• 제목/요약/키워드: ZnTe alloys

검색결과 5건 처리시간 0.013초

Extensive investigations of photon interaction properties for ZnxTe100- x alloys

  • Singh, Harinder;Sharma, Jeewan;Singh, Tejbir
    • Nuclear Engineering and Technology
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    • 제50권8호
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    • pp.1364-1371
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    • 2018
  • An extensive investigation of photon interaction properties has been made for $Zn_xTe_{100-x}$ alloys (where x = 5, 20, 30, 40, 50) to explore its possible use in sensing and shielding gamma radiations. The results show better and stable response of ZnTe alloys for various photon interaction properties over the wide energy range, with an additional benefit of ease in fabrication due to lower melting points of Zn and Te. Mass attenuation coefficient values show strong dependence on photon energy as well as composition. Effective atomic number has maximum value for $Zn_5Te_{95}$ and lowest for $Zn_{50}Te_{50}$ in the entire energy region. The alloy sample with maximum $Z_{eff}$ shows minimal value of $N_e$ and vice versa. Mean free path follows inverse trend as observed for mass attenuation coefficient. The exposure and energy absorption buildup factors depend upon photon energy, penetration thickness and composition (effective atomic number) of $Zn_xTe_{100-x}$ alloys. It finds its application for sensing and shielding from highly energetic and highly penetrating photons at sites where radioactive materials were used and visibility of material is not a big constraint. Further, energy down conversion property of ZnTe alloys with subsequent emission in green band suggests its potential use in sensing gamma photons.

$ZnS_{1-x}Te_x$ 삼원 화합물 반도체의 라만 산란 특성 (Characteristics of Raman scattering spectroscopy for $ZnS_{1-x}Te_x$ alloy semi- conductor)

    • 한국결정성장학회지
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    • 제12권5호
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    • pp.223-228
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    • 2002
  • $_ZnS{1-x}Te_x$삼원 화합물의 전 영역에서 상온 라만 스펙트럼을 연구하였다. 격자진동 모드가 두 방식의 거동을 보이고, Te 조성비 x에 따라 라만 선 모양의 비대칭성과 넓어짐이 변하였다. 선 모양의 비대칭성 넓어짐은 공간적인 상호관계(spatial correlation)모형을 이용하여 설명하였다.

ZnSSe:Te/ZnMgSSe DH 구조 청색~녹색발광다이오드의 개발 (Development of ZnSSe:Te/ZnMgSSe DH structure Blue~Green tight Emitting Diodes)

  • 이홍찬
    • Journal of Advanced Marine Engineering and Technology
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    • 제27권1호
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    • pp.33-41
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    • 2003
  • The optical properties of $ZnS_ySe_{1-\chi-y}:Te_{\chi}(\chi<0.08,y~0.11)$ alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_1 and Te_n(n\geq2)$cluster bound excitons, respectively. Bright green (535 nm) and blue (462 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The turn-on voltage of 2.1 V in current-voltage characteristics is very small compared to that of commercial InGaN-based LEDs (>3.4 V), indicating the formation of a good ohmic contact due to the optimized p-ZnSe/p-ZnTe multi-quantum well (MQW) superlattice electrode layers.

A Study on ZnSSe : Te/ZnMgSSe DH Structure Blue and Green Light Emitting Diodes

  • Lee Hong-Chan
    • Journal of Advanced Marine Engineering and Technology
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    • 제29권7호
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    • pp.795-800
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    • 2005
  • The optical properties of $ZnS_{y}Se_{1-x-y}:Te_x\;(x\;<\;0.08,\;y\∼0.11$) alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_{1}$Tel and $Te_{n}$ (n$\geq$2) cluster bound excitons, respectively. Bright blue (462 nm) and green (535 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer.

Bi계화합물 반도체에 의한 열전발전 (Thermoelectric Power Generation by Bi Alloy Semiconductors)

  • 박창엽
    • 대한전자공학회논문지
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    • 제5권3호
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    • pp.1-8
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    • 1968
  • 이 열전발전기는 Bi계화합물 반도체 Sb2Te3 및 소량의 불순물을 함유한 ZnSb를 사용하여 실험한 것으로 열기전력 α, 비저항ρ, 열전도율k 및 고온부의 온도차를 측정하였다. 특성은 다른 재료를 사용한 열전발전기보다 Sb2Te3+Bi2Se3와 Bi3Te2+Sb2Te3를 소자로 사용한 경우 효율이 우수하였으며 이의 효율은 1.42%였다.

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