• 제목/요약/키워드: ZnO Varistor

검색결과 285건 처리시간 0.055초

배전급 피뢰기(18kV, 5kA)용 산화아연바리스타의 성능향상에 관한 연구 (A Study on the Improvement of ZnO Varistor for Distribution Class Surge Arrester(18kV, 5kA))

  • 유덕선;윤한수;김석수;최연규;장성도
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.744-746
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    • 2003
  • A ZnO varistor with reference voltage 250V/mm was fabricated through the control of particle size in slurry and the variation of sintering conditions. It was found that to measure the flatness of the V-I characteristic curve in the small-current region and the flatness of the V-I characteristic curve in a large-current region was improved nonlinearity of the fabricated ZnO varistor. According to the IEC 60099-4 was measured the accelerated aging test and high current test of the distribution class surge varistor which is excellent in respect to the property of ZnO varistor.

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다양한 첨가물에 의한 고전압 ZnO 바리스터의 미세구조 (Microstructure of High Voltage ZnO Varistors by Various Addition.)

  • 오수홍;기현철;장동환;홍경진;김태성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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    • pp.185-189
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    • 2000
  • ZnO varistor has many merits as compared with SiC varistor. But, because of leakage current and non-linear coefficient, it has unstable function properties. For the purpose of improvement of ZnO varistor properties, ZnO varistor is studied according to sintering condition and mixing condition. ZnO varistor, $ZnO-Bi_2O_2-Y_2O_3-MnO-Cr_2O_3-Sb_2O_3$ series, is fabricated with $Sb_2O_3$ mol ratio(0.5-4[mol%]) and sintered at $1250[^{\circ}C]$ In accordance with $Sb_2O_3$ mol ratio and sintering temperature, grain size and non-linear coefficient are measured. The specimen, $Sb_2O_3$ mol ratio is 1[mol%], has small grain size. It has best properties because of its liquid phase shape. When $Sb_2O_3$ mol ratio is 1[mol%], grain size is decreased.

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$ZnO-Pr_{6}O_{11}$계 바리스터 세라믹스의 직류가속열화 특성 (DC Accelerated Aging Characteristics of $ZnO-Pr_{6}O_{11}$ Based Varistor Ceramics)

  • 김향숙;남춘우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.330-333
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    • 2002
  • The stability against DC accelerated aging stress of $Dy_{2}O_{3}-doped$ $ZnO-Pr_{6}O_{11}-based$ varistor ceramics was investigated. The calculated nonlinear exponent$(\alpha)$ in varistor ceramics without $Dy_{2}O_{3}$ was only 4.9, whereas the $\alpha$ value of the varistors with $Dy_{2}O_{3}$ was abruptly increased in the range of 48.8 to 58.6. The varistor ceramics with $Dy_{2}O_{3}$ content of 1.0 mol% exhibited maximum ${\alpha}$, reaching 58.6, whereas they exhibited very poor stability. While, The varistor ceramics doped with 0.5 mol% $Dy_{2}O_{3}$ exhibited not only the high nonlinearity, which the ${\alpha}$ is 55.3 and the leakage current is $0.1{\mu}A$, but also the highest stability, which the variation rates of varistor voltage and nonlinear exponent are -0.8% and -14.3%, respectively, under DC accelerated aging stress, $0.95 V_{1mA}/150^{\circ}C/24h$.

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$La_2O_3$가 첨가된 Pr계 ZnO 바리스터의 미세구조와 전기적 특성 (The Microstructure and Electrical Characteristics of Pr-Based ZnO Variators with $La_2O_3$Additives)

  • 남춘우;박춘현
    • 한국전기전자재료학회논문지
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    • 제11권11호
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    • pp.969-974
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    • 1998
  • The effects of $La_2O_3$on the microstructure and electrical characteristics of Pr-based ZnO varistors were investigated. The average grain size increased in the range of 21.9~56.3$\mu$ m with increasing $La_2O_3$additive content(0.0~2.0 mol%). La was, of course grain boundary, largely segregated at the nodal point. As $La_2O_3$additive content increases, threshold voltage and nonlinear coefficient decreased and leakage current increased. In particular, 2.0 mol% $La_2O_3$-added varistor exhibited low threshold voltage 17.0V/mm and nonlinear coefficient of about 6. Based on these results, this varistor can be said to be used as low-voltage varistor, if nonlinear coefficient is somewhat improved forward.

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$Y_2O_3$ 첨가에 따른 ZnO:Pr 바리스터의 미세구조 및 전기적 특성에 관한 연구 (A Study on the Microstructure and Electrical Properties of ZnO:Pr Varistor with $Y_2O_3$Additive)

  • 남춘우;정순철;이외천
    • 한국전기전자재료학회논문지
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    • 제11권1호
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    • pp.48-56
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    • 1998
  • Pr\ulcornerO\ulcorner-based ZnO varistors were fabricated in the range of $Y_2$O$_3$additive content from 0.5 to 4.0mol%, and its microstructure and electrical properties were investigated. Yttrium was distributed nearly in the grain boundaries and the cluster phase formed at nodal point but more in cluster phase. The average grain size was decreased markedly from 34.9 to 8.6${\mu}{\textrm}{m}$ with increasing $Y_2$O$_3$additive content. It is believed that the decrease of grain size is attributed to the formation of cluster phase and the weakening of driving force for liquid sintering. As a result, $Y_2$O$_3$was acted as the inhibitor of the grain growth. With increasing $Y_2$O$_3$additive content, the varistor voltage, the activation energy, and the nonlinear exponent increased whereas the leakage current decreased, especially 4.0mol% $Y_2$O$_3$-added varistor exhibited very good I-V characteristics; nonlinear exponent 87.42 and leakage current 46.77nA. On the other hand, as $Y_2$O$_3$additive content increases, the varistor showed tendency of the salient decrease for donor concentration and the increase for barrier height. Conclusively, it is estimated that ZnO:Pr varistor compositions added more than 2.0mol% $Y_2$O$_3$are to be used to fabricate useful varistors.

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Nonuniformity of Energy Absorption Capabilities of ZnO Varistors

  • He, Jin-Liang;Han, Se-Won;Cho, Han-Goo;Kang, Hyung-Boo
    • The Korean Journal of Ceramics
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    • 제4권1호
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    • pp.47-52
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    • 1998
  • The nonuniformity of energy absorption capability of ZnO varistor is systematically discussed in this paper. The nonuniformity of electrical characteristics and microstructure leads to decrease the energy absorption capability of ZnO varistor. The energy absorption capabilities were measured under different current waves, the experimental results stated that they have highly scattered phenomena. The influences of varistor surface area and nonuniformity of electrical characteristics to the energy absorption capability and the nonuniformity of commercial ZnO varistors were analyzed. There is a high nonuniformity existing in the energy absorption capability of commercial ZnO varistors.

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ZnO 바리스터와 가스방전관의 V-I 특성 (V-I Characteristic of ZnO Varistor and GDT)

  • 조성철;엄주홍;이태형;한후석
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2006년도 춘계학술대회 논문집
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    • pp.355-359
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    • 2006
  • ZnO varistor and GDT(gas discharge tube) have proven to be good protective devices because of their flexibility and high reliability. ZnO varistors are characterized by their excellent nonlinear properties. GDTs are used for applications in communication or signaling circuits because they have very low capacitance. Therefore, It is very important to understand the V-I characteristic of ZnO varistor and GDT for designing SPD to protect apparatus or personnel from high transient voltage. This paper gives experimental V-I characteristic data of ZnO varistor and GDT for protecting electronic equipments from surge up to maximum discharge current.

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$Nd_2O_3$를 첨가한 ZnO Varistor의 전기적 특성 (The Electrical Properties with variation of ZnO Varistors with added of $Nd_2O_3$)

  • 조현무;이성갑
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.603-606
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    • 2004
  • ZnO varistor ceramics were fabricated with variation of addition of $Nd_2O_3$ amount and the sintering temperature was $l150^{/circ}C$. The average grain sizes were showed decreased from $13.8{\mu}m$ to $4.7{\mu}m$, and varistor voltages were increased from 398 V to 657 V by added amount of $Nd_2O_3$. Nonlinear coefficient a of all were with increasing the amount of $Nd_2O_3$ more than 60, in case of added on 0.1mol% $Nd_2O_3$ was 87. And leakage current were less than $1_{\mu}A$ with applied at 82% of varistor voltage. The clamping voltage ratio of the specimes added 0.1mol% $Nd_2O_3$ was 1.38 at applied 25A [$8/20{\mu}s$]. In the specimen added 0.1mol% $Nd_2O_3$, endurence of surge current and deviation of varistor voltage were 7000A/$cm^2$, $\Delta-2.08%$, respectively.

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$Tb_4O_7$이 첨가된 $Pr_6O_{11}$계 ZnO 바리스터 세라믹스의 미세구조 및 전기적 특성 (Microstructure and Electrical Properties of $Pr_6O_{11}$-Based ZnO Varistor Ceramics Doped With $Tb_4O_7$)

  • 이홍희;김명준;박종아;남춘우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.705-709
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    • 2003
  • The microstructure and electrical properties of the $Pr_6O_{11}$-based ZnO varistor ceramics, which are composed of Zn-Pr-Co-Cr-Tb oxides, were investigated with $Tb_4O_7$ amount. The varistor ceramics exhibited very high densification based on increasing density in the range of $5.73{\sim}5.85g/cm^3$ as $Tb_4O_7$ amount is increased. The calculated nonlinear exponent( ${\alpha}$ ) in varistor ceramics without $Tb_4O_7$ was only 8.9, whereas the ${\alpha}$ value of the varistor ceramics with $Tb_4O_7$ was abruptly increased in the range of 18.6 to 42.0. In particular, the maximum value(42.0) of ${\alpha}$ was obtained by doping of 1.0 mol% $Tb_4O_7$. The measured leakage current($I_{\ell}$) in varistor ceramics without $Tb_4O_7$ was $40.1{\mu}A$, whereas the $I{\ell}$ value of the varistors with $Tb_4O_7$ was very abruptly decreased below $5{\mu}A$. It is estimated that $Tb_4O_7$ additives will is applied usefully in development of varistors possessing high performance.

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Al과 Ga 첨가에 따른 ZnO-$Pr_6O_{11}$ 세라믹스의 소결 및 전기적 특성 (Sintering and Electrical Properties of Al- and Ga-doped ZnO-$Pr_6O_{11}$ ceramics)

  • 이재호;홍연우;신효순;여동훈;김종희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.169-169
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    • 2009
  • ZnO varistor에서 희토류 산화물의 첨가는 비선형계 높게 만든다. 회토류 금속의 첨가로 높아진 비저항을 낮추기 위하여 3족 원소인 Al, Ga을 첨가하여 첨가 함량에 따른 ZnO-$Pr_6O_{11}$ varistor의 비저항을 낮추고자 한다. 따라서 본 연구에서는 Al과 Ga 첨가에 따른 ZnO-$Pr_6O_{11}$을 일반적인 세라믹 공정에 따라 제조하여, Al과 Ga 첨가에 따른 ZnO-$Pr_6O_{11}$ varistor의 특성을 미세구조 조직, 밀도, I-V 특성, 비저항 측정하였다. ZnO의 bulk 및 grain boundary 특성 변화를 각종 유전함수($Z^*$, $Y^*$, $M^*$, $\varepsilon^*$, $tan{\delta}$)를 이용하여 고찰하였다.

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