• 반도체디스플레이기술학회지
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• 제16권1호
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• pp.70-74
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• 2017

To research the electrical properties of ZnS thin films with various annealing conditions, ZnS was prepared by RF magnetron sputtering system and annealed in a vacuum for 10 minutes. All films were analyzed by the XRD, PL and I-V measurement system. The XRD pattern of ZnS film annealed at $100^{\circ}C$ was shifted to lower 2 theta because of the formation of a depletion region at the interface between a substrate and ZnS thin film, and the capacitance was abruptly increased. However, the pattern of XRD of ZnS film annealed at $100^{\circ}C$ with a Schottky contact was showed the amorphous structure, and the current-voltage characteristics were non-linearly observed by the Schottky contact.

• 한국진공학회지
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• 제16권3호
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• pp.205-209
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• 2007

Atomic layer deposition(ALD)를 이용하여 Si와 soda lime glass 기판 위에 ZnO 박막을 증착하였다. 기판의 온도는 비교적 저온인 $130^{\circ}C{\sim}150^{\circ}C$를 채택하였다. 증착결과 단위 cycle 당 $2.72{\AA}$이 증착되어 균일한 박막이 증착되었음이 확인되었다. 증착된 박막의 결정성을 X-ray diffraction(XRD)으로 조사해본 결과 비교적 저온에서도 (100)과 (101)방향의 성장이 우세하였다. 또 Auger electron spectroscopy(AES)로 분석해본 결과 불순물이 없는 순도 높은 박막이 성장되었음을 알 수 있었다.

• 한국세라믹학회지
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• 제40권6호
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• pp.547-552
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• 2003

RF 마그네트론 스퍼터링법을 이용하여 유리기판위에 인가전력 100 W, 1.33Pa, Ar/O2=50 : 50, 20$0^{\circ}C$ 그리고 타겟과 기판사이의 거리 4 cm의 조건으로 ZnO 압전 박막을 성장시켰다. 증착된 박막의 결정성, 표면형상, 화학적 결합비와 전기적 특성을 XRD, SEM, AFM, RBS와 electrometer를 이용하여 측정 분석하였다 제조된 박막은 우수한 c축 우선 배향성을 보였고 또한 화학 양론적인 결합비를 나타내었다. 전극 구조가 single 및 double IDT를 갖는 ZnO/1DT/glass SAW 필터를 제작하여 특성을 분석한 결과, 전파속도는 각각 2,589 m/sec, 2,533 m/sec이었고, 삽입손실은 -11 dB과 -21 dB 값을 나타내어 박막형 SAW 필터로 응용이 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.310-310
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• 2012

ZnO thin films were grown on porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The optical properties of the ZnO thin films grown on PS were studied using room-temperature, low-temperature, and temperature-dependent photoluminescence (PL). The full width at half maximum (FWHM) of the near-band-edge emission (NBE) from the ZnO thin films was 98 meV, which was much smaller than that of ZnO thin films grown on a Si substrate. This value was even smaller than that of ZnO thin films grown on a sapphire substrate. The Huang-Rhys factor S associated with the free exciton (FX) emission from the ZnO thin films was found to be 0.124. The Eg(0) value obtained from the fitting was 3.37 eV, with ${\alpha}=3.3{\times}10^{-2}eV/K$ and ${\beta}=8.6{\times}10^3K$. The low- and high-temperature activation energies were 9 and 28 meV, respectively. The exciton radiative lifetime of the ZnO thin films showed a non-linear behavior, which was established using a quadratic equation.

• 한국표면공학회지
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• 제48권6호
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• pp.322-328
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• 2015

We investigated the diffusion behaviors, electrical properties, microstructures, and composition of In-Ga-Zn-O (IGZO) oxide thin films deposited by radio frequency reactive magnetron sputtering with increasing annealing temperatures. The samples were deposited at room temperature and then annealed at 300, 400, 500, 600 and $700^{\circ}C$ in air ambient for 2 h. According to the results of time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy, no diffusion of In, Ga, and Zn components were observed at 300, 400, 500, $600^{\circ}C$, but there was a diffusion at $700^{\circ}C$. However, for the sample annealed at $700^{\circ}C$, considerable diffusion occurred. Especially, the concentration of In and Ga components were similar at the IGZO thin film but were decreased near the interface between the IGZO and glass substrate, while the concentration of Zn was decreased at the IGZO thin film and some Zn were partially diffused into the glass substrate. The high-resolution transmission electron microscopy results showed that a phase change at the interface between IGZO film and glass substrate began to occur at $500^{\circ}C$ and an unidentified crystalline phase was observed at the interface between IGZO film and glass substrate due to a rapid change in composition of In, Ga and Zn at $700^{\circ}C$. The best values of electron mobility of $15.5cm^2/V{\cdot}s$ and resistivity of $0.21{\Omega}cm$ were obtained from the sample annealed at $600^{\circ}C$.

• 센서학회지
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• 제31권4호
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• pp.255-259
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• 2022

In this study, we fabricated ZnS substrates with excellent transmittance in the mid-infrared region (3-5 ㎛) using hot pressing instead of conventional chemical vapor deposition (CVD). Diamond-like carbon (DLC) was coated on either one or both sides of the ZnS substrates to improve their mechanical properties and transmittance efficiency. To reduce the reflectance and further improve transmittance in the mid-infrared region, anti-reflection (AR) coating was designed for DLC/ZnS /AR and AR/ ZnS /AR structures. The coating structure, microstructure, and optical properties of the AR-coated ZnS substrates were subsequently investigated by employing energy dispersive X-ray spectroscopy, scanning electron microscopy, and Fourier-transform infrared (FTIR) spectroscopy. The FTIR spectroscopy results demonstrated that, in the mid-infrared region, the average transmittance of the samples with AR coating on one and both sides increased by approximately 18% and 27%, respectively. Thus, AR coating improved the transmittance of the ZnS substrates.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 추계학술발표회초록집
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• pp.58-58
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• 2003

Silver doped ZnO (SZO) films were prepared by rf magnetron sputtering on glass substrates with extraordinary designed ZnO target. With the doping source for target, use AgNO$_3$ powder on a various rate (0, 2, and 4 wt.%). We investigated dependence of coating parameter such as dopant content in target and substrate temperature in the SZO films. The SZO films have a preferred orientation in the (002) direction. As amounts of the Ag dopant in the target were increased, the crystallinity and the transmittance and optical band gap were decreased. And the substrate temperature were increased, the crystallinity and the transmittance were increased. But the crystallinity and the transmittance of SZO films were retrograde at 200$^{\circ}C$. Upside facts were related with composition. In addition, the Oxygen K-edge features of the SZO films were investigated by using near edge X-ray absorption fine structure (NEXAFS) spectroscopy. Changes of optical band gap of the SZO films were explained compared with XRD, XPS and NEXAFS spectra.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.415-418
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• 1999

In this paper we studied that the effect of substrate temperature on crystallography and electrical properties of ZnO thin films. Facing Targets Sputtering system can deposit thin films in plasma-free situation and change the deposition condition in wide range. And prepared thin film\`s c-axis orientation and grain size were analyzed by XRD(x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.953-956
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• 2003

Transparent conductive ZnO:Ga thin films were deposited on glass substrates using rf magnetron sputtering method for flat panel display. The ZnO:Ga films were preferentially oriented to c-axis (002) of on substrates. The surface morphology was smooth and had not porous whatever substrate temperature was. The electrical conductivity of the thin films were in the range of $1.6{\times}10^2{\sim}6.7{\times}10^3\;{\Omega}^{-1}cm^{-1}$ at the growth temperature from 50 to $400^{\circ}C$, whereas has a maximum at around $250^{\circ}C$. By combining of XRD and EXAFS, the crystallinity and grain size decreased with increasing substrate temperature corresponding to the reduction of the grain-boundary scattering. The optical transmittance of sputtered ZnO:Ga thin films had an improved about 86% in the UV-visible region.

• 한국항해항만학회지
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• 제26권1호
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• pp.120-126
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• 2002

ZnS 박막을 Hot W긴 법에 의해 증발관 온도, 기판온도 및 외부로부터 유황(5)의 공급을 변수로 하여 제작하여 광학적, 결정 구조적 특성을 분석 ·검토하였다 박막의 증착속도는 증발관 온도 및 5 증기압을 높일수록 증가하였으나 기관온도를 높이면 급격히 감소하였다. 박막의 광학적 특성은 증착속도와 밀접하게 관계하고 있다고 사료되며, 실온에서의 금지대 폭은 이론 값보다 작은 3.46∼3.72ev를 나타내어 결정 중에 결함이 존재함을 알 수 있었다. 박막의 구조를 분석한 결과 어느 경우에 있어서나 섬아연광 구조의 (111) 주 배향성을 나타내었으나 회절피크의 강도 및 반치폭으로부터 결정성은 대체로 양호하지 못했음을 알았다. 그러나, 기판온도 또는 5 공급 등의 제작조건에 따라 광학적, 결정적 특성이 개선되었다.