• 대한금속재료학회지
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• 제46권1호
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• pp.1-5
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• 2008

This study has been investigated the deformation behavior of a hot-extruded Mg-Zn-RE (RE: rare earth elements) alloy containing $Mg_{12}$(RE) particles at the elevated temperatures. The particles are intrinsically produced by breaking the eutectic structure of the alloy during the hot-extrusion process. The grain size of the extruded Mg-Zn-RE alloy developed via dynamic recrystallization is around $10{\mu}m$. Under the heat treatment at 200o C up to 48 hr, no change has been observed on the microstructure and mechanical properties due to the pinning effect of the thermally stable particles. Under the tensile test condition in the initial strain-rate range of $1\times10^{-3}s^{-1}$ and the temperature range up to $200^{\circ}C$, the alloy shows yield strength of 270 MPa and elongation to failure around 9% at room temperature and yield strength of 135 MPa at $200^{\circ}C$. Furthermore, although the alloy contains large amount of the second phase particles around 15%, it shows excellent hot-workability possibly due to the presence of the thermally stable interface between the particles and the matrix.

• Transactions on Electrical and Electronic Materials
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• 제8권3호
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• pp.105-109
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• 2007

The microstructure and electrical properties of Zn-Pr-Co-Cr-Tb oxide-based varistors were investigated for different $Tb_4O_7$ amounts. As the $Tb_4O_7$ amount increased, the average grain size decreased from 7.7 to $4.8{\mu}m$ and the sintered density increased from 5.73 to $5.84g/cm^3$. As the $Tb_4O_7$ amount increased, the varistor voltage increased from 280.9 to 715.8V/mm and the nonlinear coefficient increased from 26.4 to 44.4. It is assumed that these varistors can be applied for high power with compact size.

• 대한전기학회논문지
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• 제41권3호
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• pp.253-260
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• 1992

In this study, the dielectric, structural and electrical properties of Pb(ZnS11/3TNbS12/3T)OS13T-BaTiOS13T-PbTiOS13T system ceramics were investigated with respect to the variation of YS12TOS13T addition amount. As the YS12TOS13T addition amount is increased, the resistivity at 100$^{\circ}C$ and the resonant/antiresonant frequencies and the frequency constant are slowly increased, and the grain growth is restrained until 0.4 wt% YS12TOS13T addition amount but continuously increased with the addition amount more than 0.4 wt% YS12TOS13T. As the YS12TOS13T addition amount is increased, the density, the diffuseness of dielectric constant and the induced polarization are increased until 0.4 wt% YS12TOS13T addition.

• 조명전기설비학회논문지
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• 제24권4호
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• pp.66-72
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• 2010

본 연구에서는 플렉시블 염료감응 태양전지(F-DSC)의 투명전도막으로서의 적용 가능성을 평가하기 위하여 PET 기판위에 AZO 박막을 증착하였다. 또한 ITO와 AZO 박막을 이용하여 동일한 조건하에서 F-DSC를 제작하여 광변환효율을 조사하였다. AZO의 경우 체적저항율 및 증착율은 220[W]의 전력조건하에서 각각 $1.8{\times}10^{-3}[{\Omega}{\cdot}cm]$와 25.5[nm/min] 정도였으며, 광투과율은 약 87[%]였다. AZO 박막의 전기전도 메카니즘의 방전전력 의존성은 XPS 분석결과 방전전력이 증가함에 따라 O1s/Zn2p의 성분비가 증가하여 산소성분에 의한 도너 제공에 크게 영향을 받는 것으로 나타났다. 한편, AZO 투명전도막으로 제작된 F-DSC의 변환효율은 약 2.79[%] 정도였으며, 이는 상용 ITO의 2.94[%]에 거의 필적되는 값으로 AZO의 F-DSC에의 응용 가능성이 충분함을 알 수 있었다.

• 한국세라믹학회지
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• 제40권4호
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• pp.333-339
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• 2003

Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$(BCN) has a 1:2 ordered hexagonal structure. Q-value of BCN increased with increasing sintering temperature however, it significantly decreased when the sintering temperature exceeded 140$0^{\circ}C$ Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$(BZN) has the 1:2 ordered hexagonal structure and the degree of the 1 : 2 ordering decreased with the increase of the sintering temperature. The Q value of the BZN increased with increasing the sintering temperature and BZN sintered at 140$0^{\circ}C$ for 6h has a maximum Q-value. For (1-x) Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$-zBa(Zn$_{1}$ 3/Nb$_{2}$ 3/)O$_3$[(1-x)BCN-xBZN] ceramics the 1:2 ordered hexagonal structure was observed in the specimens with x$\leq$0.3 and the BaNb$_{6}$ O$^{16}$ second phase was found in the specimens with x$\geq$0.6. Grain Growth, which is rotated to the BaNb$_{6}$ O$^{16}$ second phase occurred in the specimens with x$\geq$ 0.5. In this work, the excellent microwave dielectric properties of $\tau$r=0.0 ppm/$^{\circ}C$$\varepsilon$r=34.5 and Q,$\times$f=97000GHz sere obtained for the 0.7BCV-0.3BZN ceramics sintered at 1400$0^{\circ}C$ for 20h.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.281-285
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• 1998

The microstructure and conduction characteristics of ZnO varistor fabricated in the range of 0.0 ~ 4.0mol% $Y_20_3$ were investigated. With increasing$Y_20_3$ content, distribution of spinel phase decreased, whereas Y-rich phase segregated to the nodal point increased, as a result, the average grain size decreased in the range of $20.0 ~ 4.8{\mu}m$. $Y_20_3$ content showing relatively good conduction characteristics was l.Omol%, then nonlinear exponent and leakage current was 55.3, 0.66mA.respectively.

• 한국환경보건학회지
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• 제17권1호
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• pp.39-49
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• 1991

고온에서 황화수소(H$_{2}$S)를 제거하기 위한 흡착제를 개발할 목적으로 ZnO에 $Fe_{2}O_{3}$를 5~50 atomic %까지 첨가시켜 제조한 다공성 흡착제와 황화수소와의 반응(sulfidation)을 thermogravimetric analyzer (Shimadzu DT-30)로 수행하였으며, 고정층세서 zinc ferrite 흡착제의 흡착능을 측정하였다. 반응온도는723$^{\circ}$K~973$^{\circ}$K범위이며, 반응기체는 황화수소(2vol.%)와 질소와 혼합기체로서 total gas flow rate는 200ml/min으로 고정시켰다. Grain Model을 사용하여 실험데이터를 분석한 결과 전화율이 낮을 때 zinc ferrite와 황화수소 반응의 율속단계는 화학반응이었고 황화수소 농도에 대해 1차 반응이었다. 실험한 흡착제 중 10 atomic %의 $Fe_{2}O_{3}$를 첨가하여 제조한 zinc ferrite형 흡착제가 반응속도, 흡착능, 그리고 재생성면에서 우수한 흡착제로 밝혀졌다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.80-83
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• 1999

We have studied properties(crystal structure, density, absorption, contraction, initial permeability, and permeability) of Ni$_{0.175-x}$Cu$_{x}$Zn$_{0.33}$Fe$_{0.495}$ (x=0~0.175) ferrites with various NiO and CuO, because of development of materials for high frequency inductor. The XRD peaks of all of samples were observed only spine이 phase. As a results of the density, absorption rate, and shrinkage rate, the grain growth progressed rapidly in x=0.1 at 95$0^{\circ}C$, x=0.075 at 105$0^{\circ}C$, and x=0.025 at 115$0^{\circ}C$ for 3 hours. Initial permeability increased with increasing CuO concentration until x=0.1, and then decreased. The complex permeability as a function frequency were high values at sintered 105$0^{\circ}C$ fotr3 hours in x=0.075, 0.1., 0.1.1.

• 한국재료학회지
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• 제5권2호
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• pp.151-156
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• 1995

$(Ba, Sr)TiO_{3}$계에 저융점의 Glass물질을 첨가하여 저온소결이 가능하며, 고유전율을 갖는 유전체 재료를 제조하여, 그 특성을 조사하였다. 본 연구에서는 고유전율의 $(Ba, Sr)TiO_{3}$계에 PbO함량이 서로 다른 Glass물질을 첨가하여 조성변화에 따른 저온소결거동 및 유전특성을 조사하였으며, 적층형 세라믹 Capacitor(MLCC)에 응용하기 위하여 다양한 조성으로 제조하였다. $PbO-ZnO-B_{2}O_{2}$계 Glass 성분을 첨가하여 소결온도를 $1350^{\circ}C$에서 $1050^{\circ}C$까지 낮출수 있었으며, 4wt% glass 첨가로 $1150^{\circ}C$ 이하에서 2시간 소결한 저온소결용 재료는 실온에서 8000정도의 높은 비유전율과 0.005의 낮은 유전손실 그리고 광역온도범위에서 유전상수의 안정성을 가진 우수한 특성을 나타내며, 입자크기가 1~3 $\mu$m 정도로 치밀한 미세구조를 가지고 있다. 본 연구의 저온소결용 유전체 재료는 Z5U 규격을 만족시키고 기존의 $BaTiO_{3}$계 재료에 비해 낮은 소결온도를 가지므로 MLCC에 응용시 내부전극으로 Ag-Pd alloy 사용이 가능한 것으로 밝혀졌다.

• 한국재료학회지
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• 제25권1호
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• pp.37-42
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• 2015

The effect of sintering temperature on the microstructure, electrical and dielectric properties of (V, Mn, Co, Dy, Bi)-codoped zinc oxide ceramics was investigated in this study. An increase in the sintering temperature increased the average grain size from 4.7 to $10.4{\mu}m$ and decreased the sintered density from 5.47 to $5.37g/cm^3$. As the sintering temperature increased, the breakdown field decreased greatly from 6027 to 1659 V/cm. The ceramics sintered at $900^{\circ}C$ were characterized by the highest nonlinear coefficient (36.2) and the lowest low leakage current density ($36.4{\mu}A/cm^2$). When the sintering temperature increased, the donor concentration of the semiconducting grain increased from $2.49{\times}10^{17}$ to $6.16{\times}10^{17}/cm^3$, and the density of interface state increased from $1.34{\times}10^{12}$ to $1.99{\times}10^{12}/cm^2$. The dielectric constant increased greatly from 412.3 to 1234.8 with increasing sintering temperature.