• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.187-191
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• 2007

The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of $SiO_2,\;SiN_x$ and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with $SiN_x$ were $20.2cm^2V^{-1}s^{-1}\;and\;5{\times}10^6$ respectively which is higher than those previously reported. The device adoptable values of the mobility of $1.37cm^2V^{-1}s^{-1}$ and the on/off ratio of $6{\times}10^3$ were evaluated from the device with organic PVP dielectric.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.427-430
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• 2001

The degradation characteristics versus MgO Additive for the ZnO ceramic devices fabricated by the standard ceramic techniques is investigated in this study. It were made these devices be basic Matsuoka's composition. Especially, MgO were added to analyze the degradation characteristics and sintered in air at 1300$^{\circ}C$. The conditions of DC degradation test were 115${\pm}$2$^{\circ}C$ for 12h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. The elemental analysis in the microstructures was used by EDS, E-J analysis was used to determine ${\alpha}$ . Frequency analysis was accomplished to understand the relationship between R$\sub$g/ and $R_{b}$ with the electric stress at the equivalent circuit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.398-405
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• 2002

The degradation characteristics of MgO additive for the ZnO ceramic devices fabricated by the standard ceramic techniques are investigated in this study. These devices were made from basic Matsuoka's composition. Especially, MgO was added to analyze the degradation characteristics and devices were sintered in air at $1200^{\circ}C$. The conditions of DC degradation test were $115\pm2^{\circ}C$ for 12h. Using XRD and SEM, the phase and microstructure of samples were analyzed, respectively. The elemental analysis in the microstructures was performed by EDS, E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand the relationship between $R_G$ and $R_B$ with the electric stress at the equivalent circuit.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.527-531
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• 2006

In order to study the influence of post-annealing treatment on the frequency characteristics of the Li doped ZnO(Li:ZnO) FBAR(Film Bulk Acoustic Resonator) device, we investigated the material and electrical properties of Li:ZnO films in the annealing temperature range from 300 to $500^{\circ}C$. In our samples, as annealing temperature was increased, Li:ZnO films showed the improvement of high c-axis orientation and resistance value with relieved stress and low surface roughness. In addition to, the return loss in the frequency property of fabricated FBAR was improved by annealing treatment from 24.9 to 29.8dB. From experimental results, the optimum post-annealing temperature for FBAR is $500^{\circ}C$ and it can obtain excellent Li:ZnO FBAR performance with stronger c-axis orientation, smoother surface, relieved stress, and lower loss factor.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.4
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• pp.79-83
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• 2012

LTCC (Low temperature co-fired ceramic) package have been paid much attention due its good reliability, miniaturization, and application of silver paste with complex wiring and printing. Therefore, LTCC package has been expected to replace vulnerable plastic package in the field of high power LED device. Currently, LTCC ceramic package is mainly made up of aluminum oxide powder. In this study, zinc oxide powder is added or replaced for the fabrication of LTCC ceramic body. By adding small amount of ZnO, thermal conductivity of the LTCC ceramic body could be remarkably increased by 25% leading to the extension of LED life time. The LTCC package structure with composition including ZnO has an increased thermal flux by 56% as a result of ANSYS simulation. Actually, the fabricated LED package with the addition of ZnO exhibits a decreased thermal resistivity by 14.9%.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.226-232
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• 2002

We searched thermal stability of ${\alpha}-Fe_2O_3$ using red color filter for display. In the PDP(Plasma Display Panel), the color filter layer is lied normally between front glass and transparent dielectric materials, so it might be needed to study the reaction of ${\alpha}-Fe_2O_3$ and transparent dielectric materials. The transparent dielectric materials containing ZnO has good transparency. Red colorlayer of ${\alpha}-Fe_2O_3$ contacted with dielectric material layer containing ZnO is changed to colorlessness over 500$^{\circ}$C because ZnO defuse ${\alpha}-Fe_2O_3$, the dielectric materials without ZnO, however, maintain red color at the same condition. We suggest that a layer contacting with ${\alpha}-Fe_2O_3$ red color layer has to lie with transparent dielectric materials without ZnO, then the materials containing ZnO is coated over to get color of ${\alpha}-Fe_2O_3$ for red color filter

• Journal of the Korean Ceramic Society
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• v.13 no.4
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• pp.5-8
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• 1976

Both oriented and non-oriented ferroxplana $Co_{1-x}Zn_xZ(Ba_3Co_{2(1-x)}Zn_{2x} Fe_{24}O_{41})$ with x=0.00, 0.45 were prepared by conventional ceramic method. The magnetostrictions of thus prepared specimens were measured by use of the three terminal capacitor device at room temperature. The magnitude of measured values was approximately five times greater than that of ZnY ferroxplana. The easy-magnetization plane at room temperature of both CoZ and Co0.55 $Zn_{0.45}$Z was their basal plane. The magentostrictions in the basal plane and the other planes showed saturated values at magnetic field intensity of about 2Koe and 4Koe, respectively. The magnetostriction constants $K_1, \; K_2, \;K_3\; and\; K_4$ for CoZ were -2.4, -10.5, -5.9 and -45.2$\times10^{-6}$ , while those for $Co_{0.55}Zn_{0.45}Z$ were +0.1, -1.2, -6.3 and -39.0$\times$10^{-6}, , respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.258-263
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• 2021

ZnO varistor is a semiconductor device which can serve to protect the circuit from surge voltage because its non-linear I-V characteristics by controlling the microstructure of grain and grain boundaries. In order to obtain desired electrical properties, it is important to control microstructure evolution during the sintering process. In this research, we defined a dataset composed of process conditions of sintering and relative permittivity of sintered body, and collected experimental dataset with DOE. Meta-models can predict permittivity were developed by learning the collected experimental dataset on various machine learning algorithms. By utilizing the meta-model, we can derive optimized sintering conditions that could show the maximum permittivity from the numerical-based HMA (Hybrid Metaheuristic Algorithm) optimization algorithm. It is possible to search the optimal process conditions with minimum number of experiments if meta-model-based optimization is applied to ceramic processing.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.211.1-211
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• 2002

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.214-220
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• 1998

ZnO varistors are characterized by the features of excellent nonlinearity and surge withstand capability. In this paper, in order to investigate the use of ZnO varistor as surge absorption device in low voltage, metal oxide material($TiO_2$) was selected as control material of grain growth. Samples of ZnO varistors were fabricated with varying the contents, and then the microstructures and V-I characteristics were measured. It was observed by SEM that the mean grain size increased with the increase of the additive. From the measurement of V-I characteristics, it was observed that according to the increase of the quantity of $TiO_2$ as additive, the operating voltage was lowered.