• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.993-994
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• 2008

Electrochromic (EC) devices are capable of reversibly changing their optical properties upon charge injection and extraction induced by the external voltage. The characteristics of the EC device, such as low power consumption, high coloration efficiency, and memory effects under open circuit status, make them suitable for use in a variety of applications including smart windows and electronic papers. Coloration due to reduction or oxidation of redox chromophores can be used for EC devices (e-paper), but the switching time is slow (second level). Recently, with increasing demand for the low cost, lightweight flat panel display with paper-like readability (electronic paper), an EC display technology based on dye-modified $TiO_2$ nanoparticle electrode was developed. A well known organic dye molecule, viologen, was adsorbed on the surface of a mesoporous $TiO_2$ nanoparticle film to form the EC electrode. On the other hand, ZnO is a wide bandgap II-VI semiconductor which has been applied in many fields such as UV lasers, field effect transistors and transparent conductors. The bandgap of the bulk ZnO is about 3.37 eV, which is close to that of the $TiO_2$ (3.4 eV). As a traditional transparent conductor, ZnO has excellent electron transport properties, even in ZnO nanoparticle films. In the past few years, one-dimension (1D) nanostructures of ZnO have attracted extensive research interest. In particular, 1D ZnO nanowires renders much better electron transportation capability by providing a direct conduction path for electron transport and greatly reducing the number of grain boundaries. These unique advantages make ZnO nanowires a promising matrix electrode for EC dye molecule loading. ZnO nanowires grow vertically from the substrate and form a dense array (Fig. 1). The ZnO nanowires show regular hexagonal cross section and the average diameter of the ZnO nanowires is about 100 nm. The cross-section image of the ZnO nanowires array (Fig. 1) indicates that the length of the ZnO nanowires is about $6\;{\mu}m$. From one on/off cycle of the ZnO EC cell (Fig. 2). We can see that, the switching time of a ZnO nanowire electrode EC cell with an active area of $1\;{\times}\;1\;cm^2$ is 170 ms and 142 ms for coloration and bleaching, respectively. The coloration and bleaching time is faster compared to the $TiO_2$ mesoporous EC devices with both coloration and bleaching time of about 250 ms for a device with an active area of $2.5\;cm^2$. With further optimization, it is possible that the response time can reach ten(s) of millisecond, i.e. capable of displaying video. Fig. 3 shows a prototype with two different transmittance states. It can be seen that good contrast was obtained. The retention was at least a few hours for these prototypes. Being an oxide, ZnO is oxidation resistant, i.e. it is more durable for field emission cathode. ZnO nanotetropods were also applied to realize the first prototype triode field emission device, making use of scattered surface-conduction electrons for field emission (Fig. 4). The device has a high efficiency (field emitted electron to total electron ratio) of about 60%. With this high efficiency, we were able to fabricate some prototype displays (Fig. 5 showing some alphanumerical symbols). ZnO tetrapods have four legs, which guarantees that there is one leg always pointing upward, even using screen printing method to fabricate the cathode.

• 한국세라믹학회지
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• 제40권1호
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• pp.31-36
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• 2003

본 연구에서는 칩 인덕터용 코어 소재로 사용되는 NiCuZn-ferrite를 공침법을 이용하여 나노크기의 초미세 분말로 합성하고, 합성된 NiCuZn-ferrite의 하소 온도에 따른 저온소결 특성 및 전자기적 특성에 관하여 고찰하였다. 조성은 (N $i_{0.4-X}$C $u_{x}$Z $n_{0.6}$)$_{1+w}$(F $e_2$ $O_4$)$_{1-w}$에서 x 값을 0.2, w 값은 0.03으로 고정하였고, 하소는 30$0^{\circ}C$에서 7$50^{\circ}C$의 온도범위에서 진행하였다. 하소 후 90$0^{\circ}C$에서 소결한 시편의 특성을 측정한 결과, 공침법으로 합성한 NiCuZn-ferrite는 90$0^{\circ}C$의 저온에서 소결밀도 4.90g/㎤, 초기투자율 164, Q-factor 72임을 확인하였다. 또한, NiCuZn-ferrite의 미세구조는 하소온도가 증가함에 따라 입자가 커지고 불균일한 상태가 되며, 초기투자율 등의 ferrites의 전자기적 특성이 저하되었다.되었다.

• 한국세라믹학회지
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• 제34권3호
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• pp.289-295
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• 1997

저손실 Mn-Zn 페라이트의 제조공정과 첨가제가 코아의 미세구조와 전기적 특성에 미치는 영향을 조사하였다. C\ulcorner와 SiO2를 원료분체혼합시에 첨가하는 경우보다 하소분체의 재분쇄시에 첨가할 때가 작고 균일한 소결체를 얻을 수 있었다. 산소분압(Po2)이 높아짐에 따라 미세구조가 불균일해졌고 DF(disaccomodation fac-색)가 증가하였다. 또한 하소온도가 높고 분쇄시간이 짧은 소결체의 경우 치밀한 속도가 감소하여, 130$0^{\circ}C$까지 정상입성장거동을 보였고, 따라서 높은 소결온도에서도 비교적 저손실 Mn-Zn 페라이트를 얻을 수 있었다. 장시간 분쇄하거나 하소온도가 낮은 시편의 경우는 치밀화속도의 증가에 기인하여 120$0^{\circ}C$이하의 저온 소결시 미립자의 저손실 Mn-Zn 페라이트를 얻을 수 있었으나 소결온도 125$0^{\circ}C$이상에서는 비정상 입성장을 유발시켰다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.603-606
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• 2004

ZnO varistor ceramics were fabricated with variation of addition of $Nd_2O_3$ amount and the sintering temperature was $l150^{/circ}C$. The average grain sizes were showed decreased from $13.8{\mu}m$ to $4.7{\mu}m$, and varistor voltages were increased from 398 V to 657 V by added amount of $Nd_2O_3$. Nonlinear coefficient a of all were with increasing the amount of $Nd_2O_3$ more than 60, in case of added on 0.1mol% $Nd_2O_3$ was 87. And leakage current were less than $1_{\mu}A$ with applied at 82% of varistor voltage. The clamping voltage ratio of the specimes added 0.1mol% $Nd_2O_3$ was 1.38 at applied 25A [$8/20{\mu}s$]. In the specimen added 0.1mol% $Nd_2O_3$, endurence of surge current and deviation of varistor voltage were 7000A/$cm^2$, $\Delta-2.08%$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.171-174
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• 2004

The surge characteristics of $Pr_6O_{11}$-based ZnO varistors consisting of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Er_2O_3$ ceramics were investigated with sintering temperature in the range of $1335{\sim}1345^{\circ}C$. As the sintering temperature is raised, the average grain size was marked1y increased in the range of $9.67{\sim}14.07\;{\mu}m$ and the ceramic density was increased in the range of $5.46{\sim}5.59\;g/cm^3$. While, the nonlinear exponent was decreased in the range of 64.9~44.1 and the clamping voltage ratio was improved in the range of 1.99~2.08. The best varistor properties was obtained from the varistors sintered at $1335^{\circ}C$, exhibiting a maximum (64.9) in the nonlinear exponent and a minimum (1.99) in the clamping voltage ratio.

• 대한금속재료학회지
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• 제49권7호
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• pp.583-588
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• 2011

$Cd_xZn_{1-x}O$ thin films were grown on quartz substrates by using the sol-gel spin-coating method. The mole fraction, x, of the $Cd_xZn_{1-x}O$ thin films was controlled from 0 to 1 by changes in the content ratio of the cadmium acetate dehydrate [$Cd{(CH_3COO)}_2{\cdot}2H_2O$] and zinc acetate dehydrate [$Zn{(CH_3COO)}_2{\cdot}2H_2O$]. The effects of the mole fraction on the morphological, structural, and optical properties of the $Cd_xZn_{1-x}O$ thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-visible spectroscopy. The $Cd_xZn_{1-x}O$ thin films exhibited the polygonal surface morphology and their grain size was increased ranging from 42.1 to 63.9 nm with the increase in the mole fraction. It was observed that the absorption bandgap of the $Cd_xZn_{1-x}O$ thin films decreased from 3.25 to 2.16 eV as the mole fraction increased and the Urbach energy ($E_U$) values changed inversely to the optical bandgap of the $Cd_xZn_{1-x}O$ thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.390.1-390.1
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• 2016

The present work explains the interfacial energetics of all oxide transparent photodiodes. The optical, structural and morphological of copper oxides were systematically analyse by UV-Visible spectrometer, X-Ray diffraction, Raman spectroscopy, Scanning electron microscopy (SEM) and Atomic force microscopy measurements (AFM). The UV-Visible result exhibits optical bandgap of Cu2O and CuO as 2.2 and 2.05 eV respectively. SEM and AFM result shows a uniform grain size distribution in Cu2O and CuO thin films with the average grain size of 45 and 40 nm respectively. The results of Current-Voltage and Kelvin probe force microscope characteristics describe the electrical responses of the Cu2O/ZnO and CuO/ZnO heterojunctions photodiodes. The obtained electrical response depicts the approximately same knee voltages with a measurable difference in the absolute value of net terminal current. More over the present study realizes the all oxide transparent photodiode with zero bias photocurrent. The presented results lay the template for fabricating and analysing the self-bias all oxide transparent photodetector.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.926-931
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• 2000

The microwave dielectric properties and the microstructures as a mole fraction of (1-x)ZnNb$_2$O$_{6}$-xPb$_{5}$Nb$_4$O$_{15}$ ceramics with CuV$_2$O$_{6}$, Sb$_2$O$_3$ and glass(ZNPN ceramics) was investigated. 0.98ZN-0.02PN ceramics containing 1.5 wt% CuV$_2$O$_{6}$ 1.0 wt% Sb$_2$O$_3$ and 1.0 wt% glass had a dielectric constant($\varepsilon$$_{r}$) of 23, Qxf$_{o}$ value of 15000 and TCF(Temperature Coefficient of resonance Frequency) of -25 ppm/$^{\circ}C$ and it is possible to be co-fired with Ag electrode at 90$0^{\circ}C$. As sintered temperature increases over 90$0^{\circ}C$ the grain size of ZNPN ceramics was increasing for growth and it has poor co-fired properties with Ag electrode.e.ctrode.e.e.

• 한국자기학회지
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• 제16권5호
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• pp.255-260
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• 2006

기본조성 $(Ni_{0.35}Cu_{0.2}Zn_{0.45})_{1.02}(Fe_2O_3)_{0.98}$과 NiO 비율을 증가시키고 ZnO을 감소시킨 또 다른 기본조성 $(Ni_{0.4}Cu_{0.2}Zn_{0.4})_{1.02}(Fe_2O_3)_{0.98}$에 grain boundary의 높은 저항층을 형성하고 flux로서 사용하기 위해서 0.1 mol% $CaCO_3$와 입자의 성장을 촉진시켜 낮은 손실, 높은 투자율을 얻기 위한 목적으로 $V_2O_5$를 0.03mo1% 첨가하였다. 이들 원료들을 혼합한 후 $600^{\circ}C$에서 2시간 동안 가소시킨 분말을 toroid 시편으로 만들어 소결온도 $1,050^{\circ}C,\;1,070^{\circ}C,\;1,100^{\circ}C$에서 각각 2시간 동안 공기 중에서 소결하였다. 각 시편들에 대한 밀도는 $4.90{\sim}5.10g/cm^3$으로 나타났고, 각 시편들의 고유저항은 $10^8{\sim}10^{12}{\Omega}-cm$으로 측정되었으며, 결정립의 크기는 대략 $3.0{\sim}8.0{\mu}m$이었다. 시편들의 자기유도 특성 값이 대부분 우수하게 나타났으며, 그 중에서도 기본조성 $(Ni_{0.4}Cu_{0.2}Zn_{0.4})_{1.02}(Fe_2O_3)_{0.98}$에 $CaCO_3$와 $V_2O_5$를 첨가하고 $1,070^{\circ}C$에서 소결한 시편의 특성 값이 잔류자기유도 1,660 G, 최대자기유도 4,000 G로 약간 더 우수하게 측정되었으며, 각각 시편들의 보자력은 $0.15{\sim}0.25\;Oe$로 전형적인 연자성 재료의 범위로 나타났다. 초투자율, 손실계수, 및 큐리온도는 각각 $2,948{\sim}2,997,\;171{\sim}208,\;191{\sim}202^{\circ}C$로 나타나 Ni-Zn ferrite에서 측정되는 값들과 대동소이했다. 물리적인 특성값(고유저항, 자기유도, 초투자율, 손실계수, 큐리온도 등)으로 미루어보아 각종 microwave 통신기기 core 및 고 투자율 deflection yoke core 등으로 사용이 가능하다.

• 한국전기전자재료학회논문지
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• 제30권12호
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• pp.794-799
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• 2017

Ga-doped ZnO (GZO) films were deposited by an RF magnetron sputtering method on glass substrates using ZnO as a target containing 5 wt% $Ga_2O_3$ powder (for Ga doping). The structural, electrical, and optical properties of the GZO thin films were investigated as a function of the substrate temperatures. The deposition rate decreased with increasing substrate temperatures from room temperature to $350^{\circ}C$. The films showed typical orientation with the c-axis vertical to the glass substrates and the grain size increased up to a substrate temperature of $300^{\circ}C$ but decreased beyond $350^{\circ}C$. The resistivity of GZO thin films deposited at the substrate temperature of $300^{\circ}C$ was $7{\times}10^{-4}{\Omega}cm$, and it showed a dependence on the carrier concentration and mobility. The optical transmittances of the films with thickness of $3,000{\AA}$ were above 80% in the visible region, regardless of the substrate temperatures.