• Journal of the Korean Magnetics Society
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• v.13 no.1
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• pp.15-20
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• 2003

Diffusion speed of Cu metal fine particle is fast better than CuO, so it will promote grain growth in sintering. In this paper, the influence on substituting Cu fine particle for CuO of NiCuZn ferrite with basic composition (N $i_{0.204}$C $u_{0.204}$Z $n_{0.612}$ $O_{1.02}$)F $e_{1.98}$ $O_{2.98}$ has been investigated with varying Cu/CuO ratio. The perfect spinel structure of sintered specimen at 90$0^{\circ}C$ was confirmed by the analysis of XRD patterns. The best condition was obtained when the ratio of Cu/CuO was 60%, and the permeability was 1100 and Ms was 87 emu/g in this condition. Cu has influenced on grain growth in sintering, substituting Cu fine particle for CuO could lower sintering temperature over the 3$0^{\circ}C$. After sintering, substituting Cu performed as good as CuO.s CuO.s CuO.

• Journal of the Korean Ceramic Society
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• v.29 no.4
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• pp.253-258
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• 1992

ZnO varistors were prepared by the organochemical method which used citric acid and ethylene glycol as gelling agents. The microstructure of the sintered specimens exhibited small grains, uniform grain size distribution, and few intragranular pores. Thermal decomposition of the organic resin formed during the powder preparation process was completed around 450$^{\circ}C$. No significant changes were observed in microstructure and current voltage characteristic with respect to calcination temperatures. A major advantage of the organochemical method used in this experiment is a possible uniform mixing of trace amounts of dopants. Therefore, this powder preparation method seems promising in investigating the effect of Li or In ion, which is added in ppm level to ZnO varistors, on the pulse respose characteristic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.76-79
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• 2000

The $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics were prepared by conventional mixed oxide method. The structural properties of the BZT ceramics with the sintering temperature were investigated by XRD, SEM. The BZT ceramics have a complex-perovskite structure. The BZT ceramics sintered at $1550^{\circ}C$ had a superstructure plane of BZT(100). Increasing the sintering temperature, the bulk density and ordering were increased. The bulk density of the BZT ceramics sintered at $1550^{\circ}C$ was $7.50[g/cm^3]$. Increasing the sintering temperature, the average grain size were increased and pore were decreased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.2
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• pp.72-75
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• 2008

Zinc oxide (ZnO) thin films were prepared by a sol-gel method. The structural and electrical properties were investigated by varying drying and annealing temperatures. The thin films were coated (250 nm) by spin-coating method on glass substrates. The optimum drying temperature of ZnO thin films was 300$^{\circ}C$ where the resistivity was the lowest and the preferred c-axis orientation was the highest. The annealing was carried out in air and inert atmospheric conditions. The degree of the preferred c-axis orientation was estimated. The highest preferred c-axis orientation was recorded at 600$^{\circ}C$. The preferred c-axis orientation and grain growth resulted in the mobility enhancement of the ZnO thin films, and the lowest resistivity was 0.62${\Omega}{\cdot}cm$ at 600$^{\circ}C$.

• Journal of Information Display
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• v.10 no.1
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• pp.24-27
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• 2009

A simple nonalkoxide sol-gel route for depositing an Al-doped ZnO thin film on a glass substrate was derived in this study. The initial Al dopant concentration in the sol-gel preparation varied and ranged from 0 to 5%. The sol-gel-derived thin films showed c-plane preferred crystallization of their hexagonal phase, with nanosized grain structures. First and second post-heat-treatments were carried out to improve the film’s electrical resistivity. The carrier density and the Hall mobility were measured and discussed to explain the electrical resistivity. The optical transmittance within the visible range showed compatible properties, which indicates the possible use of A1-doped ZnO as a transparent electrode in flat panel displays.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.854-856
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• 1999

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin film's c-axis orientation and grain size were analyzed by XRD(x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• Journal of the Korean Ceramic Society
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• v.41 no.8
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• pp.605-609
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• 2004

The microstructure, electrical and dielectric characteristics of ZnO varistors were investigated at various metal oxide (NiO, MgO, and Cr$_2$O$_3$) additives. The average grain size was increased with addition of NiO while that was decreased with addition of Cr$_2$O$_3$-Thereby, the varistor voltage was higher in Cr$_2$O$_3$-added composition. Among varistors, the varistor added with Cr$_2$O$_3$ exhibited the highest nonlinearity, with 40.5 in the nonlinear exponent and 2.7 ${\mu}$A in the leakage current and its dielectric dissipation factor was relatively low value of 0.0589.

• Advances in nano research
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• v.5 no.3
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• pp.193-201
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• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

• Journal of Powder Materials
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• v.9 no.1
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• pp.25-31
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• 2002

The efects of mechanical aloying conditions and the type of reducing agent on the solid state reductionof haematite $Fe_2O_3$ have been investigated at room temperature. Aluminium titanium zinc and copper were used as reducing agent. Nanocomposites of metal-oxide in which oxide particles with nano size were dispersed in Fe matrix were obtained by mechanical alloying of $Fe_2O_3$ with aluminium and titanium respectively However the reduction of $Fe_2O_3$ by coppe was not occurred Composite materials of iron with $Al_2O_3$ and $TiO_2$ were obtained from the system of $Fe_2O_3-Al$ and $Fe_2O_3-Ti$ after ball milling for 20 hrs and 30 hrs respectively. And the system of $Fe_2O_3-Zn$ resulted in the formationof FeO with ZnO after ball milling of 120 hrs. The final grain sizes of iron estimated by X-ray diffraction line-width measurement were in the ranges of 24~33 nm.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.497-504
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• 1993

Effects of $Ta_2O_5,ZrO_2$ and $SiO_2$ addition on magnetic properties of 0.02wt%$Bi_2O_3$ and 0 . 0 5 wt%$CaCO_3$ doped Mn-Zn ferrites(58.5mol% $Fe_2O_3$, 25.5 mol% ZnO) were investigated. E:lectrlcal resistivity and magnetic properties such as the initial permeability($\mu_i$), loss factor(tan$\delta$), coercive force Hc(m0c) were measured. With lncreasing $Ta_2O_5$ and $ZrO_2$ addition, the following effects were observed: I ) Decreasing of the average grain size; 2) lncreasing of the electrical resistivity and initial permeability; 3) Ilecreasmg of loss factor values. (very low loss esprcially at high frequency region) ; 4 ) Fine and uniform microsrructures were obtamed at O.lwt% nddecl samples. In case of $SiO_2$ addition, anomalous grain growth and degradation of magnetic properties were observed. The obtained maximum initial permeability value was 6260 at IOkHz. $25^{\circ}C$ from 0.02wt%$Bi_2O_3$. 0.05wt%$CaCO_3$, 0.lwt%$Ta_2O_5$ added sample, the corresponded relative loss factor (tan$\delta /\mu_i$)for the sample was $4.2 \times 10^{-6}$.