• 한국결정성장학회지
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• 제6권4호
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• pp.480-492
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• 1996

Al이 2 wt% 포함되어 있는 Zn 금속 target을 사용하여 반응성 직류 magnetron sputtering법으로 AZO(Aluminum doped Zinc Oxide) 투명전도막을 제막하였다. 반응성 가스인 산소의 분압과 유량을 조절하여 투과율과 전도도가 모두 우수한 전이영역을 발견하였고 전이영역을 안정적으로 유지하기 위한 증착조건을 찾아냈다. ZnO:Al막의 XRD분석결과 산화막이나 전이영역에서 증착된 막들은 ZnO결정의 (002)면의 peak가 유일하게 관찰되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.926-929
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• 2007

A significant progress has been made in the characterization of zinc oxide (ZnO) semiconductor as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor due to its high electron mobility at low deposition temperature which is quite suitable for flexible display and OLED devices. The wet pattering of ZnO is another important issue with regard to mass production of ZnO thin film transistor device. However, the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported yet, in this work, wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. The effects of deposition parameters such as RF power and oxygen partial pressure on corrosion rate are also examined.

• 청정기술
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• 제19권3호
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• pp.300-305
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• 2013

ZnO(산화아연)와 rGO(환원 흑연산화물, reduced graphite oxide)로 구성된 복합체를 제조하여 중저온 영역($300-500^{\circ}C$)에서 $H_2S$(황화수소) 흡착실험을 수행하였다. rGO에 붙어있는 수산화기, 에폭시기, 그리고 카르복실기와 같은 산소를 포함하는 관능기들이 $H_2S$흡착에 미치는 영향을 조사하기 위해서 다양한 특성분석(TGA, XRD, FT-IR, SEM, 그리고 XPS)을 실시하였다. GO(흑연산화물, graphite oxide)를 rGO로 환원시키기 위해서 마이크로파 조사법을 사용하였다. 마이크로파 조사법에 의한 환원공정에서는 온화한 환원분위기를 조성하여 rGO 표면에 상당량의 산소 관능기들이 남아있는 것을 확인하였다. 이러한 관능기들은 나노 크기의 ZnO가 2D rGO 표면에 균일하게 부착되도록 유도하여 고온 영역에서도 ZnO의 응집 및 소결이 일어나는 것을 방지하는 효과가 있다. 이로 인해 ZnO/rGO 복합체는 순수한 ZnO와 비교하여 3.5배 정도의 흡착량을 보여주었다.

• 한국전기전자재료학회논문지
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• 제28권3호
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• pp.185-190
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• 2015

In this study, we fabricated the indium gallium zinc oxide (IGZO), zinc oxide (ZnO), aluminum zinc oxide (AZO). oxide and silver are deposited by magnetron sputtering and thermal evaporator, respectively transparency and energy bandgap were changed by the thickness of silver layer. To fabricate metal oxide metal (OMO) structure, IGZO sputtered on a corning 1,737 glass substrate was used as bottom oxide material and then silver was evaporated on the IGZO layer, finally IGZO was sputtered on the silver layer we get the final OMO structure. The radio-frequency power of the target was fixed at 30 W. The chamber pressure was set to $6.0{\times}10^{-3}$ Torr, and the gas ratio of Ar was fixed at 25 sccm. The silver thickness are varied from 3 to 15 nm. The OMO thin films was analyzed using XRD. XRD shows broad peak which clearly indicates amorphous phase. ZnO, AZO, OMO show the peak [002] direction at $34^{\circ}$. This indicate that ZnO, AZO OMO structure show the crystalline peak. Average transmittance of visible region was over 75%, while that of infrared region was under 20%. Energy band gap of OMO layer was increased with increasing thickness of Ag layer. As a result total transmittance was decreased.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.280.2-280.2
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• 2016

The graphene, a single atomic sheet of graphite, has attracted tremendous interest owing to its novel properties including high intrinsic mobility, optical transparency and flexibility. However, for more diverse application of graphene devices, it is essential to tune its transport behavior by shifting Dirac Point (DP) of graphene. So, in the following context, we suggest a method to tune structural and electronic properties of graphene using atomic layer deposition. By atomic layer deposition of zinc oxide (ZnO) on graphene using 4-mercaptophenol as linker, we can fabricate n-doped graphene. Through ${\pi}-{\pi}$ stacking between chemically inert graphene and 4-mercaptophenol, conformal deposition of ZnO on graphene was enabled. The electron mobility of graphene TFT increased more than 3 times without considerably decreasing the hole mobility, compared to the pristine graphene. Also, it has high air stability. This ZnO doping method by atomic layer deposition can be applicable to large scale array of CVD graphene TFT.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1459-1461
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• 1998

This paper provides the results of analysis of lightening arrester failed in the field. XRD was used for qualitative analysis and SEM for microstructure analysis of zinc oxide (ZnO) block. The failure of lightening arrester might occur due to the following reasons: the uneven size of zinc oxide grains and cement layers. the re-crystallization of zinc oxide grains resulting from electrical stress around impurities, and the presence of too large pores($\simeq$ 50 ${\mu}m$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.901-904
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• 2000

In order to investigate the effect of deposition conditions on crystallographic properties of ZnO thin films by Facing Targets Sputtering system which can deposit thin films in plasma-free situation and change the deposition conditions in wide range. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step (Tencor) analyses. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature 300$^{\circ}C$, inter target distance 100mm. In these conditions, the rocking curve of zinc oxide thin films deposited on Glass was 3.9$^{\circ}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.256-256
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• 2012

Oxide semiconductors such as zinc tin oxide (ZTO) or indium gallium zinc oxide (IGZO) have attracted a lot of research interest owing to their high potential for application as thin film transistors (TFTs) [1,2]. However, the instability of oxide TFTs remains as an obstacle to overcome for practical applications to electronic devices. Several studies have reported that the electrical characteristics of ZnO-based transistors are very sensitive to oxygen, hydrogen, and water [3,4,5]. To improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistor, back channel passivation layer is essential for the long term bias stability. In this study, we investigated the instability of amorphous indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) by the back channel contaminations. The effect of back channel contaminations (humidity or oxygen) on oxide transistor is of importance because it might affect the transistor performance. To remove this environmental condition, we performed vacuum seasoning before the deposition of hybrid passivation layer and acquired improved stability. It was found that vacuum seasoning can remove the back channel contamination if a-IGZO film. Therefore, to achieve highly stable oxide TFTs we suggest that adsorbed chemical gas molecules have to be eliminated from the back-channel prior to forming the passivation layers.

• 공업화학
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• 제24권4호
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• pp.391-395
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• 2013

본 연구에서는 자외선 흡수 물질로 잘 알려진 zinc oxide (ZnO) 나노분말을 세 가지 합성조건에서 수열합성법으로 합성하였다. 또한, 분산성을 향상시키기 위하여 합성된 ZnO 나노분말의 표면을 다양한 실란계 계면활성제를 사용하여 표면 개질하였고, 표면개질된 ZnO 나노분말을 분산제로 72 h 동안 볼밀링하여 분산 졸 시료를 제조하였다. 30 nm 크기로 합성된 ZnO 나노분말을 3-chloropropyl trimethoxy silane로 표면개질하여 폴리우레탄계 분산제로 제조한 분산 졸 시료가 가장 높은 자외선 차단 특성 및 가시광 투과율을 가지면서 분산 안정성이 가장 우수하였다.

• 한국재료학회지
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• 제18권10호
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• pp.529-534
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• 2008

The hydrogen gas sensing properties of a zinc oxide nanowire structure were studied. Porous zinc oxide nanowire structures were fabricated by oxidizing zinc deposited on a single-wall carbon nanotube (SWNT) template. This revealed a porous ZnO-SWNT composite due to the porosity in the SWNT film. The gas sensing properties were compared with those of zinc oxide thin films deposited on SiO2/Si substrates in sensitivity and operating temperature. The composite structure showed higher sensitivity and lower operating temperature than the zinc oxide film. It showed a response even at room temperature while the film structure did not.