $Pb(Nn_{1/3}Nb_{2/3})_{0.06+x}(Mn_{1/3}Nb_{2/3})_{0.065-x}(Zr_{0.48}Ti_{0.52})_{0.875}0_3$계의 조성을 설계하여 압전특성을 평가하고 미세구조를 분석하였다. 또한 압전트랜스를 제작하여 입출력의 승압비 및 주파수 특성 등도 평가하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
• /
• pp.8-11
• /
• 2001

In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

• Transactions on Electrical and Electronic Materials
• /
• 제7권2호
• /
• pp.72-75
• /
• 2006

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(Zr/Ti=60/40) paste was made and alternately screen-printed on the $Al_2O_3$ substrates. We have introduced a press-treatment to obtain a good densification of screen printed films. The porosity of the thick films was decreased with increasing the applied pressure and the thick films pressed at $0.6ton/cm^2$ showed the dense microstructure and thickness of about $76{\mu}m$. The relative dielectric constant increased with increasing the applied pressure. The remanent polarization and coercive field increased with increasing applied pressure and the values for the PZT thick films pressed at $0.6ton/cm^2$ were $16.6{\mu}C/cm^2$, 76.9 kV/cm, respectively.