• 자원환경지질
• /
• 제39권3호
• /
• pp.329-342
• /
• 2006

이 연구에서는 곤양지역 하상퇴적물에 대한 지구화학적 특성을 규명하고 환경오염과 지질재해에 대해서 이해하고자 한다. 이를 위해 물이 흐르고 있는 1차 수계를 대상으로 하상퇴적물시료 178개를 채취하였고, 실험실에서 자연건조 시켰다. 시료는 알루미나 몰타르를 이용하여 200메쉬 이하로 분쇄하였고, XRD, XRF, ICP-AES, NAA분석을 실시하였다. 연구지역 하상퇴적물 지질집단별 지구화학적 특성 비교를 위해, 석영반암 지역, 퇴적암류 지역, 아노르도사이트 지역과 편마암류 지역으로 분류하였다. 곤양지역 하상퇴적물의 주성분원소 함량은 $SiO_2\;41.86{\sim}76.74\;wt.%,\;Al_{2}O_{3}\;9.92{\sim}30.00\;wt.%,\;Fe_{2}O_{3}\;2.74{\sim}12.68\;wt.%,\;CaO\;0.22{\sim}3.31\;wt.%\;,MgO\;0.34{\sim}3.97\;wt.%,\;K_{2}O\;0.75{\sim}0.93\;wt.%,\;Na_{2}O\;0.25{\sim}1.92\;wt.%,\;TiO_{2}\;0.40{\sim}3.00\;wt.%,\;MnO\;0.03{\sim}0.21\;wt.%,\;P_{2}O_{5}\;0.05{\sim}0.38\;wt.%$이다. 하상퇴적물의 미량성분원소 및 희토류원소 함량은 $Cu\;7{\sim}102\;ppm,\;Pb\;15{\sim}47\;ppm,\;Sr\;48{\sim}513\;ppm,\;V\;29{\sim}129\;ppm,\;Zr\;31{\sim}217\;ppm,\;Li\;14{\sim}94\;ppm,\;Co\;5.6{\sim}32.1\;ppm,\;Cr\;23{\sim}259\;ppm,\;Cs\;1.7{\sim}8.7\;ppm,\;Hf\;2.1{\sim}109.0\;ppm,\;Rb\;34{\sim}247\;ppm,\;Sc\;4.5{\sim}21.9\;ppm,\;Zn\;24{\sim}609\;ppm,\;Sb;0.8{\sim}2.6\;ppm,\;Th\;3{\sim}213\;ppm,\;Ce\;22{\sim}1000\;ppm,\;Eu;0.7{\sim}5.3\;ppm,\;Yb\;0.6{\sim}6.4\;ppm$의 범위를 보인다.

• 한국재료학회지
• /
• 제13권4호
• /
• pp.259-265
• /
• 2003

For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2009년도 제40회 하계학술대회
• /
• pp.1258_1259
• /
• 2009

염료감응형 태양전지 (dye-sensitized solar cell; DSC)는 경제성 한계에 달한 Si 태양전지를 대체할 수 있는 유력한 후보로서, 지금까지 많은 연구개발로 큰 효율향상을 기록했다. 다양한 연구 분야 중에서도, 투명전도성 막과 전해질 층간의 접촉으로 발생하는 전자의 재결합을 막기 위해 삽입하는 compact layer는 ZnO dip-coating, $TiCl_4$ dip-coating, Ti sputtering 등 다양한 제조방법이 제시되었다. 본 연구에서는 $TiCl_4$ 용액을 이용해 spin-coating 방법으로 $TiO_2$ compact layer를 제조하는 시도를 했다. 기존 dip-coating 방법과의 비교를 통해서 본 연구의 spin-coating 방법에 의한 효과를 확인한 결과, standard DSC 대비 33.4%, dip-coating 방법으로 compact layer를 삽입한 DSC 대비 6%의 효율 향상을 기록했다.

• 전기학회논문지
• /
• 제58권11호
• /
• pp.2214-2218
• /
• 2009

Dye-sensitized solar cell (DSC) has been considered as a possible alternative to current silicon based p-n junction photovoltaic devices due to its advantages of high efficiency, simple fabrication process and low production cost. Numerous researches for high efficient DSC in the various fields are under way even now. Among them, the compact layer, which prevents the back electron transfer between transparent conductive oxides and the redox electrolyte, is fabricated by various methods such as a ZnO dip-coating, $TiCl_4$ dip-coating, and Ti sputtering. In this study, we tried to fabricate the $TiO_2$ compact layer by the spin-coating method using aqueous $TiCl_4$ solution. The effect of the spin-coating method was checked as compared with conventional dip-coating method. As a result, DSC with a spin-coated compact layer had 33.4% and 6% better efficiency than standard DSC and DSC with a dip-coated compact layer.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
• /
• pp.46-50
• /
• 1996

In this paper, xPb(Zn$\_$1/3/Nb$\_$2/3/)O$_3$-yPbTiO$_3$-zPbZrO$_3$-zPbZrO$_3$ (0.5wt%)MnO$_2$ ceramics were fabricated by the mixed oxide method sintered at 1250$^{\circ}C$ for 2[hrs] and then the dielectric and pyroelectric properties were investigated. In 0.10PZN-0.45PT-0.47PZ sample, dielectric constant was 829 and in the case of 01.5PZN-0.45PT-0.40PZ sample, pyroelectric current and pyroelectric coefficient were 0.95 x 10$\^$-7/ [A] and 7.6 x 10$\^$-1/ [C/$\textrm{cm}^2$$.$$^{\circ}C$]. Figure of merits of pyroelectric current and voltage and detectivity, in same sample, has shown good properties, that were 2.4 x 10$\^$-8/[C$.$cm/J], 5.5 x 10$\^$-11/[C$.$cm/J], 1.6 x 10$\^$-8/ [C$.$cm/J].

• 한국지구과학회지
• /
• 제22권3호
• /
• pp.208-222
• /
• 2001

이 연구는 전남 광양광산과 그 주변의 하천에 형성되어 있는 부유성 비정질 퇴적물의 지구화학적 특성을 밝히기 위해 수행되었다. 부유성 비정질 퇴적물의 주요성분은 Fe$_2$O$_3$이며, Fe$_2$O$_3$의 함량은 17.9${\cdot}$72.3wt.% 범위로 나타난다. Fe함량이 증가하면 Si, Al, Mg, Na, K, Mn 및 Ti 함량이 감소하며 Te, Au, Ga, Bi, Cd, Hg, Sb, 및 Se등의 함량은 증가한다. 하상 침전물인 비정질 퇴적물에는 As(최대 54.9ppm), Bi(최대 3.77ppm), Cd(최대 3.65ppm), Hg(최대64ppm), Sb(최대 10.1ppm), Cu (최대 37.1ppm), Mo(최대 8.86ppm), Pb(최대 9.45ppm) 및 Zn(최대 29.7ppm) 등의 중금속원소가 농집되어 있다. 황갈색 침전물에는 Au(최대 4.40ppm)와 Ag(최대 0.24ppm) 함량이 매우 높게 나타나며, Au함량은 하천의 상류지역에 높은 함량을 보이다가 하류지역으로 갈수록 그 함량이 감소한다. 반면에 Ag 함량은 상류지역의 하천에 낮은 함량을 보이다가 하류지역으로 갈수록 그 함량이 증가하여 나타난다. XRD분석에서 하상의 황갈색 침전물은 X-선회절선이 뚜렷하지 않은 비정질이거나 결정도가 미약한 철수산화물로 밝혀졌으며, 석영, 침철석, 고령토, 일라이트 등이 관찰된다. IR분석에서 비정질 하상 퇴적물은 OH기, H$_2$O, SO$_4$ 및 Fe-O 기에 의한 흡수밴드가 관찰된다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.373-373
• /
• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• 반도체디스플레이기술학회지
• /
• 제21권3호
• /
• pp.57-62
• /
• 2022

The plasma resistance of multi-component glasses containing La, Gd, Ti, Zn, Y, Zr, Nb, and Ta was analyzed in this study. The plasma etching was performed via inductively coupled plasma-reactive ion etching (ICP-RIE) using CF₄/O₂/Ar mixed gas. After the reaction, the glass with a low fluoride sublimation temperature and high content of P, Si, and Ti elements showed a high etching rate. On the other hand, the glass containing a high fluoride sublimation temperature component such as Ca, La, Gd, Y, and Zr exhibited high plasma resistance because the etch rate was lower than that of sapphire. Glass with low plasma resistance increased surface roughness after etching or nanoholes were formed on the surface, but glass with high plasma resistance showed little change in surface microstructure. Thus, the results of this study demonstrate the potential for the development of plasma-resistant glasses (PRGs) with other compositions besides alumino-silicate glasses, which are conventionally referred to as plasma-resistant glasses.

• 한국전기전자재료학회논문지
• /
• 제30권11호
• /
• pp.688-692
• /
• 2017

$Pb(Zr,\;Ti)O_3$ (PZT) is a piezoelectric material applied in a typical actuator and has been actively studied. However, in order to overcome the limitations of PZT, piezoelectric ceramics comprising mixed solid solutions of PZT with various relaxer electric materials have been studied. The $Pb(Zn_{1/3}Nb_{2/3})-Pb(Ni_{1/3}Nb_{2/3})-Pb(Zr,\;Ti)O_3$ (PZN-PNN-PZT) piezoelectric ceramic, known to have high piezoelectric constant and electromechanical coupling coefficient, was studied herein. The piezoelectric characteristics with various Zr contents (Zr/Ti ratios), PZN molar ratios, and sintering temperatures were compared. The piezoelectric properties of $d_{33}=580pC/N$ and $k_P=0.68$ were obtained with the $0.1PZN-0.2PNN-0.7PbZr_{0.46}Ti_{0.54}O_3$ composition sintered at $1,290^{\circ}C$.

• Biomolecules & Therapeutics
• /
• 제5권2호
• /
• pp.107-109
• /
• 1997

For metabolic study of pinusolide, a naturally occurring platelet activating factor antagonist, a synthetic method for preparation of radiolabeled pinusolide was studied. Pinusolide was first oxidized with $OsO_4/NaIO_4 $to 17-nor-8-oxo compound (2), which was subsequently converted to pinusolide by treatment with the Lombardo reagent $(Zn/CH_2Br_2/TiCI_4)$. The Wittily reaction was unsuccessful in the latter carbonyl methylenation of 2.