• Transactions on Electrical and Electronic Materials
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• 제13권5호
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• pp.262-265
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• 2012

The Microstructure and nonlinear electrical properties of the ZPCCYT (ZnO-$Pr_6O_{11}$-CoO-$Cr_2O_3$-$Y_2O_3$-$Tb_4O_7$) varistors were investigated for different amounts of $Tb_4O_7$. The addition of $Tb_4O_7$ has a significant effect on microstructure and electrical properties. Analysis of the microstructure indicated that the ceramics consisted of ZnO grain as a main phase and a few secondary phases as a mix of $Pr_6O_{11}$, $Y_2O_3$, and $Tb_4O_7$. As the amount of $Tb_4O_7$ increased, the sintered densities of pellets increased from $\rho$ = 5.70 to $5.78g/cm^3$ and the average grain size decreased from d = 4.8 to $3.6{\mu}m$. The increase in the amount of $Tb_4O_7$ increased from $E_B$ = 7,473 to 10,035 V/cm and from ${\alpha}$ = 39.7 to 52.2. In particular, it was found that the ceramics modified with 1.0 mol% in the amount of $Tb_4O_7$ are suited for the varistors for high voltage in the light of a high sintered density and a high voltage gradient.

• 전기의세계
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• 제31권6호
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• pp.445-449
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• 1982

This Paper describes the influence of additive concentrations and sintering temperature on the surge protection performance in ZnO ceramic varistors. It is found from the experiments that the metal-oxide semiconductors based oi ZnO with an additive incorporation of 0.50% molx(Bi$\_$2/O$\_$3/+MnO+CoO+Cr$\_$2/O$\_$3/+2Sb$\_$2/O$\_$3/) and sintered at 1250.deg. C present excellent V-I characteristics in view of transient surge suppression. Gapless arrester element with aluminum electrodes shows also good reliability against impulse shock and marks a low voltage clamping ratio(V$\_$1KA/V$\_$1mA/<2.0) compared with the conventional SiC varistors.

• 대한전자공학회논문지
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• 제26권8호
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• pp.1211-1216
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• 1989

To enhance the breakdown properties of low voltage-oriented ZnO varistor, sample were fabricated with additive oxides and sintering conditions. Addition of TiO2 lowered breakdown voltage` nonlinear resistances were lowered about 10V/mm and nonlinear exponents were not lowered with respect to it with the basic composition. To the samples added TiO2, V2ko5, and Cr2O3, microstructures were observed by SEM, moreover Ti was detected at grainboundaries and within the grain by EDS. Addition of Si-oxides and Sb2O3 increased nonlinear exponent and also increased nonlinear resistance, by addition of TiO2 to these samples at the sintering conditions of 1250\ulcorner and 1 hour we could fabricate low voltage-oriented ZnO varistors with nonlinear exponent of 30 or more and with real breakdown voltage of 30V/mm.

• Transactions on Electrical and Electronic Materials
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• 제9권3호
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• pp.96-100
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• 2008

The microstructure, voltage-current, and capacitance-voltage relations ofP CCYA doped ZnO-based varistors were investigated for different amounts of $Al_2O_3$. As the $Al_2O_3$ amount increased, the average grain size (d) increased from d=4.3 to $d=5.5{\mu}m$ and the sintered density $({\rho})$ increased from ${\rho}=5.63$ to ${\rho}=5.67g/cm^3$. As the $Al_2O_3$ amount increased, the breakdown voltage $(V_B)$ increased from $V_B=633$ to $V_B=71$ V/mm and the non-ohmic coefficient $({\alpha})$ increased from ${\alpha}=47$ to ${\alpha}=4$. $Al_2O_3$ served as a donor due to the donor density $(N_d)$, which increases in the range of $N_d=0.77-1.85{\times}10^{18}/cm^3$ with increasing amount of $Al_2O_3$.

• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.391-396
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• 2023

Recently, as power and electronic devices have increased in frequency and capacity, it has become a major concern to protect electronic circuits and electronic components used in these devices from abnormal voltages such as various surges and pulse noise. To respond to variously rated voltages applied to power electronic devices, the rated voltages of various varistors can be obtained by controlling the size of internal particles of the varistor or controlling the number of layers of the varistor. During bonding, the problem of unbalanced thermal runaway occurring between the electrode and the varistor interface causes degradation of the varistor and shortens its life of the varistor. In this study, to solve the problem of unbalanced heat distribution of stacked varistors to adjust the operating voltage, the contents of the ZnO-based varistor composition were 96 wt% ZnO, 1 mol% Sb₂O₃, 1 mol% Bi₂O₃, 0.5 mol% CoO, 0.5 mol% MnO, and 1 mol% TiO₂. A multi-layered ZnO varistor was modeled by bonding a single varistor with a composition in three layers according to the operating voltage. The thermal distribution of the triple-layered ZnO varistor was analyzed for the thermal runaway phenomenon that occurred during varistor operation using the finite element method according to Comsol 5.2.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.190-193
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• 2001

ZnO varistors have been widely used to protect power system and electronic system against overvoltages based on their excellent nonlinearity. In order to increase their protection capability, the fracture and protection technologies of arresters have to study according to their applications, namely ImA DC voltage, leakage currents, impulse residual voltages, withstanding capability to impulse surge, and energy absorption capability. ZnO varistors which have nonlinear current-voltage characteristic name a number of failure mechanism when ZnO elements absorb surge energies. Failure mode by thermal stress and Pin hole are among the most common failure mechanism at the high current surge current. In this study, the fracture mechaism of power arresters are introduced and protection technologies are researched. In particular the effect of thermal stress by surge currents to ZnO elements and methods against arc surge energy through withstand structure design of arrester are discussed.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.231-236
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• 2005

To investigate the electrical properties at the single grainboundary of ZnO varistors, micro-electrodes were fabricated on the surface which was polished and thermally etched. Our micro-electrode had 2000 $\AA$ silicon nitride layer between micro-electrode and ZnO surface. This layer was deposited by PECVD and etched by RIE after photoresistor pattering process using by mask 1. The metal patterning of micro-electrodes used lift-off method. We found that the breakdown voltage of single grainboundary is about 3.5∼4.2 V at 0.1 mA on I-V curves. Also, capacitance-voltage measurement at single grainboundary gave several parameters( $N_{d}$, $N_{t}$, $\Phi$$_{b}$, t) which were related with grainboundary.ary.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.344-345
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• 2005

The characteristics of varistors based on M.Matstuokas with one another ZnO powder (50nm, 100nm, 300nm) have been investigated. The optimum calcination and sintering temperature was also selected for each samples. Varieties of sintering conditions were found according to powder size. As the result of analysises on each operating voltages. We obtained the most high voltage in a sample with 50nm ZnO powder.

• 한국세라믹학회지
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• 제34권12호
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• pp.1275-1281
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• 1997

ZnO varistors containing 5.0 at% Co3O4 and Pr6O11, ranging from 0.1 to 1.0 at%, were sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$. The I-V characteristics and nonlinear coefficients of the specimens were investigated with respect to Pr addition and sintering temperature. In general the specimens sintered at 130$0^{\circ}C$ showed better varistor characteristic than those fired at 135$0^{\circ}C$, which seemed to be related with the liquid phase formation during sintering. The barrier heights obtained from C-V relations, 0.29-1.36 eV, were different from those acquired using resistivity-temperature plots measured at low voltage per grain boundary. Therefore the estimation of potential barrier heights using C-V relations is better suited for the specimens prepared in this study. The carrier densities obtained using C-V relations were ~1018 cm-3.

• 한국전기전자재료학회논문지
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• 제15권8호
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• pp.664-670
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• 2002

The electrical characteristics of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Y_2O_3$(ZPCCY)-based varistors were investigated with $Y_2O_3$ content in the range of 0.0~4.0 mol%. As $Y_2O_3$ content is increased, the average grain size was markedly decreased in the range of 18.6~3.2 $\mu m$ and the density of the ceramic was decreased in the range of 5.53 ~3.74 $g/\textrm{cm}^3$. While, the varistor voltage was increased in the range of 39.4~748.1 V/mm and the nonlinear exponent was in the range of 4.5~51.2 with increasing $Y_2O_3$ content. The addition of $Y_2O_3$ greatly enhanced the nonlinear properties of varistors, compared with the varistor without $Y_2O_3$. In particular, the varistors with $Y_2O_3$content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 51.2 and the leakage current is 1.3 $\mu A$. The donor concentration and the density of interface states were decreased in the range of (4.19~0.14) $\times$10$^{18}$ /㎤ and (5.38~1.15)${\times}10^{18}/\textrm{cm}^3$, respectively, with increasing $Y_2O_3$ content.