• 한국재료학회지
• /
• 제32권2호
• /
• pp.94-97
• /
• 2022

We fabricated 3 types of ETL, mp TiO₂, ZnO, and ZnO coated on mp TiO₂(ZMT) to compare the photoelectric conversion efficiency (PCE) and fill factor (FF) of Perovskite solar cells. The structure of the cells was FTO/ETL/Perovskite (CH₃NH₃PbI₃)/spiro-MeOTAD/Ag. SEM morphology assessment of the ETLs showed that mp TiO₂ was porous, ZnO was flat, and the ZMT porous surface was filled with a thin layer. Via XRD measurements, the crystal structures of mp TiO₂ and ZnO ETL were found to be anatase and wurtzite, respectively. The XPS patterns showing energy bonding of mp TiO₂, ZnO, and ZMT O 1s confirmed these materials to be metal oxides such as ETL. The electrical characteristics of the Perovskite solar cells were measured using a solar simulator. Perovskite solar cells with ZMT ETL showed showed PCE of 10.29 % than that of conventional mp TiO₂ ETL devices. This was considered a result of preventing Perovskite from seeping into the ETL and preventing recombination of electrons and holes.

• 분석과학
• /
• 제16권5호
• /
• pp.368-374
• /
• 2003

반도체 공정에서는 많은 종류의 가스를 사용하는 데 그중 할로겐 가스는 독성과 환경오염 문제를 야기 시키고 있다. 본 실험은 할로겐 가스를 기존의 제거 방식이 아닌 수지를 이용한 제거 방법 및 측정을 하는 연구를 하였다. 우선 실험에 사용한 할로겐 가스로는 $BCl_3$와 $CF_4$ 가스를 제거하는 실험을 하였다. 실험 장치는 실험조건을 고려하여 직접 제작을 하였다. 그리고 수지를 이용한 흡착 제거를 하기 위해 제올라이트, $Ag^+$ 이온으로 치환된 제올라이트, $AgMnO_3$, ZnO등 여러 가지 수지를 이용하여 실험하였다. 가스의 분석을 위해서 실제 사용되어지는 적외선 분광기 (FT-IR)를 이용하여 정성 및 정량분석을 하여 각각의 수지에 대한 할로겐 가스의 제거량을 계산하여 수지의 제거 능력을 확인하였다. 제올라이트, Ag 제올라이트, $AgMnO_3$, ZnO등의 수지중에서 ZnO가 가장 좋은 제거 효율을 보였으며 $BCl_3$ 가스의 경우 수지 1g에 대해 0.094 g을 제거하는 결과를 보였다. 그러나 $CF_4$ 가스는 일반적인 고체 수지는 제거를 하지 못하고 액체인 $CHCl_3$가 약간의 제거능력을 보이는 결과를 얻었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.336.2-336.2
• /
• 2014

Indium Tin Oxide (ITO) thin films are used as the Transparent Conducting Oxide (TCO), such as flat panel display, transparent electrodes, solar cell, touch screen, and various optical devices. ZnO has attracted attention as alternative materials to ITO film due to its resource availability, low cost, and good transmittance at the visible region. Recently, very thin film deposition is important. In order to minimize the damage caused by bending. However, ZnO thin film such as Ga-doped ZnO(GZO) has poor sheet resistance characteristics. To solve this problem, By adding the conductive metal on films can decrease the sheet resistance and increase the mobility of the films. In this study, We analyzed the electrical and optical characteristics of GZO/Ag/GZO (GAG) films by change in Ag and GZO thickness.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2010년도 춘계학술발표대회
• /
• pp.11.2-11.2
• /
• 2010

Photovoltaic devices are promising candidates as affordable and large-area renewable energy sources, which can replace the fossil-fuel-based resources. Especially, thin film solar cells have attracted increasing research attention, since they have a great advantage of low production cost. From the physical point of view, the photovoltaic devices can provide us interesting questions, how to enhance the light absorption and the carrier collection efficiency. A lot of approaches would be possible to address these issues. We have focused on two major topics relevant to photovoltaic device physics; (1) light management using surface plasmons and (2) junction characterizations aiming at proper interface engineering. Regarding the first topic, we have investigated the influences of Ag under-layer morphology on optical properties of ZnO thin films. The experimental results suggested that coupling between the surface plasmon polaritons at the ZnO/Ag interface and excitons in ZnO should play important roles in reflectivity of the ZnO/Ag thin films, which are widely used back reflector structures in thin film solar cells. For the second topic, we have carried out scanning probe microscopy studies of Schottky junctions consisting of photovoltaic materials. Such a research is very helpful to understand the correlation between the defects (e.g., grain boundaries) and local electrical properties. We will introduce some of the recent experimental results and discuss the physical significance.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제15권1호
• /
• pp.35-40
• /
• 2015

In this study, an n-ZnO/p-Si heterojunction diode with embedded Ag nanoparticles was fabricated to investigate the possible improvement of light trapping via the surface plasmon resonance effect for solar cell applications. The Ag nanoparticles were fabricated by the physical sputtering method. The acquired current-voltage curves and optical absorption spectra demonstrated that the application of Ag nanoparticles in the n-ZnO/p-Si interface increased the photo current, particularly in specific wavelength regions. The results indicate that the enhancement of the photo current was caused by the surface plasmon resonance effect generated by the Ag nanoparticles. In addition, minority carrier lifetime measurements showed that the recombination losses caused by the Ag nanoparticles were negligible. These results suggest that the embedding of Ag nanoparticles is a powerful method to improve the performance of n-ZnO/p-Si heterojunction solar cells.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.317-317
• /
• 2010

ZnO나노와이어는 높은 투과도, 화학 및 열적 안정성을 가지며, 유기태양전지에 적용하였을 때 Active Layer의 표면적 증가, 전자의 수집 및 전달에 용이한 장점가지고 있어 하이브리드 유기 태양전지에 적용되고 있다. ZnO나노와이어와 P3HT/PCBM을 사용한 하이브리드 유기태양전지는 Active Layer의 열처리 온도를 변화시켜 ITO/AZO/ZnO wire/PCBM:P3HT/PEDOT:PSS/Ag구조로 제작되었다. ZnO나노와이어는 AZO를 Seed로 사용하고 Znc nitrate hydrate와 hexamethylenetetramine을 혼합하여 수열합성법으로 성장 후, P3HT:PCBM, PEDOT:PSS을 Spin Coating법으로 형성하였다. UV-vis와 Solar simulator를 통하여 Active Layer의 열처리 온도에 따른 태양전지의 특성을 분석하였다.

• 전기화학회지
• /
• 제6권4호
• /
• pp.242-249
• /
• 2003

아연 전극은 고농도의 KOH전해질 용액의 알카리 전지용 양극재료로 폭넓게 이용되고 있다. 그러나 급속한 전기화학적 반응과 높은 용해도에 의한 수지상의 생성에 의해 사이클 수명이 현저하게 짧아지는 것으로 알려져 있다. 본 연구에서는 용액온도 $25^{\circ}C$의 $40wt.\%$ KOH 전해질에 $Ca(OH)_2$, Citrate, Tartrate 및 Gluconate 등의 첨가제를 첨가하고 그리고 $Pb_3O_4\;5wt\%$를 아연 전극에 혼합하였을 때 아연 전극의 전기화학적 거동에 미치는 Pb,04와 첨가제의 효과를 동전위 분극 곡선, 순환전위전해분석법, 가속수명시험 및 SEM사진 분석을 통하여 고찰하였다. $Pb_3O_4$의 첨가는 아연 전극의 부식 속도를 확실히 감소시키는 효과가 있었으며 그리고 $Pb_3O_4$의 첨가에 의한 아연 전극의 부식 전위는 순수아연 전극에 비하여 다소 높았으나 개로 전압에는 거의 영향이 없었다. 그리고 4가지 종류의 첨가제는 내식성과 가속 수명시험시의 사이클 수명을 향상시키는 데 중요한 역할을 하고 있는 것으로 확인되었다. 더욱이 Tartrate 첨가는 4가지 종류의 첨가제 중에서 상대적으로 충방전 특성을 개선할 뿐 아니라 양호한 내식성 효과가 확인되었다.

• 한국전기전자재료학회논문지
• /
• 제24권11호
• /
• pp.876-881
• /
• 2011

The sintering, defect and grain boundary characteristics of Bi-based ZnO chip varistor (1,608 mm size) have been investigated to know the possibility of lowering a manufacturing price by using 100 % Ag inner-electrode. The samples were prepared by general multilayer chip varistor process and characterized by shrinkage, SEM, current-voltage (I-V), admittance spectroscopy (AS), impedance and modulus spectroscopy (IS & MS) measurement. There are no problems to make a chip varistor with 100% Ag inner-electrode in the sintering temperature range of 850~900$^{\circ}C$ for 1 h in air. A good varistor characteristics ($V_n$= 9.3~15.4 V, a= 23~24, $I_L$= 1.0~1.6 ${\mu}A$) were revealed but formed $Zn_i^{{\cdot}{\cdot}}$(0.209 eV) as dominant defect, and increased the distributional inhomogeneity and the temperature instability in grain boundary barriers.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2012년도 춘계학술발표대회
• /
• pp.110.2-110.2
• /
• 2012

We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes.

• The Korean Journal of Ceramics
• /
• 제5권4호
• /
• pp.357-362
• /
• 1999

ZnO varistors containing cobalt, praseodymium and calcium oxides were prepared. The current-voltage charcteristics and microstructures of the specimens were investigated with respect to calcium addition and sintering temperature. The potential barrier heights and the carrier densities were estimated from C-V relations. The compatibility of Ag-Pd as an internal electrode for multilayer chip varistor was also examined.